STTH1602C HIGH EFFICIENCY ULTRAFAST DIODE MAIN PRODUCT CHARACTERISTICS. Up to 2 x 10A 200 V Tj (max) 175 C V RRM
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1 STTH162C HIGH ICINCY ULTRST IO MIN PROUCT CHRCTRISTICS TURS N BNITS Suited for SMPS Low losses Low forward and reverse recovery times Low leakage current High junction temperature Insulated package: TO-22PB SCRIPTION ual center tap rectifier suited for Switch Mode Power Supplies and High frequency C to C converters. Packaged in TO-22B, 2 P, TO-22PB and I 2 P, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. BSOLUT RTINGS (limiting values, per diode) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 2 V I (RMS) RMS forward current 3 I (V) I (V) V RRM Up to 2 x 1 2 V Tj (max) 175 C V (typ).78 V t rr (typ) 21 ns TO-22B STTH162CT I 2 P STTH162CR verage forward TO-22B / I 2 P / Tc = 15 C Per diode 8 current δ =.5 2 P Tc = 14 C Per device 16 Tc = 14 C Per diode 1 Tc = 13 C Per device 2 TO-22PB Tc = 13 C Per diode 8 Tc = 1 C Per device 16 Tc = 11 C Per diode 1 Tc = 75 C Per device 2 I SM Surge non repetitive forward current tp = 1 ms Sinusoidal 8 T stg Storage temperature range C Tj Maximum operating junction temperature 175 C TO-22PB STTH162CP 2 P STTH162CG ebruary 24 - d: 1 1/7
2 STTH162C THRML PRMTRS Symbol Parameter Maximum Unit R th (j-c) Junction to case TO-22B / I 2 P / 2 P Per diode 3. C/W Per device 1.9 TO-22PB Per diode 5.5 Per device 4.5 R th (j-c) Coupling TO-22B / I 2 P / 2 P.8 C/W TO-22PB 3.5 When the diodes 1 and 2 are used simultaneously: Tj (diode1) = P(diode1) x R th(j-c) (per diode) + P(diode2) x R th(c) STTIC LCTRICL CHRCTRISTICS (per diode) Symbol Parameter Tests conditions Min. Typ. Max. Unit I R * Reverse leakage current Tj = 25 C V R =V RRM 6 µ Tj = 125 C 4 6 V ** orward voltage drop Tj = 25 C I = V Tj = 25 C I = Tj = 15 C I = Tj = 15 C I = Pulse test: * tp = 5ms, δ <2% ** tp = 38µs, δ <2% To evaluate the maximum conduction losses use the following equation : P =.73 x I (V) +.2 I 2 (RMS) YNMIC LCTRICL CHRCTRISTICS Symbol Parameter Tests conditions Min. Typ. Max. Unit t rr Reverse recovery time Tj = 25 C I =1 V R = 3V di /dt = 1 /µs ns I RM Reverse recovery current Tj = 125 C I =8 V R = 16V di /dt = 2 /µs t fr orward recovery time Tj = 25 C I =8 di /dt = 1 /µs V R = 1.1 x V max 16 ns V P orward recovery voltage Tj = 25 C I =8 di /dt = 1 /µs 2.4 V 2/7
3 STTH162C ig. 1: Peak current versus duty cycle (per diode). ig. 2-1: orward voltage drop versus forward current (typical values, per diode). 8 I () M 1 I M() IM δ=tp/t T tp T j=15 C 4 3 P = 15W P = 8W 2 1 P = 3W δ V M(V) ig. 2-2: orward voltage drop versus forward current (maximum values, per diode). 1 I M() ig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-22B, 2 P, I 2 P). 1. Z th(j-c) /Rth(j-c) T j=15 C Single pulse V M(V) t (s) p ig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-22PB). 1. Z th(j-c) /Rth(j-c) ig. 4: Junction capacitance versus reverse voltage applied (typical values, per diode). 1 C(p) =1MHz V OSC=3mVRMS Single pulse.1. t (s) p V (V) R /7
4 STTH162C ig. 5: Reverse recovery charges versus di /dt (typical values, per diode). ig. 6: Reverse recovery time versus di /dt (typical values, per diode) Q (nc) rr I =8 V R=16V T j=125 C di /dt(/µs) t (ns) rr I =8 V R=16V T j=125 C di /dt(/µs) ig. 7: Peak reverse recovery current versus di /dt (typical values, per diode). ig. 8: ynamic parameters versus junction temperature. 16 I RM() 1.4 Q rr; I RM[T j]/q rr;i RM[T j=125 C] 14 I =8 V R=16V 1.2 I =8 V R=16V T j=125 C di /dt(/µs) IRM Qrr T ( C) j ig. 9: Thermal resistance junction to ambient versus copper surface under tab (poxy printed circuit board R4, e CU : 35µm) for 2 P. 8 R th(j-a) ( C/W) S(Cu)(cm²) /7
5 STTH162C Ordering code Marking Package Weight Base qty elivery mode STTH162CT STTH162CT TO-22B 2.23 g 5 Tube STTH162CG STTH162CG 2 P 1.48 g 5 Tube STTH162CG-TR STTH162CG 2 P 1.48 g 1 Tape & reel STTH162CR STTH162CR I 2 P 1.49 g 5 Tube STTH162CP STTH162CP TO-22PB 1.7g 5 Tube PCG MCHNICL T 2 P IMNSIONS C2 R. Millimeters Inches L B L3 B C B2 B C R C G G L M * V L * LT ZON NO LSS THN 2mm M R.4 typ..16 typ. V2 8 8 OOTPRINT IMNSIONS (in millimeters) /7
6 STTH162C PCG MCHNICL T I 2 P IMNSIONS R. Millimeters Inches c b b b c c L L1 b2 b e L L e b c PCG MCHNICL T TO-22PB L3 L4 G1 H G L6 L5 1 2 ia B L7 IMNSIONS R. Millimeters Inches B G G H Typ..63 Typ. L L L L L ia /7
7 STTH162C PCG MCHNICL T TO-22B IMNSIONS 2 1 G1 H2 ia G L5 L9 L6 L4 C M L7 R. Millimeters Inches C G G H typ..645 typ. L L L L L M 2.6 typ..12 typ. iam poxy meets UL94,V Cooling method: by conduction (method C) Recommended torque value (TO-22B):.8 N.m. Maximum torque value (TO-22B): 1. N.m. Recommended torque value (TO-22PB):.55 N.m. Maximum torque value (TO-22PB):.7 N.m. Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. ll other names are the property of their respective owners. 24 STMicroelectronics - ll rights reserved. STMicroelectronics GROUP O COMPNIS ustralia - Belgium - Brazil - Canada - China - Czech Republic - inland - rance - Germany - Hong ong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United ingdom - United States 7/7
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