STPSC20H065C-Y. Automotive 650 V power Schottky silicon carbide diode. Description. Features
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1 STPSC2H65C-Y Automotive 65 V power Schottky silicon carbide diode Datasheet - production data Features A1 (1) A2 (3) A1 K A2 K (2) TO-22AB STPSC2H65CTY No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability AEC-Q11 qualified ECOPACK 2 compliant component PPAP capable A1 K A2 TO-247 STPSC2H65CWY Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 65 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and are ideal for automotive applications. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value I F(AV) 2 x 1 A V RRM 65 V T j (max) 175 C September 214 DocID26619 Rev 2 1/9 This is information on a product in full production.
2 Characteristics STPSC2H65C-Y 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 65 V I F(RMS) Forward rms current 22 A Average forward current T c = 135 C (1), DC, per diode 1 I F(AV) T c = 125 C (2), DC, per device 2 A I FSM I FRM Surge non repetitive forward current Repetitive peak forward current t p = 1 ms sinusoidal, T c = 25 C t p = 1 ms sinusoidal, T c = 125 C t p = 1 µs square, T c = 25 C T c = 135 C (1), T j = 175 C, δ =.1 41 A T stg Storage temperature range -55 to +175 C T j Operating junction temperature (3) -4 to +175 C 1. Value based on R th(j-c) max (per diode) 2. Value based on R th(j-c) max (per device) 3. dptot condition to avoid thermal runaway for a diode on its own heatsink dtj Rth ( j a) A Table 3. Thermal resistance Value Symbol Parameter Typ. Max. R th(j-c) Junction to case per diode Per diode TO-247 TO-22AB Total TO-247 TO-22AB R th(c) Coupling.4 Unit C/W When the two diodes 1 and 2 are used simultaneously: ΔT j (diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit I R (1) Reverse leakage current T j = 25 C V R = V RRM T j = 15 C µa V F (2) Forward voltage drop T j = 25 C I F = 1 A T j = 15 C V 1. Pulse test: t p = 5 ms, δ < 2% 2. Pulse test: t p = 38 µs, δ < 2% To evaluate the conduction losses use the following equation: 2 P = 1.35 x I F(AV) x I F (RMS) 2/9 DocID26619 Rev 2
3 STPSC2H65C-Y Characteristics Table 5. Dynamic electrical characteristics per diode Symbol Parameter Test conditions Typ. Unit Q cj (1) C j Total capacitive charge V R = 4 V 28.5 nc V R = V, T c = 25 C, F = 1 MHz 48 Total capacitance pf V R = 4 V, T c = 25 C, F = 1 MHz Most accurate value for the capacitive charge: Q cj = cj (v R ).dv V OUT R Figure 1. Forward voltage drop versus forward current (typical values per diode, low level) 2 18 I FM (A) Pulse test : t p=5µs Figure 2. Forward voltage drop versus forward current (typical values per diode, high level) I FM (A) 1 9 Pulse test : t p=5µs T a=25 C T a=1 C T a=15 C T a=25 C 1 8 T a=175 C 5 4 T a=1 C 6 3 T a=15 C 4 2 V FM (V) T a=175 C V FM(V) Figure 3. Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 4. Peak forward current versus case temperature (per diode) 1.E+3 1.E+2 I R (µa) T j =175 C I M (A) δ =.1 δ=tp/t T tp 1.E+1 T j =15 C 5 4 δ =.3 1.E+ 3 δ =.5 1.E-1 T j =25 C V R(V) 1.E δ = 1 δ =.7 T C ( C) DocID26619 Rev 2 3/9 9
4 Characteristics STPSC2H65C-Y Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration per diode C 5 j (pf) F=1 MHz V OSC =3 mv RMS T j =25 C Z th(j-c) /R th(j-c) 5 V R (V) Single pulse t p(s). 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Figure 7. Non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform) I FSM (A) 1.E+3 Figure 8. Total capacitive charges versus reverse voltage applied (typical values per diode) Q cj (nc) T a =25 C 24 1.E+2 T a =125 C E+1 t p (s) 1.E-5 1.E-4 1.E-3 1.E-2 4 V R (V) /9 DocID26619 Rev 2
5 STPSC2H65C-Y Package information 2 Package information Epoxy meets UL94, V Cooling method: conduction (C) Recommended torque value: TO-22AB.4 to.6 N m, TO N m (1. N m maximum) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 9. TO-22AB dimension definitions H2 A Dia C L5 L7 L6 L2 F2 F1 L9 D L4 F G1 M E G DocID26619 Rev 2 5/9 9
6 Package information STPSC2H65C-Y Ref. Table 6. TO-22AB dimension values Millimeters Dimensions Inches Min. Max. Min. Max. A C D E F F F G G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam /9 DocID26619 Rev 2
7 STPSC2H65C-Y Package information Figure 1. TO-247 dimension definitions E A Heat-sink plane P S R D L2 L L1 b1 b b c A1 BACK VIEW e Table 7. TO-247 dimension values Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ Max. A A b b b c D (1) E e L L L typ..728 typ. P (2) R S Dimension D plus gate protrusion does not exceed 2.5 mm 2. Resin thickness around the mounting hole is not less than.9 mm DocID26619 Rev 2 7/9 9
8 Ordering information STPSC2H65C-Y 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPSC2H65CTY PSC2H65CTY TO-22AB 1.86 g 5 Tube STPSC2H65CWY PSC2H65CWY TO g 3 Tube 4 Revision history Table 9. Document revision history Date Revision Changes 26-Jun First issue. 19-Sep Updated Table 8. 8/9 DocID26619 Rev 2
9 STPSC2H65C-Y IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 214 STMicroelectronics All rights reserved DocID26619 Rev 2 9/9 9
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