Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020

Transcription

1 V DRM = 5500 V I GQM = 1800 A I SM = A V (0) = 1.9 V r = 0.9 m V DC = 3300 V Reverse Conducting Integrated Gate-Commutated hyristor High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory) Doc. No. 5SYA Feb. 12 Blocking Repetitive peak off-state voltage V DRM Gate Unit energized 5500 V Permanent DC voltage for 100 FI failure rate of RC-GC V DC Ambient cosmic radiation at sea level in open air. Gate Unit energized 3300 V Repetitive peak off-state I DRM V D = V DRM, Gate Unit energized 50 ma Mechanical data (see Fig. 20, 21) Mounting force F m kn Pole-piece diameter D p ± 0.1 mm 85 mm Housing thickness H clamped F m =44kN mm Weight m 2.9 kg Surface creepage distance D s Anode to Gate 33 mm Air strike distance D a Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 41 mm Width IGC w ± 1.0 mm 173 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

2 GC Data On-state (see Fig. 3 to 6, 23) Max. average on-state I (AV)M Half sine wave, C = 85 C, 840 A Double side cooled Max. RMS on-state I (RMS) 1320 A Max. peak non-repetitive surge on-state Limiting load integral Max. peak non-repetitive surge on-state Limiting load integral Max. peak non-repetitive surge on-state Limiting load integral Critical rate of rise of onstate I SM t p = 3 ms, j = 125 C, sine wave A after surge: V D = V R = 0 V I 2 t A 2 s I SM t p = 10 ms, j = 125 C, sine wave A after surge: V D = V R = 0 V I 2 t A 2 s I SM t p = 30 ms, j = 125 C, sine wave A after surge: V D = V R = 0 V I 2 t A 2 s di /dt (cr) For higher di /dt and lower than 100 A an external retrigger puls is required. 100 A/µs On-state voltage V I = 1800 A, j = 125 C V hreshold voltage V (0) j = 125 C 1.9 V Slope resistance I = A 0.9 m r Doc. No. 5SYA Feb. 12 page 2 of 14

3 urn-on switching (see Fig. 23, 25) Critical rate of rise of onstate di /dt (cr) f = Hz, j = 125 C, I = 1800 A V D = 3300 V, I M 2160 A, D CL = 5SDF 08H A/µs urn-on delay time t d(on) V D = 3300 V, j = 125 C 3.5 µs urn-on delay time status t I = 1800 A, di/dt = V D / L i d(on) SF 7 µs feedback L i = 7.6 µh C CL = 10 µf, L CL = 0.3 µh, Rise time t r D CL = 5SDF 08H µs urn-on energy per pulse 1 J E on urn-off switching (see Fig. 2, 7, 8, 19, 23, 25) Max. controllable turn-off I GQM V DM V DRM, j = 125 C, V D = 3300 V, R S = 0.65, C CL = 10 µf, L CL 0.3 µh, D CL = 5SDF 08H A Max. controllable turn-off I GQM V DM V DRM, j = 125 C, V D = 3900 V, R S = 0.65, C CL = 10 µf, L CL 0.3 µh, D CL = 5SDF 08H A urn-off delay time t d(off) V D = 3300 V, j = 125 C 7 µs V urn-off delay time status t DM V DRM, R S = 0.65 d(off) SF 7 µs I feedback GQ = 1800 A, L i = 7.6 µh C CL = 10 µf, L CL = 0.3 µh, urn-off energy per pulse E off D CL = 5SDF 08H J Doc. No. 5SYA Feb. 12 page 3 of 14

