STPSC30H12C V power Schottky silicon carbide diode. Description. Features
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1 STPSC3H12C 12 V power Schottky silicon carbide diode Datasheet - production data Features A1 A2 No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating Tj from -4 C to 175 C ECOPACK 2 compliant K K A2 A1 TO-247 LL Description The SiC diode, available in TO-247 LL, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 12 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Symbol IF(AV) VRRM Table 1: Device summary Value 2 x 15 A 12 V Tj (max.) 175 C VF (typ.) 1.35 V February 217 DocID3339 Rev 1 1/9 This is information on a product in full production.
2 Characteristics STPSC3H12C 1 Characteristics Table 2: Absolute ratings (limiting values per diode at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -4 C to +175 C) 12 V IF(RMS) Forward rms current 38 A IF(AV) IFRM IFSM Average forward current Repetitive peak forward current Surge non repetitive forward current TC = 15 C DC current TC = 135 C DC current TC = 25 C DC current Per diode/per device 15/3 21/42 38/76 TC = 15 C,Tj = 175 C, δ =.1 61 A tp = 1 ms sinusoidal tp = 1 µs square TC = 25 C 15 TC = 15 C 9 TC = 25 C 63 Tstg Storage temperature range -65 to +175 C Tj Operating junction temperature range -4 to +175 C A A Table 3: Thermal resistance parameters Symbol Parameter Typ. value Max. value Unit Rth(j-c) Junction to case Per diode.5.7 Per device C/W Table 4: Static electrical characteristics (per diode) Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 1 ms, δ < 2% (2) Pulse test: tp = 5 µs, δ < 2% Tj = 25 C VR = VRRM Tj = 15 C Tj = 25 C IF = 15 A Tj = 15 C µa V To evaluate the conduction losses, use the following equation: P = 1.9 x IF(AV) x IF 2 (RMS) 2/9 DocID3339 Rev 1
3 STPSC3H12C Table 5: Dynamic electrical characteristics (per diode) Characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit QCj (1) Total capacitive charge VR = 8 V nc Cj Notes: Total capacitance (1) Most accurate value for the capacitive charge: Q cj (V R ) = C j (V)dV V R VR = V, Tc = 25 C, F = 1 MHz VR = 8 V, Tc = 25 C, F = 1 MHz pf DocID3339 Rev 1 3/9
4 Characteristics 1.1 Characteristics (curves) Figure 1: Forward voltage drop versus forward current (typical values, per diode) STPSC3H12C Figure 2: Reverse leakage current versus reverse voltage applied (typical values, per diode) 3 I F (A) Pulse test : t p = 5 µs 1.E+2 I R (µa) 25 1.E+1 2 T j = 15 C 15 T a = 25 C T a = 15 C 1.E+ T j = 25 C 1 1.E E-2 V F(V) V R (V) 1.E Figure 3: Peak forward current versus case temperature (per diode) I M (A) δ =.1 δ =.3 δ =.5 δ = tp/t T tp Figure 4: Junction capacitance versus reverse voltage applied (typical values, per diode) C j (pf) F = 1 MHz V OSC = 3 mv RMS T j = 25 C δ = 1 δ =.7 2 T c ( C) V R (V) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) /R th(j-c) Single pulse t p (s). 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+2 Figure 6: Non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform, per diode) I FSM (A) 1.E+3 T a = 25 C T a = 15 C t p (s) 1.E+1 1.E-5 1.E-4 1.E-3 1.E-2 4/9 DocID3339 Rev 1
5 STPSC3H12C Figure 7: Total capacitive charges versus reverse voltage applied (typical values, per diode) 1 Q cj (nc) Characteristics V R (V) DocID3339 Rev 1 5/9
6 Package information STPSC3H12C 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.9 to 1.2 N m 2.1 TO-247 long leads package information Figure 8: TO-247 long leads package outline 6/9 DocID3339 Rev 1
7 STPSC3H12C Dim. Package information Table 6: TO-247 long leads package mechanical data mm. Inches Min. Typ. Max. Min. Typ. Max. A D E F F F G 1.9 BSC.429 BSC H L L L L L L M V 1 1 V1 3 3 V3 2 2 DIA DocID3339 Rev 1 7/9
8 Ordering information STPSC3H12C 3 Ordering information Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode STPSC3H12CWL STPSC3H12CWL TO-247 LL 6.9 g 3 Tube 4 Revision history Table 8: Document revision history Date Revision Changes 15-Feb Initial release. 8/9 DocID3339 Rev 1
9 STPSC3H12C IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 217 STMicroelectronics All rights reserved DocID3339 Rev 1 9/9
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