2N2219A 2N2222A HIGH SPEED SWITCHES

Size: px
Start display at page:

Download "2N2219A 2N2222A HIGH SPEED SWITCHES"

Transcription

1 2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed for high speed switching application at collector current up to 500mA, and feature useful current gain over a wide range of collector current, low leakage currents and low saturation voltage. TO-18 TO-39 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collector-Base Voltage (IE = 0) 75 V VCEO Collector-Emitter Voltage (IB = 0) 40 V V EBO Emitter-Base Voltage (I C = 0) 6 V I C Collector Current 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb 25 o C for 2N2219A for 2N2222A at TC 25 o C for 2N2219A for 2N2222A T stg Storage Temperature -65 to 175 T j Max. Operating Junction Temperature W W W W o C o C February /7

2 THERMAL DATA TO-39 TO-18 R thj-case Rthj-amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max o C/W o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CBO I CEX IBEX I EBO V (BR)CBO V (BR)CEO V (BR)EBO V CE(sat) VBE(sat) Collector Cut-off Current (I E = 0) Collector Cut-off Current (V BE = -3V) Base Cut-off Current (V BE = -3V) Emitter Cut-off Current (IC = 0) Collector-Base Breakdown Voltage (I E = 0) Collector-Emitter Breakdown Voltage (I B = 0) Emitter-Base Breakdown Voltage (IC = 0) Collector-Emitter Saturation Voltage V CB = 60 V V CB = 60 V T j = 150 o C V CE = 60 V 10 na VCE = 60 V 20 na V EB = 3 V 10 na I C = 10 µa 75 V I C = 10 ma 40 V I E = 10 µa 6 V I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma Base-Emitter IC = 150 ma IB = 15 ma Saturation Voltage I C = 500 ma I B = 50 ma h FE DC Current Gain I C = 0.1 ma V CE = 10 V I C = 1 ma V CE = 10 V I C = 150 ma V CE = 10 V IC = 500 ma VCE = 10 V I C = 150 ma V CE = 1 V T amb = -55 o C h fe Small Signal Current Gain I C = 1 ma V CE = 10 V f = 1KHz f = 1KHz f T Transition Frequency I C = 20 ma V CE = 20 V 300 MHz f = 100 MHz C EBO Emitter-Base I C = 0 V EB = 0.5 V f = 100KHz 25 pf Capacitance C CBO Collector-Base Capacitance I E = 0 V CB = 10 V f = 100 KHz 8 pf R e(hie) Real Part of Input I C = 20 ma V CE = 20 V 60 Ω Impedance f = 300MHz * Pulsed: Pulse duration = 300 µs, duty cycle 1 % na µa V V V V 2/7

3 ELECTRICAL CHARACTERISTICS (continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit NF Noise Figure I C = 0.1 ma V CE = 10 V 4 db f = 1KHz R g = 1KΩ hie Input Impedance IC = 1 ma VCE = 10 V h re Reverse Voltage Ratio I C = 1 ma V CE = 10 V h oe Output Admittance I C = 1 ma V CE = 10 V t d Delay Time V CC = 30 V I C = 150 ma I B1 = 15 ma V BB = -0.5 V tr Rise Time VCC = 30 V IC = 150 ma I B1 = 15 ma V BB = -0.5 V ts Storage Time VCC = 30 V IC = 150 ma I B1 = -I B2 = 15 ma tf Fall Time VCC = 30 V IC = 150 ma I B1 = -I B2 = 15 ma r bb C b c Feedback Time I C = 20 ma V CE = 20 V Constant f = 31.8MHz Pulsed: Pulse duration = 300 µs, duty cycle 1 % See test circuit kω kω µs µs 10 ns 25 ns 225 ns 60 ns 150 ps 3/7

4 Test Circuit fot t d, t r. PULSE GENERATOR : tr 20 ns PW 200 ns Z IN = 50 Ω TO OSCILLOSCOPE tr 5.0 ns ZIN < 100 KΩ C IN 12 pf Test Circuit fot t d, t r. PULSE GENERATOR : TO OSCILLOSCOPE : PW 10 µs t r < 5.0 ns ZIN = 50 Ω ZIN > 100 KΩ TC 5.0 ns CIN 12 pf 4/7

