BYT08P-400 BYT08PI-400
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- Gervais Mosley
- 5 years ago
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1 BY8P-4 BY8PI-4 FS RECOVERY RECIFIER DIODES MIN PRODUC CHRCERISICS IF(V) 8 VRRM 4 V VF (max) 1.4 V trr (max) FEURES ND BENEFIS 35 ns K K VERY LOW REVERSE RECOVERY IME VERY LOW SWICHING LOSSES LOW NOISE URN-OFF SWICHING INSULED PCKGE: O-22C Insulation voltage: 25 VRMS Capacitance = 7 pf -22C (Plastic) Insulated O-22C (Plastic) DESCRIPION his single rectifier is suited for Switch Mode Power Supplies and other power converters. his device is intended to free-wheeling function in converters and motor control circuits. BSOLUE RINGS (limiting values) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 4 V IFRM Repetitive peak forward current tp=5 µs F=5kHz 2 IF(RMS) RMS forward current 16 IF(V) verage forward current O-22C c = 12 C δ =.5 8 Insulated O-22C c = 15 C IFSM Surge non repetitive forward current tp = 1 ms Sinusoidal 1 stg Storage temperature range - 4 to + 15 C j Maximum operating junction temperature 15 C October Ed: 3 1/7
2 BY8P-4 / BY8PI-4 HERML RESISNCES Symbol Parameter Value Unit Rth (j-c) Junction to case O-22C 2.5 C/W Ins. O-22C 3.5 SIC ELECRICL CHRCERISICS Symbol Parameter est Conditions Min. yp. Max. Unit VF * Forward voltage drop j = 25 C IF = V j = 1 C 1.4 IR ** Reverse leakage current Pulse test : * tp = 38 µs, δ < 2% ** tp = 5 ms, δ < 2% o evaluate the conduction losses use the following equation: P = 1.1 x IF(V) +.24 IF 2 (RMS) j = 25 C VR = VRRM 15 µ j = 1 C 2.5 m RECOVERY CHRCERISICS Symbol est Conditions Min. yp. Max. Unit trr j = 25 C IF = 1 VR = 3V dif/dt = - 15/µs 75 ns IF =.5 IR = 1 Irr = URN-OFF SWICHING CHRCERISICS Symbol Parameter est Conditions Min. yp. Max. Unit tirm Maximum reverse dif/dt = - 32 /µs VCC = 2 V 75 ns recovery time dif/dt = - 64 /µs IF = 8 5 Lp.5 µh IRM Maximum reverse dif/dt = - 32 /µs 2.2 j = 1 C recovery current dif/dt = - 64 /µs (see fig. 13) 2.8 C = V RP urn-off overvoltage j = 1 C VCC = 6V IF = IF(V) 3.3 / coefficient dif/dt = - 3/µs Lp = 1µH V CC 2/7
3 BY8P-4 / BY8PI-4 Fig. 1: verage forward power dissipation versus average forward current. Fig. 2: Peak current versus form factor. PF(av)(W) δ =.2 δ =.5 δ =.1 δ =.5 δ = 1 2 IF(av) () δ=tp/ tp IM() 1 9 P=5W 8 7 δ=tp/ tp P=1W 2 P=2W 1 δ Fig. 3: verage forward current versus ambient temperature (δ=.5). IF(av)() 1 9 Rth(j-a)=Rth(j-c) Non insulated 8 7 Insulated 6 Rth(j-a)=15 C/W δ=tp/ tp amb( C) Fig. 4-1: Non repetitive surge peak forward current versus overload duration (O-22C). Fig. 4-2: Non repetitive surge peak forward current versus overload duration (insulated O-22C) IM() IM t δ=.5 c=25 C c=5 C c=75 C t(s) 1E-3 1E-2 1E-1 1E IM() IM c=5 C c=75 C c=25 C t 1 δ=.5 t(s) 1E-3 1E-2 1E-1 1E+ 3/7
4 BY8P-4 / BY8PI-4 Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration. Fig. 6: Forward voltage drop versus forward current (maximum values, per diode). 1. K=[Zth(j-c)/Rth(j-c)] 1. IFM() ypical values j=1 C.5 δ =.5 1. δ =.2.2 δ =.1 Single pulse 1. j=25 C j=1 C tp(s) δ=tp/ tp.1 1E-3 1E-2 1E-1 1E+ VFM(V) Fig. 7: Junction capacitance versus reverse voltage applied (typical values, per diode). Fig. 8: Recovery charges versus dif/dt (per diode) C(pF) VR(V) F=1MHz j=25 C Qrr(nC) 9% confidence j=1 C Fig. 9: Recovery current versus dif/dt (per diode). Fig. 1: ransient peak forward voltage versus dif/dt (per diode) IRM() 9% confidence j=1 C VFP(V) 9% confidence j=1 C /7
