SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS
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1 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for broadband applications in the MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR at rated operating conditions. Figure 1. Package.0 6L FL (M111) epoxy sealed Figure 2. Pin Connection 1. Collector 3. Emitter 2. Base 4. Emitter Table 1. Order Codes Order Codes Marking Package Packaging SD1488 SD1488 M111 PLASTIC TRAYS June 2004 REV. 2 1/7
2 Table 2. Absolute Maximum Ratings (T case = 25 C) Symbol Parameter Value Unit V CBO Collector-Base Voltage 36 V V CEO Collector-Emitter Voltage 16 V V EBO Emitter-Base Voltage 4.0 V I C Device Current 8.0 A P DISS Power Dissipation 117 W T J Junction Temperature +200 C T STG Storage Temperature 65 to +1 C Table 3. Thermal Data Symbol Parameter Value Unit R TH(j-c) Junction-Case Thermal Resistance 1.5 C/W ELECTRICAL SPECIFICATIONS (T case = 25 C) Table 4. Static Symbol Table 5. Dynamic Test Conditions Value Min. Typ. Max. BV CES I C = 15 ma; V BE = 0 V 36 V BV CEO I C = ma; I B = 0 ma 16 V BV EBO I E = 5 ma; I C = 0 ma 4.0 V I CES V CE = 12.5 V; I E = 0 ma 5 ma h FE V CE = 5 V; I C = 1 A Symbol Test Conditions Value Min. Typ. Max. P OUT f = 470 MHz; P IN = 10.0 W; V CC = 12.5 V 38 W G P f = 470 MHz; P IN = 10.0 W; V CC = 12.5 V 5.8 db η C f = 470 MHz; P OUT = 38 W; V CC = 12.5 V % C OB f = 1 MHz; V CB = 12.5 V 95 pf Unit Unit 2/7
3 TYPICAL PERFORMANCE Figure 3. Power Output vs Power Input Figure 4. Power Output & Collector Efficiency vs Frequency Power Out 70 Power Out (Watts) Freq = 470 MHz Broadband Circuit Power In (Watts) Figure 5. Power Output vs Frequency Power Out (Watts) Pin=12W Pin=10W Pin=8W Pin=6W Broadband Circuit Collector Efficiency Figure 6. Power Reflected vs Frequency 10 Power Out (Watts) Power Reflected (Watts) Broadband Circuit Efficiency (%) 3/7
4 Figure 7. Output Capacitance vs Collector Base Voltage Output Capacitance (pf) Freq = 1 MHz Collector Base Voltage (Vcb) IMPEDANCE DATA Figure 8. Typical Input Impedance Impedance (Ohms) R j Figure 9. Typical Collector Load Impedance Impedance (Ohms) R j 4/7
5 PACKAGE MECHANICAL Table 6. M111 Mechanical Data Symbol millimeters inches Min Typ Max Min Typ Max A B C D E F G H I J K L M Figure 10. M111 Package Dimensions Note: Drawing is not to scale. 5/7
6 REVISION HISTORY Table 7. Revision History Date Revision Description of Changes July First Issue 10-June Stylesheet update. No content change. 6/7
7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2004 STMicroelectronics - All rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States 7/7
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ESM3030D NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE ERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY
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High voltage fast-switching NPN Power transistor General features State-of-the-art technology: Diffused collector Enhanced generation EHVS1 More stable performances versus operating temperature variation
SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description
SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver