Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 26N6500 Unit Max. surge peak forward and reverse blocking voltage

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1 VDRM = 6500 V Phase Control hyristor I(AV)M = 2810 A I(RMS) = 4410 A ISM = A V0 = 1.12 V r = 0.29 m 5SP 26N6500 Doc. No. 5SYA Mar. 14 Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate Blocking Parameter Symbol Conditions 5SP 26N6500 Unit Max. surge peak forward and reverse blocking voltage Max repetitive peak forward and reverse blocking voltage Max crest working forward and reverse voltages VDSM, VRSM VDRM, VRRM VDWM, VRWM tp = 10 ms, f = 5 Hz vj = C, Note V f = 50 Hz, tp = 10 ms, tp1 = 250 s, vj = C, Note 1, Note V V AK V DRM, V RRM t p V Critical rate of rise of commutating voltage dv/dtcrit Exp. to 0.67 VDRM, vj = 125 C 3000 V/µs Forward leakage current IDRM VDRM, vj = 125 C 600 ma Reverse leakage current IRRM VRRM, vj = 125 C 600 ma Note 1: Voltage de-rating factor of 0.11% per C is applicable for vj below +5 C. Note 2: Recommended minimum ratio of V DRM / V DWM or V RRM / V RWM = 2. See App. Note 5SYA Mechanical data Mounting force FM kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 2.9 kg Housing thickness H FM = 90 kn, a = 25 C mm Surface creepage distance DS 56 mm Air strike distance Da 22 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur t p V DWM,V RWM t

2 5SP 26N6500 On-state Average on-state current I(AV)M Half sine wave, c = 70 C 2810 A RMS on-state current I(RMS) 4410 A Peak non-repetitive surge tp = 10 ms, vj = 125 C, ISM current 3 A sine half wave, Limiting load integral I 2 t VD = VR= 0 V, after surge A 2 s Peak non-repetitive surge tp = 10 ms, vj = 125 C, ISM current 3 A sine half wave, Limiting load integral I 2 t VR = 0.6 VRRM, after surge A 2 s On-state voltage V I = 3000 A, vj = 125 C 2 V hreshold voltage V(0) 1.12 V I = 1300 A A, vj = 125 C Slope resistance r 0.29 m Holding current Latching current IH IL vj = 25 C 125 ma vj = 125 C 75 ma vj = 25 C 500 ma vj = 125 C 250 ma Switching Critical rate of rise of on-state current Circuit-commutated turn-off time di/dtcrit tq vj = 125 C, IRM = 3000 A, VD 0.67 VDRM, IFG = 2 A, tr = 0.5 µs Cont. f = 50 Hz Cont. f = 1 Hz vj = 125 C, IRM = 2000 A, VR = 200 V, di/dt = -1.5 A/µs, VD 0.67VDRM, dvd/dt = 20 V/µs 200 A/µs 1000 A/µs 800 µs Reverse recovery charge Qrr vj = 125 C, IRM = 2000 A, µas Reverse recovery current IRM VR = 200 V, di/dt = -1.5 A/µs A Gate turn-on delay time tgd vj = 25 C, VD = 0.4VRM, IFG = 2 A, tr = 0.5 µs 3 µs Doc. No. 5SYA Mar. 14 page 2 of 7

3 5SP 26N6500 riggering Peak forward gate voltage VFGM 12 V Peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V Average gate power loss PG(AV) see Fig. 7 W Gate-trigger voltage VG vj = 25 C 2.6 V Gate-trigger current IG vj = 25 C 400 ma Gate non-trigger voltage VGD VD = 0.4 VDRM, vjmax = 125 C 0.3 V Gate non-trigger current IGD VD = 0.4 VDRM, vjmax = 125 C 10 ma hermal Operating junction temperature range vj 125 C Storage temperature range stg C hermal resistance junction to case hermal resistance case to heatsink Rth(j-c) Rth(j-c)A Rth(j-c)C Rth(c-h) Rth(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 5.7 K/kW 11.4 K/kW 11.4 K/kW 1 K/kW 2 K/kW Analytical function for transient thermal impedance: Z th(j-c) (t) = n i1 R (1- e i Ri(K/kW) i(s) i -t/ i ) Fig. 1 ransient thermal impedance (junction-tocase) vs. time Doc. No. 5SYA Mar. 14 page 3 of 7

4 5SP 26N6500 V25 Max. on-state characteristic model: A B I C ln( I 1) D vj vj vj Valid for I = A vj I V125 Max. on-state characteristic model: A B I C ln( I 1) D vj vj vj Valid for I = A vj I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean on-state current, switching losses ignored Doc. No. 5SYA Mar. 14 page 4 of 7

5 5SP 26N6500 I G (t) I GM» 2..5 A 100 % 90 % I GM I Gon di G /dt t r t p (I GM ) ³ 1.5 I G ³ 2 A/s 1 s» s di G /dt I Gon 10 % t r tp (IGM ) t p (I Gon ) t Fig. 6 Recommended gate current waveform Fig. 7 Max. peak gate power loss Fig. 8 Reverse recovery charge vs. decay rate of on-state current Fig. 9 Peak reverse recovery current vs. decay rate of on-state current Doc. No. 5SYA Mar. 14 page 5 of 7

6 urn-on and urn-off losses 5SP 26N6500 Fig. 10 urn-on energy, half sinusoidal waves Fig. 11 urn-on energy, rectangular waves Fig. 12 urn-off energy, half sinusoidal waves Fig. 13 urn-off energy, rectangular waves -di /dt I (t) I (t), V(t) Q rr -I RRM V(t) t -V 0 otal power loss for repetitive waveforms: P O where P P W 1 I V 0 on ( I f W ) dt off f -dv/dt com -V RRM Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss Doc. No. 5SYA Mar. 14 page 6 of 7

7 5SP 26N6500 Fig. 16 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubber for Phase Control Applications 5SYA 2049 Voltage definitions for phase control thyristors and diodes 5SYA 2051 Voltage ratings of high power semiconductors 5SYA 2034 Gate-Drive Recommendations for PC's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2102 Surge currents for Phase Control hyristors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCs and GO, SORAGE 5SZK 9105 Specification of environmental class for pressure contact diodes, PCs and GO, RANSPORAION 5SZK 9115 Specification of environmental class for presspack Diodes, PCs and GOs, OPERAION (Industry) 5SZK 9116 Specification of environmental class for presspack Diodes, PCs and GOs, OPERAION (raction) Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA Mar. 14 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet