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1 Distributed by: The content and copyrights of the attached material are the property of its owner.

2 SMBJ5.0A-TR, A-TR SMBJ188A-TR, A-TR TRANSIL Features Peak pulse power: 600 W (10/1000 µs) Stand off voltage range: from 5 V to 188 V Uni and bidirectional types Low clamping factor Fast response time JEDE registered package outline Description The SMBJ series are TRANSIL diodes designed specifically for protecting sensitive equipment against transient overvoltages. Transil diodes provide high overvoltage protection by clamping action. Their instantaneous response to transient overvoltages makes them particularly suited to protect voltage sensitive devices such as MOS Technology and low voltage supplied I s. K Order code Part number A Unidirectional Bidirectional SMB (JEDE DO-214AA) Marking SMBJxxxA-TR See pages 2 and 3 SMBJxxxA-TR See pages 2 and 3 Table 1. Absolute maximum ratings (T amb = 25 ) Symbol Parameter Value Unit P PP Peak pulse power dissipation (1) T j initial = T amb 600 W P Power dissipation on infinite heatsink T amb = 50 5 W I FSM Non repetitive surge peak forward current for unidirectional types t p = 10 ms T j initial = T amb 100 A T stg Storage temperature range -65 to +175 T j Maximum junction temperature 150 T L Maximum lead temperature for soldering during 10 s For a surge greater than the maximum values, the diode will fail in short-circuit. Table 2. Thermal resistances Symbol Parameter Value Unit R th (j-l) Junction to leads 20 /W R th (j-a) Junction to ambient on printed circuit on recommended pad layout 100 /W February 2006 Rev 5 1/

3 Electrical characteristics (Tamb = 25 ) 1 Electrical characteristics (Tamb = 25 ) Symbol Parameter I I V RM V BR Stand-off voltage Breakdown voltage I F I PP V L I RM I PP lamping voltage Leakage VRM Peak pulse current V L V BR V RM I RM I R V F V V L V BR V RM I R I RM IRM I R V V RM V BR V L αt Voltage temperature coefficient I PP Unidirectional I PP Bidirectional V F Forward voltage drop Types I RM V R min. (1) V PP 10/1000 µs V PP 8/20 µs αt (2) typ. (3) Unidirectional Mark Bidirectional Mark µa V V ma V A V A 10-4/ pf SMBJ5.0A-TR BUZ SMBJ5.0A-TR BBZ SMBJ6.0A-TR BUA SMBJ6.0A-TR BBA SMBJ6.5A-TR BUB SMBJ6.5A-TR BBB SMBJ8.5A-TR BU SMBJ8.5A-TR BB SMBJ10A-TR BUD SMBJ10A-TR BBD SMBJ12A-TR BUE SMBJ12A-TR BBE SMBJ13A-TR BUF SMBJ13A-TR BBF SMBJ15A-TR BUG SMBJ15A-TR BBG SMBJ16A-TR UG SMBJ16A-TR BG SMBJ18A-TR BUH SMBJ18A-TR BBH SMBJ20A-TR BUI SMBJ20A-TR BBI SMBJ22A-TR BVA SMBJ22A-TR BH SMBJ24A-TR BUJ SMBJ24A-TR BBJ SMBJ26A-TR BUK SMBJ26A-TR BBK SMBJ28A-TR BUL SMBJ28A-TR BBL SMBJ30A-TR BUM SMBJ30A-TR BBM SMBJ33A-TR BUN SMBJ33A-TR BBN SMBJ40A-TR UJ SMBJ40A-TR BJ SMBJ48A-TR BUW SMBJ48A-TR BBW SMBJ58A-TR BUO SMBJ58A-TR BBO SMBJ70A-TR UM SMBJ70A-TR BM /10 Rev 5

4 Electrical characteristics (Tamb = 25 ) Types I RM V R min. (1) V PP 10/1000 µs V PP 8/20 µs αt (2) typ. (3) SMBJ85A-TR BUQ SMBJ85A-TR BBQ SMBJ100A-TR UQ SMBJ100A-TR BQ SMBJ130A-TR BUS SMBJ130A-TR BBS SMBJ154A-TR BUT SMBJ154A-TR BBT SMBJ170A-TR BUU SMBJ170A-TR BBU SMBJ188A-TR BUV SMBJ188A-TR BBV Pulse test : t p <50ms. 2. V BR = αt * (T amb -25) * V BR (25 ). 3. V R = 0 V, F = 1 MHz. For bidirectional types, capacitance value is divided by 2. Pulse waveform 10/1000 µs 10 µs 1000 µs Figure 1. Peak pulse power dissipation versus initial junction temperature (printed circuit board). Figure 2. P PP (W) Peak pulse power versus exponential pulse duration. Rev 5 3/10

5 Electrical characteristics (Tamb = 25 ) Figure 3. lamping voltage versus peak pulse current. VL (V) Tj initial = 25 SMBJ188A SMBJ130A SMBJ58A SMBJ33A SMBJ18A SMBJ8.5A SMBJ5.0A Ipp (A) Exponential waveform tp = 20 µs tp = 1 ms tp = 10 ms Note: The curves of figure 3 are specified for a junction temperature of 25 before surge. The given results may be extrapolated for other junction temperatures by using the following formula : VBR = αt * [T amb -25] * V BR (25 ) For intermediate voltages, extrapolate the given results. Figure 4. (pf) apacitance versus reverse applied voltage for unidirectional types (typical values) SMBJ 5.0A SMBJ 13A SMBJ 26A SMBJ 58A SMBJ 188A Tj = 25 F = 1 MHz Figure 5. (pf) apacitance versus reverse applied voltage for bidirectional types (typical values) SMBJ5.0 A SMBJ SMBJ SMBJ SMBJ 13 A 26 A 58 A 188 A Tj = 25 F = 1 MHz V R (V) V R (V) 500 4/10 Rev 5

6 Electrical characteristics (Tamb = 25 ) Figure 6. Peak forward voltage drop versus peak forward current (typical values for unidirectional types). Figure 7. Transient thermal impedance junction-ambient versus pulse duration. Mounting on FR4 P Board with Recommended pad layout. Figure 8. Relative variation of leakage current versus junction temperature. 5/10 Rev 5

7 Order code 2 Order code SM B J 85 A - TR Surface Mount Peak Pulse Power B = SMB package Stand off voltage 85 = 85 V Type A = Unidirectinal A = Bidirectional Packaging TR = Tape & reel 6/10 Rev 5

8 Package mechanical data SMB (plastic) 3 Package mechanical data SMB (plastic) Table 3. Dimensions E1 Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. D A A b E c E c A1 E L A2 b D L Figure 9. Footprint dimensions (millimeter) Figure 10. Marking 5.25 athode bar ( unidirectional devices only ) 2.22 e3 x x x z y w w E : EOPAK (Leadfree ) mention XXX : Marking Z : Manufacturing location Y : Year WW : week In order to meet environmental requirements, ST offers these devices in EOPAK packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDE Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. EOPAK is an ST trademark. EOPAK specifications are available at: 7/10 Rev 5

9 Ordering information 4 Ordering information Part number Marking Package Weight Base qty Delivery mode SMBJxxxA-TR SMBJxxxA-TR See pages 2 and 3. See pages 2 and 3. SMB 0.12 g 5000 Tape and reel SMB 0.12 g 5000 Tape and reel 5 Revision history Table 4. Document revision history Date Revision hanges Oct Previous issue 10-Feb Reformatted to current template. Added directional (uni and bi) indications to graphics. Added EOPAK statement. 8/10 Rev 5

10 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - anada - hina - zech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 9/10 Rev 5

11 10/10 Rev 5

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