5 BY8P-4 / BY8PI-4 Fig. 11: Forward recovery time versus dif/dt (per diode) Fig. 12: Dynamic parameters versus junction temperature tfr(µs) 9% confidence j=1 C Qrr;IRM[j] / Qrr;IRM[j=1 C] IRM.5 Qrr j( C) Fig. 13: urn-off switching characteristics (without series inductance). Fig. 14: urn-off switching characteristics (with series inductance). 5/7
6 BY8P-4 / BY8PI-4 PCKGE MECHNICL D O-22C DIMENSIONS REF. Millimeters Inches L2 F H2 G L5 Ø I L9 F1 L6 L4 C D M E L7 Min. Max. Min. Max C D E F F G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam. I /7
7 BY8P-4 / BY8PI-4 PCKGE MECHNICL D O-22C Insulated I B L b2 C REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max. a2 l2 b1 F a1 c a a B b b C c c e F I L l e c2 Ordering type Marking Package Weight Base qty Delivery mode BY8P-4 BY8P-4 O-22C 1.86 g. 5 ube BY8PI-4 BY8PI-4 Insulated O-22C 1.86 g. 5 ube Cooling method: by conduction (C) Recommended torque value:.8 N.m. Maximum torque value: 1. N.m. Epoxy meets UL94,V Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 1999 SMicroelectronics - Printed in Italy - ll rights reserved. SMicroelectronics GROUP OF COMPNIES ustralia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.. 7/7
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Obsolete Product(s) - Obsolete Product(s)
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
STPS5L60. Power Schottky rectifier. Features. Description
STPS5L6 Power Schottky rectifier Features Negligible switching losses Low forward voltage drop for higher efficiency Low thermal resistance Avalanche capability specified Description K A K A Power Schottky
STPS30L30C. Low drop power Schottky rectifier. Features. Description
Low drop power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low forward voltage drop Low thermal resistance Avalanche capability specified
Obsolete Product(s) - Obsolete Product(s)
STTA112U TURBOSWTCH ULTRA-FAST HGH VOLTAGE DODE MAN PRODUCT CHARACTERSTCS F(AV) VRRM trr (typ) 1A 1200V 65ns FEATURES AND BENEFTS SPECFC TO THE FOLLOWNG OPERATONS: SNUBBNG OR CLAMPNG, DEMAGNETZATON AND
STPS140Z-Y. Automotive power Schottky rectifier. Features. Description
Automotive power Schottky rectifier Datasheet production data Features Very small conduction losses Negligible switching losses Extremely fast switching ECOPACK 2 compliant component AEC-Q101 qualified
STPS3L40. Power Schottky rectifier. Main product characteristics A. Features and Benefits. Description. Order codes SMC STPS3L40S
Power Schottky rectifier Main product characteristics A I F(AV) V RRM T j (max) V F (max) 3 A 4 V 15 C.44 V K SMC S Features and Benefits Negligible switching losses Low thermal resistance Low forward
Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 100 V I F(RMS) RMS forward current 10 A
High voltage power Schottky rectifier Main product characteristics I F(AV) V RRM T j (max) V F (max) Features and Benefits Negligible switching losses Low leakage current Good trade off between leakage
STTH60W03C. Turbo 2 ultrafast high voltage rectifier. Features. Description
STTH6W3C Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant
STPS1045B-Y. Automotive power Schottky rectifier. Features. Description
STPS45B-Y Automotive power Schottky rectifier Features Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability Avalanche specification AEC-Q qualified
STTH120L06TV. Turbo 2 ultrafast high voltage rectifier
Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features A1 A2 A1 K1 Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated
STPSC V power Schottky silicon carbide diode. Features. Description
600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC
Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
(N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The (N) Family of Silicon Controlled Rectifiers
STPS30L30DJF. High efficiency power Schottky diode. Features. Description
STPS3L3DJF High efficiency power Schottky diode Datasheet production data Features Low forward voltage drop Very small conduction losses Negligible switching losses valanche rated Extremely fast switching
STTH15RQ06-Y. Automotive turbo 2 ultrafast high voltage rectifier
Automotive turbo 2 ultrafast high voltage rectifier Datasheet - production data K K D²PAK K A A NC Description The STTH15RQ06-Y has been developed to be used in application requiring a high-voltage secondary
STPS3045C-Y. Automotive power Schottky rectifier. Features. Description
STPS345C-Y Automotive power Schottky rectifier Features Very small conduction losses Negligible switching losses Extremely fast switching Low thermal resistance Avalanche rated AEC-Q qualified Description
Symbol Parameter Value Unit BTW 68 BTW 68 N BTW 68 BTW 68 N. Storage and operating junction temperature range - 40 to to + 125
BTW 68 (N) SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY BTW 68 Serie : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The BTW 68 (N) Family of Silicon
STPS3150. Power Schottky rectifier. Features. Description
STPS315 Power Schottky rectifier Features Negligible switching losses Low forward voltage drop for higher efficiency and extented battery life Low thermal resistance ECOPACK 2 compliant component K A STPS315U
t p = 10 ms T j initial = T amb
P6KE TRANSIL FEATURES Peak pulse power: 600 W (/0 µs ) Stand-off voltage range 6.8 to 440V Unidirectional and Bidirectional types Low clamping factor Fast response time UL recognized DESCRIPTION Transil
FERD15S50. Field effect rectifier. Features. Description
Field effect rectifier Datasheet production data K Table 1. Device summary Symbol Value I F(AV) 15 A V RRM 50 V T j (max) +150 C V F (typ) A K PowerFLAT 5x6 FERD15S50DJF A 0.30 V Features ST proprietary
STPS2L60-Y. Automotive power Schottky rectifier. Features. Description
Automotive power Schottky rectifier Features AEC-Q qualified Negligible switching losses Low forward voltage drop Surface mount miniature package Avalanche capability specified ECOPACK 2 compliant component
STTH20003TV. Ultrafast high voltage rectifier. Mian product characteristics. Features and benefits. Description. Order codes
Ultrafast high voltage rectifier Mian product characteristics I F(AV) up to 2 x 1 A V RRM 3 V A1 K1 T j (max) 15 C A2 K2 V F (typ).95 V K1 t rr (max) 9 ns A1 Features and benefits K2 Combines highest recovery
STPS200170TV1. High voltage power Schottky rectifier
High voltage power Schottky rectifier Datasheet - production data A1 A2 A2 K1 K2 K2 Description This high voltage Schottky rectifier is suited for high frequency switch mode power supplies. Packaged in
STPS1L20MF. Low drop power Schottky rectifier in flat package. Features. Description
Low drop power Schottky rectifier in flat package Features Very low profile package: 5 mm Backward compatible with standard STmite footprint Very small conduction losses Negligible switching losses Extremely
STTH6003. High frequency secondary rectifier
High frequency secondary rectifier Datasheet - production data Features A1 A2 TO-247 Combines highest recovery and voltage performance Ultrafast, soft and noise-free recovery Low inductance and low capacitance
STTH60AC06C. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Features Datasheet production data A1 A2 K Ultrafast switching Low reverse recovery current Reduces switching and conduction losses Low thermal resistance Insulated
