PD55015 PD55015S RF POWER TRANSISTORS The LdmoST FAMILY

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1 PD5515 PD5515S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = 15 W with 14 db / 12.5 V NEW RF PLASTIC PACKAGE DESCRIPTION The PD5515 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. PD5515 boasts the excellent gain, linearity and reliability of ST s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-RF. PD5515 s superior linearity performance makes it an ideal solution for car mobile radio. PowerSO-RF (formed lead) ORDER CODE PD5515 BRANDING PD5515 The PowerSO- plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. ORDER CODE PD5515S PowerSO-RF (straight lead) BRANDING PD5515S Mounting recommendations are available in (look for application note AN1294) ABSOLUTE MAXIMUM RATINGS (T CASE = 25 C) Symbol Parameter Value Unit V (BR)DSS Drain-Source Voltage 4 V V GS Gate-Source Voltage ± 2 V I D Drain Current 5 A P DISS Power Dissipation (@ Tc = 7 C) 73 W Tj Max. Operating Junction Temperature 165 C T STG Storage Temperature -65 to +15 C THERMAL DATA R th(j-c) Junction -Case Thermal Resistance 1.2 C/W April, /18

2 ELECTRICAL SPECIFICATION (T CASE = 25 C) STATIC Symbol Test Conditions Min. Typ. Max. Unit I DSS V GS = V V DS = 28 V 1 µa I GSS V GS = 2 V V DS = V 1 µa V GS(Q) V DS = V I D = 15 ma V V DS(ON) V GS = V I D = 2.5 A.8 V g FS V DS = V I D = 2.5 A mho C ISS V GS = V V DS = 12.5 V f = 1 MHz 89 pf C OSS V GS = V V DS = 12.5 V f = 1 MHz 6 pf C RSS V GS = V V DS = 12.5 V f = 1 MHz 6.5 pf DYNAMIC Symbol Test Conditions Min. Typ. Max. Unit P 1dB V DD = 12.5 V I DQ = 15 ma f = 15 W G P V DD = 12.5 V I DQ = 15 ma P OUT = 15 W f = db η D V DD = 12.5 V I DQ = 15 ma P OUT = 15 W f = 5 55 % Load V DD = 15.5 V I DQ = 15 ma mismatch ALL PHASE ANGLES P OUT = 15 W f = 2:1 VSWR PIN CONNECTION SOURCE D Z DL GATE DRAIN Typical Input Impedance Typical Drain Load Impedance G Zin S SC152 SC1314 IMPEDANCE DATA PD5515 PD5515S FREQ. MHz Z IN (Ω) Z DL (Ω) FREQ. MHz Z IN (Ω) Z DL (Ω) j j j j j j j j j j j j j j j j j j.37 2/18

3 TYPICAL PERFORMANCE Capacitance vs. Drain Voltage Drain Current vs. Gate Voltage PD PD5515S C (pf) 4 Ciss Coss Crss f=1 MHz VDS (V) Id, DRAIN CURRENT (A) VDS = V Vgs, GATE-SOURCE VOLTAGE (V) Gate-Source Voltage vs. Case Temperature VGS, GATE-SOURCE VOLTAGE (NORMALIZED) ID = 3A ID 1 = 2A ID = 1.5 A ID = 1A.98 VDS = V ID =.25 A Tc, CASE TEMPERATURE ( C) 3/18

4 TYPICAL PERFORMANCE Output Power vs. Input Power PD5515 Power Gain vs. Output Power VDD = V 2 IDQ = 15 ma Pin, INPUT POWER (W) Gp, POWER GAIN (db) Idq = 15 ma Drain Efficiency vs. Output Power Return Loss vs. Output Power 6 Nd, DRAIN EFFICIENCY (%) Idq = 15 ma Rtl, RETURN LOSS (db) Idq = 15 ma Output Power vs. Bias Current Drain Efficiency vs. Bias Current Pin =.7 W Nd, DRAIN EFFICIENCY (%) Pin =.7 W Idq, BIAS CURRENT (ma) Idq, BIAS CURRENT (ma) 4/18

5 TYPICAL PERFORMANCE Output Power vs. Drain Voltage Drain Efficiency vs. Drain Voltage PD PD5515S Idq = 15mA Pin =.7 W Nd, DRAIN EFFICIENCY (%) IDQ = 15mA Pin =.7 W VDS, DRAIN-SOURCE VOLTAGE (V) VDS, DRAIN-SOURCE VOLTAGE (V) Output Power vs. Gate Bias Voltage Output Power vs. Input Power PD5515S VDD = 12.5 V Pin =.7 W VDD = V IDQ = 15 ma VGS, GATE BIAS VOLTAGE (V) Pin, INPUT POWER (W) Power Gain vs. Output Power Drain Efficiency vs. Output Power 18 6 Gp, POWER GAIN (db) Idq = 15 ma Nd, DRAIN EFFICIENCY (%) Idq = 15 ma /18

