Ambient cosmic radiation at sea level in open air. Gate Unit energized

Transcription

1 V DRM = 4500 V Asymmetric Integrated Gate- I GQM = 4000 A I SM = A V (0) = 1.4 V r = mw V DC = 2800 V Commutated hyristor 5SHY 35L4520 High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory) Doc. No. 5SYA July 14 Blocking Rep. peak off-state voltage VDRM Gate Unit energized 4500 V Permanent DC voltage for 100 FI failure rate of GC VDC Ambient cosmic radiation at sea level in open air. Gate Unit energized 2800 V Reverse voltage VRRM 17 V Rep. peak off-state current IDRM VD = VDRM, Gate Unit energized 50 ma Mechanical data (see Fig. 11, 12) Mounting force Fm kn Pole-piece diameter Dp ± 0.1 mm 85 mm Housing thickness H clamped Fm =40kN mm Weight m 2.9 kg Surface creepage distance Ds Anode to Gate 33 mm Air strike distance Da Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 41 mm Width IGC w ± 1.0 mm 173 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

2 GC Data On-state (see Fig. 3, 4, 5, 6, 14, 15) Max. average on-state current I(AV)M Half sine wave, C = 85 C, Double side cooled 1700 A Max. RMS on-state current I(RMS) 2670 A Max. peak non-repetitive surge on-state current ISM tp = 3 ms, j = 125 C, sine wave after surge: VD = VR = 0 V A Limiting load integral I 2 t A 2 s Max. peak non-repetitive surge on-state current ISM tp = 10 ms, j = 125 C, sine wave after surge: VD = VR = 0 V A Limiting load integral I 2 t A 2 s Max. peak non-repetitive surge on-state current ISM tp = 30 ms, j = 125 C, sine wave after surge: VD = VR = 0 V A Limiting load integral I 2 t A 2 s Stray inductance between GC and antiparallel diode Critical rate of rise of onstate current LD Only relevant for applications with antiparallel diode to the IGC di/dt(cr) For higher di/dt and current lower than 100 A an external retrigger puls is required. 300 nh 200 A/µs On-state voltage V I = 4000 A, j = 125 C V hreshold voltage V(0) j = 125 C 1.4 V Slope resistance r I = A mw Doc. No. 5SYA July 14 page 2 of 10

3 urn-on switching (see Fig. 14, 15) Critical rate of rise of onstate current di/dt(cr) f = Hz, j = 125 C, I = 4000 A VD = 2800 V, IM 4800 A 1000 A/µs urn-on delay time td(on) VD = 2800 V, j = 125 C, 3.5 µs I = 4000 A, di/dt = VD / Li urn-on delay time status td(on) SF 7 µs Li feedback = 5 µh CCL = 10 µf, LCL = 0.3 µh Rise time tr DFWD = DCL = 5SDF 10H µs urn-on energy per pulse Eon 1.5 J urn-off switching (see Fig. 7, 8, 10, 14, 15) Max. controllable turn-off current IGQM VDM VDRM, j = 125 C, VD = 2800 V, RS = 0.65 W, CCL = 10 µf, LCL 0.3 µh DFWD = DCL = 5SDF 10H A urn-off delay time td(off) VD = 2800 V, j = 125 C, 7 µs urn-off delay time status VDM VDRM, RS = 0.65 W td(off) SF 7 µs feedback IGQ = 4000 A, Li = 5 µh CCL = 10 µf, LCL = 0.3 µh urn-off energy per pulse Eoff DFWD = DCL = 5SDF 10H J Doc. No. 5SYA July 14 page 3 of 10

