Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125

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1 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The (N) Family of Silicon Controlled Rectifiers uses a high performance glass passivated technology. This general purpose Family of Silicon Controlled Rectifiers is designed for power supplies up to 400Hz on resistive or inductive load. BSOLUTE RTINGS (limiting values) K G TOP 3 (Plastic) Symbol Parameter Value Unit IT(RMS) RMS on-state current (180 conduction angle) N Tc=80 C Tc=85 C IT(V) verage on-state current (180 conduction angle,single phase circuit) N Tc=80 C Tc=85 C ITSM Non repetitive surge peak on-state current ( Tj initial = 25 C ) tp=8.3 ms 420 tp=10 ms 400 I2t I2t value tp=10 ms 800 2s di/dt Critical rate of rise of on-state current Gate supply : IG = 100 m dig/dt = 1 /µs 100 /µs Tstg Tj Storage and operating junction temperature range - 40 to to C C Tl Maximum lead temperature for soldering during 10 s at 4.5 mm from case 230 C Symbol Parameter / N Unit VDRM VRRM Repetitive peak off-state voltage Tj = 125 C V March /5

2 (N) THERML RESISTNCES Symbol Parameter Value Unit Rth (j-a) Junction to ambient 50 C/W Rth (j-c) DC Junction to case for DC 1.1 C/W N 0.8 GTE CHRCTERISTICS (maximum values) PG (V) =1W PGM = 40W (tp = 20 µs) IFGM = 8 (tp = 20 µs) VRGM = 5 V. ELECTRICL CHRCTERISTICS Symbol Test Conditions Value Unit N I GT V D =12V (DC) R L =33Ω Tj=25 C MX 50 m V GT V D =12V (DC) R L =33Ω Tj=25 C MX 1.5 V V GD V D =V DRM R L =3.3kΩ Tj= 125 C MIN 0.2 V tgt V D =V DRM I G = 200m dig/dt = 1.5/µs Tj=25 C TYP 2 µs IL IG= 1.2 IGT Tj=25 C TYP 40 m IH IT= 500m gate open Tj=25 C MX 75 m VTM ITM= 60 N ITM= 70 tp= 380µs Tj=25 C MX V I DRM IRRM V DRM VRRM Rated Rated Tj=25 C MX 0.02 m Tj= 125 C 6 dv/dt Linear slope up to VD=67%VDRM gate open V DRM 800V VDRM 1000V Tj= 125 C MIN V/µs tq VD=67%VDRM ITM= 60 VR= 75V ditm/dt=30 /µs dvd/dt= 20V/µs Tj= 125 C TYP 100 µs 2/5

3 (N) Package IT(RMS) VDRM /VRRM Sensitivity Specification V BTW X (Insulated) 400 X 600 X 800 X 1000 X 1200 X N X (Uninsulated) 800 X 1000 X 1200 X Fig.1 : Maximum average power dissipation versus average on-state current (). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperatures (Tamb and Tcase) for different thermal resistances heatsink + contact (). Fig.3 : Maximum average power dissipation versus average on-state current ( N). Fig.4 : Correlation between maximum average power dissipation and maximum allowable temperatures (T amb and Tcase) for different thermal resistances heatsink + contact ( N). 3/5

4 (N) Fig.5 : verage on-state current versus case temperature (). Fig.6 : verage on-state current versus case temperature ( N). Fig.7 : Relative variation of thermal impedance versus pulse duration. Fig.8 : Relative variation of gate trigger current versus junction temperature. Zth/Rth 1.00 Zth(j-c) 0.10 Zth(j-a) 0.01 tp(s) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 Fig.9 : Non repetitive surge peak on-state current versus number of cycles. Fig.10 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t 10 ms, and corresponding value of I2t. 4/5

5 Fig11 : On-state characteristics (maximum values). (N) PCKGE MECHNICL DT TOP 3 Plastic R4.6 G P N N I D B J L M H C REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max B C D G H I J L M N P Cooling method : C Marking : type number Weight : 4.7 g Recommended torque value : 0.8 m.n. Maximum torque value : 1 m.n. Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics SGS-THOMSON Microelectronics - Printed in Italy - ll rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPNIES ustralia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.. 5/5

Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125

Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125 BTW 68 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY BTW 68 Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon