THBTxxx11D TRIPOLAR OVERVOLTAGE PROTECTION FOR TELECOM LINE. Application Specific Discretes A.S.D. 8 TIP 7 GND 6 GND 5 RING GND 3 RING FEATURES
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1 Application Specific Discretes A.S.D. THBTxxx11D TRIPOLAR OEROLTAGE PROTECTION FOR TELECOM LINE FEATURES n BIDIRECTIONAL CROWBAR PROTECTION BETWEEN TIP AND, AND AND BETWEEN TIP AND. n PEAK PULSE CURRENT : I PP = 30A for 10/1000µs surge. n HOLDING CURRENT : I H = 150mA. n AAILABLE IN SO8 PACKAGES. n LOW DYNAMIC BREAKOER OLTAGE. DESCRIPTION Dedicated to telecommunication equipment protection, these devices provide a triple bidirectional protection function. They ensure the same protection capability with the same breakdown voltage both in longitudinal mode and transversal mode. A particular attention has been given to the internal wire bonding. The 4-point configuration ensures a reliable protection, eliminating overvoltages introduced by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transient overvoltages. Dynamic characteristics have been defined for several types of surges, in order to meet the SLIC maximum ratings. SO-8 SCHEMATIC DIAGRAM TIP TIP 7 6 COMPLIES WITH BELLCORE STANDARDS : TR-NWT : 10/1000µs /10µs 2500 (first level) 2/10µs (second level) with line series resistors of 56Ω TM: ASD is trademarks of STMicroelectronics. October Ed: 7A 1/9
2 ABSOLUTE MAXIMUM RATINGS (T amb =25 C) Symbol Parameter alue Unit I PP Peak pulse current (see note 1) 10/1000 µs 30 A I TSM T stg T j Non repetitive surge peak on-state current (F=50Hz) Storage temperature range Maximum operating junction temperature tp=10ms t=1s to T L Maximum lead temperature for soldering during 10s 260 C A C C Note 1 : Pulse waveform : 10/1000µs t r =10µs t p =1000µs %I PP tr tp t TEST CIRCUITS FOR I PP Longitudinal mode TIP IPP/2 R P See test circuit 3 IPP/2 R P THBT Transversal mode TIP or I PP R P THBT See test circuit 3 THERMAL RESISTANCES Symbol Parameter alue Unit R th (j-a) Junction to ambient 170 C/W 2/9
3 ELECTRICAL CHARACTERISTICS (T amb = 25 C) Symbol Parameter RM I RM R BR BO I H I BO F I PP C Stand-off voltage Leakage current at stand-off voltage Continuous Reverse voltage Breakdown voltage Breakover voltage Holding current Breakover current Forward voltage drop Peak pulse current Capacitance I PP I BO I H I R I THBTxxx11D RM BR BO STATIC PARAMETERS Type I RM I R I BO I H C max. max. note 1 max. note 2 min. max. min note 3 max note 4 µa µa ma ma ma pf THBT15011D THBT16011D THBT20011D THBT27011D Note 1: I R mesuared at R guarantees BR > R Note 2: Measured at 50 Hz (1 cycle) test circuit 1. Note 3: See the reference test circuit 2. Note 4: R = 1, F = 1MHz. DYNAMIC BREAKOER OLTAGES (Transversal mode) Type Symbol Test conditions (see note 5) Maximum Unit THBT15011D BO 10/700µs 1.5k R p =10Ω I PP =30A 1.2/50µs 1.5k R p =10Ω I PP =30A 2/10µs 2.5k R p =62Ω I PP =38A THBT16011D BO 10/700 µ s 1.5k R p =10Ω I PP =30A 1.2/50µs 1.5k R p =10Ω I PP =30A 2/10µs 2.5k R p =62Ω I PP =38A THBT20011D BO 10/700 µ s 1.5k R p =10Ω I PP =30A 1.2/50µs 1.5k R p =10Ω I PP =30A 2/10µs 2.5k R p =62Ω I PP =38A THBT27011D BO 10/700 µ s 1.5k R p =10Ω I PP =30A 1.2/50µs 1.5k R p =10Ω I PP =30A 2/10µs 2.5k R p =62Ω I PP =38A Note 5 : See test circuit 3 for BO dynamic parameters; R p is the protection resistor located on the line card /9
