T1635T-8FP. 16 A Snubberless Triac. Features. Applications. Description

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1 16 A Snubberless Triac G A A1 Features Datasheet production data Medium current Triac High static and dynamic commutation Three quadrants ECOPACK compliant component Complies with UL standards (File ref: E8173) TO-FPAB (T1635T-8FP) G A A1 Table 1. Device summary Symbol Value Unit T(rms) 16 A V DRM, V RRM 8 V V DSM, V RSM 9 V GT 35 ma Applications General purpose AC line load switching Motor control circuits Small home appliances Lighting nrush current limiting circuits Overvoltage crowbar protection Description Available in through-hole full pack package, the T1635T-8FP Triac can be used for the on/off or phase angle control function in general purpose AC switching where high commutation capability is required. This device can be used without a snubber circuit when the limits defined in this datasheet are respected. Provides UL certified insulation rated at kv. TM: Snubberless is a trademark of STMicroelectronics January 15 DocD6 Rev 3 1/9 This is information on a product in full production. 9

2 Characteristics T1635T-8FP 1 Characteristics Table. Absolute ratings (limiting values, T j = 5 C unless otherwise stated) Symbol Parameter Value Unit T(rms) On-state rms current (full sine wave) T c = 87 C 16 A TSM Non repetitive surge peak on-state current (full cycle, T j initial = 5 C) F = 5 Hz t = ms 1 F = 6 Hz t = 16.7 ms 16 ² t ² t value for fusing, T j initial = 5 C t p = 1 ms 95 A ² s V DRM, V RRM Repetitive surge peak off-state voltage T j = 15 C 6 T j = 15 C 8 V DSM, V RSM Non repetitive surge peak off-state voltage t p = 1 ms 9 V Critical rate of rise of on-state current d/dt F = 1 Hz 1 A/µs G = x GT, t r 1 ns GM Peak gate current t p = µs T j = 15 C A P G(AV) Average gate power dissipation T j = 15 C 1 W T stg Storage junction temperature range - to + 15 C T j Operating junction temperature range - to + 15 T L Maximum lead temperature for soldering during 1 s 6 C V ins nsulation rms voltage, 1 minute kv A V Table 3. Electrical characteristics (T j = 5 C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit GT (1) V D = 1 V, R L = 3 Ω - - Min Max. 35 ma V GT V D = 1 V, R L = 3 Ω - - Max. 1.3 V V GD V D = V DRM, R L = 3.3 kω, T j = 15 C - - Min.. V () H T = 5 ma Max. ma - 6 L G = 1. GT Max. 65 ma dv/dt V D = 536 V, gate open T j = 15 C Min. V/µs V D = V, gate open T j = 15 C 1 V/µs (d/dt)c Without snubber (dv/dt)c > V/µs) T j = 15 C Min. 16 T j = 15 C 8 A/ms 1. Minimum GT is guaranteed at 5% of GT max.. For both polarities of A referenced to A1 /9 DocD6 Rev 3

3 Characteristics Table. Static characteristics Symbol Test conditions Value Unit (1) V T V (1) t R (1) d DRM RRM TM =.6 A, t p = 38 µs T j = 5 C Max V Threshold voltage T j = 15 C Max..85 V Dynamic resistance T j = 15 C Max. 7 mω T j = 5 C 7.5 µa V DRM = V RRM = 8 V Max. T j = 15 C 1 ma V DRM = V RRM = 6 V T j = 15 C Max For both polarities of A referenced to A1 Table 5. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC) 3.3 C/W R th(j-a) Junction to ambient 6 C/W Figure 1. Maximum power dissipation versus on-state rms current (full cycle) P(W) T(RMS) (A) Figure 3. On-state rms current versus ambient temperature (free air convection) 3. T(RMS) (A) Figure. On-state rms current versus case temperature (full cycle) T(RMS) (A) T ( C) C Figure. Relative variation of thermal impedance versus pulse duration K = [Z th / R th ] 1.E+.5. Z th(j-c) Z th(j-a) E T ( C) a E- t p (s) 1.E-3 1.E- 1.E-1 1.E+ 1.E+1 1.E+ 1.E+3 1.E+ DocD6 Rev 3 3/9

