High Power Sonic FRD Type E3000EC45E

Size: px
Start display at page:

Download "High Power Sonic FRD Type E3000EC45E"

Transcription

1 Date:- 11 April 2017 Data Sheet Issue: A1 Absolute Maximum Ratings OLTAGE RATINGS High Power Sonic RD Type MAXIMUM LIMITS RRM Repetitive peak reverse voltage, (note 1) 4500 RSM Non-repetitive peak reverse voltage, (note 1) 4600 R(d.c.) Maximum reverse d.c. voltage (note 1) 2800 UNITS OTHER RATINGS (note 6) MAXIMUM LIMITS I (A)M Mean forward current, T sink=55 C, (note 2) 3410 A I (A)M Mean forward current. T sink=100 C, (note 2) 2070 A I (A)M Mean forward current. T sink=100 C, (note 3) 1418 A I (A)M Mean forward current. T sink=100 C, (note 4) 1060 A I (RMS) Nominal RMS forward current, T sink=25 C, (note 2) 6475 A I (d.c.) D.C. forward current, T sink=25 C, (note 5) 5680 A I SM Peak non-repetitive surge t p=10ms, RM=60% RRM, (note 6) 45.7 ka I SM2 Peak non-repetitive surge t p=10ms, RM10, (note 6) 50.3 ka I 2 t I 2 t capacity for fusing t p=10ms, RM=60% RRM, (note 6) A 2 s I 2 t I 2 t capacity for fusing t p=10ms, RM10, (note 6) A 2 s UNITS P rr Maximum non-repetitive peak reverse recovery power, (note 8) 14.2 MW T j op Operating temperature range -40 to +140 C T stg Storage temperature range -40 to +150 C Notes:- 1) De-rating factor of 0.13% per C is applicable for T j below 25 C. 2) Double side cooled, single phase; 50Hz, 180 half-sinewave. 3) Anode side cooled, single phase; 50Hz, 180 half-sinewave. 4) Cathode side cooled, single phase; 50Hz, 180 half-sinewave. 5) Double side cooled. 6) Half-sinewave, 140 C T j initial. 7) Current (I ) ratings have been calculated using T0 and r T (see page 2) 8) T j=t jop, I =, di/dt=5000a/µs r=2800 and L s=120nh. Test circuit and sample waveform are shown in diagram 1. IGBT type T2960BB45E used as switch. Provisional Data Sheet. Type Page 1 of 11 April, 2017

2 High Power Sonic RD Type Characteristics M PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS I M= Maximum peak forward voltage I M= T0 Threshold voltage Current range 3410A A (Note 2) r T Slope resistance m T01 Threshold voltage Current range A r T1 Slope resistance m RM di/dt = 5000A/µs Maximum forward recovery voltage di/dt = 5000A/µs, T j=25 C I RRM Peak reverse current Rated RRM ma Rated RRM, T j=25 C Q rr Recovered charge µc Q ra Recovered charge, 50% Chord µc I rm Reverse recovery current I M=, t p=1ms, di/dt=5000a/µs, r=2800, 50% Chord (note 3) A t rr Reverse recovery time, 50% Chord µs E rr Reverse recovery energy loss J Double side cooled K/W R thjk Thermal resistance, junction to heatsink Anode side cooled K/W Cathode side cooled Mounting force (Note 4) kn W t Weight kg Notes:- 1) Unless otherwise indicated T j=140 C. 2) T0 and r T were used to calculate the current ratings illustrated on page one. 3) igures 3-7 were compiled using these conditions. Test circuit and sample waveform are shown in diagram 1. 4) or clamp forces outside these limits, please consult factory. Provisional Data Sheet. Type Page 2 of 11 April, 2017

3 High Power Sonic RD Type Additional information on Ratings and Characteristics 1.0 De-rating actor A blocking voltage de-rating factor of 0.13% per C is applicable to this device for T j below 25 C. 2.0 ABCD Constants These constants (applicable only over current range of characteristic in igure 1) are the coefficients of the expression for the forward characteristic given below: A B ln( I ) C I D I where I = instantaneous forward current. 3.0 Reverse recovery ratings Diagram 1 Reverse Recovery test circuit and sample waveform L S I G D.U.T (i) Q ra is based on 50% I rm chord as shown in igure below. (ii) Q rr is based on a 150s integration time. I.e. (iii) 4.0 Reverse Recovery Loss Q rr 150s 0 i rr t K actor t. dt 1 2 The following procedure is recommended for use where it is necessary to include reverse recovery loss. Provisional Data Sheet. Type Page 3 of 11 April, 2017

