PD PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
|
|
- Blanche Higgins
- 5 years ago
- Views:
Transcription
1 PD55- PD55S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION NEW RF PLASTIC PACKAGE DESCRIPTION The PD55 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates atvincommon sourcemodeatfrequenciesof up to 1GHz. PD55 boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the firsttrue SMD plastic RF power package, PowerSO-RF. PD55 s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO- plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. PowerSO-RF (Formed Lead) ORDER CODE BRANDING PD55 XPD55 PowerSO-RF (Straight Lead) ORDER CODE BRANDING PD55S XPD55S ABSOLUTEMAXIMUMRATINGS(T CASE =5 O C) Symbol Parameter Value Unit V (BR)DSS DrainSourceVoltage V V GS Gate-SourceVoltage ± V I D DrainCurrent A P DISS PowerDissipation(@Tc=7 C) 5. W T j Max.OperatingJunctionTemperature 15 O C T STG StorageTemperature -5to15 O C THERMAL DATA R th(j-c) Junction-Case ThermalResistance 1. OC/W May 1/
2 PD55- PD55S ELECTRICALSPECIFICATION(T CASE =5 C) STATIC Symbol Parameter Min. Typ. Max. Unit I DSS V GS =V V DS =V 1 µa I GSS V GS =V V DS =V 1 µa V GS(Q) V DS =V I D =15mA. 5. V V DS(ON) V GS =V I D =1.5A 1. V g FS V DS =V I D =1.5A 1. mho C ISS V GS =V V DS =.5V f=1mhz 5 pf C OSS V GS =V V DS =.5V f=1mhz 39 pf C RSS V GS =V V DS =.5V f=1mhz. pf DYNAMIC Symbol Parameter Min. Typ. Max. Unit P OUT f= V DD =.5V I DQ =15mA W G PS f= V DD =.5V P OUT =W I DQ =15mA 17 db η D f= V DD =.5V P OUT =W I DQ =15mA 55 % LOAD Mismatch f= V DD =15.5V P OUT =W I DQ =15mA ALL PHASE ANGLES :1 VSWR PIN CONNECTION D SOURCE Z DL GATE DRAIN Typical Input Impedance Typical Drain Load Impedance G Zin SC15 SC131 S PD55 IMPEDANCE DATA PD55S Frequency MHz Zin Ω Zdl Ω Frequency MHz Zin Ω Zdl Ω j j j j j j j j j j j.77. +j1.9 /
3 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage f=1mhz PD55- PD55S Drain Current vs. Gate Voltage 7 C, CAPACITANCES(pF) Ciss Coss Crss Id, DRAIN CURRENT(A) VDS=V VDD, DRAIN VOLTAGE(V) VGS, GATE-SOURCE VOLTAGE (V) Gate-Source vs. Case Temperature VGS, GATE-SOURCE VOLTAGE(NORMALIZED) VDS=V ID=.5A.9 ID=A ID=1.5A ID=1A ID=.5A Tc, CASE TEMPERATURE( C) 3/
4 PD55- PD55S TYPICAL PERFORMANCE Output Power vs. Input Power 1 PD55 Power Gain vs. Output Power IDQ=15mA Pg, POWER GAIN(dB) IDQ=15mA Pin, INPUT POWER(W) Drain Efficiency vs. Output Power Input Return Loss vs. Output Power 7 Nd, DRAIN EFFICIENCY(%) 5 3 IDQ=15mA Rtl, INPUT RETURN LOSS(dB) IDQ=15mA Output Power vs. Bias Current - Drain Efficiency vs. Bias Current 7 Pin=1.7dBm Nd, DRAIN EFFICIENCY(%) 5 3 Pin=1.7dBm IDQ, BIAS CURRENT(mA) IDQ, BIAS CURRENT(mA) /
5 TYPICAL PERFORMANCE Output Power vs. Supply Voltage VDD, SUPPLY VOLTAGE(V) Output Power vs. Gate-Source Voltage Idq=15mA Pin=1.7dBm Pin=1.7 dbm 1 3 VGS, GATE-SOURCE VOLTAGE(V) Drain Efficency vs. Supply Voltage Nd, DRAIN EFFICIENCY(%) PD55- PD55S VDD, SUPPLY VOLTAGE(V) Pin, INPUT POWER(W) Idq=15mA Pin=1.7 dbm Output Power vs. Input Power PD55S IDQ=15mA Power Gain vs. Output Power Drain Efficiency vs. Output Power 7 Pg, POWER GAIN(dB) IDQ=15mA Nd, DRAIN EFFICIENCY (%) 5 3 IDQ=15mA 1 5/
6 PD55- PD55S TYPICAL PERFORMANCE Input Return Loss vs. Output Power Output Power vs. Bias Current Rtl, INPUT RETURN LOSS(dB) IDQ=15mA Pin=1dBm - Drain Efficiency vs. Bias Current IDQ, BIAS CURRENT(mA) Output Power vs. Supply Voltage 11 Nd, DRAIN EFFICIENCY(%) 5 3 Pin=1dBm Idq=15mA Pin=1dBm IDQ, BIAS CURRENT(mA) Drain Efficency vs. Supply Voltage VDD, SUPPLY VOLTAGE(V) Output Power vs. Gate-Source Voltage Nd, DRAIN EFFICIENCY (%) 5 3 Idq=15 ma Pin= 1dBm Pin=1dBm VDD, SUPPLY VOLTAGE(V) 1 3 VGS, GATE-SOURCE VOLTAGE(V) /
