SMP30 TRISIL FOR TELECOM EQUIPMENT PROTECTION
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1 SMP3 TRISIL FOR TELECOM EQUIPMENT PROTECTION FEATURES Bidirectional crowbar protection Voltage range from 62V to 27V Low capacitance from 1pF to 2pF 5V Low leakage current: I R = 2µA max. Holding current: I H = 15 ma min. Repetitive peak pulse current: I PP = 3 A (1/ µs) MAIN APPLICATIONS Telecommunication equipment such as: Analog and digital line cards (xdsl, T1/E1, ISDN...). Terminals (phone, fax, modem...) and central office equipment. DESCRIPTION The SMP3-xxx series has been designed to protect telecommunication equipment against lightning and transient induced by AC power lines. The package / die size ratio has been optimized by using the SMA package. BENEFITS Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet various standards such as UL195, IEC95 / CSA C22.2, UL1459 and FCC part 68. Trisils have UL94 V approved resin. SMA package is JEDEC registered (DO-214AC). Trisils are UL497B approved (file: E136224). Table 1: Order Codes Part Number SMP3-62 SMP3-68 SMP3- SMP3-12 SMP3-13 SMP3-18 SMP3-2 SMP3-22 SMP3-24 SMP3-27 SMA (JEDEC DO-214AC) Figure 1: Schematic Diagram Marking QAA QAB QAC QAD QAE QAF QAG QAH QAI QAJ December 24 REV. 6 1/9
2 Table 2: In compliance with the following standards STANDARD GR-189 Core First level GR-189 Core Second level GR-189 Core Intra-building ITU-T-K2/K21 ITU-T-K2 (IEC6-4-2) VDE433 VDE878 IEC6-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B Peak Surge Voltage (V) 25 Waveform Voltage 2/1 µs 1/ µs Required peak current (A) 5 Current waveform 2/1 µs 1/ µs Minimum serial resistor to meet standard (Ω) 5 2/1 µs 5 2/1 µs /1 µs 2/1 µs /7 µs 1/6 ns 1/7 µs 1.2/5 µs 1/7 µs 1.2/5 µs 1/16 µs 1/56 µs /31 µs ESD contact discharge ESD air discharge /31 µs 1/2 µs 5/31 µs 8/2 µs 1/16 µs 1/56 µs 9/72 µs 25 5/32 µs Table 3: Absolute Ratings (T amb = 25 C) Symbol Parameter Value Unit I PP Repetitive peak pulse current (see figure 2) 1/ µs 8/2 µs 1/56 µs 5/31 µs 1/16 µs 1/2 µs 2/1 µs I FS Fail-safe mode : maximum current (note 1) 8/2 µs 2.5 ka I TSM Non repetitive surge peak on-state current (sinusoidal) t =.2 s t = 1 s t = 2 s t = 15 mn I 2 t I 2 t value for fusing t = 16.6 ms t = 2 ms T stg T j Storage temperature range Maximum junction temperature to T L Maximum lead temperature for soldering during 1 s. 26 C Note 1: in fail safe mode, the device acts as a short circuit. A A A 2 s C 2/9
3 Table 4: Thermal Resistances Symbol Parameter Value Unit R th(j-a) Junction to ambient (with recommended footprint) 12 C/W R th(j-l) Junction to leads 3 C/W Table 5: Electrical Characteristics (T amb = 25 C) Symbol Parameter V RM V BR V BO I RM I PP I BO I H V R Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Continuous reverse voltage I R C Leakage current at V R Capacitance Types Dynamic Static I V RM I V R I V BO V I H C C BO max. max. max. max. max. min. typ. typ. note1 note 2 note 3 note 4 note 5 note 6 µa V µa V V V ma ma pf pf SMP SMP SMP SMP SMP SMP SMP SMP SMP SMP Note 1: IR measured at VR guarantee VBR min VR Note 2: see functional test circuit 1 Note 3: see test circuit 2 Note 4: see functional holding current test circuit 3 Note 5: VR = 5V bias, VRMS=1V, F=1MHz Note 6: VR = 2V bias, VRMS=1V, F=1MHz 3/9
4 Figure 2: Pulse waveform Figure 3: Non repetitive surge peak on-state current versus overload duration %I PP Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) 25 2 I TSM(A) F=5Hz tr tp t 5 t(s) 1E-2 1E-1 1E+ 1E+1 1E+2 1E+3 Figure 4: On-state voltage versus on-state current (typical values) Figure 5: Relative variation of holding current versus junction temperature I (A) T Tj=25 C 2 V T(V) I [T ] / I [T =25 C] H j H j.2. T j( C) Figure 6: Relative variation of breakover voltage versus junction temperature Figure 7: Relative variation of leakage current versus junction temperature (typical values) 1.1 V [T ] / V [T =25 C] BO j BO j 2 I [T ] / I [T =25 C] RM j RM j V R=VRM V V.9 T j( C) T j( C) /9
5 Figure 8: Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35µm, recommended pad layout) Figure 9: Relative variation of junction capacitance versus reverse voltage applied (typical values) 1E+2 Z th(j-a) ( C/W) Zth(j-a) C[V R] / C[V R=5V] Tj=25 C F=1MHz VRMS=1V 1E E+ t p(s) 1E-1 1E-3 1E-2 1E-1 1E+ 1E+1 1E+2 5E V R(V) Figure 1: Test circuit 1 for dynamic I BO and V BO parameters V / µs, di/dt < 1 A / µs, Ipp = 3A 2 Ω 45 Ω 83 Ω 46 µh U 1 µf 66 Ω 47 Ω.36 nf KeyTek 'System 2' generator with PN246I module 1 kv / µs, di/dt < 1 A / µs, Ipp = 1 A 26 µh 25 Ω 47 Ω 46 µh U 6 µf 12 Ω KeyTek 'System 2' generator with PN246I module 5/9
6 Figure 11: Test circuit 2 for I BO and V BO parameters K ton = 2ms R1 = 14Ω R2 = 24Ω 22V 5Hz Vout DUT VBO measurement 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 2ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with V BO < 2V V OUT = 25 V RMS, R1 = 14Ω Device with VBO 2V V OUT = 48 V RMS, R2 = 24Ω Figure 12: Test circuit 3 for dynamic I H parameter R Surge generator V BAT =-48V D.U.T This is a GO-NOGO test which allows to confirm the holding current (I H) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current I PP = 1A, 1/µs. 3/ The D.U.T. will come back off-state within 5ms maximum. 6/9
7 Figure 13: Ordering Information Scheme SMP 3 - xxx Trisil Surface Mount Repetitive Peak Pulse Current 3 = 3A Voltage 62 = 62V Figure 14: SMA Package Mechanical data DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A A b c E E D L Figure 15: Foot Print Dimensions (in millimeters) /9
8 Table 6: Ordering Information Part Number Marking Package Weight Base qty Delivery mode SMP3-62 QAA SMP3-68 QAB SMP3- QAC SMP3-12 QAD SMP3-13 QAE SMP3-18 QAF SMA.6 g 5 Tape & reel SMP3-2 QAG SMP3-22 QAH SMP3-24 QAI SMP3-27 QAJ Table 7: Revision History Date Revision Description of Changes November-22 4B Last update. 1-Nov Dec-24 6 SMA package dimensions update. Reference A1 max. changed from 2.7mm (.16 inc.) to 2.3mm (.8 inc.). Figure 7 text legend corrected from... reverse voltage applied to... junction capacitance. 8/9
9 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 24 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 9/9
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