SD56120M RF POWER TRANSISTORS The LdmoST FAMILY
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1 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH- PULL P OUT = 120 W WITH 13 db 860 MHz /32V BeO FREE PACKAGE INTERNAL INPUT MATCHING ORDER CODE SD56120M M252 epoxy sealed BRANDING SD56120M DESCRIPTION The SD56120M is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD56120M is designed for high gain and broadband performance operating in common source mode at 32 V. Its internal matching makes it ideal for TV broadcast applications requiring high linearity. PIN CONNECTION Drain 2. Drain 3. Source 4. Gate 5. Gate ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 65 V V GS Gate-Source Voltage ± 20 V I D Drain Current 14 A P DISS Power Dissipation (@ Tc = 70 C) 236 W Tj Max. Operating Junction Temperature 200 C T STG Storage Temperature -65 to +150 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 0.55 C/W March, /8
2 ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC (Per Section) Symbol Test Conditions Min. Typ. Max. Unit V (BR)DSS V GS = 0 V I DS = 10 ma 65 V I DSS V GS = 0 V V DS = 28 V 1 µa I GSS V GS = 20 V V DS = 0 V 1 µa V GS(Q) V DS = 28 V I D = 100 ma V V DS(ON) V GS = 10 V I D = 3 A V G FS V DS = 10 V I D = 3 A 3 mho C ISS * V GS = 0 V V DS = 28 V f = 1 MHz 221 pf C OSS V GS = 0 V V DS = 28 V f = 1 MHz 48.9 pf C RSS V GS = 0 V V DS = 28 V f = 1 MHz 2.25 pf * Includes Internal Input Moscap. DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P OUT V DD = 32 V I DQ = 400 ma f = 860 MHz 120 W G PS V DD = 32 V I DQ = 400 ma P OUT = 120 W f = 860 MHz db η D V DD = 32 V I DQ = 400 ma P OUT = 120 W f = 860 MHz 50 % Load mismatch V DD = 32 V I DQ = 400 ma P OUT = 120 W f = 860 MHz ALL PHASE ANGLES 10:1 VSWR IMPEDANCE DATA D Z DL Typical Input Impedance Typical Drain Load Impedance G Zin S FREQ. Z IN (Ω) Z DL (Ω) 860 MHz j j 2.88 Measured drain to drain and gate to gate respectively. 2/8
3 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage SD56120M Gate-Source Voltage vs. Case Temperature C, CAPACITANCE (pf) Ciss Coss Crss f =1 MHz Vds, DRAIN-SOURCE VOLTAGE (V) Vgs, GATE-SOURCE VOLTAGE (NORMALIZE VDS = 10 V ID = 1 A 0.97 ID = 5 A ID = 4 A ID = 3 A ID = 2 A Tc, CASE TEMPERATURE ( C) Drain Current vs. Gate Voltage Id, DRAIN CURRENT (A) 9 8 Vds= 10V Vgs, GATE-SOURCE VOLTAGE (V) 3/8
4 TYPICAL PERFORMANCE Output Power & Efficiency vs. Input Power Power Gain vs. Output Power Pout, OUTPUT POWER (W) Pout Eff Vdd = 32 V Idq= 2 x 200 ma 30 f = 860 MHz Pin, INPUT POWER (W) Nd, EFFICIENCY (%) Gp, POWER GAIN (db) Idq = 2 x 600mA Idq = 2 x 400mA 18 Idq = 2 x 300mA 17 Idq = 2 x 200mA Vdd = 32V 13 f = 860 MHz Pout, OUTPUT POWER (W) Intermodulation Distortion vs. Output Power Output Power vs. Drain Voltage IMD3, INTERMODULATION DISTORTION (dbc) Idq = 2 x 200 ma Idq = 2 x 625 ma Idq = 2 x 400 ma f1= 860 MHz f2= MHz Vdd = 32 V Pout, OUTPUT POWER (WPEP) Pout, OUTPUT POWER (W) Vdd = 32 V Idq = 2 x 200 ma f = 860 MHz Pin = 5 W Pin = 2.5 W Pin = 1.25 W Vds, DRAIN VOLTAGE (V) 4/8
5 TEST CIRCUIT SCHEMATIC D.U.T. NOTEs: 1. C3 AND C4 ADJACENT TO EACH OTHER 2. GAP BETWEEN GROUND & TRANSMISSION LINE = [1.42] TYP. REF A TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION C1, C2, C10, C11 51 pf ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C3 9.1 pf ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C4, C GIGATRIM VARIABLE CAPACITOR C5, C9 5.6 pf ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C6 12 pf ATC 100A SURFACE MOUNT CERAMIC CHIP CAPACITOR C7 13 pf ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C12, C15, C18, C22 91 pf ATC 100B SURFACE MOUNT CERAMIC CHIP CAPACITOR C13, C16, C20, C24 10 µf 50V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR C14, C17, C21, C µf 500V SURFACE MOUNT CERAMIC CHIP CAPACITOR C19, C µf 63V ALUMINUM ELECTROLYTIC RADIAL LEAD CAPACITOR R1, R2, R3, R4 200 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR R5, R6 1.8 OHM 1/4 W SURFACE MOUNT CHIP RESISTOR B1, B2 BALUN, 25 OHM SEMI-RIDGE OD= 0.141, 2.37 LG COAXIAL CABLE OR EQUIVALENT L1, L2 CHIP INDICATOR 10 nh SURFACE MOUNT COIL FB1, FB2 SURFACE MOUNT EMI SHIELD BEAD PCB WOVEN GLASS REINFORCED / CERAMIC FILLED THK εr = 3.48, 2 Oz ED CU BOTH SIDES 5/8
6 TEST FIXTURE TEST CIRCUIT PHOTOMASTER 4 inches 6.4 inches 6/8
7 M252 (.400 x.860 4L BAL N/HERM W/FLG) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A B C D E F G H I J K L M N Controlling dimension: Inches C 7/8
8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8
