Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 40 V I F(RMS) RMS forward voltage 7 A

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1 SPS4 POWER SCHOKY RECIFIER able : Main Product Characteristics I F(AV) A V RRM 4 V j (max) 5 C V F (max).5 V FEAURES AND BENEFIS Very small conduction losses Negligible switching losses Low forward voltage drop Surface mount miniature packages Avalanche capability specified DESCRIPION Single chip Schottky rectifiers suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMA and SMB, this device is especially intended for surface mounting and used in low voltage, high frequency inverters, free wheeling and polarity protection applications. SMA (JEDEC DO-24AC) SPS4A able 2: Order Codes Part Number SPS4A SPS4U SMB (JEDEC DO-24AA) SPS4U Marking S4 G4 able 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 4 V I F(RMS) RMS forward voltage 7 A I F(AV) Average forward current SMA L = 3 C δ =.5 SMB L = 35 C δ =.5 A I FSM Surge non repetitive forward current tp = ms sinusoidal 6 A I RRM Repetitive peak reverse current tp = 2µs F = khz square A I RSM Non repetitive peak reverse current tp = µs square A P ARM Repetitive peak avalanche power tp = µs j = 25 C 9 W stg Storage temperature range -65 to + 5 C j Maximum operating junction temperature * 5 C dv/dt Critical rate of rise of reverse voltage V/µs * : dptot thermal runaway condition for a diode on its own heatsink dj > Rth( j a) August 24 REV. 8 /7

2 able 4: hermal Resistance Symbol Parameter Value Unit R th(j-l) Junction to lead SMA 3 SMB 25 C/W able 5: Static Electrical Characteristics Symbol Parameter ests conditions Min. yp Max. Unit j = 25 C 2 µa I R * Reverse leakage current V R = V RRM j = C 5 2 ma j = 25 C.55 I F = A j = 25 C 3 5 V F ** Forward voltage drop V j = 25 C.65 I F = 2A j = 25 C.53.6 Pulse test: * tp = 5 ms, δ < 2% ** tp = 38 µs, δ < 2% o evaluate the conduction losses use the following equation: P = x I F(AV) +. I F 2 (RMS) Figure : Average forward power dissipation versus average forward current Figure 2: Average forward current versus ambient temperature (δ =.5).7.6 P F(AV) (W) δ =.5 δ =. δ = δ =.5.2. I F(AV) (A) R th(j-a) =Rth(j-I).5 δ =.3. I F(AV) (A) δ=tp/ tp SMA R th(j-a) = C/W S (CU) =.5cm2 δ=tp/ tp amb( C) SMB R th(j-a) =8 C/W S (CU) =.5cm Figure 3: Normalized avalanche power derating versus pulse duration Figure 4: Normalized avalanche power derating versus junction temperature P ARM(t p) P ARM(µs).2 P ARM(t p) P ARM(25 C) t p(µs) ( C) j /7

3 Figure 5: Non repetitive surge peak forward current versus overload duration (maximum values) (SMA) Figure 6: Non repetitive surge peak forward current versus overload duration (maximum values) (SMB) 8 I (A) M 8 I (A) M a=25 C 5 a=25 C 4 3 a=5 C 4 3 a=5 C 2 IM a= C 2 IM a= C t δ=.5 t(s) E-3 E-2 E- E+ t δ=.5 t(s) E-3 E-2 E- E+ Figure 7: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(cu)=35µm, recommended pad layout) (SMA) Figure 8: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(cu)=35µm, recommended pad layout) (SMB) Z th(j-c) /Rth(j-c) δ =.5 δ = δ =.. Single pulse t p(s) δ=tp/ tp. E-2 E- E+ E+ E Z th(j-c) /Rth(j-c) δ =.5 δ = δ =.. Single pulse t p(s) δ=tp/ tp. E-2 E- E+ E+ E+2 E+3 Figure 9: Reverse leakage current versus reverse voltage applied (typical values) Figure : Junction capacitance versus reverse voltage applied (typical values) E+3 E+2 I (µa) R j=25 C 2 C(pF) F=MHz j=25 C E+ j=75 C 5 E+ E- E-2 j=25 C V (V) R V (V) R /7

4 Figure : Forward voltage drop versus forward current (maximum values) Figure 2: hermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMA) E+ I FM(A) 4 R th(j-a) ( C/W) j=25 C 2 P=.5W E+ 8 6 E- 4 V FM E (V) 2 S(Cu)(cm²) Figure 3: hermal resistance junction to ambient versus copper surface under each lead (Epoxy printed circuit board FR4, copper thickness: 35µm) (SMB) 2 R th(j-a) ( C/W) P=.5W S(Cu)(cm²) /7

5 Figure 4: SMA Package Mechanical Data C E E L D A A2 b DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A b c E E D L Figure 5: SMA Foot Print Dimensions (in millimeters) /7

6 Figure 6: SMB Package Mechanical Data DIMENSIONS E REF. Millimeters Inches Min. Max. Min. Max. D A A b E c A E C A2 E L b D L Figure 7: SMB Foot Print Dimensions (in millimeters) /7

7 able 6: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode SPS4A S4 SMA.68 g 5 ape & reel SPS4U G4 SMB.7 g 25 ape & reel Band indicates cathode Epoxy meets UL94, V able 7: Revision History Date Revision Description of Changes Jul-23 7 Last update. Aug-24 8 SMA package dimensions update. Reference A max. changed from 2.7mm (.6inc.) to 2.3mm (.8). Information furnished is believed to be accurate and reliable. However, SMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SMicroelectronics. Specifications mentioned in this publication are subject to change without notice. his publication supersedes and replaces all information previously supplied. SMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SMicroelectronics. he S logo is a registered trademark of SMicroelectronics. All other names are the property of their respective owners 24 SMicroelectronics - All rights reserved SMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7