4 High Power Sonic RD Type rom waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from: T SINK T E k f R J ( MAX ) th( J Hs) Where k = ( C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = Rated frequency in Hz at the original sink temperature. R th(j-hs) = d.c. thermal resistance ( C/W) The total dissipation is now given by: W ( tot ) W( original ) E f NOTE 1 - Reverse Recovery Loss by Measurement This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) AC coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal. (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R 2 r 4 C di s dt Where: r = Commutating source voltage C S = Snubber capacitance R = Snubber resistance 5.0 Computer Modelling Parameters 5.1 Device Dissipation Calculations I A 2 T 0 T ff ff r T 2 r W T A Where T0 =2.124, r T =0.339m ff = form factor (normally unity for fast diode applications) Provisional Data Sheet. Type Page 4 of 11 April, 2017

5 High Power Sonic RD Type W A T R T T th j( MAX ) T K 5.2 Calculation of using ABCD Coefficients The forward characteristic I s, on page 6 is represented in two ways; (i) the well established T0 and r T tangent used for rating purposes and (ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for in terms of I given below: A B ln( I ) C I D I The constants, derived by curve fitting software, are given in this report for both hot and cold characteristics. The resulting values for agree with the true device characteristic over a current range, which is limited to that plotted. 25 C Coefficients 140 C Coefficients A B C D Provisional Data Sheet. Type Page 5 of 11 April, 2017

6 High Power Sonic RD Type Curves igure 1 orward characteristics of limit device igure 2 Maximum forward recovery voltage 0 25 C 140 C Instantaneous forward current M - I (A) 100 Maximum forward recovery voltage RM - () C 25 C Maximum instantaneous forward voltage - M () Rate of rise of forward current - di/dt (A/µs) igure 4 Maximum recovery charge, Q ra (50% igure 3 Maximum recovered charge, Q rr chord) 0 0 Total recovered charge - Q rr (µc) 2 Recovered charge - Q ra, 50% chord (µc) Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) Provisional Data Sheet. Type Page 6 of 11 April, 2017

7 High Power Sonic RD Type igure 5 - Maximum reverse current, I rm 0 T j =140 C igure 6 Maximum recovery time, t rr (50% chord) 10 Reverse recovery current rm - I (A) 2 Recovery time - rr, t 50% chord (µs) Commutation rate - di/dt (A/µs) Commutation rate - di/dt (A/µs) igure 7 Typical reverse recovery energy per pulse 0 E2400EC45E r = 2800 Measured without snubber 1.00E+03 E0170YH45C issue 1 T j = 150 C 1.00E+02 Reverse recovery energy per pulse - r (mj) E 2 Energy per pulse (J) Energy per pulse (J) 1.00E E E E A 200A 1.0E A Commutation rate - di/dt (A/µs) 1.00E E E E E E-02 Provisional Data Sheet. Type Page 7 of 11 April, 2017

8 High Power Sonic RD Type igure 9 - Sine wave frequency vs. pulse width igure 10 Sine wave frequency vs. pulse width T K = 55 C T K = 85 C 100% Duty Cycle 100% Duty Cycle requency (Hz) requency (Hz) igure 11 - Square wave energy per pulse igure 12 Square wave energy per pulse di/dt =100A/µs di/dt =/µs 5000A Energy per pulse (J) 1.0E+00 Energy per pulse (J) 1.0E E E E E-02 Provisional Data Sheet. Type Page 8 of 11 April, 2017

9 High Power Sonic RD Type igure 13 - Square wave frequency vs pulse width igure 14 Square wave frequency vs pulse width di/dt =100A/µs T K =55 C di/dt =100A/µs T K = 85 C 100% Duty Cycle 100% Duty Cycle requency (Hz) requency (Hz) igure 15 - Square wave frequency vs pulse width igure 16 Square wave frequency vs pulse width di/dt =/µs T K = 55 C di/dt =/µs T K = 85 C 100% Duty Cycle 100% Duty Cycle requency (Hz) requency (Hz) Provisional Data Sheet. Type Page 9 of 11 April, 2017

10 High Power Sonic RD Type igure 17 Safe operating area di/dt = 5000A/µs L S < 120nH igure 18 Transient thermal impedance ASC K/W KSC K/W Reverse recovery current - I r (A) Thermal impedance (K/W) DSC 0.005K/W Reverse recovery voltage - r () Time (s) igure 19 Maximum surge and I 2 t ratings E+08 Total peak half sine surge current - I SM (A) 00 T j (initial) = 140 C I 2 t: RRM 10 I SM : R =60% RRM I 2 t: R =60% RRM I SM : RRM E E+06 Maximum I 2 t (A 2 s) Duration of surge (ms) Duration of surge 50Hz) Provisional Data Sheet. Type Page 10 of 11 April, 2017