7 PD55- PD55S TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST B1,B SHORT FERRITT BEAD, FAIR RITE PRODUCTS(731) R 33KΩ, 1/ W RESISTOR C1,C pf, mil CHIP CAPACITOR Z1.51 X. MICROSTRIP C,C3,C,C11 to pf TRIMMER CAPACITOR Z 1.5 X. MICROSTRIP C pf, mil CHIP CAP Z3. X. MICROSTRIP C5,C1 pf, mil CHIP CAP Z.155 X. MICROSTRIP C,C13 µf, 5V ELECTROLYTIC CAPACITOR Z5,Z. X.3 MICROSTRIP C7,C1 1.pF mil CHIP CAP Z7.5 X. MICROSTRIP C,C15.1 F, mil CHIP CAP Z. X. MICROSTRIP C9 3pF, mil CHIP CAP Z X. MICROSTRIP L nh, TURN, COILCRAFT Z.33 X. MICROSTRIP N1,N TYPE N FLANGE MOUNT BOARD ROGER, ULTRA LAM R1 15 Ω,5CHIPRESISTOR THK.3 ε r =.55 R 51 Ω,1/WRESISTOR ozedcusides R3 Ω, 5 CHIP RESISTOR 7/
8 PD55- PD55S TEST CIRCUIT TEST CIRCUIT PHOTOMASTER inches. inches /
9 PowerSO-RF(Straight Lead) MECHANICAL DATA PD55- PD55S PowerSO-RF(Formed Lead) MECHANICAL DATA 9/
10 PD55- PD55S Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences ofuseofsuchinformationnorforanyinfringementofpatentsorotherrightsofthirdpartieswhichmayresultfromitsuse.nolicenseisgranted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics STMicroelectronics- All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia-Brazil-China-Finland-France-Germany-HongKong-India-Italy-Japan-Malaysia-Malta-Morocco- Singapore-Spain-Sweden-Switzerland-UnitedKingdom-U.S.A. /
PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PD55 PD55S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = W with 17 db gain @ /.5V NEW RF PLASTIC
More informationPD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 3 W WITH 12 db gain @ NEW
More informationPD55015 PD55015S RF POWER TRANSISTORS The LdmoST FAMILY
PD5515 PD5515S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 15 W with 14 db gain @ / 12.5 V NEW RF PLASTIC
More informationGate. Order code Package Packing
PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 8 W with 17dB gain @
More informationOrder code Package Packing
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 6 W with 15dB gain @ / 28 V New RF plastic
More informationGate. Order code Package Packing
PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 35 W with 16.9dB gain
More informationSD56120M RF POWER TRANSISTORS The LdmoST FAMILY
RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION, PUSH- PULL P OUT = 120 W WITH 13 db gain @ 860 MHz /32V BeO FREE
More informationGate. Order code Package Packing
PD57060S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 60 W with 14.3dB gain@ 945 MHz/28
More informationGate. Order code Package Packing
PD57045-E PD57045S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 45 W with 13dB gain
More informationSD2900. RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2-5 MHz 5 WATTS 28 VOLTS 13.5 db MIN. AT 4 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION
More informationSD RF POWER TRANSISTORS The LdmoST FAMILY
RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 3 W WITH 13 db gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION
More informationGate. Order code Package Packing
RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 18 W with 16.5dB gain@945 MHz/28 V New RF
More informationGate. Order codes Package Packaging
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Datasheet production data Features Excellent thermal stability Common source configuration P OUT = 15 W with 16 db
More informationGate. Order codes Package Packing. November 2012 Doc ID Rev 1 1/18
RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet preliminary data Features Operating frequencies from 1 MHz to 1000 MHz P OUT > 50W with 12dB gain @ 870
More informationGate. Order codes Packages Packaging. PD85006-E PowerSO-10RF (formed lead) Tube PD85006TR-E PowerSO-10RF (formed lead) Tape and reel
RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration Broadband performances: P OUT = 6 W with 15 db gain
More informationSD56120M. RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs. General features. Description.
RF POWER Transistors, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features Excellent thermal stability Common source configuration Push-pull P OUT = 120W with 13dB gain @ 860MHz
More informationRefTitle1 PD84008L-E. RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs. Features. Description
RefTitle1 PD848L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT = 8 W with 13 db gain @ 87
More informationLET9060C. RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs. Features. Description
RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT (@ 28 V)= 60 W with 18 db gain @ 945 MHz
More informationPD54003L-E. RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs. Features. Description
RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P OUT =3 W mith 20dB gain@500 MHz New leadless plastic
More informationSD3932. RF power transistors HF/VHF/UHF N-channel MOSFETs. Features. Description
RF power transistors HF/VHF/UHF N-channel MOSFETs Features Excellent thermal stability Common source push-pull configuration P OUT = 350 W min. with 26.8 db gain @ 123 MHz In compliance with the 2002/95/EC
More informationPD RF power transistor the LdmoST plastic family. Features. Description
RF power transistor the LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P OUT = 1 W with 15 db gain @ 870 MHz Plastic package ESD protection
More informationPD RF power transistor The LdmoST plastic family. Features. Description
RF power transistor The LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P OUT = 2 W with 13 db gain @ 870 MHz Plastic package ESD protection
More informationSD RF power transistor HF/VHF/UHF N-channel power MOSFETs. Features. Description
RF power transistor HF/VHF/UHF N-channel power MOSFETs Features Gold metallization Excellent thermal stability Common source configuration P OUT = 150 W min. with 14 db gain @ 175 MHz Thermally enhanced
More informationSD HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration P OUT = 175 W min. with 15 db gain @ 175 MHz Low R DS(on) Thermally enhanced packaging
More informationFeatures. Description. Table 1. Device summary. Order code Packaging Branding LET9180 M246 LET9180. May 2013 DocID Rev 1 1/10
180 W, 32 V Wideband LDMOS transistor Features Datasheet - target specification Excellent thermal stability Common source configuration push-pull P OUT = 180 W with 19 db gain @ 860 MHz BeO-free package
More informationSD2942. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration, push pull P OUT = 350 W min. with 15 db gain @ 175 MHz Low R DS(on) Description
More informationSD2933. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration P OUT = 300 W min. with 20 db gain @ 30 MHz Thermally enhanced packaging for lower
More informationSD MR. 150 W 50 V moisture resistant HF/VHF DMOS transistor. Datasheet. Features. Description
Datasheet 15 W 5 V moisture resistant HF/VHF DMOS transistor M174MR epoxy sealed 4 1. Drain 2. Source 3. Gate 4. Source 3 1 2 Features Gold metallization Excellent thermal stability Common source push-pull
More informationSTAC3932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data Excellent thermal stability Common source push-pull configuration P OUT = 580 W typ. with 24.6 db gain @ 123 MHz In compliance
More informationSD2933. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Datasheet - production data M177 Epoxy sealed Figure 1. Pin connection 4 1 Gold metalization Excellent thermal stability Common source configuration P OUT
More informationObsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.065Ω - 5ASOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STT5PF20V 20 V < 0.080 Ω (@4.5V)
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 30V - 0.016 Ω - 9A SO-8 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS9NF3LL 30 V