4 TEST CIRCUIT 1 for I BO and BO parameters : Auto Transformer 220/2A static relay. tp =20ms R1 140 R out K I BO measure D.U.T BO measure Transformer 220/800 5A TEST PROCEDURE : n n Pulse Test duration (tp = 20ms): - For Bidirectional devices = Switch K is closed - For Unidirectional devices = Switch K is open. OUT Selection - Device with BO < 200 olt - OUT = 250 RMS,R 1 = 140 Ω. - Device with BO 200 olt - OUT = 480 RMS,R 2 = 240 Ω. TEST CIRCUIT 2 for I H parameter. R BAT =-48 D.U.T. - P Surge generator This is a GO-NOGO test which allows to confirm the holding current (I H ) level in a functional test circuit. TEST PROCEDURE : n 1) Adjust the current level at the I H value by short circuiting the AK of the D.U.T. 2) Fire the D.U.T with a surge Current : Ipp = 10A, 10/1000 µs. 3) The D.U.T will come back off-state within 50 ms max. 4/9
5 TEST CIRCUIT 3 for I PP and BO parameters : (P is defined in no load condition) L R 2 R4 TIP R3 P C1 R 1 C2 Pulse (µs) p C 1 C 2 L R 1 R 2 R 3 R 4 I PP R p t r t p () (µf) (nf) (µh) (Ω) (Ω) (Ω) (Ω) (A) (Ω) /9
6 Fig. 1: Surge peak current versus overload duration. I TSM(A) F=50Hz Tj initial=25 C t(s) 0 1E-2 1E-1 1E+0 1E+1 1E+2 1E+3 APPLICATION NOTE 1 Connect pins 2, 3, 6 and 7 to Ground in order to guarantee a good surge current capability for long duration disturbances. TIP 1 8 TIP 2 In order to take advantage of the" 4-point structure of the THBT, the TIP and lines have to cross the device. In this case, the device will eliminate the overvoltages generated by the parasitic inductances of the wiring (Ldi/dt), especially for very fast transients /9
7 APPLICATION CIRCUIT : 1 - Line card protection THBTxxx11D GENERATOR - BAT LINE A PTC T E S T R E L A Y S THBTxxxD RELAY 220 nf SLIC LINE B PTC LCP1511D 2 - Protection for telephone set with ground key LA HOOK SPEECH DIALING ER LB E THBTxxxD GROUND KEY 7/9
8 ORDER CODE BIDIRECTIONAL TRISIL BREAKDOWN OLTAGE THBT D RL ERSION PACKAGING: RL = tape and reel. = tube. LOW DYNAMIC CHARACTERISTICS. PACKAGE: 1 = SO8 Plastic. MARKING Types Package Marking THBT15011D SO-8 BT151D THBT16011D SO-8 BT161D THBT20011D SO-8 BT201D THBT27011D SO-8 BT271D MARKING : Logo, Date Code, Part Number. 8/9
9 PACKAGE MECHANICAL DATA. SO-8 Plastic b e e3 D 8 1 L c1 C a2 A a1 S E M 5 F 4 FOOT PRINT DIMENSIONS (in millimeters) a3 b1 REF. DIMENSIONS Millimetres Inches Min. Typ. Max. Min. Typ. Max. A a a b b C c1 45 (typ) D E e e F L M S 8 (max) Packaging : Products supplied in antistatic tubes or tape and reel. Weight : g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners STMicroelectronics - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States 9/9
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STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
SMA4F. High junction temperature Transil. Features. Description. Complies with the following standards
High junction temperature Transil Features ECOPACK2 halogen-free component Peak pulse power: 400 W (10/1000 µs) 3 kw (8/20 µs) Stand off voltage: 5 V Unidirectional type Low clamping voltage versus standard
LM723 HIGH PRECISION VOLTAGE REGULATOR
HIGH PRECISION VOLTAGE REGULATOR INPUT VOLTAGE UP TO 40V OUTPUT VOLTAGE ADJUSTABLE FROM 2 TO 37V POSITIVE OR NEGATIVE SUPPLY OPERATION SERIES, SHUNT, SWITCHING OR FLOATING OPERATION OUTPUT CURRENT TO 150mA
LDRxxyy VERY LOW DROP DUAL VOLTAGE REGULATOR
VERY LOW DROP DUAL VOLTAGE REGULATOR OUTPUT CURRENT 1 UP TO 500mA OUTPUT CURRENT 2 UP TO 1.0A LOW DROPOUT VOLTAGE 1 (0.3V @ I O =500mA) LOW DROPOUT VOLTAGE 2 (0.4V @ I O =1A) VERY LOW SUPPLY CURRENT (TYP.50µA