11 High Power Sonic RD Type Outline Drawing & Ordering Information 100A378 ORDERING INORMATION (Please quote 10 digit code as below) E3000 EC 45 E ixed voltage code ixed ixed Type Code outline code RRM/100 ixed code, product series 45 Order code: 4500 RRM, 26mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D Lampertheim Tel: ax: marcom@ixys.de IXYS Corporation 1590 Buckeye Drive Milpitas CA Tel: +1 (408) ax: +1 (408) sales@ixys.net IXYS UK Westcode Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0) ax: +44 (0) sales@ixysuk.com IXYS Long Beach IXYS Long Beach, Inc 2500 Mira Mar Ave, Long Beach CA Tel: +1 (562) ax: +1 (562) service@ixyslongbeach.com The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS UK Westcode Ltd. IXYS UK Westcode Ltd. In the interest of product improvement, IXYS UK Westcode Ltd reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Provisional Data Sheet. Type Page 11 of 11 April, 2017

WESTCODE. An IXYS Company. Date:- 3 Jan, Data Sheet Issue:- A1. Provisional Data High Power Sonic FRD Type E0460QC45C. Absolute Maximum Ratings

WESTCODE. An IXYS Company. Date:- 3 Jan, Data Sheet Issue:- A1. Provisional Data High Power Sonic FRD Type E0460QC45C. Absolute Maximum Ratings WESTCODE An IXYS Company Date:- 3 Jan, 2012 Data Sheet Issue:- A1 Absolute Maximum Ratings Provisional Data High Power Sonic FRD Type VOLTAGE RATINGS MAXIMUM LIMITS V RRM Repetitive peak reverse voltage,

More information

Soft Recovery Diode Type M0433WC120 to M0433WC200

Soft Recovery Diode Type M0433WC120 to M0433WC200 Date:- 6 Nov, 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0433WC120 to M0433WC200 Absolute Maximum Ratings OLTAGE RATINGS MAXIMUM LIMITS RRM Repetitive peak reverse voltage, (note 1) 1200-2000

More information

WESTCODE. Soft Recovery Diode Type M0859LC140 to M0859LC160 (Old Type No.: SM02-16CXC220)

WESTCODE. Soft Recovery Diode Type M0859LC140 to M0859LC160 (Old Type No.: SM02-16CXC220) WESTCODE An IXYS Company Date:- 23 Jun, 2004 Data Sheet Issue:- 1 Soft Recovery Diode Type M0859LC140 to M0859LC160 (Old Type No.: SM02-16CXC220) Absolute Maximum Ratings OLTAGE RATINGS MAXIMUM LIMITS

More information

Soft Recovery Diode Type M0451YC160 to M0451YC200

Soft Recovery Diode Type M0451YC160 to M0451YC200 Date:- 04 Nov 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0451YC160 to M0451YC200 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 1600-2000

More information

WESTCODE. An IXYS Company. Date:- 24 May, Data Sheet Issue:- 2. Provisional Data Extra Fast Recovery Diode Type F1600NC120

WESTCODE. An IXYS Company. Date:- 24 May, Data Sheet Issue:- 2. Provisional Data Extra Fast Recovery Diode Type F1600NC120 WESTCODE An IXYS Company Absolute Maximum Ratings Provisional Data Extra ast Recovery Diode Type OLTAGE RATINGS Development Type No. x021nc120 Date:- 24 May, 2002 Data Sheet Issue:- 2 MAXIMUM LIMITS RRM

More information

Soft Recovery Diode Type M0139S/R#120 to M0139S/R#180

Soft Recovery Diode Type M0139S/R#120 to M0139S/R#180 Date:- 26 Sep, 2016 Data Sheet Issue:- 2 Soft Recovery Diode Type M0139S/R#120 to M0139S/R#180 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 1200-1800

More information

Soft Recovery Diode Type M0336S/RA120 to M0336S/RA140

Soft Recovery Diode Type M0336S/RA120 to M0336S/RA140 Date:- 21 Oct 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0336S/RA120 to M0336S/RA140 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 1600-1400

More information

Distributed Gate Thyristor Type R1280NC21x to R1280NC25x

Distributed Gate Thyristor Type R1280NC21x to R1280NC25x Date:- 01 August 2012 Data Sheet Issue:- 5 Distributed Gate Thyristor Type R1280NC21x to R1280NC25x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage,

More information

Distributed Gate Thyristor Types R0633YC10x to R0633YC12x

Distributed Gate Thyristor Types R0633YC10x to R0633YC12x Date:- 14 Jul, 2015 Data Sheet Issue:- 4 Distributed Gate Thyristor Types R0633YC10x to Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200

More information

Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21)

Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Date:- 4 Mar, 2003 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive

More information

Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21)

Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive

More information

WESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14)

WESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) An IXYS Company Date:- 14 Oct, 2004 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS

More information

Insulated Gate Bi-Polar Transistor Type T1600GB45G

Insulated Gate Bi-Polar Transistor Type T1600GB45G Date:- 1 Nov, 214 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 45 V V DC link Permanent DC voltage

