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1 STT126D/DI/G TURBOSWITCH ULTR-FST HIGH OLTGE DIODE MIN PRODUCT CHRCTERISTICS I F() RRM 12 6 t rr (typ) 28ns F (max) 1.5 FETURES ND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERTIONS: FREEWHEEL OR BOOSTER DIODE. ULTR-FST ND SOFT RECOERY. ERY LOW OERLL POWER LOSSES IN BOTH THE DIODE ND THE COMPNION TRNSISTOR. HIGH FREQUENCY OPERTIONS. INSULTED PCGE : TO-22C Electrical insulation : 25 RMS Capacitance < 7 pf DESCRIPTION TURBOSWITCH, family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particularly suitable and efficient in motor control freewheel applications and in booster BSOLUTE RTINGS (limiting values) diode applications in power factor control circuitries. Packaged in TO-22C, isolated TO-22C and D 2 P, these 6 devices are particularly intended for use on 24 domestic mains. Symbol Parameter alue Unit RRM Repetitive peak reverse voltage 6 RSM Non repetitive peak reverse voltage 6 I F(RMS) RMS forward current TO-22C / D2P 3 TO-22C ins. 2 I FRM Repetitive peak TO-22C/D2P tp=5µs F=5kHz 16 forward current TO-22C ins. square 12 I FSM Surge non repetitive forward current tp=1 ms sinusoidal 11 T j Maximum operating junction temperature 15 C T stg Storage temperature range -65 to 15 C TM : TURBOSWITCH is a trademark of STMicroelectronics TO-22C STT126D NC D 2 P STT126G Insulated TO-22C STT126DI May 22 - Ed: 5B 1/9

2 THERML ND POWER DT Symbol Parameter Test conditions alue Unit R th(j-c) P 1 P max Junction to case thermal resistance Conduction power dissipation I F() = 12 δ =.5 Total power dissipation Pmax=P1+P3 (P3 = 1% P1) TO-22C / D 2 P TO-22C ins. TO-22C / D 2 P TO-22C ins. TO-22C /D 2 P TO-22C ins. Tc= 18 C Tc= 84 C Tc= 14 C Tc= 78 C C/W 22 W 24 W STTIC ELECTRICL CHRCTERISTICS Symbol Parameter Test conditions Min Typ Max Unit F* Forward voltage drop I F =12 Tj = 25 C Tj = 125 C 1.25 I R** Reverse leakage current R =.8 x Tj = 25 C RRM Tj = 125 C µ m to Threshold voltage Ip < 3.I Tj = 125 C 1.15 rd Dynamic resistance 29 mω Test pulse : *tp=38µs, δ cycle < 2% ** tp = 5 ms, δ cycle < 2% To evaluate the maximum conduction losses use the following equation : P= to xi F() +rdxi 2 F (RMS) DYNMIC ELECTRICL CHRCTERISTICS TURN-OFF SWITCHING Symbol Parameter Test conditions Min Typ Max Unit t rr Reverse recovery Tj = 25 C ns time I F =.5 I R = 1 Irr = I F =1 di F /dt =-5/µs R =3 55 I RM Maximum reverse recovery current Tj = 125 C R = 4 I F =12 di F /dt = -96 /µs di F /dt = -5 /µs 16 S factor Softness factor Tj = 125 C R = 4 I F =12 di F /dt = -5 /µs.45 TURN-ON SWITCHING Symbol Parameter Test conditions Min Typ Max Unit t fr Forward recovery time Tj = 25 C I F =12, di F /dt=96/µs measured at, 1.1 F max Fp Peak forward voltage Tj = 25 C I F =12, di F /dt=96/µs 1 5 ns 2/9

