Obsolete Product(s) - Obsolete Product(s)
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1 VB92ZVFI / VB92ZVSP HIGH VOLTGE IGNITION COIL DRIVER POWER I.C. TYPE V cl I cl V cg(sat) VB92ZVFI VB92ZVSP 340V V n NO EXTERNL COMPONENT REQUIRED n INTEGRTED HIGH VOLTGE CLMP n COIL CURRENT LIMIT INTERNLLY SET n HIGH RUGGEDNESS DESCRIPTION The VB92ZVFI, VB92ZVSP is a monolithic high voltage integrated circuit made using the STMicroelectronics VIPower M-2 technology, which combines a vertical current flow power trilinton with a coil current limiting circuit and a collector voltage clamping. The device is particularly suitable for application in high performance electronic car ignition, where coil current limitation and voltage clamping are required. BLOCK DIGRM CONTROL UNIT 2 3 ISOWTT220 0 PowerSO-0 ORDER CODES: ISOWTT220 VB92ZVFI POWERSO-0 VB92ZVSP R SENSE HV c ND802 October 2000 /7
2 VB92ZVFI / VB92ZVSP BSOLUTE MXIMUM RTING Symbol Parameter Value ISOWTT220 PowerSO-0 Unit HV c Collector Voltage Internally limited V I C Collector Current Internally limited Maximum Input Voltage 8 V I IN Input current 0 m P tot Total dissipation at T C =25 C W T j Junction operating temperature - 40 to 50 C T stg Storage temperature - 40 to 50 C THERML DT Symbol Parameter Value ISOWTT220 PowerSO-0 Unit R thj-case Thermal resistance junction-case (MX) C/W R thj-amb Thermal resistance junction-ambient (MX) C/W CONNECTION DIGRM (TOP VIEW) HV C ELECTRICL CHRCTERISTICS (V CC =2V; T case =25ºC unless otherwise specified) 3 2 HV C Symbol Parameter Test Conditions Min Typ Max Unit Input Voltage V I IN Input Current =4.2V; I C =5 (See test circuit) 5 m =5V; I C =5 0 m I cgo Collector Cut-off Current =0V; HV C =250V 250 µ V cl (*) High voltage clamp -40 C<T j <25 C V I cl (*) Coil Current Limit =4.2V; -40 C<T j <25 C =5V; -40 C<T j <25 C (See note ) V cg(sat) Power Stage Saturation Voltage I C =5; I IN =0m 2.5 V V f (**) Diode Forward Voltage I f =0 3.5 V I cl Coil current variation in respect to =5V = V 200 m (*) Coil data: primary resistance R C = Ω, primary inductance L C =6 8mH (**) Pulsed: pulse duration= 300µs, duty cycle=.5% NOTE : I cl is also controlled in respect to the variation of between 4.5 and 5.5V 2/7
3 VB92ZVFI / VB92ZVSP FIGURE : Delay-off time Vs Temperature FIGURE 2: Input current Vs Temperature FIGURE 3: Saturation Voltage VS Collector Current FIGURE 5: Coil Current Limit Vs Temperature FIGURE 4: Diode Forward Voltage VS Temperature FIGURE 6: Clamping Voltage VS Temperature 3/7
4 VB92ZVFI / VB92ZVSP FIGURE 7: Maximum Energy and Output Current Unclamped 4/7
5 VB92ZVFI / VB92ZVSP PowerSO-0 MECHNICL DT DIM. mm. inch MIN. TYP MX. MIN. TYP. MX B c D D E E E E E e F H h Q α 0º 8º H E 0 D h = D= F e 0.25 M B 6 5 E2 0.0 B SETING PLNE DETIL "" C Q SETING PLNE B E3 E E4 DETIL "" L α 5/7
6 VB92ZVFI / VB92ZVSP ISOWTT220 MECHNICL DT DIM. mm. inch MIN. TYP MX. MIN. TYP. MX B D E F F F G G H L L L L L B H L6 L7 L3 D F F G E G L2 F2 L /7
7 VB92ZVFI / VB92ZVSP Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 2000 STMicroelectronics - Printed in ITLY- ll Rights Reserved. STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.. 7/7
L9307 L9309 DUAL HIGH CURRENT LOW SIDE DRIVER
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VNP35N07FI VNB35N07/VNV35N07
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BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS. Figure 1: Package
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N - CHANNEL 600V Ω A TO-220/TO-220FP PowerMESH ΙΙ MOSFET 4.2 A 4.2 A. Symbol Parameter Value Unit
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STP60NE06L-16 STP60NE06L-16FP
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STP75NE75 STP75NE75FP
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PRELIMINARY DATA TYPE V DSS R DS(on) I D STW8NB V < 1.5 Ω 8 A
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TDA7231A 1.6W AUDIO AMPLIFIER OPERATING VOLTAGE 1.8 TO 15 V LOW QUIESCENT CURRENT HIGH POWER CAPABILITY LOW CROSSOVER DISTORTION SOFT CLIPPING
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STP30NE06L STP30NE06LFP