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. SMBJ5.0A-TR, A-TR SMBJ188A-TR, A-TR TRANSIL Features Peak pulse power: 600
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6 V power Schottky silicon carbide diode Features No or negligible reverse recovery Switching behavior independent of temperature Particularly suitable in PFC boost diode function Description The SiC diode
ESDALCL6-4P6A. Multi-line low capacitance and low leakage current ESD protection. Features. Applications. Description
Multi-line low capacitance and low leakage current ESD protection Features Datasheet production data Diode array topology: 4 lines protection Low leakage current: 10 na at 3 V 1 na at 1 V Very low diode
100 A Tj initial = T amb -65to T L Maximum lead temperature for soldering during 10 s. 260 C
SMBJ5.0A-TR,CA-TR SMBJ188A-TR,CA-TR TRANSIL TM FEATURES PEAK PULSE POWER : 600 W (10/1000µs) STAND OFF VOLTAGE RANGE : From 5V to 188V. UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME
DC LINE TERMINATION ACT DCT V-
L3845 TRUNK INTERFACE ON CHIP POLARITY GUARD MEETS DC LINE CHARACTERISTICS OF EITHER CCITT AND EIA RS 464 SPECS PULSE FUNCTION HIGH AC IMPEDANCE OFF HOOK-STATUS DETECTION OUTPUT LOW EXTERNAL COMPONENT
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER
STTH22TV TURBO 2 ULTRAAST HIGH VOLTAGE RECTIIER MAIN PRODUCT CHARACTERISTICS I (AV) Up to 2 x 12 A V RRM 2 V T j 15 C V (typ).75 V t rr (typ) 41 ns EATURES AND BENEITS Suited for SMPS Very Low orward Losses
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS. 2x3A 200 V. T j(max) 150 C. V F(max ) 0.99 V.
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM 2x3A 200 V FEATURES Suited for SMPS Low losses Low forward and reverse recovery time High surge current
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS. 2x3A 200 V. T j(max) 150 C. V F(max ) 0.99 V.
STPR620CT/CF/CFP ULTRA FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I F(AV) V RRM 2x3A 200 V T j(max) 150 C V F(max ) t rr(max) 0.99 V 30 ns FEATURES Suited for SMPS Low losses Low forward
HCF4070B QUAD EXCLUSIVE OR GATE
QUAD EXCLUSIVE OR GATE MEDIUM-SPEED OPERATION t PHL =t PLH = 70ns (Typ.) at CL = 50 pf and V DD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT I I
Table 3: Absolute Ratings (limiting values) Symbol Parameter Value Unit V RRM Repetitive peak reverse voltage 40 V I F(RMS) RMS forward voltage 7 A
SPS4 POWER SCHOKY RECIFIER able : Main Product Characteristics I F(AV) A V RRM 4 V j (max) 5 C V F (max).5 V FEAURES AND BENEFIS Very small conduction losses Negligible switching losses Low forward voltage
L4941 VERY LOW DROP 1A REGULATOR
VERY LOW DROP 1A REGULATOR LOW DROPOUT VOLTAGE (450mV Typ. at 1A) VERY LOW QUIESCENT CURRENT THERMAL SHUTDOWN SHORT CIRCUIT PROTECTION REVERSE POLARITY PROTECTION DESCRIPTION The L4941 is a three terminal
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INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
IRF540 N-CHANNEL 100V Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.055 Ω - 22A TO-220 LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D IRF540 100 V
Table 3: Absolute Maximum Ratings Symbol Parameter Value Unit I T(RMS) RMS on-state current (full sine wave) T l = 50 C 0.8 A
查询 2BL2 供应商 捷多邦, 专业 PCB 打样工厂,24 小时加急出货 STANDARD 0.8A TRIAC Table 1: Main Features Symbol Value Unit I T(RMS) 0.8 A V DRM /V RRM 600 V I GT (Q1 ) 5 ma G A2 A1 DESCRIPTION The is suitable for low power AC
BTA10 and BTB10 Series
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STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET
STD5NM50 STD5NM50-1 N-CHANNEL 500V - 0.7Ω - 7.5A DPAK/IPAK MDmesh Power MOSFET TYPE V DSS R DS(on) I D STD5NM50 STD5NM50-1 500V 500V
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Low forward voltage TVS: Transky Main applications Power rail ESD transient over-voltages and reverse voltages protection for 5 and 12 V supplied IC s Description The Transky is designed specifically for
2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal
STD7NS20 STD7NS20-1 N-CHANNEL 200V Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET
TYPE V DSS R DS(on) I D STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA STD7NS20 STD7NS20-1 200 V 200 V < 0.40 Ω < 0.40 Ω 7A 7A TYPICAL R DS (on) = 0.35
STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR ST93003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY
HCF4020B RIPPLE-CARRY BINARY COUNTER/DIVIDERS 14 STAGE
RIPPLE-CARRY BINARY COUNTER/DIVIDERS 14 STAGE MEDIUM SPEED OPERATION: 16MHz (Typ.) at V DD = 10V FULLY STATIC OPERATION COMMON RESET BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS
STPS1045B-Y. Automotive power Schottky rectifier. Features. Description
STPS45B-Y Automotive power Schottky rectifier Features Negligible switching losses Low forward voltage drop Low capacitance High reverse avalanche surge capability Avalanche specification AEC-Q qualified
ST2111FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Features. Applications. Internal Schematic Diagram. Description.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY (1500V) HIGH SWITCHING SPEED
STS7PF30L P-CHANNEL 30V Ω - 7ASO-8 STripFET II POWER MOSFET
TYPE V DSS R DS(on) I D STS7PF30L P-CHANNEL 30V - 0.016Ω - 7ASO-8 STripFET II POWER MOSFET PRELIMINARY DATA STS7PF30L 30 V < 0.021 Ω 7A TYPICAL R DS (on) = 0.016Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE
STPS140Z-Y. Automotive power Schottky rectifier. Features. Description
Automotive power Schottky rectifier Datasheet production data Features Very small conduction losses Negligible switching losses Extremely fast switching ECOPACK 2 compliant component AEC-Q101 qualified
MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS
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ST8812FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED TIGHT hfe CONTROL LARGE R.B.S.O.A. FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING
STP08CL596 LOW VOLTAGE 8-BIT CONSTANT CURRENT LED SINK DRIVER
LOW VOLTAGE 8-BIT CONSTANT CURRENT LED SINK DRIVER LOW VOLTAGE POWER SUPPLY DOWN TO 3V 8 CONSTANT CURRENT OUTPUT CHANNELS ADJUSTABLE OUTPUT CURRENT THROUGH EXTERNAL RESISTOR SERIAL DATA IN/PARALLEL DATA
SMM4F12AVCL. 400 W low clamping voltage Transil. Features. Description. Complies with the following standards
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N-CHANNEL 550V @ Tjmax - 0.20Ω - 20ATO-247 MDmesh MOSFET TYPE STW20NM50 550V < 0.25Ω 20 A TYPICAL R DS (on) = 0.20Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND
Distributed by: www.jameco.com 1-800-831-4242 The content and copyrights of the attached material are the property of its owner. BTA16, BTB16 and T16 Series SNUBBERLESS, LOGIC LEVEL & STANDARD 16A TRIACS