4 Diode Data On-state (see Fig. 9 to 12, 24, 25) Max. average on-state I F(AV)M Half sine wave, C = 85 C 340 A Max. RMS on-state I F(RMS) 530 A Max. peak non-repetitive surge Limiting load integral Max. peak non-repetitive surge Limiting load integral I FSM t p = 10 ms, vj = 125 C, V R = 0 V A I 2 t A 2 s I FSM t p = 3 ms, vj = 125 C, V R = 0 V A I 2 t A 2 s On-state voltage V F I F = 1800 A, vj = 125 C V hreshold voltage V (F0) vj = 125 C 2.7 V Slope resistance I F = A 2.23 m r F urn-on Peak forward recovery V FRM di F /dt = 510 A/µs, vj = 125 C 200 V voltage di F /dt = 3000 A/µs, vj = 125 C 450 V urn-off (see Fig. 13 to 17, 24, 25) Max. decay rate of on-state di/dt (cr) I FM = 900 A, vj = 125 C V DClink = 3900 V 510 A/s Max. decay rate of on-state di/dt (cr) I FM = 1800 A, vj = 125 C V DClink = 3300 V 510 A/s Reverse recovery I RM I FM = 1800 A, V D = 3300 V 780 A -di Reverse recovery charge Q F /dt = 510 A/µs, L CL = 300 nh rr 2800 µc C CL = 10 µf, R S = 0.65, urn-off energy E rec vj = 125 C, D CL = 5SDF 08H J Doc. No. 5SYA Feb. 12 page 4 of 14

5 Gate Unit Data Power supply (see Fig. 2, 18, 19, 21, 22) Gate Unit voltage V Gin RMS AC square wave amplitude (15 khz V (Connector X1) - 100kHz) or DC voltage. No galvanic isolation to power circuit. Min. needed to power up the Gate Unit Gate Unit power consumption I Gin Min Rectified average see application note 5SYA A P Gin Max 130 W Internal limitation I Gin Max Rectified average limited by 8 the Gate Unit A Optical control input/output 2) (see Fig. 23) Min. on-time t on 40 µs Min. off-time t off 40 µs Optical input power P on CS CS: Command signal dbm Optical noise power P off CS SF: Status feedback -45 dbm Optical output power P Valid for 1mm plastic optical fiber on SF dbm Optical noise power (POF) -50 dbm P off SF Pulse width threshold t GLICH Max. pulse width without response 400 ns External retrigger pulse width t retrig ns 2) Do not disconnect or connect fiber optic cables while light is on. Connectors 2) (see Fig. 20 to 22) Parameter Symbol Description Gate Unit power connector X1 AMP: MA-156, Part Number ) LWL receiver for command signal CS Avago, ype HFBR-2521Z 4) LWL transmitter for status feedback SF Avago, ype HFBR-1528Z 4) 2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, 4) Avago echnologies, Visual feedback (see Fig. 21) Parameter Symbol Description Color Gate OFF LED1 "Light" when GC is off (green) Gate ON LED2 "Light" when gate- is flowing (yellow) Fault LED3 "Light" when not ready / Failure (red) Power supply voltage OK LED4 "Light" when power supply is within specified range (green) Doc. No. 5SYA Feb. 12 page 5 of 14

6 hermal Junction operating temperature vj C Storage temperature range stg 0 60 C Ambient operational temperature a 0 50 C hermal resistance junction-to-case of GC R th(j-c) Double side cooled 12.6 K/kW hermal resistance case-toheatsink of GC hermal resistance junction-to-case of Diode hermal resistance case-toheatsink of Diode R th(c-h) No heat flow between GC and Diode part 4.2 K/kW R th(j-c) Double side cooled 26 K/kW R th(c-h) No heat flow between GC and Diode part 10.4 K/kW Analytical function for transient thermal impedance: Z thjc (t) = R i(1 - e GC i 1 i n -t/ R i (K/kW) i (s) Diode i R i (K/kW) i (s) i ) Fig. 1 ransient thermal impedance (junction-tocase) vs. time (max. values) Note 1 Max. urn-off for Lifetime operation calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off vs. frequency for lifetime operation Doc. No. 5SYA Feb. 12 page 6 of 14

7 GC Part Max. on-state characteristic model: V 25 A B I C ln( I 1) D Valid for i = A I Max. on-state characteristic model: V 125 A B I C ln( I 1) D Valid for i = A I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 3 GC on-state voltage characteristics Fig. 4 GC on-state voltage characteristics Fig. 5 GC surge on-state vs. pulse length, half-sine wave, no reapplied voltage Fig. 6 GC surge on-state vs. number of pulses, half-sine wave, 10 ms, 50Hz, no reapplied voltage Doc. No. 5SYA Feb. 12 page 7 of 14