3 Fig. 1: Conduction losses versus average current. P1(W) δ =.1 δ =.2 δ =.5 δ = 1 IF(av)() δ=tp/t tp Fig. 3: Relative variation of thermal transient impedance junction to case versus pulse duration Zth(j-c) (tp. δ) = Rth(j-c) δ =.5 δ =.2 δ =.1 Single pulse tp(s) δ=tp/t tp 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Fig. 5: Reverse recovery time versus di F /dt. trr(ns) % CONFIDENCE Tj=125 C 18 R= IF=24 1 IF= IF=6 2 dif/dt(/µs) T T Fig. 2: Forward voltage drop versus forward current..25 IFM() FM() MXIMUM LUES Tj=125 C Fig. 4: Peak reverse recovery current versus di F /dt. 4. IRM() % CONFIDENCE Tj=12 C R= IF= IF= IF= dif/dt(/µs) Fig. 6: Softness factor (tb/ta) versus di F /dt. 1.2 S factor Typical values Tj=125 C IF<2xIF(av) R=4.1 dif/dt(/µs) /9

4 Fig. 7: Relative variation of dynamic parameters versus junction temperature (Reference Tj=125 C). Fig. 8: Transient peak forward voltage versus di F /dt IRM S factor Tj( C) Fig. 9: Forward recovery time versus di F /dt. 5 tfr(ns) 9% CONFIDENCE Tj=125 C Fr=1.1*F max. IF=IF(av) 5 dif/dt(/µs) FP() % CONFIDENCE Tj=125 C 13 IF=IF(av) dif/dt(/µs) /9

5 PPLICTION DT The TURBOSWITCH is especially designed to provide the lowest overall power losses in any FREEWHEEL Mode application (Fig.) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below: TOTL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5 Watts CONDUCTION LOSSES in the diode Fig. : FREEWHEEL MODE. R REERSE LOSSES in the diode SWITCHING TRNSISTOR SWITCHING LOSSES in the diode DIODE: TURBOSWITCH SWITCHING LOSSES in the tansistor due to the diode t T IL F=1/T =t/t LOD 5/9

6 PPLICTION DT (Cont d) Fig. B: STTIC CHRCTERISTICS I Conduction losses : P1= t.i F() +R d.i F 2 (RMS) I F Rd R I R to F Reverse losses : P2= R.I R.(1-δ) Fig. C: TURN-OFF CHRCTERISTICS I I di F/dt I RM ta tb trr = ta + tb IL TRNSISTOR di R/dt DIODE S = tb / ta Fig. D: TURN-ON CHRCTERISTICS I F t t R Turn-on losses : (in the transistor, due to the diode) P5 = I S F R 2 ( ) RM 6 xdif dt R IRM IL ( S + 2 ) F + 2 xdi dt Turn-off losses (in the diode) : P3 = I S F R 2 RM 6 xdi dt P3 and P5 are suitable for power MOSFET and IGBT Fp di F /dt F I Fmax t Turn-on losses : P4 =.4 ( FP - F ).I Fmax.t fr.f F F 1.1 F F t tfr 6/9

7 PCGE DT D2P E C2 L2 D L L3 1 B2 C R B G 2 M * 2 * FLT ZONE NO LESS THN 2mm FOOTPRINT DIMENSIONS (in millimeters) DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max B B C C D E G L L L M R.4 typ..16 typ /9

8 PCGE DT TO-22C (JEDEC outline) H2 C L5 L7 Ø I L6 L2 D L9 F1 L4 M F E G Cooling method : by conduction (C) Recommanded maximum torque value :.7m.N DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max C D E F F G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam. I /9

9 PCGE DT INSULTED TO-22C (JEDEC outline) l4 b1 B e Cooling method : by conduction (C). Recommended maximum torque value :1m.N I l2 a1 L a2 b2 c2 M C c1 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max a a B b b C c c e F I I L l M Ordering type Marking Package Weight Base qty Delivery mode STT126D STT126D TO-22C 1.86g 5 Tube STT126DI STT126DI TO-22C Ins. 1.86g 25 Bulk STT126G STT126G D 2 P 1.48g 5 Tube STT126G-TR STT126G D 2 P 1.48g 5 Tape & reel Epoxy meets UL94, Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 22 STMicroelectronics - Printed in Italy - ll rights reserved. STMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - Finland - France - Germany Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United ingdom - United States. F 9/9