Symbol Parameter Value Unit. TO220AC Tc=130 C 6 A. ISOWATT220AC Tc=105 C 6. Storage and junction temperature range - 65 to to + 150
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1 BY71(F)-800 FS RECOVERY RECIFIER DIODES FEURES HIGH VOLGE CPBILIY. FS ND SOF RECOVERY INSULED PCKGE : insulating voltage = 2000V DC capacitance = 12 pf K K DESCRIPION Single chip rectifier suited for power conversion and polarity protection applications. his device is packaged in O220C and in ISOW220C. O220C (Plastic) ISOW220C (Plastic) BSOLUE MXIMUM RINGS Symbol Parameter Value Unit IF(RMS) RMS on-state current 12 IF(V) verage forward current δ = 0.5 O220C c=130 C 6 ISOW220C c=105 C 6 IFSM Surge non repetitive forward current =10ms sinusoidal 90 stg j Storage and junction temperature range - 65 to to C C Symbol Parameter BY71-(F) Unit VRRM Repetitive peak off-state voltage V ugust 1998 Ed : 3 1/7
2 HERML RESISNCES Symbol Parameter Value Unit Rth (j-c) Junction to case O220C 2.3 C/W ISOW220C 4.9 ELECRICL CHRCERISICS SIC CHRCERISICS Symbol est Conditions Min. yp. Max. Unit IR ** j = 25 C VR = VRRM 20 µ j = 100 C 1 m VF * j = 100 C IF = V j = 25 C IF = Pulse test : * = 380 µs, duty cycle < 2 % ** = 5 ms, duty cycle < 2 % RECOVERY CHRCERISICS Symbol est Conditions Min. yp. Max. Unit trr j = 25 C IF = 1 VR = 30V dif/dt = -15/µs 300 ns o evaluate the conduction losses use the following equations : P = 1.15 x IF(V) x IF 2 (RMS) 2/7
3 Fig.1 : verage forward power dissipation versus average forward current. Fig.2 : Peak current versus form factor. P F(av)(W) I M() =0.1 =0.2 =1 =0.05 I M P=7.5W =/ P=10W P=5W I F(av)() =/ Fig.3 : Forward voltage drop versus forward current (maximum values). V FM(V) j=100oc I FM() Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. (O 220 C) Fig.5 : Relative variation of thermal impedance junction to case versus pulse duration. (ISOW220C) K=Zth(j-c)/Rth(j-c) K=Zth(j-c)/Rth(j-c) =0.2 =0.1 =0.2 SINGLE PULSE =/ =0.1 SINGLE PULSE (s) =/ 3/7
4 Fig.6 : Non repetitive surge peak forward current versus overload duration. (O 220 B) Fig.7 : Non repetitive surge peak forward current versus overload duration. (ISOW220B) IM() IM IM t(s) t(s) Fig.8 : verage current versus ambient temperature. (duty cycle : 0.5) (O 220 B) Fig.9 : verage current versus ambient temperature. (duty cycle : 0.5) (ISOW220B) I F(av)() Rth(j-a)=15 Rth(j-a)=Rth(j-c) o C/W 1 =/ amb( oc) I F(av)() Rth(j-a)=15 oc/w Rth(j-a)=Rth(j-c) 1 =/ amb( oc) Fig.10 : Junction capacitance versus reverse voltage applied (ypical values). Fig.11 : Recovery charges versus dif/dt. C(pF) F=1Mhz j=25 O C 90% CONFIDENCE j=100 C V R(V) 4/7
5 Fig.12 : Peak reverse current versus dif/dt. Fig.13 : Dynamic parameters versus junction temperature. I RM() QRR;IRM[j]/QRR;IRM[j=100 oc ] 90% CONFIDENCE j=100 oc IF=IF(av) dif/dt(/us) j( oc) Fig.14 : Peak forward voltage versus dif/dt. Fig.15 : Recovery time versus dif/dt. V FP(V) % CONFIDENCE j=100 oc IF=IF(av) 5 dif/dt(/us) t fr(us) % CONFIDENCE j=100o C dif/dt(/us) IF=IF(av) /7
6 PCKGE MECHNICL D O220 C Plastic L2 F H2 L5 Ø I K L9 F1 G L6 L4 C D M E L7 REF. DIMENSIONS Millimeters Inches Min. Max. Min. Max C D E F F G H L typ typ. L L L L L M 2.6 typ typ. Diam. I Marking : ype number Cooling method : C Weight : 1.86 g. Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N 6/7
7 Diam BY71(F)-800 PCKGE MECHNICL D ISOW220C Plastic L2 F H F1 L6 L3 B D E L7 REF. DIMENSIONS Millimeters Inches Min. yp. Max. Min. yp. Max B D E F F G H L L L L Diam G Marking : ype number Cooling method : C Weight : 2 g. Recommended torque value : 0.55m.N Maximum torque value : 0.70m.N Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics 1998 SMicroelectronics - Printed in Italy - ll rights reserved. SMicroelectronics GROUP OF COMPNIES ustralia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - he Netherlands Singapore - Spain - Sweden - Switzerland - aiwan - hailand - United Kingdom - U.S.. 7/7
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