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293D 293DD PUS-PU FOUR CANNE DRIVER WIT DIODES 600mA OUTPUT CURRENT CAPABIITY PER CANNE 1.2A PEAK OUTPUT CURRENT (non repetitive) PER CANNE ENABE FACIITY OVERTEMPERATURE PROTECTION OGICA "0" INPUT VOTAGE
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STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
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STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
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IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET
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BZW06-5V8/376 BZW06-5V8B/376B
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STH15NA50/FI STW15NA50
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LOW-NOISE VERTICAL DEFLECTION SYSTEM FEATURES SUMMARY COMPLETE VERTICAL DEFLECTION SYSTEM LOW NOISE SUITABLE FOR HIGH DEFINITION MONITORS ESD PROTECTED DESCRIPTION The TDA75P is a monolithic integrated
STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
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. HIGH PERFORMANCE CLAMPING AT
L9700 HEX PRECISION LIMITER. HIGH PERFORMANCE CLAMPING AT GROUND AND POSITIVE REFERENCE VOLTAGE FAST ACTIVE CLAMPING OPERATING RANGE 4.75-5.25 V SINGLE VOLTAGE FOR SUPPLY AND POSITI-. VE REFERENCE LOW
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TSM100 SINGLE OPERATIONAL AMPLIFIER AND SINGLE COMPARATOR
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Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
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Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
BTW 68 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY BTW 68 Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon
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Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. L6506 L6506D CURRENT CONTROLLER FOR STEPPING MOTORS DESCRIPTION The L6506/D
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STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT TYPE V CES V CE(sat) I C STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V
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L9686D AUTOMOTIVE DIRECTION INDICATOR
L9686 AUTOMOTIVE DIRECTION INDICATOR RELAY DRIVER IN CAR DIRECTION INDICATORS FLASH FREQUENCY DOUBLES TO INDI- CATE LAMP FAILURE DUMP PROTECTION ( ± 80 V) REVERSE BATTERY PROTECTION DESCRIPTION The L9686
STW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET
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MC1488 RS-232C QUAD LINE DRIVER
RS-232C QUAD LINE DRIVER CURRENT LIMITED OUTPUT ±10mA TYP. POWER-OFF SOURCE IMPEDANCE 300Ω MIN. SIMPLE SLEW RATE CONTROL WITH EXTERNAL CAPACITOR FLEXIBLE OPERATING SUPPLY RANGE INPUTS ARE TTL AND µp COMPATIBLE
Obsolete Product(s) - Obsolete Product(s)
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
STW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW6NC90Z 900 V < 2.5 Ω 5.2A TYPICAL R DS (on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM150/LM250 LM350 THREE-TERMINAL 3 A ADJUSTABLE VOLTAGE REGULATORS GUARANTEED
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STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS(on) I D STP80NE03L-06 30 V < 0.006 Ω 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE
TDA7241B 20W BRIDGE AMPLIFIER FOR CAR RADIO
TDA7241B 20W BRIDGE AMPLIFIER FOR CAR RADIO VERY LOW STAND-BY CURRENT GAIN = 32dB OUTPUT PROTECTED AGAINST SHORT CIRCUITS TO GROUND AND ACROSS LOAD COMPACT HEPTAWATT PACKAGE DUMP TRANSIENT THERMAL SHUTDOWN
STP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP36NF06 STP36NF06FP 60 V 60 V TYPICAL R DS (on) = 0.032 Ω
STP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET
STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STB80NF10 STP80NF10 100 V 100 V
L4940 SERIES VERY LOW DROP 1.5A REGULATORS
L4940 SERIES VERY LOW DROP 1.5A REGULATORS PRECISE 5, 8.5, 10, 12V OUTPUTS LOW DROPOUT VOLTAGE (500mV Typ. at 1.5A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY
STS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET
P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE V DSS R DS(on) I D STS5PF30L 30V