More information

Medium Voltage Thyristor Types K2359TD600 to K2359TD650 Old Type No.: P1063DH60-65

Medium Voltage Thyristor Types K2359TD600 to K2359TD650 Old Type No.: P1063DH60-65 WESTCODE An IXYS Company Date:- 2 Aug, 22 Data Sheet Issue:- 1 Medium Voltage Thyristor Types K2359TD6 to K2359TD65 Old Type No.: P163DH6-65 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V DRM

More information

Insulated Gate Bi-Polar Transistor Type T2400GB45E

Insulated Gate Bi-Polar Transistor Type T2400GB45E Date:- 27 Nov, 214 Data Sheet Issue:- 2 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 4 V V DC link Permanent DC voltage

More information

MD#630-30N2 & MD#630-36N2

MD#630-30N2 & MD#630-36N2 Date: 12 th October 2015 Data Sheet Issue: 1 Dual Diode Modules MD#630-30N2 & MD#630-36N2 Absolute Maximum Ratings VRRM [V] MDD MDA MDK 1200 630-30N2 630-30N2 630-30N2 1800 630-36N2 630-36N2 630-36N2 VOLTAGE

More information

Rectifier Diode Types W0735R/SA120 to W0735R/SA150 Previous Type No.: SW02-15PHN/R470

Rectifier Diode Types W0735R/SA120 to W0735R/SA150 Previous Type No.: SW02-15PHN/R470 Date:- 20 th August, 2014 Data Sheet Issue:- 2 Rectifier Diode Types W0735R/SA120 to W0735R/SA150 Previous Type No.: SW02-15PHN/R470 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive

More information

Phase Control Thyristor Types N0180SH120 to N0180SH160

Phase Control Thyristor Types N0180SH120 to N0180SH160 Date:- 03 August 2012 Data Sheet Issue:- K1 Phase Control Thyristor Types N0180SH120 to N0180SH160 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage,

More information

Distributed Gate Thyristor Types R3115TJ24# and R3115TJ28#

Distributed Gate Thyristor Types R3115TJ24# and R3115TJ28# Date:- 4 th August, 2017 Data Sheet Issue:- A2 Distributed Gate Thyristor Types R3115TJ24# and R3115TJ28# Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage,

More information

Distributed Gate Thyristor Types R0472YC12x to R0472YC16x

Distributed Gate Thyristor Types R0472YC12x to R0472YC16x Date:- 23 Oct 2014 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R0472YC12x to R0472YC16x Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VDRM Repetitive peak off-state voltage, (note

More information

Symmetrical Gate Turn-Off Thyristor Type S0500YC20Y and S0500YC25Y

Symmetrical Gate Turn-Off Thyristor Type S0500YC20Y and S0500YC25Y Date:- 1 May, 213 Data Sheet Issue:- 1 Symmetrical Gate Turn-Off Thyristor Type S5YC2Y and S5YC25Y Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS RM Repetitive peak off-state voltage, (note

More information

Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250

Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250 Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1). 2500

More information

WESTCODE. Anode Shorted Gate Turn-Off Thyristor Type G1000NC450. An IXYS Company. Date:- 28 Oct-04. Data Sheet Issue:- 1. Absolute Maximum Ratings

WESTCODE. Anode Shorted Gate Turn-Off Thyristor Type G1000NC450. An IXYS Company. Date:- 28 Oct-04. Data Sheet Issue:- 1. Absolute Maximum Ratings WESTCODE An IXYS Company Date:- 28 Oct-4 Data Sheet Issue:- 1 Anode Shorted Gate Turn-Off Thyristor Type Absolute Maximum Ratings MAXIMUM VOLTAGE RATINGS LIMITS UNITS V DRM Repetitive peak off-state voltage,

More information

TFI V DRM V DSM V RRM V RSM

TFI V DRM V DSM V RRM V RSM FAST SWITCHING THYRISTOR V DRM /V RRM = 2200 2400 V I T(AV) = 2500 A (T C = 80 C) I T(AV) = 3400 A (T C = 55 C) I TSM = 40 ka (T Vj = 125 C) Interdigitated amplifying gate Low on-state switching losses

More information

5SDF 63X0400. High Frequency Welding Diode. VRRM = 400 V Low forward and reverse recovery losses. IFAVm = A High operational reliability

5SDF 63X0400. High Frequency Welding Diode. VRRM = 400 V Low forward and reverse recovery losses. IFAVm = A High operational reliability P R E L I M I N A R Y SDF 63X4 High Frequency Welding Diode Properties SDF 63X4 Key Parameters High forward current capability VRRM = 4 V Low forward and reverse recovery losses IFAVm = 6 266 A High operational

More information

TK18. Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 TK18

TK18. Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 TK18 Phase Control Thyristor Advance Information Replaces January 2000 version, DS45253-4.0 DS4253-5.0 July 2001 FEATURES High Surge Capability APPLICATIONS High Power Drives High Voltage Power Supplies DC

More information

Fast Recovery Diodes (Hockey PUK Version), 920 A, 1050 A

Fast Recovery Diodes (Hockey PUK Version), 920 A, 1050 A VS-SD153C..L Series Fast Recovery Diodes (Hockey PUK Version), 92 A, 15 A B-PUK (DO-2AB) PRIMARY CHARACTERISTICS I F(AV) 92 A, 15 A Package B-PUK (DO-2AB) Circuit configuration Single FEATURES High power

More information

SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8.

SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8. SD33N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series.5 µs recovery time High voltage ratings up to 5V High current capability Optimized turn on and turn off characteristics

More information

ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)

ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK) Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK)

More information

V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875

V CES = 1200V I C = Tc = 80 C. T c = 25 C 1050 T c = 80 C 875 APTGL875U12DAG Single switch with Series diode Trench + Field Stop IGBT4 CES = 12 I C = 875A @ Tc = 8 C EK E G C CK Application Zero Current Switching resonant mode Features Trench + Field Stop IGBT 4

More information

Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 07D1800 Unit Max repetitive peak forward and reverse blocking voltage

Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 07D1800 Unit Max repetitive peak forward and reverse blocking voltage V DRM = 1800 V I (AV)M = 730 A I (RMS) = 1150 A I SM = 9 10 3 A V 0 = 0.8 V r = 0.54 mw Phase Control hyristor 5SP 07D1800 Doc. No. 5SYA1027-06 May 07 Patented free-floating silicon technology Low on-state

More information

Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 17H5200 Unit Max. surge peak forward and reverse blocking voltage

Blocking Maximum rated values 1) Parameter Symbol Conditions 5STP 17H5200 Unit Max. surge peak forward and reverse blocking voltage V DRM = 5200 V Phase Control hyristor I (AV)M = 1975 A I (RMS) = 3100 A I SM = 34 10 3 A V 0 = 1.02 V r = 0.32 mw 5SP 17H5200 Doc. No. 5SYA1049-06 Nov. 13 Patented free-floating silicon technology Low

More information

DCR780G42. Phase Control Thyristor Preliminary Information KEY PARAMETERS FEATURES 4200V 780A 10500A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION

DCR780G42. Phase Control Thyristor Preliminary Information KEY PARAMETERS FEATURES 4200V 780A 10500A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION Phase Control Thyristor Preliminary Information DS5829-1.2 August 27 (LN25545) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability V DRM I T(AV) I TSM dv/dt* di/dt 42V 78A 15A 15V/µs 4A/us

More information

SD400C..C SERIES 800A. Hockey Puk Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics

SD400C..C SERIES 800A. Hockey Puk Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics SDC..C SERIES STANDARD RECOVERY DIODES Hockey Puk Version Features Wide current range High voltage ratings up to V High surge current capabilities Diffused junction Hockey Puk version Case style DO-AA

More information

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) V DM = 5200 V I (AV)M = 1800 A I (RMS) = 2830 A I SM = 29 10 3 A V 0 = 1.02 V r = 0.32 mw Bi-Directional Control hyristor 5SB 17N5200 Doc. No. 5SYA1036-04 May 07 wo thyristors integrated into one wafer

More information

ABB 5STP20N8500 Control Thyristor datasheet

ABB 5STP20N8500 Control Thyristor datasheet ABB 5SP20N8500 Control hyristor datasheet http://www.manuallib.com/abb/5stp20n8500-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed

More information

DRD5460Y20. Rectifier Diode KEY PARAMETERS FEATURES. 2000V 6654A 100kA I F(AV) I FSM ORDERING INFORMATION. Double Side Cooling. High Surge Capability

DRD5460Y20. Rectifier Diode KEY PARAMETERS FEATURES. 2000V 6654A 100kA I F(AV) I FSM ORDERING INFORMATION. Double Side Cooling. High Surge Capability Rectifier Diode Replaces DS4171-6.0 February 2003 Datasheet DS2102SY-DS2102SV DS6231-1 February 2018 (LN35176) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability V RRM I F(AV) I FSM 2000V

More information

Sonic Fast Recovery Diode

Sonic Fast Recovery Diode DHG4010HB Sonic ast ecovery Diode 10 M I 2x trr 0 ns High Performance ast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DHG4010HB Backside: cathode eatures / dvantages: pplications:

More information

DRD2960Y40. Rectifier Diode FEATURES KEY PARAMETERS APPLICATIONS V RRM I F(AV) I FSM 4000V 2956A 62500A ORDERING INFORMATION. Double Side Cooling