4 Characteristics T1635T-8FP Figure 5. On-state characteristics (maximum values) TM(A) Tjmax: V to =.85 V R d = 7 m T j =15 C T j =5 C V TM(V) Figure 6. Surge peak on-state current versus number of cycles TSM(A) Repetitive 3 T c = 87 C 1 Non repetitive T initial = 5 C j t = ms One cycle Number of cycles Figure 7. Non repetitive surge peak on-state current and corresponding values of t 1 TSM (A), ²t (A²s) T initial = 5 C j. Figure 8. Relative variation of gate trigger current and gate voltage versus junction temperature (typical values), V [T ] /, V [T = 5 C] GT GT j GT GT j 1 dl/dt limitation: 1 A / µs 1.5 GT Q3 GT Q1 - Q TSM 1. V GT 1 ²t.5 1 sinusoidal pulse with width t <1 ms p t(ms) p T ( C) C Figure 9. Relative variation of static dv/dt immunity versus junction temperature (typical values) Figure 1. Relative variation of holding current and latching current versus junction temperature (typical values) 5 dv/dt [T j ] / dv/dt [T j = 15 C]., [T ] /, [T = 5 C] H L j H L j V D=V R= V L 1.5 H Tj( C) T ( C) j /9 DocD6 Rev 3

5 Characteristics Figure 11. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dv/dt)c (d/dt)c [ (dv/dt)c ] / Specified (d/dt)c Figure 1. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) 9 (dl/dt)c [T j] / (dl/dt)c [T j = 15 C] (dv/dt)c (V/µs) T ( C) j Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) 1.E+, [T ; V, V ] /, DRM RRM j DRM RRM DRM RRM V DRM = V RRM = 8 V 1.E-1 V DRM = V RRM = 6 V 1.E- V DRM = V RRM = V 1.E-3 [T j =15 C; 8 V] [T j =15 C, 6 V] 1.E- T ( C) j DocD6 Rev 3 5/9

6 Package information T1635T-8FP Package information Lead-free package Recommended torque:. to.6 N m n order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 1. TO-FPAB dimension definitions H A B Dia L6 L L7 L3 L5 F1 D L F G1 F E G 6/9 DocD6 Rev 3

7 Package information Ref. Table 6. TO-FPAB dimension values Millimeters Dimensions nches Min. Max. Min. Max. A B D E F F F G G H L 16 Typ..63 Typ. L L L L L Dia DocD6 Rev 3 7/9

8 Ordering information T1635T-8FP 3 Ordering information Figure 15. Ordering information scheme Triac Current 16 = 16 A Gate sensitivity 35 = 35 ma Specific application T = ncreased (d/dt)c and dv/dt producing reduced TSM Voltage (V DRM, V RRM ) 8 = 8 V Package FP = TO-FPAB T T - 8 FP Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode T1635T-8FP T1635T-8FP TO-FPAB. g 5 Tube Revision history Table 8. Document revision history Date Revision Changes 7-May-13 1 nitial release. 1-June-13 Added UL certification information. 8-Jan-15 3 Updated Features, Table and Table 5. 8/9 DocD6 Rev 3

9 MPORTANT NOTCE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. nformation in this document supersedes and replaces information previously supplied in any prior versions of this document. 15 STMicroelectronics All rights reserved DocD6 Rev 3 9/9

T3035H-8I. 30 A V TO-220AB insulated H-series Snubberless Triac. Datasheet. Features. Applications. Description. TO-220AB insulated

T3035H-8I. 30 A V TO-220AB insulated H-series Snubberless Triac. Datasheet. Features. Applications. Description. TO-220AB insulated Datasheet 3 A - 8 V TO-22AB insulated H-series Snubberless Triac G A2 A1 Features 3 A high current Triac 8 V symmetrical blocking voltage 15 C maximum junction temperature T j Three triggering quadrants