6 TYPICAL PERFORMANCE Return Loss vs. Output Power Output Power vs. Bias Current 22 Rtl, RETURN LOSS (db) Idq = 15 ma Pin =.5 W Idq, BIAS CURRENT (ma) Drain Efficiency vs. Bias Current Output Power vs. Drain Voltage 7 25 Nd, DRAIN EFFICIENCY (%) Pin =.5 W Idq, BIAS CURRENT (ma) Idq = 15mA Pin =.5 W VDS, DRAIN-SOURCE VOLTAGE (V) Drain Efficiency vs. Drain Voltage Output Power vs. Gate Bias Voltage 7 2 Nd, DRAIN EFFICIENCY (%) Idq = 15mA Pin =.5 W 15 5 VDD = 12.5 V Pin =.5 W VDS, DRAIN-SOURCE VOLTAGE (V) VGS, GATE BIAS VOLTAGE (V) 6/18

7 TYPICAL PERFORMANCE ( MHz) Power Gain vs. Output Power PD5515S Drain Efficiency vs Output Power PD PD5515S Gp (db) 16 Nd (%) MHz 9 MHz MHz MHz MHz 9 MHz Pout (W) Vdd = 12.5V Idq = 15mA Pout (W) Vdd = 12.5V Idq = 15mA Input Return Loss vs Output Power Rl (db) - 9 MHz 915 MHz 876 MHz -2-3 Vdd = 12.5V Idq = 15mA Pout (W) 7/18

8 TEST CIRCUIT SCHEMATIC TEST CIRCUIT COMPONENT PART LIST COMPONENT DESCRIPTION B1,B2 FERRITE BEAD - Fair-rite Corp # C1,C12 3 pf, mil CHIP CAPACITOR C2,C3,C4,C11,C12,C13 1 to 2 pf TRIMMER CAPACITOR C6, C18 12 pf mil CHIP CAPACITOR C9, C15 µf, 5 V ELECTROLYTIC CAPACITOR C8, C16.1 mf, mil CHIP CAP C7, C17 1. pf mil CHIP CAP C5, C 33 pf, mil CHIP CAP L1 56 nh, 6 TURNS, 18 AWG MAGNET WIRE, Id =.14" HAND WOUND CHOKE N1, N2 TYPE N FLANGE MOUNT R1 15 Ω, 1 W CHIP RESISTOR R2 1 KΩ, 1 W CHIP RESISTOR R3 33 KΩ, 1 W CHIP RESISTOR Z1.471 X.8 MICROSTRIP Z X.8 MICROSTRIP Z3.372 X.8 MICROSTRIP Z4,Z5.26 X.223 MICROSTRIP Z6.5 X.8 MICROSTRIP Z7.551 X.8 MICROSTRIP Z8.825 X.8 MICROSTRIP Z9.489 X.8 MICROSTRIP BOARD ROGER, ULTRA LAM 2 THK.3, εr = oz. ED cu 2 SIDES. 8/18

9 TEST CIRCUIT TEST CIRCUIT PHOTOMASTER 4 inches 6.4 inches 9/18

10 COMMON SOURCE S-PARAMETER (PD5515S) (V DS = 12.5V I DS = 225mA) FREQ IS 11I S 11 Φ IS 21I S 21 Φ IS 12I S 12 Φ IS 22I S 22 Φ (MHz) /18

11 COMMON SOURCE S-PARAMETER (PD5515S) (V DS = 12.5V I DS = 1.2A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18

12 COMMON SOURCE S-PARAMETER (PD5515S) (V DS = 12.5V I DS = 2.25A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18

13 COMMON SOURCE S-PARAMETER (PD5515) (V DS = 12.5V I DS = 225mA) FREQ IS 11I S 11 Φ IS 21I S 21 Φ IS 12I S 12 Φ IS 22I S 22 Φ (MHz) /18

14 COMMON SOURCE S-PARAMETER (PD5515) (V DS = 12.5V I DS = 1.2A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18

15 COMMON SOURCE S-PARAMETER (PD5515) (V DS = 12.5V I DS = 2.25A) FREQ IS 11 I S 11 Φ IS 21 I S 21 Φ IS 12 I S 12 Φ IS 22 I S 22 Φ (MHz) /18

16 PowerSO-RF Formed Lead (Gull Wing) MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A A A A a.2.7 b c D D E E E E F.5.19 G L R R T 2 deg 5 deg 8 deg 2 deg 5 deg 8 deg T1 6 deg 6 deg T2 deg deg Note (1): Resin protrusions not included (max value:.15 mm per side) CRITICAL DIMENSIONS: - Stand-off (A1) - Overall width (L) 16/18

17 PowerSO-RF Straight Lead MECHANICAL DATA DIM. mm Inch MIN. TYP. MAX MIN. TYP. MAX A A A A a.2.7 b c D D E E E E F.5.19 G R R T1 6 deg 6 deg T2 deg deg Note (1): Resin protrusions not included (max value:.15 mm per side) CRITICAL DIMENSIONS: - Overall width (L) 17/18

18 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics 23 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 18/18

PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY

PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PD55 PD55S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION P OUT = W with 17 db gain @ /.5V NEW RF PLASTIC