SD2900. RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs
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1 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs GOLD METALLIZATION COMMON SOURCE CONFIGURATION 2-5 MHz 5 WATTS 28 VOLTS 13.5 db MIN. AT 4 MHz CLASS A OR AB OPERATION EXCELLENT THERMAL STABILITY DESCRIPTION The is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 28 V DC large signal applications up to 5 MHz M113 epoxy sealed ORDER CODE BRANDING PIN CONNECTION 1. Drain 3.Gate 2. Source 4. Source ABSOLUTE MAXIMUM RATINGS (T case = 25 o C) Symbol Parameter Value Unit V(BR)DSS Drain Source Voltage 65 V V DGR Drain-Gate Voltage (R GS = 1MΩ) 65 V VGS Gate-Source Voltage ±2 V I D Drain Current 9 ma PDISS Power Dissipation 21.9 W T j Max. Operating Junction Temperature 2 TSTG Storage Temperature -65 to 15 o C o C THERMAL DATA R th(j-c) R th(c-s) Junction-Case Thermal Resistance Case-Heatsink Thermal Resistance 8..3 * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 34 or equivalent). o C/W o C/W November /8
2 ELECTRICAL SPECIFICATION (Tcase = 25 o C) STATIC Symbol Parameter Min. Typ. Max. Unit V (BR)DSS V GS = V I DS = 5 ma 65 V I DSS V GS = V V DS = 28 V.5 ma I GSS V GS = 2V V DS = V 1. µa V GS(Q) V DS = 1V I D = 1 ma V V DS(ON) V GS = 1V I D =.5 A 1.6 V g FS V DS = 1V I D =.5 A.2 mho C ISS V GS = V V DS = 28 V f = 1 MHz 8.5 pf C OSS V GS = V V DS = 28 V f = 1 MHz 7.8 pf C RSS V GS = V V DS = 28 V f = 1 MHz 1.4 pf REF I DYNAMIC Symbol Parameter Min. Typ. Max. Unit P OUT V DD = 28 V I DQ = 5 ma 5 W G PS V DD = 28 V P out = 5 W I DQ = 5 ma db η D V DD = 28 V P out = 5 W I DQ = 5 ma 45 5 % Load Mismatch V DD = 28 V P out = 5 W I DQ = 5 ma All Angles 3:1 VSWR IMPEDANCE DATA FREQ. ZIN (Ω) ZDL (Ω) 4 MHz j j 27. 2/8
3 TYPICAL PERFORMANCE Capacitance vs Drain-Source Voltage Maximum Thermal Resistance vs Case Temperature 1 GC GC8314 C, CAPACITANCES (pf) 1 f = 1 MHz Ciss Coss RTH(j-c) (ºC/W) Crss VDS. DRAIN-SOURCE VOLTAGE (VOLTS) Tc, CASE TEMPERATURE (ºC) Drain Current vs Gate Voltage Gate-Source Voltages vs Case Temperature ID, DRAIN CURRENT (ma) VDS = 1V T = 25 C GC8315 T = -2 C T = 8 C VGS, GATE-SOURCE VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (NORMALIZED) VDD = 1V ID = 1 ma GC8316 ID = 75 ma ID = 5 ma ID = 2 ma ID = 5 ma Tc, CASE TEMPERATURE (ºC) 3/8
4 TYPICAL PERFORMANCE Output Power vs Input Power Output Power vs Input Power 8 GC GC Tc= 25 C Vdd = 13.5 V Vdd = 28 V VDD = 28 V T = 25º C T = -2ºC T = 8ºC Pin, INPUT POWER (mw) Pin, INPUT POWER (W) Output Power vs Voltage Supply Output Power vs Gate Voltage 8 GC GC832 Pout, OUTPUT POWER (WATTS) Pin =.24 W Pin =.12 W Pin =.6 W 4 2 VDD = 28 V Pin = Constant T = 25 C T = -2 C T = 8 C VDD, SUPPLY VOLTAGE (VOLTS) VGS, GATE-SOURCE VOLTAGE (VOLTS) Power Gain vs Output Power Efficiency vs Output Power 18 GC GC PG, POWER GAIN (db) Tc = 25 C IDQ = 5 m A EFFICIENCY (%) Tc= 25 C /8
5 4 MHz Test Circuit Schematic 4 MHz Test Circuit Component Part List 5/8
6 4 MHz Test Circuit Photomaster REF C Production Test Fixture 6/8
7 M113 (.38 DIA 4/L N/HERM W/FLG) MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F G H I J K Controlling Dimension: Inches 11936D 7/8
8 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1999 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8
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