5 TO-18 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o 45 o G D A H I F E L C B /7

6 TO-39 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B D E F G H I L 45 o (typ.) G D A H I F E L B P008B 6/7

7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 7/7

8 This datasheet has been download from: Datasheets for electronics components.

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22

More information

MMBT2222A SMALL SIGNAL NPN TRANSISTOR

MMBT2222A SMALL SIGNAL NPN TRANSISTOR SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY

More information

2N2219A 2N2222A HIGH SPEED SWITCHES

2N2219A 2N2222A HIGH SPEED SWITCHES 2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed

More information

STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR ST93003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY

More information

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS

MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code Marking Package Shipment MJD122T4 MJD122-1 MJD127T4 MJD127-1 MJD122 MJD122 MJD127 MJD127 TO-252 (DPAK) TO-251

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description

2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power

More information

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BUL138FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE

More information

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description

2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description

More information

BU941Z/BU941ZP BU941ZPFI

BU941Z/BU941ZP BU941ZPFI BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES

More information

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description

2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description 2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications

More information

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications

STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) ST8812FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED TIGHT hfe CONTROL LARGE R.B.S.O.A. FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING

More information

BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)).

BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS

More information

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High

More information

2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description

2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics

More information

Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8

Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8 2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface

More information

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description

2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.

STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram. STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C I C @100 C STGP10NB60SD 600V < 1.7V 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE

More information

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description

2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package

More information

Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9

Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9 Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC

More information

2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.

2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications. High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC

More information

SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS

SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial

More information

2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3

2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3 High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier

More information

STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed

STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is

More information

BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED

BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS

More information

SD1275 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS. FEATURES SUMMARY 160 MHz 13.6 VOLTS COMMON EMITTER P OUT = 40 W MIN.

SD1275 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS. FEATURES SUMMARY 160 MHz 13.6 VOLTS COMMON EMITTER P OUT = 40 W MIN. RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY 1 MHz 13.6 VOLTS COMMON EMITTER P OUT = W MIN. WITH 9 db GAIN Figure 1. Package DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial

More information

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel

2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface

More information

BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS. Figure 1: Package

BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS. Figure 1: Package BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE

More information

BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable

More information

Features. Description. Table 1. Device summary. Quality Level. Engineering Model

Features. Description. Table 1. Device summary. Quality Level. Engineering Model Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 LCC-3UB Figure 1. Internal schematic diagram Parameter Value BV CEO 60 V I C (max) 50 ma h

More information

MMBTA42. Small signal NPN transistor. Features. Applications. Description

MMBTA42. Small signal NPN transistor. Features. Applications. Description Small signal NPN transistor Datasheet - production data Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 SOT-23 Figure

More information

ST2111FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Features. Applications. Internal Schematic Diagram. Description.

ST2111FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Features. Applications. Internal Schematic Diagram. Description. HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY (1500V) HIGH SWITCHING SPEED

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) 2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power

More information

Order codes Packages Lead finish Marking Type EPPL Packaging. 2N5153SHR SMD.5 Gold ESCC Flight Yes Strip pack

Order codes Packages Lead finish Marking Type EPPL Packaging. 2N5153SHR SMD.5 Gold ESCC Flight Yes Strip pack Hi-Rel PNP bipolar transistor 80 V - 5 A Features BV CEO I C (max) Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific

More information

2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description

2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description 2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in

More information

MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device

MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description This device is an NPN low voltage transistor

More information

ESM3030DV NPN DARLINGTON POWER MODULE

ESM3030DV NPN DARLINGTON POWER MODULE ESM3030D NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE ERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base

More information

STR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma

STR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma High voltage fast-switching PNP power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape and

More information

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT

STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT TYPE V CES V CE(sat) I C STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V

More information

Symbol Parameter Value Unit. Maximum lead temperature for soldering during 10s at 5mm from case

Symbol Parameter Value Unit. Maximum lead temperature for soldering during 10s at 5mm from case BZW50-10,B/180,B TRANSIL TM FEATURES PEAK PULSE POWER : 5000 W (10/1000µs) STAND-OFF VOLTAGE RANGE : From 10V to 180V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL RECOGNIZED DESCRIPTION