DRD2960Y40. Rectifier Diode FEATURES KEY PARAMETERS APPLICATIONS V RRM I F(AV) I FSM 4000V 2956A 62500A ORDERING INFORMATION. Double Side Cooling Rectifier Diode DS5983 January 2011 (LN28004) FEATURES Double Side Cooling High Surge Capability APPLICATIONS Rectification Free-wheel Diode DC Motor Control Power Supplies Welding Battery Chargers KEY

More information

DCR860D18. Phase Control Thyristor KEY PARAMETERS FEATURES 1800 V 860 A A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION

DCR860D18. Phase Control Thyristor KEY PARAMETERS FEATURES 1800 V 860 A A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION Phase Control Thyristor DS626-1 April 211 (LN28237) FEATURES Double Side Cooling High Surge Capability APPLICATIONS KEY PARAMETERS V DRM I T(AV) I TSM dv/dt* di/dt 18 V 86 A 115 A 1 V/µs 2 A/µs * Higher

More information

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) V RM = 6500 V I (AV)M = 1405 A I (RMS) = 2205 A I SM = 22 10 3 A V 0 = 1.2 V r = 0.6 m Bi-Directional Control hyristor 5SB 13N6500 Doc. No. 5SYA1035-04 Aug. 10 wo thyristors integrated into one wafer Patented

More information

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated)

The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) V DM = 2800 V I (AV)M = 2630 A I (RMS) = 4130 A I SM = 43 10 3 A V 0 = 0.85 V r = 0.16 mw Bi-Directional Control hyristor 5SB 24Q2800 Doc. No. 5SYA1053-02 May 07 wo thyristors integrated into one wafer

More information

Sonic Fast Recovery Diode

Sonic Fast Recovery Diode DH2x6-18A Sonic Fast Recovery Diode RRM = 18 I FA = 2x 6 A t = 23 ns rr High Performance Fast Recovery Diode Low Loss and Soft Recovery Anti-parallel legs Part number DH2x6-18A Backside: Isolated 2 1 3

More information

ABB 5STP16F2800 Control Thyristor datasheet

ABB 5STP16F2800 Control Thyristor datasheet ABB 5SP16F2800 Control hyristor datasheet http://www.manuallib.com/abb/5stp16f2800-control-thyristor-datasheet.html Patented free-floating silicon technology Low on-state and switching losses Designed

More information

HFB50HC20. Ultrafast, Soft Recovery Diode FRED. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 50A

HFB50HC20. Ultrafast, Soft Recovery Diode FRED. Features. Description. Absolute Maximum Ratings.  1 PD A V R = 200V I F(AV) = 50A PD - 94308A FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic V R = 200V I F(AV) = 50A t rr = 35ns Description

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt TM

Ultrafast Soft Recovery Diode, 60 A FRED Pt TM Vishay High Power Products 60EPU04 Ultrafast Soft Recovery Diode, 60APU04 FEATURES Ultrafast recovery Cathode to base PRODUCT SUMMARY t rr (typical) (AV) 2 1 3 Cathode Anode TO-247AC modified Cathode to

More information

Sonic Fast Recovery Diode

Sonic Fast Recovery Diode Sonic Fast ecovery Diode 1800 M I FA t rr 300 ns High Performance Fast ecovery Diode Low Loss and Soft ecovery Single Diode Part number Backside: cathode 3 1 Features / Advantages: Applications: Package:

More information

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40

provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40 APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off

More information

Hyperfast Rectifier, 8 A FRED Pt TM

Hyperfast Rectifier, 8 A FRED Pt TM Base cathode 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial level

More information

Hyperfast Rectifier, 15 A FRED Pt TM

Hyperfast Rectifier, 15 A FRED Pt TM 15ETH6S Base cathode 2 15ETH6-1 2 FEATURES Hyperfast recovery time Low forward voltage drop Low leakage current 175 C operating junction temperature Single die center tap module Designed and qualified

More information

SAFEIR Series 20ETS12, 20ETS12S

SAFEIR Series 20ETS12, 20ETS12S SAFEIR Series 0ETS, 0ETSS INPUT RECTIFIER DIODE Description/Features The 0ETS.. rectifier SAFEIR series has been optimized for very low forward voltage drop, with moderate leakage. The glass passivation

More information

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd

Symbol Parameters Test Conditions Min Typ Max Unit R thjc. Per IGBT 0.09 K/W R thjcd 2V 2A IGBT Module RoHS Features Ultra low loss High ruggedness High short circuit capability Positive temperature coefficient With fast free-wheeling diodes Agency Approvals Applications Inverter Converter

More information

Standard Recovery Diodes, (Hockey PUK Version), 2100 A

Standard Recovery Diodes, (Hockey PUK Version), 2100 A Standard Recovery Diodes, (Hockey PUK Version), 2 A VS-SD2C..L Series B-PUK (DO-2AB) PRIMARY CHARACTERISTICS I F(AV) 2 A Package B-PUK (DO-2AB) Circuit configuration Single FEATURES Wide current range

