TN5015H-6G. High temperature 50 A SCRs. Description. Features. Applications
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1 TN515H-6G High temperature 5 SCRs Datasheet - production data Features G K K G D²PK High junction temperature: Tj = 15 C High noise immunity dv/dt = 5 V/µs up to 15 C Gate triggering current IGT = 15 m Peak off-state voltage VDRM/VRRM = 6 V High turn-on current rise di/dt = 1 /µs ECOPCK 2 compliant component Description Thanks to its junction temperature Tj up to 15 C, the device offers high thermal performance operation up to 5. Its D²PK package allows modern SMD designs as well as compact back to back configuration. Its trade-off noise immunity (dv/dt = 5 V/μs) versus its gate triggering current (IGT = 15 m) and its turn-on current rise (di/dt = 1 /μs) allow to design robust and compact control circuit for voltage regulator in motorbikes and industrial drives, overvoltage crowbar protection, motor control circuits in power tools and kitchen appliances, inrush current limiting circuits. Table 1: Device summary Order code Package VDRM/VRRM IGT TN515H-6G D²PK 6 V 15 m pplications Motorbike voltage regulator circuits Inrush current limiting circuits Motor control circuits and starters Solid state relays June 217 DocID3697 Rev 1 1/9 This is information on a product in full production.
2 Characteristics TN515H-6G 1 Characteristics Table 2: bsolute maximum ratings (limiting values), Tj = 25 C unless otherwise specified Symbol Parameter Value Unit IT(RMS) IT(V) ITSM RMS on-state current (18 conduction angle) verage on-state current (18 conduction angle) Non repetitive surge peak on-state current Tc = 12 C 5 Tc = 122 C 3 Tc = 128 C 25 Tc = 134 C 2 tp = 8.3 ms 493 tp = 1 ms 45 I 2 t I 2 t value for fusing tp = 1 ms s dl/dt Critical rate of rise of on-state current IG = 2 x IGT, tr 1 ns f = 6 Hz 1 /µs VDRM/VRRM Repetitive peak off-state voltage Tj = 15 C 6 V VDSM/VRSM Non repetitive surge peak off-state voltage tp = 1 ms VDRM/VRRM + 1 IGM Peak gate current tp = 2 µs Tj = 15 C 4 PG(V) verage gate power dissipation Tj = 15 C 1 W VRGM Maximum peak reverse gate voltage 5 V Tstg Storage junction temperature range -4 to +15 C Tj Maximum operating junction temperature -4 to +15 C V Table 3: Electrical characteristics (Tj = 25 C unless otherwise specified) Symbol Test conditions Value Unit IGT Max. 15 m VD = 12 V, RL = 33 Ω VGT Max. 1.3 V VGD VD = VDRM, RL = 3.3 kω Tj = 15 C Min..15 V IH IT = 5 m, gate open Max. 6 m IL IG = 1.2 x IGT Max. 8 m dv/dt VD = 42 V, gate open Tj = 15 C Min. 5 V/µs tgt ITM = 1, VD = 6 V, IG = 1 m, (dig/dt) max =.2 /µs Typ. 1.9 µs tq ITM = 1, VD = 42 V, (di/dt)off = 3 /µs, VR = 25 V, dvd/dt = 5 V/µs Tj = 15 C Typ. 85 µs 2/9 DocID3697 Rev 1
3 TN515H-6G Characteristics ltable 4: Static characteristics Symbol Test conditions Value Unit VTM ITM = 1, tp = 38 µs Tj = 25 C Max VTO Threshold voltage Tj = 15 C Max..85 V RD Dynamic resistance Tj = 15 C Max. 9 mω IDRM, IRRM Tj = 25 C 1 µ VD = VDRM = VRRM Max. Tj = 15 C 6 m Table 5: Thermal parameters Symbol Parameter Value Unit Rth(j-c) Junction to case (DC) Max..6 Rth(j-a) Junction to ambient (DC) S (1) = 1 cm² Typ. 45 C/W Notes: (1) S = Copper surface under tab DocID3697 Rev 1 3/9