More information

2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description

2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23

More information

BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description

BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications

More information

SD1731 (TH562) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS. Figure 1. Package

SD1731 (TH562) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS. Figure 1. Package RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 13 db GAIN Figure 1. Package

More information

BUX87. High voltage NPN power transistor. Features. Applications. Description

BUX87. High voltage NPN power transistor. Features. Applications. Description High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation ery high switching speed Applications Electronic ballast for fluorescent

More information

STD840DN40. Dual NPN high voltage transistors in a single package. Features. Applications. Description

STD840DN40. Dual NPN high voltage transistors in a single package. Features. Applications. Description Dual NPN high voltage transistors in a single package Datasheet production data Features Low V CE(sat) Simplified circuit design Reduced component count Fast switching speed Applications Compact fluorescent

More information

Order codes ESCC Part num. Quality Level Rad. level Package Lead Finish Mass EPPL

Order codes ESCC Part num. Quality Level Rad. level Package Lead Finish Mass EPPL Hi-Rel 40 V - 0.8 A NPN bipolar transistor Features Parameter Value BV CEO 40 V I C (max) 0.8 A h FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Linear gain characteristics Hermetic

More information

3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description

3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package

More information

2STD1360 2STF1360-2STN1360

2STD1360 2STF1360-2STN1360 2STD1360 2STF1360-2STN1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed 4 1 2 3 4 1 3 2

More information

IRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET

IRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D IRF540 100 V

More information

Features 3. Order codes ESCC part num. Qual. level Rad level Packages Lead finish Mass (g) EPPL

Features 3. Order codes ESCC part num. Qual. level Rad level Packages Lead finish Mass (g) EPPL Hi-Rel 80 V - 1 A NPN bipolar transistor Features 3 BV CEO 80 V I C (max) 1 A H FE at 10 V - 150 ma > 100 Operating temperature range -65 C to +200 C 1 2 2 3 TO-18 LCC-3 3 1 Hi-Rel NPN bipolar transistor

More information

STR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma

STR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma STR1550 High voltage fast-switching NPN power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape

More information

MJD122 MJD127 Complementary power Darlington transistors Features Applications Description

MJD122 MJD127 Complementary power Darlington transistors Features Applications Description MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications General purpose linear and switching

More information

STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed

STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching

More information

BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description

BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching

More information

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET

STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V

More information

ST26025A. PNP power Darlington transistor. Features. Applications. Description

ST26025A. PNP power Darlington transistor. Features. Applications. Description ST26025A PNP power Darlington transistor Features High current monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications Automotive fan control Linear and switching

More information

STN9360. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed

STN9360. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed High voltage fast-switching PNP power transistor Datasheet production data Features High voltage capability Fast switching speed 4 Applications Lighting Switch mode power supply Description 2 SOT-223 3

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration

More information

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack STX112 STX117 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application

More information

BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed

BUX98A. High power NPN transistor. Features. Applications. Description. High voltage capability High current capability Fast switching speed High power NPN transistor Features High voltage capability High current capability Fast switching speed Applications High frequency and efficency converters Linear and switching industrial equipment Description

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) P-CHANNEL 20V - 0.065Ω - 5ASOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STT5PF20V 20 V < 0.080 Ω (@4.5V)

More information

BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description

BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable

More information

STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET

STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE

More information

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube

R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube 2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications

More information

Features. Description. Table 1. Device summary. Agency specification

Features. Description. Table 1. Device summary. Agency specification Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid. Figure 1. Internal schematic diagram Parameter

More information

STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram

STS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STS7PF30L 30V

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS9NF3LL 30 V

More information

2N4401 & 2N4403 General Purpose Switching Transistors

2N4401 & 2N4403 General Purpose Switching Transistors Features: NPN/PNP Silicon Planar Epitaxial Transistors. General purpose Switching Applications. 2N 4401 Type NPN. 2N 4403 Type PNP. 2N4401 NPN TO92 2N4403 PNP Dimensions Minimum Maximum A 4.32 5.33 B 4.45

More information

STD830CP40. Complementary transistor pair in a single package. Features. Application. Description

