STPSC20H065C. 650 V power Schottky silicon carbide diode. Description. Features

Transcription

1 STPSC2H65C 65 V power Schottky silicon carbide diode Datasheet - production data Features A1 (1) A2 (3) A1 K A2 TO-22AB STPSC2H65CT A1 K K (2) A2 TO-247 STPSC2H65CW Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 65 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value I F(AV) 2 x 1 A V RRM 65 V T j (max) 175 C No or negligible reverse recovery Switching behavior independent of temperature Dedicated to PFC applications High forward surge capability November 213 DocID2365 Rev 3 1/9 This is information on a product in full production.

2 Characteristics STPSC2H65C 1 Characteristics Table 2. Absolute ratings (limiting values per diode at 25 C unless otherwise specified) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 65 V I F(RMS) Forward rms current 22 A I F(AV) I FSM Average forward current Surge non repetitive forward current 1. Value based on R th(j-c) max (per diode) T c = 135 C (1), DC, per diode T c = 125 C (2), per device t p = 1 ms sinusoidal, T c = 25 C t p = 1 ms sinusoidal, T c = 125 C t p = 1 µs square, T c = 25 C I FRM Repetitive peak forward current T c = 135 C (1), T j = 175 C, =.1 36 A T stg Storage temperature range -55 to +175 C T j Operating junction temperature (3) -4 to +175 C 2. Value based on R th(j-c) max (per device) 3. dptot condition to avoid thermal runaway for a diode on its own heatsink dtj Rth j a Table 3. Thermal resistance Symbol Parameter When the two diodes 1 and 2 are used simultaneously: T j (diode 1) = P(diode 1) x R th(j-c) (Per diode) + P(diode 2) x R th(c) Typ. Value Max. R th(j-c) Junction to case per diode Per diode TO-247 TO-22AB Total TO-247 TO-22AB R th(c) Coupling.4 Table 4. Static electrical characteristics per diode Symbol Parameter Tests conditions Min. Typ. Max. Unit A A Unit C/W I R (1) Reverse leakage current T j = 25 C V R = V RRM T j = 15 C µa V F (2) Forward voltage drop T j = 25 C I F = 1 A T j = 15 C V 1. t p = 1 ms, < 2% 2. t p = 5 µs, < 2% To evaluate the conduction losses use the following equation: 2 P = 1.35 x I F(AV) x I F (RMS) 2/9 DocID2365 Rev 3

3 STPSC2H65C Characteristics Table 5. Dynamic electrical characteristics per diode Symbol Parameter Test conditions Typ. Unit Q cj (1) Total capacitive charge V R = 4 V 28.5 nc C j Total capacitance 1. Most accurate value for the capacitive charge: Q cj = c j (v R ).dv R V R = V, T c = 25 C, F = 1 MHz 48 V R = 4 V, T c = 25 C, F = 1 MHz 48 V OUT Figure 1. Forward voltage drop versus forward current (typical values per diode, low level) Figure 2. Forward voltage drop versus forward current (typical values per diode, high level) pf 2 18 I FM (A) Pulse test : t p=5µs I FM (A) 1 Pulse test : t p=5µs T a=25 C T a=1 C T a=15 C T a=25 C 1 8 T a=175 C 5 4 T a=1 C 6 3 T a=15 C 4 2 V FM (V) T a=175 C V FM(V) Figure 3. Reverse leakage current versus reverse voltage applied (typical values per diode) Figure 4. Peak forward current versus case temperature, per diode 1.E+3 1.E+2 I R (µa) T j =175 C I M (A) δ =.1 δ=tp/t T tp 1.E+1 T j =15 C 5 4 δ =.3 1.E+ 3 δ =.5 1.E-1 T j =25 C V R(V) 1.E δ = 1 δ =.7 T C ( C) DocID2365 Rev 3 3/9 9

4 Characteristics STPSC2H65C Figure 5. Junction capacitance versus reverse voltage applied (typical values, per diode) Figure 6. Relative variation of thermal impedance junction to case versus pulse duration per diode C 5 j (pf) F=1 MHz V OSC =3 mv RMS T j =25 C Z th(j-c) /R th(j-c) 5 V R (V) Single pulse t p(s). 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ Figure 7. Non-repetitive peak surge forward current versus pulse duration per diode (sinusoidal waveform) I FSM (A) 1.E+3 Figure 8. Total capacitive charges versus reverse voltage applied (typical values per diode) Q cj (nc) T a =25 C 24 1.E+2 T a =125 C E+1 t p (s) 1.E-5 1.E-4 1.E-3 1.E-2 4 V R (V) /9 DocID2365 Rev 3

5 STPSC2H65C Package information 2 Package information Epoxy meets UL94, V Cooling method: conduction (C) Recommended torque value: TO-22AB.4 to.6 N m, TO N m (1. N m maximum) In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 9. TO-22AB dimension definitions H2 A Dia C L5 L7 L6 L2 F2 F1 L9 D L4 F G1 M E G DocID2365 Rev 3 5/9 9

6 Package information STPSC2H65C Ref. Table 6. TO-22AB dimension values Millimeters Dimensions Inches Min. Max. Min. Max. A C D E F F F G G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam /9 DocID2365 Rev 3

7 STPSC2H65C Package information Figure 1. TO-247 dimension definitions E A Heat-sink plane P S R D L2 L L1 b1 b b c A1 BACK VIEW e Table 7. TO-247 dimension values Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ Max. A A b b b c D (1) E e L L L typ..728 typ. P (2) R S Dimension D plus gate protrusion does not exceed 2.5 mm 2. Resin thickness around the mounting hole is not less than.9 mm DocID2365 Rev 3 7/9 9

8 Ordering information STPSC2H65C 3 Ordering information Table 8. Ordering information Order code Marking Package Weight Base qty Delivery mode STPSC2H65CT STPSC2H65C TO-22AB 1.86 g 5 Tube STPSC2H65CW STPSC2H65CW TO g 3 Tube 4 Revision history Table 9. Document revision history Date Revision Changes 31-Aug First issue. 1-Oct Added Max. values to Table 3. 7-Nov Updated Figure 1 and Figure 2. 8/9 DocID2365 Rev 3

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