STPSC V power Schottky silicon carbide diode. Features. Description
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1 600 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC boost diode Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide bandgap material allows the design of a Schottky diode structure with a 600 V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. ST SiC diodes will boost the performance of PFC operations in hard switching conditions. K K TO-220C STPSC606D K NC D 2 PK STPSC606G Table 1. I F(V) V RRM Device summary V T j (max) 175 C Q C (typ) 6 nc September 2009 Doc ID Rev 1 1/8 8
2 Characteristics STPSC606 1 Characteristics Table 2. bsolute ratings (limiting values at 25 C unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 600 V I F(RMS) Forward rms current 18 I F(V) verage forward current T c = 125 C, δ = I FSM Surge non repetitive forward current t p = 10 ms sinusoidal, T c = 25 C t p = 10 ms sinusoidal, T c = 125 C t p = 10 µs square, T c = 25 C I FRM Repetitive peak forward current δ = 0.1, T c = 110 C, T j = 150 C 27 T stg Storage temperature range -55 to +175 C T j Operating junction temperature range -40 to +175 C Table 3. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case 2.8 C/W Table 4. Static electrical characteristics (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C V R = V RRM T j = 150 C µ V F (2) Forward voltage drop T j = 25 C I F = 6 T j = 150 C V 1. t p = 10 ms, δ < 2% 2. t p = 500 µs, δ < 2% To evaluate the conduction losses use the following equation: P = 1.20x I F(V) x I F 2 (RMS) Table 5. Other parameters Symbol Parameter Test conditions Typ. Unit Q c C Total capacitive charge Total capacitance V r = 400 V, I F = 6 di F /dt = -200 /µs T j = 150 C V r = 0 V, T c = 25 C, F = 1 Mhz 375 V r = 400 V, T c = 25 C, F = 1 Mhz 30 6 nc pf 2/8 Doc ID Rev 1
3 Characteristics Figure 1. Forward voltage drop versus forward current (typical values) Figure 2. Reverse leakage current versus reverse voltage applied (maximum values) 12 I FM () 1.E+04 I R (µ) 10 T j =25 C 1.E+03 T j =175 C 8 T j =150 C 1.E+02 T j =150 C 6 T j =175 C 4 1.E+01 2 V FM(V) 1.E+00 T j =25 C V R (V) E Figure 3. Peak forward current versus case temperature Figure 4. Junction capacitance versus reverse voltage applied (typical values) I M () δ=0.1 δ=tp/t T tp C(pF) F=1 MHz V OSC =30 mv RMS T j =25 C δ=0.3 δ= d=1 δ=1 d=0.7 δ=0.7 T C ( C) V R(V) Doc ID Rev 1 3/8
4 Characteristics STPSC606 Figure 5. Relative variation of thermal impedance junction to case versus pulse duration Figure 6. Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 Z th(j-c) /R th(j-c) 1.E+03 I FSM () E+02 1.E+01 T c =125 C T c=25 C 0.1 Single pulse t p (s) E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+00 t p (s) 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Figure 7. Total capacitive charges versus di F /dt (typical values) Q C (nc) I F =6 V R =400 V Tj=150 C di F /dt(/µs) /8 Doc ID Rev 1
5 Package information 2 Package information Epoxy meets UL94, V0 Cooling method: convection (C) Recommended torque: 0.4 to 0.6 N m In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Table 6. TO-220C dimensions Dimensions Ref. Millimeters Inches H2 Ø I C Min. Max. Min. Max C D L5 L7 E F L6 F L2 G F1 L9 D H L typ typ. F L4 M E L L L G L L M 2.6 typ typ. Diam. I Doc ID Rev 1 5/8
6 Package information STPSC606 Table 7. D 2 PK dimensions Dimensions Ref. Millimeters Inches Min. Max. Min. Max. L2 E C B L D B L3 B2 B 1 C R C C D G E G L M * V2 * FLT ZONE NO LESS THN 2mm L L M R 0.40 typ typ. V Figure 8. Footprint (dimensions in mm) /8 Doc ID Rev 1
7 Ordering information 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPSC606D STPSC606D TO-220C 1.86 g 50 Tube STPSC606G-TR STPSC606G D 2 PK 1.48 g 1000 Tape and reel 4 Revision history Table 9. Document revision history Date Revision Changes 24-Sep First issue. Doc ID Rev 1 7/8
8 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. ll ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS ND CONDITIONS OF SLE ST DISCLIMS NY EXPRESS OR IMPLIED WRRNTY WITH RESPECT TO THE USE ND/OR SLE OF ST PRODUCTS INCLUDING WITHOUT LIMITTION IMPLIED WRRNTIES OF MERCHNTBILITY, FITNESS FOR PRTICULR PURPOSE (ND THEIR EQUIVLENTS UNDER THE LWS OF NY JURISDICTION), OR INFRINGEMENT OF NY PTENT, COPYRIGHT OR OTHER INTELLECTUL PROPERTY RIGHT. UNLESS EXPRESSLY PPROVED IN WRITING BY N UTHORIZED ST REPRESENTTIVE, ST PRODUCTS RE NOT RECOMMENDED, UTHORIZED OR WRRNTED FOR USE IN MILITRY, IR CRFT, SPCE, LIFE SVING, OR LIFE SUSTINING PPLICTIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FILURE OR MLFUNCTION MY RESULT IN PERSONL INJURY, DETH, OR SEVERE PROPERTY OR ENVIRONMENTL DMGE. ST PRODUCTS WHICH RE NOT SPECIFIED S "UTOMOTIVE GRDE" MY ONLY BE USED IN UTOMOTIVE PPLICTIONS T USER S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners STMicroelectronics - ll rights reserved STMicroelectronics group of companies ustralia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of merica 8/8 Doc ID Rev 1
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