BTA10 and BTB10 Series

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1 BTA and BTB Series SNUBBERLESS & STANDARD A TRIACS Table : Main Features Symbol Value Unit I T(RMS) A V DRM /V RRM 6 and 8 V G A I GT (Q ) 5 to 5 ma DESCRIPTION Available either in through-hole or surface-mount packages, the BTA and BTB triac series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers,... The snubberless version (W suffix) is specially recommended for use on inductive loads, thanks to their high commutation performances. By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 5V RMS ) complying with UL standards (File ref.: E8734). A G TO-AB Insulated (BTA) Table : Order Codes Part Number BTA-xxxxxRG BTB-xxxxxRG A G TO-AB (BTB) Marking See page table 8 on page 6 Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine TO-AB T c = 5 C wave) TO-AB Ins. T c = 95 C A I TSM Non repetitive surge peak on-state F = 5 Hz t = ms current (full cycle, T j initial = 5 C) F = 6 Hz t = 6.7 ms 5 A I ² t I ² t Value for fusing t p = ms 55 A ² s di/dt Critical rate of rise of on-state current I G = x I GT, t r ns F = Hz T j = 5 C 5 A/µs V DSM /V RSM Non repetitive surge peak off-state voltage t p = ms T j = 5 C V DSM /V RSM + I GM Peak gate current t p = µs T j = 5 C 4 A P G(AV) Average gate power dissipation T j = 5 C W T stg T j Storage junction temperature range Operating junction temperature range - 4 to to + 5 V C February 6 REV. 6 /7

2 Tables 4: Electrical Characteristics (T j = 5 C, unless otherwise specified) SNUBBERLESS (3 quadrants) BTA / BTB Symbol Test Conditions Quadrant Unit CW BW I GT () I - II - III MAX ma V D = V R L = 33 Ω V GT I - II - III MAX..3 V V GD V D = V DRM R L = 3.3 kω T j = 5 C I - II - III MIN.. V I H () I T = 5 ma MAX ma I - III 5 7 I L I G =. I GT MAX. ma II 6 8 dv/dt () V D = 67 %V DRM gate open T j = 5 C MIN. 5 V/µs (di/dt)c () Without snubber T j = 5 C MIN A/ms Standard (4 quadrants) Symbol Test Conditions Quadrant BTA / BTB I GT () I - II - III 5 5 MAX. V D = V R L = 33 Ω IV 5 ma V GT ALL MAX..3 V V GD V D = V DRM R L = 3.3 kω T j = 5 C ALL MIN.. V I H () I T = 5 ma MAX. 5 5 ma I - III - IV 4 5 I L I G =. I GT MAX. II 8 ma dv/dt () V D = 67 %V DRM gate open T j = 5 C MIN. 4 V/µs (dv/dt)c () (di/dt)c = 4.4 A/ms T j = 5 C MIN. 5 V/µs C B Unit Table 5: Static Characteristics Symbol Test Conditions Value Unit V T () I TM = 4 A t p = 38 µs T j = 5 C MAX..55 V V t () Threshold voltage T j = 5 C MAX..85 V R d () Dynamic resistance T j = 5 C MAX. 4 mω I DRM T j = 5 C 5 µa V I DRM = V RRM MAX. RRM T j = 5 C ma Note : minimum I GT is guaranted at 5% of I GT max. Note : for both polarities of referenced to A. /7

3 Table 6: Thermal resistance Symbol Parameter Value Unit R th(j-c) R th(j-a) TO-AB.5 Junction to case (AC) C/W TO-AB Insulated.4 TO-AB Junction to ambient 6 C/W TO-AB Insulated Figure : Maximum power dissipation versus RMS on-state current (full cycle) Figure : RMS on-state current versus case temperature (full cycle) P(W) I T(RMS) (A) I T(RMS) (A) T ( C) C BTA BTB Figure 3: Relative variation of thermal impedance versus pulse duration Figure 4: On-state characteristics (maximum values) E+ K=[Z th/rth] Zth(j-c) I TM(A) Tj max. V t =.85V R d = 4 mω T= j Tj max. E- Zth(j-a) T j = 5 C t p(s) E- E-3 E- E- E+ E+ E+ 5E+ V TM(V) /7

4 Figure 5: Surge peak on-state current versus number of cycles Figure 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width t p < ms and corresponding value of I t I TSM(A) Repetitive T C=95 C Non repetitive Tj initial=5 C Number of cycles t=ms One cycle I TSM(A), I t (A s) di/dt limitation: 5A/µs Tj initial=5 C t p(ms).... ITSM I t Figure 7: Relative variation of gate trigger current, holding current and latching current versus junction temperature (typical values) Figure 8: Relative variation of critical rate of decrease of main current versus (dv/dt)c (typical values).5 I GT,I H,I L[T] j / I GT,I H,I L[T j=5 C]. (di/dt)c [(dv/dt)c] / Specified (di/dt)c..5 IGT B C. IH & IL.. BW/CW.5 T j( C) (dv/dt)c (V/µs) Figure 9: Relative variation of critical rate of decrease of main current versus junction temperature (di/dt)c [T j ] / (di/dt)c [T j specified] T j( C) /7

5 Figure : Ordering Information Scheme BT A - 6 BW RG Triac series Insulation A = insulated B = non insulated Current = A Voltage 6 = 6V 8 = 8V Sensitivity and type B = 5mA Standard C = 5mA Standard Packing mode RG = Tube BW = 5mA Snubberless CW = 35mA Snubberless Table 7: Product Selector Part Number Voltage (xxx) Sensitivity Type 6 V 8 V Package BTA/BTB-xxxB X X 5 ma Standard TO-AB BTA/BTB-xxxBW X X 5 ma Snubberless TO-AB BTA/BTB-xxxC X X 5 ma Standard TO-AB BTA/BTB-xxxCW X X 35 ma Snubberless TO-AB BTB: non insulated TO-AB package 5/7

6 Figure : TO-AB (insulated and non insulated) Package Mechanical Data I4 l3 l e B Ø I b a L A a b c M C c F DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F ØI I L l l M.6. In order to meet environmental requirements, ST offers these devices in ECOPACK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: Table 8: Ordering Information Ordering type Marking Package Weight Base qty Delivery mode BTA/BTB-xxxyzRG BTA/BTB-xxxyz TO-AB.3 g 5 Tube Note: xxx = voltage, yy = sensitivity, z = type Table 9: Revision History Date Revision Description of Changes Apr- 5A Last update. 3-Feb-6 6 TO-AB delivery mode changed from bulk to tube. ECOPACK statement added. 6/7

7 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 6 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 7/7

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