4 Gate Unit Data Power supply (see Fig. 2, 9, 10, 12, 13) Gate Unit voltage (Connector X1) Min. current needed to power up the Gate Unit VGin RMS AC square wave amplitude (15 khz - 100kHz) or DC voltage. No galvanic isolation to power circuit. IGin Min Rectified average current see application note 5SYA V 2 A Gate Unit power PGin Max 130 W consumption Internal current limitation IGin Max Rectified average current limited by the Gate Unit 8 A Optical control input/output 2) Min. on-time ton 40 µs Min. off-time toff 40 µs Optical input power Pon CS CS: Command signal dbm Optical noise power Poff CS SF: Status feedback -45 dbm Optical output power Pon SF Valid for 1mm plastic optical fiber dbm Optical noise power Poff SF (POF) -50 dbm Pulse width threshold tglich Max. pulse width without response 400 ns External retrigger pulse width tretrig ns 2) Do not disconnect or connect fiber optic cables while light is on. Connectors 2) (see Fig. 11, 12, 13) Parameter Symbol Description Gate Unit power connector X1 AMP: MA-156, Part Number ) LWL receiver for command signal CS Avago, ype HFBR-2521Z 4) LWL transmitter for status feedback SF Avago, ype HFBR-1528Z 4) 2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, 4) Avago echnologies, Visual feedback (see Fig. 13) Parameter Symbol Description Color Gate OFF LED1 "Light" when GC is off (green) Gate ON LED2 "Light" when gate-current is flowing (yellow) Fault LED3 "Light" when not ready / Failure (red) Power supply voltage OK LED4 "Light" when power supply is within specified range (green) Doc. No. 5SYA July 14 page 4 of 10

5 hermal Junction operating temperature C Storage temperature range stg C Ambient operational temperature a C hermal resistance junction-to-case Rth(j-c) of GC Double side cooled 8.5 K/kW hermal resistance case-toheatsink of GC Rth(c-h) Analytical function for transient thermal impedance: Double side cooled 3 K/kW Z th(j-c) (t) = n å i= 1 R(1- i e -t/ t i Ri(K/kW) ti(s) Max. urn-off current for Lifetime operation i ) Fig. 1 ransient thermal impedance (junction-to-case) vs. time (max. values) calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off current vs. frequency for lifetime operation Doc. No. 5SYA July 14 page 5 of 10

6 Max. on-state characteristic model: V 25 = A + B I + C ln( I + 1) + D Valid for i = A I Max. on-state characteristic model: V 125 = A + B I + C ln( I + 1) + D Valid for i = A I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 3 GC on-state voltage characteristics Fig. 4 GC on-state voltage characteristics Fig. 5 Surge on-state current vs. pulse length, halfsine wave, no reapplied voltage Fig. 6 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz, no reapplied voltage Doc. No. 5SYA July 14 page 6 of 10

7 Fig. 7 GC turn-off energy per pulse vs. turn-off current Fig. 8 Safe Operating Area Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit Doc. No. 5SYA July 14 page 7 of 10

8 Max M4 (2x) ± ± ±0.3 H M4 (2x) M4 (2x) Detail A X ±0.3 50± ±0.3 50± ± ±0.1x (2x) 439 SF CS Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Fig X1 Detail A: pin out of supply connector X1 1) VGin (AC or DC+) 2) VGin (AC or DC+) 3) Cathode 4) VGin (AC or DC-) 5) VGin (AC or DC-) AS-IGC Gate Unit AS-GC X1 Supply (V GIN ) Internal Supply (No galvanic isolation to power circuit) Anode CS SF LED1 LED2 LED3 LED4 Command Signal (Light) Status Feedback (Light) x Rx Logic Monitoring urn- On Circuit urn- Off Circuit Gate Cathode Fig. 13 Block diagram Doc. No. 5SYA July 14 page 8 of 10

9 urn-on di /dt I M External Retrigger pulse urn-off V DSP V DM V D V D I 0.9 V D I 0.4 I GQ 0.1 V D V D CS CS CS SF SF SF t d(on) SF t retrig t d(off) SF t d(on) t d(off) t r t on t off Fig. 14 General current and voltage waveforms with IGC - specific symbols L i L CL L D R s D CL DU V DC C CL D FWD Fig. 15 est circuit Doc. No. 5SYA July 14 page 9 of 10

10 Related documents: 5SYA 2031 Applying IGC Gate Units 5SYA 2032 Applying IGCs 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2046 Failure rates of IGCs due to cosmic rays 5SYA 2048 Field measurements on High Power Press Pack Semiconductors 5SYA 2051 Voltage ratings of high power semiconductors 5SZK SZK SZK SHY 35L4520 Specification of enviromental class for pressure contact IGCs, OPERAION available on request, please contact factory Specification of enviromental class for pressure contact IGCs, SORAGE available on request, please contact factory Specification of enviromental class for pressure contact IGCs, RANSPORAION available on request, please contact factory Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA July 14 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet