T1610H. 16 A Triac, high temperature and logic level. Applications. Description. Features. Electric heater

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1 T16H 16 A Triac, high temperature and logic level Datasheet production data A Applications Electric heater G A1 A Water heater, room heater Coffee machine Hand dryer Thermostat Features A1 A Junction temperature up to 15 C max. Logic level gate current: ma Repetitive peak off-state voltage: 6 V High TSM High thermal cycling performance G TO-AB (T16H-6T) Description This clip technology Triac has very high thermal cycling performance, and the design structure presents a higher TSM. The 15 C maximum junction temperature of this device offers easier thermal management. ts ma gate current offers direct drive from a microcontroller, mainly for resistive load control. Order code Table 1. Device summary Package V DRM, V RRM GT T(RMS) T16H-6T TO-AB 6 V ma 16 A May 13 DocD463 Rev 1 1/9 This is information on a product in full production. 9

2 Characteristics T16H 1 Characteristics Table. Absolute maximum rating (T j = 5 C, unless otherwise specified) Symbol Parameter Value Unit T(RMS) On-state rms current (18 conduction angle) T c = 133 C 16 A TSM Non repetitive surge peak on-state current, T j initial = 5 C t p = 16.7 ms 168 t p = ms 16 ² t ² t Value for fusing t p = ms 169 A ² s d/dt Critical rate of rise of on-state current, G = x GT, tr ns F = 6 Hz A/µs V DRM, V RRM Repetitive peak off-state voltage T j = 15 C 6 V V DSM, V RSM Non repetitive peak off-state voltage t p = ms 7 V GM Peak gate current t p = µs 4 A P GM Peak gate power dissipation t p = µs W P G(AV) Average gate power dissipation 1 W T stg T j Storage junction temperature range Operating junction temperature range A -4 to +15 C T L Lead temperature for soldering during s 6 C Table 3. Electrical characteristics (T j = 5 C, unless otherwise specified) Symbol Test conditions Quadrant Value Unit GT V D = 1 V, R L = MN..5 ma MAX. ma V GT V D = 1 V, RL = MAX. 1.3 V V GD V D = V DRM, R L = 3.3 k T j = 15 C - - MN.. V H T = 5 ma, gate open MAX. 15 ma L G = 1. GT - - MAX. 3 ma dv/dt V D = 67% x V DRM, V RRM, gate open T j = 15 C MN. V/µs (dl/dt)c t gt (dv/dt)c =.1 V/µs 8.5 T j = 15 C MN. A/ms (dv/dt)c = V/µs 3 TM = 13 A, V D = 4 V, G = ma, TYP. µs d G /dt = ma/µs, R L = 3 /9 DocD463 Rev 1

3 T16H Characteristics Table 4. Static characteristics Symbol Test conditions Value Unit V TM TM =.5 A, t p = 38 µs T j = 5 C 1.55 V V to Threshold voltage T j = 15 C.8 V R d Dynamic resistance T j = 15 C MAX. m DRM, T j = 5 C 5 µa V D = V DRM, V R = V RRM RRM T j = 15 C ma Table 5. Thermal resistance Symbol Parameter Value Unit R th(j-c) Junction to case (AC) 1. C/W R th(j-a) Junction to ambient (AC) 6 C/W Figure 1. Maximum power dissipation versus average on-state current (full cycle) P(W) T(RMS) (A) 18 Figure. On-state rms current versus case temperature (full cycle) T(RMS) (A) T ( C) C Figure 3. On-state rms current versus ambient temperature (free air convection) Figure 4. Relative variation of thermal impedance versus pulse duration T(RMS) (A) 1.E+ K = [Z th / R th] Z th(j-c).5 Z th(j-a) E T ( C) a t p(s) 1.E- 1.E-3 1.E- 1.E-1 1.E+ 1.E+1 1.E+ 1.E+3 1.E+4 DocD463 Rev 1 3/9

4 Characteristics T16H Figure 5. Relative variation of gate trigger current and voltage versus junction temperature (typical values) GT,V GT [T j ]/ GT,V GT [T j =5 C] 3. Figure 6. Relative variation of holding and latching current versus junction temperature (typical values).5, [T ] /, [T = 5 C] H L j H L j.5 GT Q GT Q1-Q 1. V GT 1. L.5.5. T j ( C) T ( C) j H Figure 7. Relative variation of dv/dt immunity versus junction temperature (typical values) dv/dt [T j] / dv/dt [T j = 15 C] T ( C) j V D=V R=4 V Figure 9. Relative variation of critical rate of decrease of main current (di/dt)c versus reapplied (dv/dt)c (d/dt)c[(dv/dt)c]/specified(d/dt)c 3 1 (dv/dt) c (V/µs) Figure 8. Relative variation of critical rate of decrease of main current (di/dt)c versus junction temperature (typical values) (dl/dt) c [T ] / (dl/dt) c [T = 15 C] j j T ( C) j Figure. Surge peak on-state current versus number of cycles TSM (A) Repetitive T C=133 C Non repetitive T j initial=5 C t = ms One cycle Number of cycles 1 4/9 DocD463 Rev 1