4 Characteristics 1.1 Characteristics (curves) Figure 1: Maximum average power dissipation versus average on-state current P(W) 5 α = 3 α = 6 α = 9 α = 12 α = 18 D.C I T(V)() TN515H-6G Figure 2: verage and DC on-state current versus case temperature I T(V) () 6 α = 3 α = 6 α = 9 α = 12 α = 18 D.C T C ( C) Figure 3: verage and D.C. on state current versus ambient temperature I T(V) () 3. Figure 4: Relative variation of thermal impedance versus pulse duration K=[Z th /R th ] 1.E+ 2.5 D.C Z th(j-c) Z th(j-a) 2. α = 18 1.E E-2.5 T ( C) tp(s) 1.E-3 1.E-3 1.E-2 1.E-1 1.E+ 1.E+1 1.E+2 1.E+3 Figure 5: Relative variation of gate trigger current and gate voltage versus junction temperature (typical values) I GT,V GT [T j ] / I GT,V GT [T j =25 C] V GT I GT T j ( C) Figure 6: Relative variation of holding and latching current versus junction temperature (typical values) I H, I L [T j ]/ I H, I L [T j =25 C] I L I H T j ( C) /9 DocID3697 Rev 1
5 TN515H-6G Figure 7: Relative variation of static dv/dt immunity versus junction temperature (typical values) dv/dt [ T j ] / dv/dt [ T j = 15 C ] 12 bove test equipment capability T j ( C) V D = 42 V Characteristics Figure 8: Surge peak on-state current versus number of cycles I TSM () Repetitive T c = 12 C Non repetitive T j initial = 25 C Number of cycles Figure 9: Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < 1 ms Figure 1: On-state characteristics (maximum values) Figure 11: Relative variation of leakage current versus junction temperature I DRM, I RRM [T j ; V DRM, V RRM ] / I DRM, I RRM [15 C; 6 V] 1.E+ Figure 12: Thermal resistance junction to ambient versus copper surface under tab 8 R th(j-a) ( C/W) 1.E-1 1.E-2 1.E-3 V DRM = V RRM = 6 V E-4 1.E T j ( C) 2 Epoxy printed board FR4, e CU = 35 µm 1 SCu(cm²) DocID3697 Rev 1 5/9
6 Package information TN515H-6G 2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPCK packages, depending on their level of environmental compliance. ECOPCK specifications, grade definitions and product status are available at: ECOPCK is an ST trademark. Epoxy meets UL94, V Lead-free, halogen-free package 2.1 D²PK package information Figure 13: D²PK package outline 6/9 DocID3697 Rev 1
7 TN515H-6G Package information Table 6: D²PK package mechanical data Dimensions Ref. Millimeters Inches (1) Min. Typ. Max. Min. Typ. Max b b c c D D D e E E E G H L L L R V2 8 8 Notes: (1) Dimensions in inches are given for reference only Figure 14: D²PK recommended footprint (dimensions are in mm) DocID3697 Rev 1 7/9
8 Ordering information TN515H-6G 3 Ordering information Figure 15: Ordering information scheme TN 5 15 H - 6 G - TR Series TN = SCR Current 5 = 5 Gate sensitivity 15 = 15 m High temperature H = 15 C Voltage 6 = 6 V Package G=D²P K Packing mode Blank = tube TR = Tape and reel Table 7: Ordering information Order code Marking Package Weight Base qty. Delivery mode TN515H-6G TN515H6 D²PK 1.5 g 5 Tube TN515H-6G-TR TN515H6 D²PK 1.5 g 1 Tape and reel 4 Revision history Table 8: Document revision history Date Revision Changes 8-Jun Initial release. 8/9 DocID3697 Rev 1
9 TN515H-6G IMPORTNT NOTICE PLESE RED CREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. ll other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. 217 STMicroelectronics ll rights reserved DocID3697 Rev 1 9/9
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