MAXIMUM ALLOWABLE RATINGS

Transcription

1 PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Designed for traction and industrial applications Mean on-state current ITA Repetitive peak off-state voltage DRM Repetitive peak reverse voltage RRM Turn-off time tq DRM, RRM, oltage code Tj, C Type Т A , 200, 250, 320, 320, 400, 500 µs MAXIMUM ALLOWABLE RATINGS Symbols and parameters ON-STATE ITA ITRMS Mean on-state current RMS on-state current Units alues A A ITSM Surge on-state current Tc=85 ºC, Double side cooled 180 half-sine wave; 50 Hz Tj=Tj max Tj=25 C 180 half-sine wave; 50 Hz (tp=10 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s Tj=Tj max Tj=25 C 180 half-sine wave; 60 Hz (tp=8.3 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s Tj=Tj max Tj=25 C 180 half-sine wave; 50 Hz (tp=10 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s Tj=Tj max Tj=25 C 180 half-sine wave; 60 Hz (tp=8.3 ms); single pulse; D=R=0 ; tgp=50 s; dig/dt 1 A/ s ka I2t Test conditions A2s.103 Safety factor BLOCKING DRM, RRM Repetitive peak off-state and Repetitive peak reverse voltages DSM, RSM Non-repetitive peak off-state and Non-repetitive peak reverse voltages D, R Direct off-state and Direct reverse voltages 0.75.DRM 0.75.RRM Tj min< Tj <Tj max; 180 half-sine wave; 50 Hz; Gate open Tj min< Tj <Tj max; 180 half-sine wave; 50 Hz;single pulse; Gate open Tj=Tj max; Gate open page 1 of 12

2 TRIGGERING IFGM Peak forward gate current RGM Peak reverse gate voltage PG Gate power dissipation SWITCHING A W Critical rate of rise of on-state current non-repetitive (f=1 Hz) (dit/dt)crit THERMAL Tstg Storage temperature Tj Operating junction temperature MECHANICAL F Mounting force a A/ s 1000 C C kn m/s2 Acceleration Tj=Tj max Tj=Tj max for DC gate current Tj=Tj max; D=0.67.DRM; ITM=2 ITA; tgp=50 s; dig/dt 2 A/ s Device unclamped Device clamped CHARACTERISTICS Symbols and parameters Units alues Conditions ON-STATE TM Peak on-state voltage, max T(TO) rt On-state threshold voltage, max On-state slope resistance, max m IL Latching current, max ma 1500 IH Holding current, max ma 300 ma 150 / s 200, 320, 500, Tj= Tj min Tj=25 C Tj= Tj max ma Tj= Tj min Tj= 25 C Tj= Tj max Tj=Tj max; D=0.67.DRM; Direct gate current Tj= Tj max; ITM=2000 A; Tj=25 C; ITM=3140 A Tj=Tj max; 0.5 ITA < IT < 1.5 ITA Tj=25 C; D=12 ; tgp=50 s; dig/dt 1 A/ s Tj=25 C; D=12 ; Gate open BLOCKING Repetitive peak off-state and Repetitive peak reverse currents, max Critical rate of rise of (dvd/dt)crit off-state voltage1), min TRIGGERING IDRM, IRRM GT Gate trigger direct voltage, max IGT Gate trigger direct current, max GD Gate non-trigger direct voltage, min 0.25 IGD Gate non-trigger direct current, min ma Tj=Tj max; D=DRM; R=RRM Tj=Tj max; D=0.67.DRM; Gate open D=12 ; ID=3 A; Direct gate current SWITCHING tgd Delay time s tq Turn-off time2), max s Qrr trr IrrM Total recovered charge, max Reverse recovery time, typ Peak reverse recovery current, max C s A , 200, 250, 320, 400, Tj=25 C; D=0.4.DRM; ITM=ITA; tgp=50 s; dig/dt 2 A/ s dvd/dt=50 / s; Tj=Tj max; ITM= ITA; dir/dt=-10 A/ s; R=100; D=0.67.DRM Tj=Tj max; ITM= ITA; dir/dt=-10 A/ s; R=100 ; page 2 of 12

3 THERMAL Rthjc Rthjc-A Rthjc-K Thermal resistance, junction to case, max Thermal resistance, case to heatsink, max MECHANICAL w Weight, typ Rthck Ds Surface creepage distance Da Air strike distance PART NUMBERING GUIDE T A2 T Phase Control Thyristor Design version Mean on-state current, A oltage code Critical rate of rise of off-state voltage, / s Turn-off time (dvd/dt=50 / s) Ambient conditions: N normal; T tropical C/W Direct current C/W Direct current g mm (inch) mm (inch) 510 Double side cooled Anode side cooled Cathode side cooled (1.196) (0.710) NOTES N 7 1) Critical rate of rise of off-state voltage Symbol of Group (dvd/dt)crit, / s 2) P2 200 K2 320 E2 500 A Turn-off time (dvd/dt=50 / s) Symbol of Group tq, s T2 160 P2 200 M2 250 K2 320 H2 400 E2 500 page 3 of 12

4 OERALL DIMENSIONS Package type: T.D5 All dimensions in millimeters (inches) The information contained herein is confidential and protected by Copyright. In the interest of product improvement, Proton-Electrotex reserves the right to change data sheet without notice. page 4 of 12

5 Fig 1 On-state characteristics of Limit device Analytical function for On-state characteristic: T A B it C ln(it 1) D it Coefficients for max curves Tj = 25oC Tj = Tj max A B C D On-state characteristic model (see Fig. 1) page 5 of 12

6 Fig 2 Transient thermal impedance Analytical function for Transient thermal impedance junction to case Z thjc for DC: Z thjc t i Ri 1 e i 1 n Where i = 1 to n, n is the number of terms in the series. t = Duration of heating pulse in seconds. Zthjc = Thermal resistance at time t. Ri = Amplitude of pth term. ti = Time constatnt of rth term. DC Double side cooled i Ri, K/W i, s DC Anode side cooled i Ri, K/W i, s DC Cathode side cooled i Ri, K/W i, s Transient thermal impedance junction to case Zthjc model (see Fig. 2) page 6 of 12

7 Fig 3 Gate characteristics Trigger limits Fig 4 - Gate characteristics Power curves page 7 of 12

8 Fig 5 Total recovered charge, Qrr-i (integral) Fig 6 - Recovered charge, Qrr (linear) page 8 of 12

9 Fig 7 Peak reverse recovery current, Irm Fig 8 Maximum recovery time, trr (linear) page 9 of 12

10 Fig 9 On-state power loss (sinusoidal current waveforms) Fig 10 On-state power loss (rectangular current waveforms) page 10 of 12

11 Fig 11 Maximum case temperature DSC (sinusoidal current waveforms) Fig 12 Maximum case temperature DSC (rectangular current waveforms) page 11 of 12

12 Fig 13 Maximum surge and I2t ratings Fig 14 Maximum surge ratings page 12 of 12