5 T16H Characteristics Figure 11. Non repetitive surge peak on-state current for a sinusoidal pulse with width tp < ms, and corresponding value of ²t Figure 1. On-state characteristics (maximum values) TSM (A), ²t (A²s) d/dt limitation: A/µs T j initial=5 C TM (A) TSM ²t sinusoidal pulse with width t < ms p t (ms) p T j =15 C T j =5 C VTM (V) T j max : V to =.8 V R d = m Figure 13. Relative variation of leakage current versus junction temperature for different values of blocking voltage (typical values) 1.E+, [T ; V, V ] /, [T = 15 C; 6 V] DRM RRM j DRM RRM DRM RRM j V DRM =V RRM =6 V 1.E-1 V DRM =V RRM =4 V 1.E- V DRM =V RRM = V 1.E-3 1.E-4 T ( C) j DocD463 Rev 1 5/9

6 Package information T16H Package information Epoxy meets UL94, V Recommended torque value:.4 to.6 N m n order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 14. TO-AB dimension definitions B C Ø b L F A 4 l3 a1 c l a e b1 M c1 6/9 DocD463 Rev 1

7 T16H Package information Ref. Table 6. TO-AB dimension values Millimeters Dimensions nches Min. Typ. Max. Min. Typ. Max. A a a B b b C c c e F Ø L l l M.6. DocD463 Rev 1 7/9

8 Ordering information T16H 3 Ordering information Figure 15. Ordering information scheme Triac series Current 16 = 16 A rms Gate sensitivity = ma High temperature T 16 H - 6 T Voltage 6 = 6 V Package T = TOAB Delivery mode Blank = tube Table 7. Ordering information Order code Marking Package Weight Base qty Delivery mode T16H-6T T16H-6T TO-AB.3 5 Tube 4 Revision history Table 8. Document revision history Date Revision Changes 31-May-13 1 First issue. 8/9 DocD463 Rev 1

9 T16H Please Read Carefully: nformation in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. f any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWSE SET FORTH N ST S TERMS AND CONDTONS OF SALE ST DSCLAMS ANY EXPRESS OR MPLED WARRANTY WTH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS NCLUDNG WTHOUT LMTATON MPLED WARRANTES OF MERCHANTABLTY, FTNESS FOR A PARTCULAR PURPOSE (AND THER EQUVALENTS UNDER THE LAWS OF ANY JURSDCTON), OR NFRNGEMENT OF ANY PATENT, COPYRGHT OR OTHER NTELLECTUAL PROPERTY RGHT. ST PRODUCTS ARE NOT AUTHORZED FOR USE N WEAPONS. NOR ARE ST PRODUCTS DESGNED OR AUTHORZED FOR USE N: (A) SAFETY CRTCAL APPLCATONS SUCH AS LFE SUPPORTNG, ACTVE MPLANTED DEVCES OR SYSTEMS WTH PRODUCT FUNCTONAL SAFETY REQUREMENTS; (B) AERONAUTC APPLCATONS; (C) AUTOMOTVE APPLCATONS OR ENVRONMENTS, AND/OR (D) AEROSPACE APPLCATONS OR ENVRONMENTS. WHERE ST PRODUCTS ARE NOT DESGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RSK, EVEN F ST HAS BEEN NFORMED N WRTNG OF SUCH USAGE, UNLESS A PRODUCT S EXPRESSLY DESGNATED BY ST AS BENG NTENDED FOR AUTOMOTVE, AUTOMOTVE SAFETY OR MEDCAL NDUSTRY DOMANS ACCORDNG TO ST PRODUCT DESGN SPECFCATONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALFED ARE DEEMED SUTABLE FOR USE N AEROSPACE BY THE CORRESPONDNG GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. nformation in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 13 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - ndia - srael - taly - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocD463 Rev 1 9/9

T1620T-8I, T1635T-8I. Snubberless 16 A Triac. Features. Applications. Description

T1620T-8I, T1635T-8I. Snubberless 16 A Triac. Features. Applications. Description Snubberless 16 A Triac Datasheet production data Features High static and dynamic commutation Three quadrants Snubberless device Package is RoHS (2002/95/EC) compliant Tab insulated, voltage = 2500 V rms