STD830CP40. Complementary transistor pair in a single package. Features. Application. Description Complementary transistor pair in a single package Datasheet production data Features Low CE(sat) Simplified circuit design Reduced component count Low spread of dynamic parameters Application Compact fluorescent

More information

Features. Description. Table 1. Device summary. Agency specification

Features. Description. Table 1. Device summary. Agency specification Hi-Rel NPN bipolar transistor 80 V - 5 A Features Datasheet - production data 2 3 TO-39 TO-257 2 3 SMD.5 Figure. Internal schematic diagram BV CEO I C (max) 80 V 5 A H FE at 0 V - 50 ma > 70 Operating

More information

D44H8 - D44H11 D45H8 - D45H11

D44H8 - D44H11 D45H8 - D45H11 D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description

More information

High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing

High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation

More information

-55 to 175 C T j ( ) Pulse width limited by safe operating area.

-55 to 175 C T j ( ) Pulse width limited by safe operating area. N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V

More information

Features. H FE at 10 V ma > 150. Description. Table 1. Device summary. Agency specification

Features. H FE at 10 V ma > 150. Description. Table 1. Device summary. Agency specification Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Features Datasheet - production data TO-78 1 2 3 4 5 6 LCC-6 Figure 1. Internal schematic diagram for TO-78 BV CEO I C (max) Hi-Rel PNP dual matched

More information

BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)).

BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS SWITCH

More information

STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET

STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V

More information

TDA7231A 1.6W AUDIO AMPLIFIER OPERATING VOLTAGE 1.8 TO 15 V LOW QUIESCENT CURRENT HIGH POWER CAPABILITY LOW CROSSOVER DISTORTION SOFT CLIPPING

TDA7231A 1.6W AUDIO AMPLIFIER OPERATING VOLTAGE 1.8 TO 15 V LOW QUIESCENT CURRENT HIGH POWER CAPABILITY LOW CROSSOVER DISTORTION SOFT CLIPPING 1.6 AUDIO AMPLIFIER OPERATING VOLTAGE 1.8 TO 15 V LO QUIESCENT CURRENT. HIGH POER CAPABILITY LO CROSSOVER DISTORTION SOFT CLIPPING DESCRIPTION The is a monolithic integrated circuit in 4 + 4 lead minidip

More information

STL128D. High voltage fast-switching NPN power transistor. Features. Applications. Description

STL128D. High voltage fast-switching NPN power transistor. Features. Applications. Description High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated antiparallel collector-emitter diode TAB Applications

More information

BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED

BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND

More information

STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET

STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D 30V

More information

STN High voltage fast-switching PNP power transistor. Features. Application. Description. High voltage capability Very high switching speed

STN High voltage fast-switching PNP power transistor. Features. Application. Description. High voltage capability Very high switching speed High voltage fast-switching PNP power transistor Features High voltage capability Very high switching speed 4 Application Electronics ballasts for fluorescent lighting Description 1 2 SOT-223 3 The device

More information

STB13007DT4. High voltage fast-switching NPN power transistor. General features. Internal schematic diagram. Description. Applications.

STB13007DT4. High voltage fast-switching NPN power transistor. General features. Internal schematic diagram. Description. Applications. High voltage fast-switching NPN power transistor General features Improved specification: Lower leakage current, Tighter gain range, DC current gain preselection, Tighter storage time range High voltage

More information

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s) PNP power Darlington transistor Features Monolithic Darlington configuration Integrated antiparallel collector-emitter diode Application Linear and switching industrial equipment Description The TIP145

More information

IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET

IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE V DSS R DS(on) I D IRFP460 500V < 0.27Ω 18.4A TYPICAL R DS (on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE

More information

L165 3A POWER OPERATIONAL AMPLIFIER

L165 3A POWER OPERATIONAL AMPLIFIER 3A POWER OPERATIONAL AMPLIFIER OUTPUT CURRENT UP TO 3A LARGE COMMON-MODE AND DIFFERENTIAL MODE RANGES SOA PROTECTION THERMAL PROTECTION ± 18V SUPPLY DESCRIPTION The L165 is a monolithic integrated circuit

More information

STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET

STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE

More information

MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description

MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description High voltage NPN power transistor for CRT TV Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement

More information