8 Fig. 7 GC turn-off energy per pulse vs. turn-off Fig. 8 GC Safe Operating Area Doc. No. 5SYA Feb. 12 page 8 of 14

9 Diode Part Max. on-state characteristic model: V F25 A B I C ln( I 1) D Valid for I F = A I Max. on-state characteristic model: V F125 A B I C ln( I 1) D Valid for I = A I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 9 Max. on-state voltage characteristics Fig. 10 Max. on-state voltage characteristics Fig. 11 Diode surge on-state vs. pulse length, half-sine wave, no reapplied voltage Fig. 12 Diode surge on-state vs. number of pulses, half-sine wave, 10 ms, 50Hz, no reapplied voltage Doc. No. 5SYA Feb. 12 page 9 of 14

10 Fig. 13 Upper scatter range of urn-off energy per pulse vs. turn-off Fig. 14 Upper scatter range of turn-off energy per pulse vs reverse rise rate Fig. 15 Upper scatter range of reverse recovery charge vs reverse rise rate Fig. 16 Upper scatter range of reverse recovery vs reverse rise rate Doc. No. 5SYA Feb. 12 page 10 of 14

11 Fig. 17 Diode Safe Operating Area Fig. 18 Max. Gate Unit input power in chopper mode Fig. 19 Burst capability of Gate Unit Doc. No. 5SYA Feb. 12 page 11 of 14

12 Max n120.5 n85 H 41 n85 M4 (2x) M4 (2x) Detail A M4 (2x) ±0.5 X1 68.8± ± ±0.3 50± ±0.3 50± ±0.2 n3.6±0.1x -0 (2x) SF CS Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Fig. 21 Detail A: pin out of supply connector X1. X1 1) V Gin (AC or DC+) 2) V Gin (AC or DC+) 3) Cathode 4) V Gin (AC or DC-) 5) V Gin (AC or DC-) RC-IGC Gate Unit RC-GC X1 Supply (V GIN ) Internal Supply (No galvanic isolation to power circuit) Anode CS SF LED1 LED2 LED3 LED4 Command Signal (Light) Status Feedback (Light) x Rx Logic Monitoring urn- On Circuit urn- Off Circuit Gate Cathode Fig. 22 Block diagram Doc. No. 5SYA Feb. 12 page 12 of 14

13 urn-on di /dt I M External Retrigger pulse urn-off V DSP V DM V D V D I 0.9 V D I 0.4 I GQ 0.1 V D V D CS CS CS SF SF SF t d(on) SF t retrig t d(off) SF t d(on) t d(off) t r t on t off Fig. 23 General and voltage waveforms with IGC-specific symbols V F (t), I F (t) V FR di F /dt I F (t) -di F /dt I F (t) V F (t) V F (t) Q rr t fr tfr (typ) 10 µs I RM V R (t) t Fig. 24 General and voltage waveforms with Diode-specific symbols Doc. No. 5SYA Feb. 12 page 13 of 14

14 L i L CL R s D CL DU GC - part V DC C CL DU Diode - part L Load Fig. 25 est circuit Related documents: 5SYA 2031 Applying IGC Gate Units 5SYA 2032 Applying IGCs 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2046 Failure rates of IGCs due to cosmic rays 5SYA 2048 Field measurements on High Power Press Pack Semiconductors 5SYA 2051 Voltage ratings of high power semiconductors 5SZK SZK SZK 9110 Specification of enviromental class for pressure contact IGCs, OPERAION available on request, please contact factory Specification of enviromental class for pressure contact IGCs, SORAGE available on request, please contact factory Specification of enviromental class for pressure contact IGCs, RANSPORAION available on request, please contact factory Please refer to for version of documents. ABB Switzerland Ltd Doc. No. 5SYA Feb. 12 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet