STPSC2H V power Schottky silicon carbide diode. Description. Features

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1 12 V power Schottky silicon carbide diode Datasheet - production data A K K K A K A DPAK HV 2L K TO-22AC Features No or negligible reverse recovery Switching behavior independent of temperature Robust high voltage periphery Operating Tj from -4 C to 175 C Low VF ECOPACK 2 compliant Description The SiC diode, available in TO-22AC and DPAK HV, is an ultrahigh performance power Schottky rectifier. It is manufactured using a silicon carbide substrate. The wide band-gap material allows the design of a low VF Schottky diode structure with a 12 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC and secondary side applications, this ST SiC diode will boost the performance in hard switching conditions. This rectifier will enhance the performance of the targeted application. Its high forward surge capability ensures a good robustness during transient phases. Symbol IF(AV) VRRM Table 1: Device summary Value 2 A 12 V Tj(max.) 175 C VF(typ.) 1.35 V January 217 DocID3271 Rev 1 1/1 This is information on a product in full production.

2 Characteristics STPSC2H12 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage (Tj = -4 C to +175 C) 12 V IF(RMS) Forward rms current 1 A IF(AV) IFRM IFSM Average forward current Repetitive peak forward current Surge non repetitive forward current TC = 16 C, DC current TC = 12 C, DC current TC = 16 C, Tj = 175 C, δ =.1 9 A tp = 1 ms sinusoidal 2 5 TC = 25 C 15 TC = 15 C 13 tp = 1 µs square TC = 25 C 15 Tstg Storage temperature range -65 to +175 C Tj Operating junction temperature range -4 to +175 C A A Table 3: Thermal parameters Symbol Parameter Typ. Max. Unit Rth(j-c) Junction to case C/W Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit IR (1) VF (2) Reverse leakage current Forward voltage drop Notes: (1) Pulse test: tp = 1 ms, δ < 2% (2) Pulse test: tp = 5 µs, δ < 2% Tj = 25 C VR = VRRM Tj = 15 C Tj = 25 C IF = 2 A Tj = 15 C µa V To evaluate the maximum conduction losses, use the following equation: P = 1.12 x IF(AV) x IF 2 (RMS) Table 5: Dynamic electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit QCj (1) Total capacitive charge VR = 8 V nc Cj Notes: Total capacitance (1) Most accurate value for the capacitive charge: Q cj (V R ) = C j (V)dV V R VR = V, Tc = 25 C, F = 1 MHz VR = 8 V, Tc = 25 C, F = 1 MHz pf 2/1 DocID3271 Rev 1

3 1.1 Characteristics (curves) 4 3 Figure 1: Forward voltage drop versus forward current (typical values) I F (A) Pulse test : t p = 5 µs Characteristics Figure 2: Reverse leakage current versus reverse voltage applied (typical values) I R (µa) 1.E+1 1.E+ T j = 15 C 1.E-1 2 T a = 25 C T a = 15 C T j = 25 C 1.E-2 1 V F(V) E-3 V R (V) 1.E Figure 3: Peak forward current versus case temperature I M (A) 35 δ =.1 T 3 δ = tp/t tp δ =.3 δ = δ = 1 δ =.7 T C ( C) Figure 4: Junction capacitance versus reverse voltage applied (typical values) Cj(pF) F = 1 MHz V OSC = 3 mv RMS T j = 25 C V R (V) Figure 5: Relative variation of thermal impedance junction to case versus pulse duration Z th(j-c) /R th(j-c) Single pulse t p (s). 1.E-5 1.E-4 1.E-3 1.E-2 1.E-1 1.E+ 1.E+3 1.E+2 Figure 6: Non- repetitive peak surge forward current versus pulse duration (sinusoidal waveform) I FSM (A) T a = 25 C T a = 15 C 1.E+1 1.E-5 1.E-4 1.E-3 1.E-2 t p (s) DocID3271 Rev 1 3/1

4 Characteristics Figure 7: Total capacitive charges versus reverse voltage applied (typical values) Q 16 cj (nc) V R (V) STPSC2H12 Figure 8: Thermal resistance junction to ambient versus copper surface under tab on epoxy printed board FR4, ecu = 35 µm (typical values) R th(j-a) ( C/W) DPAK HV 2L S Cu (cm²) /1 DocID3271 Rev 1

5 Package information 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Epoxy meets UL94, V Cooling method: by conduction (C) Recommended torque value:.55 N m Maximum torque value:.7 N m 2.1 TO-22AC rectifier package information Figure 9: TO-22AC package outline DocID3271 Rev 1 5/1

6 Package information STPSC2H12 Table 6: TO-22AC package mechanical data Dimensions Ref. Millimeters Inches Min. Max. Min. Max. A C D E F F G H L typ..645 typ. L L L L L M 2.6 typ..12 typ. Diam /1 DocID3271 Rev 1

7 2.2 DPAK HV 2L package information Figure 1: DPAK HV 2L package outline Package information DocID3271 Rev 1 7/1

8 Package information STPSC2H12 Table 7: DPAK HV 2L package mechanical data Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A A b b c c D D REF.23 REF E E e 2.29 REF.9 REF H L L L4 (1) M 7 7 P 5 5 Notes: (1) Maximum plastic protrusion Figure 11: Footprint (dimensions in mm) 8/1 DocID3271 Rev 1

9 Ordering information 3 Ordering information Table 8: Ordering information Order code Marking Package Weight Base qty. Delivery mode STPSC2H12D STPSC2H12D TO-22AC 1.86 g 5 Tube STPSC2H12B-TR1 STPSC 2H12 DPAK HV 2L.368 g 25 Tape and reel 4 Revision history Table 9: Document revision history Date Revision Changes 24-Jan Initial release. DocID3271 Rev 1 9/1

10 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 217 STMicroelectronics All rights reserved 1/1 DocID3271 Rev 1

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