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
STW8NC90Z N-CHANNEL 900V Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW8NC90Z 900 V < 1.38 Ω 7.6 A TYPICAL R DS (on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE
STD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET
TYPE V DSS R DS(on) I D STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA STD7NS20 STD7NS20-1 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL R DS (on) = 0.35
L4941 VERY LOW DROP 1A REGULATOR
VERY LOW DROP 1A REGULATOR LOW DROPOUT VOLTAGE (450mV Typ. at 1A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY PROTECTION DESCRIPTION The L4941 is a three terminal
TS834 MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW OR HIGH INTEGRATED TIMER
MICROPOWER VOLTAGE SUPERVISOR RESET ACTIVE LOW OR HIGH INTEGRATED TIMER ULTRA LOW POWER CONSUMPTION : 12µA max. @ V CC = 5V BOTH ACTIVE HIGH AND ACTIVE LOW OUTPUTS RESET TIMER WITH DISABLE FUNCTION PRECISION
STY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET
N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STY60NM50 500V < 0.05Ω 60 A TYPICAL R DS (on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
L4940 series VERY LOW DROP 1.5 A REGULATORS
L4940 series VERY LOW DROP 1.5 A REGULATORS PRECISE 5 V, 8.5 V, 10 V, 12 V OUTPUTS LOW DROPOUT VOLTAGE (500 typ at 1.5A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY
STTH2003CT/CG/CF/CR/CFP
STTH23CT/CG/CF/CR/CFP HIGH FREQUENCY SECONDRY RECTIFIER MJOR PRODUCT CHRCTERISTICS I F(V) V RRM 2x 3 V Tj (max) 175 C V F (max) 1 V trr (max) 35 ns D 2 P STTH23CG FETURES ND BENEFITS COMBINES HIGHEST RECOVERY
STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STS7PF30L 30V
L4620 LIQUID LEVEL ALARM. DRIVES DIRECTLY 300 ma ALARM LOAD PROGRAMMABLE INPUT POLARITY TO ACTIVATE THE OUTPUT STAGE PROGRAMMABLE DELAY TIME
L4620 LIQUID LEVEL ALARM DRIVES DIRECTLY 300 ma ALARM LOAD PROGRAMMABLE INPUT POLARITY TO ACTIVATE THE OUTPUT STAGE PROGRAMMABLE DELAY TIME. PROGRAMMABLE OUTPUT DUTY CYCLE OUTPUT SHORT CIRCUIT PROTECTION
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STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STP60NE06-16 60 V < 0.016
ESDA6V1U1 TRANSIL ARRAY FOR ESD PROTECTION. Application Specific Discretes A.S.D.
Application Specific Discretes A.S.D. ESDA6V1U1 TRANSIL ARRAY FOR ESD PROTECTION APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : COMPUTERS PRINTERS
Obsolete Product(s) - Obsolete Product(s)
PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145
STD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET
Table 1: General Features N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK STripFET II POWER MOSFET Figure 1:Package TYPE V DSS R DS(on) I D -1 60 V 60 V TYPICAL R DS (on) = 0.032 Ω < 0.040 Ω < 0.040 Ω EXCEPTIONAL
L6221. Quad Darlington switch. Features. Applications. Description
L6221 Quad Darlington switch Features Four non-inverting inputs with enable Output voltage up to 50 V Output current up to 1.8 A Very low saturation voltage TTL compatible inputs Integral fast recirculation
LDRxxyy VERY LOW DROP DUAL VOLTAGE REGULATOR
VERY LOW DROP DUAL VOLTAGE REGULATOR OUTPUT CURRENT 1 UP TO 500mA OUTPUT CURRENT 2 UP TO 1.0A LOW DROPOUT VOLTAGE 1 (0.3V @ I O =500mA) LOW DROPOUT VOLTAGE 2 (0.4V @ I O =1A) VERY LOW SUPPLY CURRENT (TYP.50µA
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I ² PAK/D²PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP 60 V
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack
STX112 STX117 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application
t p = 10 ms T j initial = T amb
P6KE TRANSIL FEATURES Peak pulse power: 600 W (/0 µs ) Stand-off voltage range 6.8 to 440V Unidirectional and Bidirectional types Low clamping factor Fast response time UL recognized DESCRIPTION Transil
BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR
TDA1151 MOTOR SPEED REGULATOR
MOTOR SPEED REGULATOR EXCELLENT VERSATILITY IN USE HIGH OUTPUT CURRENT (UP TO 800mA) LOW QUIESCENT CURRENT (1.7mA) LOW REFERENCE VOLTAGE (1.2V) EXCELLENT PARAMETERS STABILITY VERSUS TEMPERATURE DESCRIPTION