STPS61L45C. Power Schottky rectifier. Features. Description
Power Schottky rectifier Features High current capability Avalanche rated Low forward voltage drop current High frequency operation K A1 A2 K Description Dual center tap Schottky rectifier suited for high
STPSC V power Schottky silicon carbide diode. Features. Description
6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description The SiC diode is an ultrahigh
BAT48 Series. Small signal Schottky diodes. Main product characteristics. Features and benefits. Order codes. Description. BAT48ZFILM (Single) SOD-123
Small signal Schottky diodes Main product characteristics I F V RRM C (typ) T j (max) 350 ma 40 V 18 pf 150 C SOD-123 BAT48ZFILM (Single) Features and benefits Low leakage current losses Negligible switching
STPS2L30. Low drop power Schottky rectifier. Features. Description
STPS2L3 Low drop power Schottky rectifier Features Low cost device with low drop forward voltage for less power dissipation Optimized conduction/reverse losses trade-off which lead to the highest yield
STTH1210-Y. Automotive ultrafast recovery - high voltage diode. Features. Description
Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q1 qualified Ultrafast, soft recovery Very low conduction and switching losses High frequency and high pulsed current
Symbol Parameter Value Unit BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67 BTW 66 BTW 67
SCR FETURES HIGH SURGE CPBILITY HIGH ON-STTE CURRENT. HIGH STBILITY ND RELIBILITY ISOLTED PCKGE : INSULTED VOLTGE = 2500V (RMS) (UL RECOGNIZED : E81734) DESCRIPTION The and Family Silicon Controlled Rectifiers
STTH30W03C. Turbo 2 ultrafast high voltage rectifier. Features. Description
Turbo 2 ultrafast high voltage rectifier Datasheet production data Features Ultrafast switching Low reverse recovery current Low thermal resistance Reduces switching losses ECOPACK 2 compliant component
STTH2002C. High efficiency ultrafast diode. Features. Description
High efficiency ultrafast diode Datasheet - production data K TO-220AB K A1 A1 A2 A1 K A2 K A2 I 2 PAK D 2 PAK K K A1 A2 A1 K TO-220FPAB A1 KA2 A2 Features Suited for SMPS Low losses Low forward and reverse
STTH6112TV. Ultrafast recovery V diode. Main product characteristics. Features and benefits. Order codes. Description STTH6112TV2 STTH6112TV1
Ultrafast recovery - 12 V diode Main product characteristics I F(AV) 2 x 3 A K2 A2 A2 K1 V RRM 12 V T j 15 C V F (typ) t rr (typ) 1.3 V 45 ns K1 A1 STTH6112TV1 K2 A1 STTH6112TV2 Features and benefits A1
STPS40170C-Y. Automotive high voltage power Schottky rectifier. Features. Description
STPS47C-Y Automotive high voltage power Schottky rectifier Features High junction temperature capability Low leakage current Good trade off between leakage current and forward voltage drop Low thermal
STPS745. Power Schottky rectifier. Main product characteristics. Features and Benefits. Description. Very small conduction losses
Power Schottky rectifier Main product characteristics K I F(V) V RRM 7.5 45 V K T j (max) 5 C V F (max) Features and Benefits Very small conduction losses.57 V NC D 2 PK STPS745G Negligible switching losses
STPS10150CG. High voltage power Schottky rectifier. Main product characteristics. Features and benefits. Description. Order Codes
STPS15C High voltage power Schottky rectifier Main product characteristics I F(AV) V RRM T j V F (max) Features and benefits HIgh junction temperature capability Good trade off between leakage current