More informationSTW20NB50. N - CHANNEL 500V Ω - 20A - TO-247 PowerMESH MOSFET
N - CHANNEL 500V - 0.22Ω - 20A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 0.25 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 100V - 0.009 Ω - 140A MAX247 MESH OVERLAY POWER MOSFET STY140NS10 100V
More information1. Drain 2. Gate. Order code Marking Package Packaging. STAC4932F STAC4932F STAC244F Plastic tray. September 2010 Doc ID Rev 3 1/12
RF power transistors HF/VHF/UHF N-channel MOSFETs Preliminary data Features Excellent thermal stability Common source push-pull configuration P OUT = 1000 W min. (1200 W typ.) with 26 db gain @ 123 MHz
More informationSD4931. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data M174 Epoxy sealed Figure 1. Pin connection 4 1 Improved ruggedness V (BR)DSS > 200 V Excellent thermal stability 20:1 all phases
More informationSTS7PF30L P-CHANNEL 30V Ω - 7A - SO-8 STripFET II Power MOSFET General features Description Internal schematic diagram
P-CHANNEL 30V - 0.16Ω - 7A - SO-8 STripFET II Power MOSFET General features Type V DSS R DS(on) I D STS7PF30L 30V
More informationSTD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
More informationSTS5PF30L P-CHANNEL 30V Ω - 5A SO-8 STRIPFET POWER MOSFET
P-CHANNEL 30V - 0.070 Ω - 5A SO-8 STRIPFET POWER MOSFET TYPE V DSS R DS(on) I D STS5PF30L 30V
More informationSD4933. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data Improved ruggedness V (BR)DSS > 200 V Excellent thermal stability 20:1 all phases load mismatch capability P OUT = 300 W min. with
More information-55 to 175 C T j ( ) Pulse width limited by safe operating area.
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V
More informationSD3933. RF power transistors HF/VHF/UHF N-channel MOSFETs. Features. Description
RF power transistors HF/VHF/UHF N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration P OUT = 35 W min. with 29 db gain @ 3 MHz In compliance with the 22/95/EEC
More informationSTP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
More informationSTS7NF60L N-CHANNEL 60V Ω - 7.5A SO-8 STripFET II POWER MOSFET
N-CHANNEL 60V - 0.017 Ω - 7.5A SO-8 STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STS7NF60L 60 V < 0.0195 Ω 7.5 A TYPICAL R DS (on) = 0.017 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY
More information50 V moisture resistant DMOS transistor for ISM applications. Features. Description. Table 1. Device summary
50 V moisture resistant DMOS transistor for ISM applications Features Datasheet - production data M177MR Epoxy sealed Figure 1. Pin connection 3 4 1 2 5 Improved ruggedness V (BR)DSS > 200 V Excellent
More informationSTD20NF06L N-CHANNEL 60V Ω - 24A DPAK/IPAK STripFET II POWER MOSFET
Table 1: General Features N-CHANNEL 60V - 0.032 Ω - 24A DPAK/IPAK STripFET II POWER MOSFET Figure 1:Package TYPE V DSS R DS(on) I D -1 60 V 60 V TYPICAL R DS (on) = 0.032 Ω < 0.040 Ω < 0.040 Ω EXCEPTIONAL
More informationSD2932. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Gold metallization Excellent thermal stability Common source configuration, push-pull P OUT = 300 W min. with 15 db gain @ 175 MHz Description The SD2932
More informationSTS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET
TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE
More informationIRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC
More informationSTD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
More informationIRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D IRF540 100 V
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STW34NB20 200 V < 0.075 Ω 34 A FEATURES SUMMARY TYPICAL R DS(on) = 0.062 Ω EXTREMELY
More informationObsolete Product(s) - Obsolete Product(s)
