Obsolete Product(s) - Obsolete Product(s)

Transcription

1 STTA112U TURBOSWTCH ULTRA-FAST HGH VOLTAGE DODE MAN PRODUCT CHARACTERSTCS F(AV) VRRM trr (typ) 1A 1200V 65ns FEATURES AND BENEFTS SPECFC TO THE FOLLOWNG OPERATONS: SNUBBNG OR CLAMPNG, DEMAGNETZATON AND RECTFCATON ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES N BOTH THE DODE AND THE COMPANON TRANSSTOR HGH FREQUENCY OPERATON HGH REVERSE VOLTAGE CAPABLTY DESCRPTON VF (max) 1.5V TURBOSWTCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching GBT or MOSFET in all freewheel mode operations. ABSOLUTE RATNGS (limiting values) They are particularly suitable in motor control circuitries, or in primary of SMPS as snubber, clamping or demagnetizing diodes. They are also suitable for the secondary of SMPS as high voltage rectifier diodes. Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 1200 V SMB F(RMS) RMS forward current 6 A FRM Repetitive peak forward current tp = 5 µs F = 5kHz square 10 A FSM Surge non repetitive forward current tp = 10ms sinusoidal 20 A Tstg Storage temperature range - 65 to C Tj Maximum operating junction temperature 125 C TURBOSWTCH is a trademark of STMicroelectronics November Ed: 5A 1/8

2 THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit Rth(j-) Junction to lead thermal resistance 23 C/W P1 Conduction power dissipation F(AV) = 0.8A δ = W Tlead= 93 C Pmax Total power dissipation Tlead= 90 C 1.5 W Pmax = P1 + P3 (P3 = 10% P1) STATC ELECTRCAL CHARACTERSTCS Symbol Parameter Test conditions Min Typ Max Unit VF * Forward voltage drop F = 1A Tj = 25 C Tj = 125 C 1.1 R ** Reverse leakage current VR = 0.8 x Tj = 25 C Tj = 125 C µa VRRM 300 Vto Threshold voltage p < 3.F(AV) Tj = 125 C 1.15 V Rd Dynamic resistance 350 mω Test pulses : * tp = 380 µs, δ < 2% ** tp = 5 ms, δ < 2% To evaluate the maximum conduction losses use the following equation : P = Vto x F(AV) + Rd x F 2 (RMS) DYNAMC ELECTRCAL CHARACTERSTCS TURN-OFF SWTCHNG Symbol Parameter Test conditions Min Typ Max Unit trr Reverse recovery Tj = 25 C ns time F = 0.5 A R = 1A rr = 0.25A 65 F = 1 A df/dt =-50A/µs VR = 30V 115 RM Maximum recovery current Tj = 125 C VR = 600V F = 1A df/dt = -8 A/µs df/dt = -50 A/µs 5 S factor Softness factor Tj = 125 C VR = 600V F =1A df/dt = -50 A/µs 0.7 TURN-ON SWTCHNG V A - Symbol Parameter Test conditions Min Typ Max Unit tfr Forward recovery time Tj = 25 C 900 ns VFp Peak forward voltage F = 1 A, df/dt = 8 A/µs measured at 1.1 VF max 35 V 2/8

3 Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current (Maximum values). P1(W) δ = 0.1 δ = 0.2 δ = 0.5 δ = FM(A) F(av) (A) VFM(V) Fig. 3: Relative variation of thermal transient impedance junction to lead versus pulse duration. Fig. 5: Reverse recovery time versus df/dt (90% confidence). trr(ns) 300 Fig. 4: Peak reverse recovery current versus df/dt (90% confidence). RM(A) df/dt(a/µs) F=2*F(av) VR=600V S factor F=2*F(av) F<2*F(av) VR=600V Fig. 6: Softness factor (tb/ta) versus df/dt (Typical values). VR=600V df/dt(a/µs) df/dt(a/µs) /8

4 Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference ). Fig. 8: Transient peak forward voltage versus df/dt (90% confidence) S factor Tj( C) RM VFP(V) 80 F=2*F(av) df/dt(a/µs) Fig. 9: Forward recovery time versus df/dt (90% confidence) tfr(ns) F=2*F(av) VFR=1.1*VF max. 300 df/dt(a/µs) /8

5 APPLCATON DATA The 1200V TURBOSWTCH TM series has been designed to provide the lowest overall power losses in all frequency or high pulsed current operations. n such application (fig. A to D), the way of calculating the power losses is given below : TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTON LOSSES in the diode Fig. A : "FREEWHEEL MODE". V R REVERSE LOSSES in the diode SWTCHNG TRANSSTOR SWTCHNG LOSSES in the diode DODE: TURBOSWTCH SWTCHNG LOSSES in the diode due to the diode tp T L F=1/T δ= tp/t LOAD 5/8

6 APPLCATON DATA (Cont d) Fig. B : SNUBBER DODE. Fig. C : DEMAGNETZNG DODE. PWM tp T F=1/T δ= tp/t Fig. D : RECTFER DODE. Fig. E : STATC CHARACTERSTCS. VR F Rd Conduction losses : P1 = Vto x F(AV) + Rd x F 2 (RMS) Reverse losses : V P2 = VR x R x (1 - δ) Vto V F R 6/8

7 APPLCATON DATA (Cont d) Fig. F : TURN-OFF CHARACTERSTCS. V L TRANSSTOR t Turn-on losses : (in the transistor, due to the diode) P5 = V R RM 2 (3+2 S) F 6 x d F dt + V R RM L (S + 2) F 2 df dt STTA112U V V Fig. G : TURN-ON CHARACTERSTCS. F 0 V Fp d F/dt RM d F /dt V F d F /dt = V R /L RM trr = ta + tb S=tb/ta ta ta tb trr = ta + tb tb d R/dt d R/dt DODE S = tb / ta RECTFER OPERATON Fmax V R t t VR t Turn-off losses : P3 = V R RM 2 S F 6 x d F dt Turn-off losses : with non negligible serial inductance P3 = VR RM 2 S F + L RM 2 F 6 x d F dt 2 P3, P3 and P5 are suitable for power MOSFET and GBT Turn-on losses : P4 = 0.4 (VFP - VF) x Fmax x tfr x F 1.1V F V F 0 t tfr 7/8

8 PACKAGE MECHANCAL DATA SMB C E1 E FOOTPRNT DMENSONS (in millimeters) L D 1.52 A1 A2 2.3 b REF. Millimeters DMENSONS nches Min. Max. Min. Max. A A b c E E D L Ordering type Marking Package Weight Base qty Delivery mode STTA112U T03 SMB 0.107g 2500 Tape & reel Epoxy meets UL94,V0 Band indicates cathode nformation furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in taly - All rights reserved. STMicroelectronics GROUP OF COMPANES Australia - Brazil - China - Finland - France - Germany - Hong Kong - ndia - taly - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8