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STAC4932B HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data Figure 1. Pin connection 1 STAC244B Air cavity 1 3 3 2 Excellent thermal stability Common source push-pull configuration
STD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D 30V
IRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE V DSS R DS(on) I D IRFP460 500V < 0.27Ω 18.4A TYPICAL R DS (on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE
STY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET
N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STY60NM50 500V < 0.05Ω 60 A TYPICAL R DS (on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
9.5 A 6.4 A. Symbol Parameter Value Unit
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS(on) I D STW9NA60 STH9NA60FI 600 V 600 V
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P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
DB RF power amplifier using PD85025-E for UHF OFDM radio. Features. Description
RF power amplifier using PD85025-E for UHF OFDM radio Features Excellent thermal stability Frequency: 340-520 MHz Supply voltage: 15 V Output power: 10 WPEP Gain: 19 ± 1 db Efficiency: 45 % - 52 % Load
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STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS(on) I D STP80NE03L-06 30 V < 0.006 Ω 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE
SD3933. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Excellent thermal stability Common source configuration P OUT = 350 W min. with 29 db gain @ 30 MHz In compliance with the 2002/95/EEC European directive
N-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800
STW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW9NC80Z 800 V
Dual P-channel 100 V, Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island. Features
Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. LM150/LM250 LM350 THREE-TERMINAL 3 A ADJUSTABLE VOLTAGE REGULATORS GUARANTEED
DB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description
Evaluation board using PD85004 for 900 MHz 2-way radio Features Excellent thermal stability Frequency: 860-960 MHz Supply voltage: 13.6 V Output power: 4 W Power gain: 17.4 ± 0.3 db Efficiency: 56 % -
IRFP460. N - CHANNEL 500V Ω - 20 A - TO-247 PowerMESH MOSFET
IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP460 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
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N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
N - CHANNEL 100V mω - 180A - ISOTOP POWER MOSFET
STE180N10 N - CHANNEL 100V - 5.5 mω - 180A - ISOTOP POWER MOSFET TYPE V DSS R DS(on) I D STE180N10 100 V < 7 mω 180 A TYPICAL RDS(on) = 5.5 mω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE
STW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET
STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D STW9NB80 800 V < 1 Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE
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N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8Ω - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STD1NK60 STD1NK60-1 STQ1HNK60R STN1HNK60
STP90NF03L STB90NF03L-1
STP90NF03L STB90NF03L-1 N-channel 30V - 0.0056Ω -90A TO-220/I 2 PAK Low gate charge STripFET Power MOSFET General features Type V DSS (@Tjmax) Optimal R DS (on) x Q g trade-off Conduction losses reduced
STS4DNF60L. N-channel 60 V, Ω, 4 A, SO-8 STripFET Power MOSFET. Features. Application. Description
Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
STP14NF10. N-channel 100 V Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET. Features. Application. Description
N-channel 100 V - 0.115 Ω - 15 A - TO-220 low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP14NF10 100 V < 0.13 Ω 15 A Exceptional dv/dt capability 100% avalanche tested
STP40NF12. N-channel 120V Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET. General features. Description. Internal schematic diagram
N-channel 120V - 0.028Ω - 40A TO-220 Low gate charge STripFET II Power MOSFET General features Type V DSS R DS(on) I D STP40NF12 120V
STW26NM60 N-CHANNEL 600V Ω - 30A TO-247 MDmesh MOSFET
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STW26NM60 600 V < 0.135 Ω 30 A TYPICAL R DS (on) = 0.125 Ω HIGH dv/dt AND AVALANCHE
STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET
STD1LNK60Z-1 STQ1NK60ZR - STN1NK60Z N-CHANNEL 600V 13Ω 0.8A TO-92/IPAK/SOT-223 Zener-Protected SuperMESH MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Pw STQ1NK60ZR STD1LNK60Z-1 STN1NK60Z 600
N-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V