STP60NE06-16 STP60NE06-16FP N-CHANNEL 60V - 0.013 Ω - 60A TO-220/TO-220FP "SINGLE FEATURE SIZE " POWER MOSFET Table 1. General Features Figure 1. Package Type V DSS R DS(on) I D STP60NE06-16 60 V < 0.016
More informationSTF12PF06 P-CHANNEL 60V Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET
STP12PF06 STF12PF06 P-CHANNEL 60V - 0.18 Ω - 12A TO-220/TO-220FP STripFET II POWER MOSFET Table 1: General Features TYPE V DSS R DS(on) I D Figure 1:Package STP12PF06 STF12PF06 60 V 60 V TYPICAL R DS (on)
More informationIRFP460. N - CHANNEL 500V Ω - 20 A - TO-247 PowerMESH MOSFET
IRFP460 N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRFP460 500 V < 0.27 Ω 20 A TYPICAL RDS(on) = 0.22 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
More informationSTAC LDMOS avionics radar transistor. Features. Description
LDMOS avionics radar transistor Features Datasheet - production data Excellent thermal stability Common source configuration push-pull P OUT = 250 W with 16 db gain over 960-1215 MHz ST Air Cavity / STAC
More information9.5 A 6.4 A. Symbol Parameter Value Unit
STW9NA60 STH9NA60FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS(on) I D STW9NA60 STH9NA60FI 600 V 600 V
More informationDB RF power amplifier using PD85025-E for UHF OFDM radio. Features. Description
RF power amplifier using PD85025-E for UHF OFDM radio Features Excellent thermal stability Frequency: 470-698 MHz Supply voltage: 13.6 V Output power: 10 WPEP Gain: 15.3 ± 0.8 db Efficiency: 48 % - 73
More informationObsolete Product(s) - Obsolete Product(s)
STP80NE03L-06 N - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE " POWER MOSFET TYPE V DSS R DS(on) I D STP80NE03L-06 30 V < 0.006 Ω 80 A TYPICAL RDS(on) = 0.005 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE
More informationSD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS
RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial
More informationSTW9NB80. N-CHANNEL 800V Ω - 9.3A - TO-247 PowerMESH MOSFET
STW9NB80 N-CHANNEL 800V - 0.85Ω - 9.3A - TO-247 PowerMESH MOSFET TYPE V DSS R DS(on) I D STW9NB80 800 V < 1 Ω 9.3 A TYPICAL RDS(on) = 0.85 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE
More informationSTP36NF06 STP36NF06FP
STP36NF06 STP36NF06FP N-CHANNEL 60V - 0.032 Ω - 30A TO-220/TO-220FP STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP36NF06 STP36NF06FP 60 V 60 V TYPICAL R DS (on) = 0.032 Ω
More informationSTD16NF06. N-Channel 60V Ω - 16A - DPAK STripFET II Power MOSFET. General features. Description. Internal schematic diagram.
N-Channel 60V - 0.060Ω - 16A - DPAK STripFET II Power MOSFET General features Type V DSS R DS(on) I D STD16NF06 60V
More informationN - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET 4 A 4 A. Symbol Parameter Value Unit
STP4NB80 STP4NB80FP N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP PowerMESH MOSFET TYPE V DSS R DS(on) I D STP4NB80 STP4NB80FP 800 V 800 V 3.3 Ω 3.3 Ω 4 A 4 A TYPICAL R DS(on) = 3 Ω EXTREMELY HIGH dv/dt
More informationN - CHANNEL 100V mω - 180A - ISOTOP POWER MOSFET
STE180N10 N - CHANNEL 100V - 5.5 mω - 180A - ISOTOP POWER MOSFET TYPE V DSS R DS(on) I D STE180N10 100 V < 7 mω 180 A TYPICAL RDS(on) = 5.5 mω 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE
More informationSTD17NF03L N-CHANNEL 30V Ω - 17A - DPAK/IPAK STripFET POWER MOSFET
N-CHANNEL 30V - 0.038Ω - 17A - DPAK/IPAK STripFET POWER MOSFET TYPE V DSS R DS(on) I D 30V
More informationIRF830. N - CHANNEL 500V Ω - 4.5A - TO-220 PowerMESH MOSFET
IRF830 N - CHANNEL 500V - 1.35Ω - 4.5A - TO-220 PowerMESH MOSFET TYPE V DSS R DS(on) I D IRF830 500 V < 1.5 Ω 4.5 A TYPICAL R DS(on) = 1.35 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY
More informationSTB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP
STB55NF06 STB55NF06-1 STP55NF06 STP55NF06FP N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I ² PAK/D²PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF06 STB55NF06-1 STB55NF06 STP55NF06FP 60 V
More informationDB Evaluation board using PD85004 for 900 MHz 2-way radio. Features. Description
Evaluation board using PD85004 for 900 MHz 2-way radio Features Excellent thermal stability Frequency: 860-960 MHz Supply voltage: 13.6 V Output power: 4 W Power gain: 17.4 ± 0.3 db Efficiency: 56 % -
More informationDB RF power amplifier using PD85025-E for UHF OFDM radio. Features. Description
RF power amplifier using PD85025-E for UHF OFDM radio Features Excellent thermal stability Frequency: 340-520 MHz Supply voltage: 15 V Output power: 10 WPEP Gain: 19 ± 1 db Efficiency: 45 % - 52 % Load
More information200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package. Features. Description. Table 1. Device summary. Order code Marking Package Packaging
200 W, 32 V HF to 1.3 GHz LDMOS transistor in a STAC package Features Datasheet - preliminary data Figure 1. Pin connection 1 STAC244B Air cavity 1 2 Improved ruggedness: V (BR)DSS > 80 V Load mismatch
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 55 V, 1.8 mω, 200 A, PowerSO-10 STripFET Power MOSFET Features Type V DSS R DS(on) max Conduction losses reduced Low profile, very low parasitic inductance Application Switching applications
More informationSTAC4932B. HF/VHF/UHF RF power N-channel MOSFET. Features. Description
STAC4932B HF/VHF/UHF RF power N-channel MOSFET Features Datasheet - production data Figure 1. Pin connection 1 STAC244B Air cavity 1 3 3 2 Excellent thermal stability Common source push-pull configuration
More informationSTP80NF10 STB80NF10 N-CHANNEL 100V Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET
STP80NF10 STB80NF10 N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D 2 PAK LOW GATE CHARGE STripFET II MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STB80NF10 STP80NF10 100 V 100 V
More informationIRFP460 N-CHANNEL 500V Ω A TO-247 PowerMesh II MOSFET
N-CHANNEL 500V - 0.22Ω - 18.4A TO-247 PowerMesh II MOSFET TYPE V DSS R DS(on) I D IRFP460 500V < 0.27Ω 18.4A TYPICAL R DS (on) = 0.22Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE
More informationAN1224 Application note
Application note Evaluation board using SD57045 LDMOS RF transistor for FM broadcast application Introduction LDMOS technology allows the manufacturing of high efficiency and high gain amplifiers for FM
More informationSTD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
More informationSTY60NM50 N-CHANNEL 500V Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET
N-CHANNEL 500V - 0.045Ω - 60A Max247 Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STY60NM50 500V < 0.05Ω 60 A TYPICAL R DS (on) = 0.045Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
More informationObsolete Product(s) - Obsolete Product(s)
N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND
More informationSD3933. HF/VHF/UHF RF power N-channel MOSFETs. Features. Description
HF/VHF/UHF RF power N-channel MOSFETs Features Excellent thermal stability Common source configuration P OUT = 350 W min. with 29 db gain @ 30 MHz In compliance with the 2002/95/EEC European directive
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30V - 0.020Ω - 6A - TSSOP8 2.5V-drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D 30V < 0.025 Ω (@ 4.5 V) < 0.030 Ω (@ 2.7 V) 6A Ultra low threshold gate drive (2.5V) Standard
More informationObsolete Product(s) - Obsolete Product(s)
N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT (3.3x3.3) ultra low gate charge STripFET Power MOSFET Features Type V DSS R DS(on) I D 30V
More informationSD1275 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS. FEATURES SUMMARY 160 MHz 13.6 VOLTS COMMON EMITTER P OUT = 40 W MIN.
RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY 1 MHz 13.6 VOLTS COMMON EMITTER P OUT = W MIN. WITH 9 db GAIN Figure 1. Package DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial
More informationSTS10N3LH5. N-channel 30 V, Ω, 10 A, SO-8 STripFET V Power MOSFET. Features. Application. Description
STSN3LH5 Nchannel 30 V, 0.019 Ω, A, SO8 STripFET V Power MOSFET Features Type V DSS R DS(on) max I D STSN3LH5 30 V 0.021 Ω A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) Very low
More informationELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara
SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source
More informationSTW9NC80Z N-CHANNEL 800V Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 800V - 0.82Ω - 9.4A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW9NC80Z 800 V
More informationSTP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1
STP21NM50N-STF21NM50N-STW21NM50N STB21NM50N - STB21NM50N-1 N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D 2 /I 2 PAK/TO-247 SECOND GENERATION MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V
More informationSTD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET
TYPE V DSS R DS(on) I D STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA STD7NS20 STD7NS20-1 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL R DS (on) = 0.35
More informationN-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-220FP package. Features. Description. AM15572v1
STF1N6M2 N-channel 6 V,.56 Ω typ., 7.5 A MDmesh II Plus low Q g Power MOSFET in a TO-22FP package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STF1N6M2 65 V.6 Ω 7.5 A TO-22FP
More informationN-channel 500 V, Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package. Features. Description. Table 1. Device summary
N-channel 500 V, 0.035 Ω, 68 A, MDmesh II Power MOSFET in a TO-247 package Features Datasheet - production data Order code V DSS (@T jmax ) R DS(on) max I D STW60NM50N 550 V
More informationObsolete Product(s) - Obsolete Product(s)
P-channel 20V - 0.065Ω - 4.2A - SOT-223 2.5V - Drive STripFET II Power MOSFET General features Type V DSS R DS(on) I D STN5PF02V 20V
More informationSTW6NC90Z N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 2.1Ω - 5.2A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW6NC90Z 900 V < 2.5 Ω 5.2A TYPICAL R DS (on) = 2.1Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER
More informationN-channel 75 V, Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package. Order codes Marking Package Packaging
Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
More informationSTW8NC90Z N-CHANNEL 900V Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET
N-CHANNEL 900V - 1.1 Ω - 7.6A TO-247 Zener-Protected PowerMESH III MOSFET TYPE V DSS R DS(on) I D STW8NC90Z 900 V < 1.38 Ω 7.6 A TYPICAL R DS (on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATE- TO-SOURCE
More informationSTW26NM60 N-CHANNEL 600V Ω - 30A TO-247 MDmesh MOSFET
N-CHANNEL 600V - 0.125Ω - 30A TO-247 MDmesh MOSFET Table 1: General Features Figure 1: Package TYPE V DSS R DS(on) I D STW26NM60 600 V < 0.135 Ω 30 A TYPICAL R DS (on) = 0.125 Ω HIGH dv/dt AND AVALANCHE
More information2N7000 2N7002. N-channel 60V - 1.8Ω A - SOT23-3L / TO-92 STripFET Power MOSFET. General features. Description. Internal schematic diagram
2N7000 2N7002 N-channel 60V - 1.8Ω - 0.35A - SOT23-3L / TO-92 STripFET Power MOSFET General features Type V DSS R DS(on) I D 2N7000 60V
More informationSD1731 (TH562) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS. Figure 1. Package
RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 13 db GAIN Figure 1. Package
More information2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal
More information50 A 27 A ABSOLUTE MAXIMUM RATINGS. Symbol Parameter Value Unit
IRFZ40 IRFZ40FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS IRFZ40 IRFZ40FI TYPE V DSS R DS(on) I D 50 V 50 V < 0.028 Ω < 0.028 Ω 50 A 27 A TYPICAL RDS(on) = 0.022 Ω AVALANCHE RUGGED TECHNOLOGY
More informationSTE70NM60 N-CHANNEL 600V Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET
N-CHANNEL 600V - 0.050Ω - 70A ISOTOP Zener-Protected MDmesh Power MOSFET TYPE V DSS R DS(on) I D STE70NM60 600V < 0.055Ω 70 A TYPICAL R DS (on) = 0.050Ω HIGH dv/dt AND AVALANCHE CAPABILITIES IMPROVED ESD
More information