More information

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. V A Thunderbolt IGBT & FRED The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Thunderbolt IGBT combined with an APT free-wheeling ultrafast Recovery

More information

Phase Control Thyristors (Hockey PUK Version), 1745 A

Phase Control Thyristors (Hockey PUK Version), 1745 A Phase Control Thyristors (Hockey PUK Version), 1745 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Designed and

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Ultrafast Soft Recovery Diode, 60 A FRED Pt 60EPU04PbF Cathode to base PRODUCT SUMMARY t rr (AV) 2 1 3 Cathode Anode TO247AC modified 60APU04PbF Cathode to base 2 1 3 Anode Anode TO-247AC 50 ns 60 A 400 V FEATURES Ultrafast recovery 175 C operating

More information

Absolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode.

Absolute Maximum Ratings Parameters Max Units. = 140 C 15 A I FSM Non Repetitive Peak Surge T J. Case Styles 15ETH06S. Base. Cathode. 5ETH6 5ETH6S 5ETH6- Hyperfast Rectifier Features Hyperfastfast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Single Die Center Tap Module t rr = ns typ.

More information

SAFEIR Series 10ETS12PbF

SAFEIR Series 10ETS12PbF Bulletin I9 /04 SAFEIR Series 0ETSPbF INPUT RECTIFIER DIODE Lead-Free ("PbF" suffix) V F < V @ 0A I FSM = 00A Description/ Features V RRM = 00V The 0ETSPbF rectifier SAFEIR series has been optimized for

More information

Hyperfast Rectifier, 15 A FRED Pt TM

Hyperfast Rectifier, 15 A FRED Pt TM 5ETX6PbF Base cathode 2 5ETX6FPPbF FEATURES Benchmark ultralow forward voltage drop Hyperfast recovery time Low leakage current 75 C operating junction temperature Fully isolated package (V INS = 25 V

More information

Phase Control Thyristors (Hockey-PUK Version), 2310 A

Phase Control Thyristors (Hockey-PUK Version), 2310 A Phase Control Thyristors (Hockey-PUK Version), 2310 A VS- FEATURES Center amplifying gate Metal case with ceramic insulator International standard case K-PUK (A-24) High profile hockey PUK Material categorization:

More information

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247 HiPerED² M 3 I x 15 t 35ns rr High Performance ast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPG33HB Backside: cathode eatures / dvantages: pplications: Package: TO-7 Planar passivated

More information

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247 HiPerFED² M I F 2x t 45ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPGHB Backside: cathode Features / dvantages: pplications: Package: TO-247 Planar passivated

More information

Phase Control Thyristors (Hockey PUK Version), 1350 A

Phase Control Thyristors (Hockey PUK Version), 1350 A Phase Control Thyristors (Hockey PUK Version), 1350 A FEATURES Center amplifying gate Metal case with ceramic insulator International standard case B-PUK (TO-200AC) Designed and qualified for industrial

More information

Features / Advantages: Applications: Package: TO-240AA

Features / Advantages: Applications: Package: TO-240AA hyristor Module RRM = 2x 2 A = 6A =.2 Phase leg Part number MCD56-2ioB Backside: isolated 3 2 5 Features / Advantages: Applications: Package: O-2AA hyristor for line frequency Planar passivated chip Long-term

More information

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247 HiPerFED² M I F 2x 0 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPGHB Backside: cathode Features / dvantages: pplications: Package: TO-27 Planar passivated

More information

Ultrafast Rectifier, 30 A FRED Pt TM

Ultrafast Rectifier, 30 A FRED Pt TM Base common cathode 2 FEATURES Ultrafast recovery time Low forward voltage drop Low leakage current 75 C operating junction temperature Lead (Pb)-free ( PbF suffix) Designed and qualified for industrial

More information

Fast Recovery Diodes (Hockey PUK Version), 375 A

Fast Recovery Diodes (Hockey PUK Version), 375 A VS- Fast Recovery Diodes (Hockey PUK Version), 375 A B-PUK (DO-AB) PRIMARY CHARACTERISTICS I F(AV) 375 A Package B-PUK (DO-AB) Circuit configuration Single FEATURES High power fast recovery diode series

More information

Features / Advantages: Applications: Package: TO-247

Features / Advantages: Applications: Package: TO-247 HiPerED² M I 2x 3 t 55ns rr High Performance ast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPHB Backside: cathode eatures / dvantages: pplications: Package: TO-247 Planar passivated

More information

DCR7610H28. Phase Control Thyristor KEY PARAMETERS FEATURES 2800 V 7610 A A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION

DCR7610H28. Phase Control Thyristor KEY PARAMETERS FEATURES 2800 V 7610 A A I T(AV) I TSM APPLICATIONS ORDERING INFORMATION Phase Control Thyristor DS42-1 April 211 (LN28253) FEATURES KEY PARAMETERS Double Side Cooling High Surge Capability V DRM I T(AV) I TSM dv/dt* di/dt 28 V 761 A 15 A 1 V/µs 2 A/µs APPLICATIONS High Power

More information

MAXIMUM ALLOWABLE RATINGS

MAXIMUM ALLOWABLE RATINGS PROTON-ELECTROTEX RUSSIA Phase Control Thyristor High power cycling capability Low on-state and switching losses Designed for traction and industrial applications Mean on-state current ITA Repetitive peak

More information

Fast Soft Recovery Rectifier Diode, 60 A

Fast Soft Recovery Rectifier Diode, 60 A 6EPF.. Base cathode 3 Cathode Anode TO-47AC modified PRODUCT SUMMARY V F at 3 A t rr V RRM 6CPF.. Base cathode 3 Anode Anode TO-47AC

More information

Standard Recovery Diodes, (Hockey PUK Version), 3000 A

Standard Recovery Diodes, (Hockey PUK Version), 3000 A Standard Recovery Diodes, (Hockey PUK Version), 3000 A VS- K-PUK (DO-200AC) PRIMARY CHARACTERISTICS I F(AV) 3000 A Package K-PUK (DO-200AC) Circuit configuration Single FEATURES Wide current range High

More information

HEXFRED Ultrafast Soft Recovery Diode, 6 A

HEXFRED Ultrafast Soft Recovery Diode, 6 A N/C Base cathode + 2 PRODUCT SUMMARY V R 200 V V F at 6 A at 25 C 3.0 V (AV) 6 A t rr (typical) 26 ns (maximum) 50 C Q rr (typical) 6 nc di (rec)m /dt (typical) at 25 C 0 A/µs I RRM (typical) 4.4 A D 2

More information

8ETU04PbF. Ultrafast Rectifier. Case Styles. t rr = 60ns I F(AV) = 8Amp V R = 400V. Bulletin PD rev. A 10/06. Features

8ETU04PbF. Ultrafast Rectifier. Case Styles. t rr = 60ns I F(AV) = 8Amp V R = 400V. Bulletin PD rev. A 10/06. Features 8ETU04PbF Ultrafast Rectifier Features Ultrafast Recovery Time Low Forward Voltage Drop Low Leakage Current 75 C Operating Junction Temperature Lead-Free ("PbF" data sheet) t rr = 60ns I F(AV) = 8Amp V

More information

Sonic Fast Recovery Diode

Sonic Fast Recovery Diode Sonic Fast ecovery Diode = 18 M I = 6 F = 23 ns High Performance Fast ecovery Diode Low Loss and Soft ecovery Single Diode Part number DH6-18 Backside: cathode 3 1 Features / dvantages: pplications: Package:

More information

Ultrafast Soft Recovery Diode, 60 A FRED Pt

Ultrafast Soft Recovery Diode, 60 A FRED Pt 60EPU06PbF 60APU06PbF FEATURES Ultrafast recovery 175 C operating junction temperature Compliant to RoHS directive 2002/95/EC Designed and qualified for industrial level Cathode to base 2 1 3 Cathode Anode

More information

SiC Schottky Diode DCG20C1200HR. Ultra fast switching Zero reverse recovery Common Cathode. V RRM = 1200 V I FAV = 2x 12.5 A.

SiC Schottky Diode DCG20C1200HR. Ultra fast switching Zero reverse recovery Common Cathode. V RRM = 1200 V I FAV = 2x 12.5 A. DCG2C12HR SiC Schottky Diode RRM = 12 I F = 2x 12.5 Ultra fast switching Zero reverse recovery Common Cathode Part number DCG2C12HR Backside: isolated E72873 1 2 3 Features / dvantages: Ultra fast switching

More information

Fast Soft Recovery Rectifier Diode, 30 A

Fast Soft Recovery Rectifier Diode, 30 A 3EPF.., 3CPF.. Soft Recovery Series 3EPF.. 3CPF.. Rectifier Diode, 3 A FEATURES/DESCRIPTION The 3EPF.. and 3CPF.. soft recovery rectifier series has been optimized for combined short reverse recovery time

More information

QRD Preliminary. High Voltage Diode Module 200 Amperes/3300 Volts

QRD Preliminary. High Voltage Diode Module 200 Amperes/3300 Volts QRD3324 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com High Voltage Diode Module 2 Amperes/33 Volts L NUTS (3TYP) F A D F C J 7 8 B E H 1 2 3 4

More information

Super Junction MOSFET

Super Junction MOSFET APT77N6BC6 APT77N6SC6 6V 77A.4Ω CO LMOS Power Semiconductors Super Junction MOSFET Ultra Low R DS(ON) TO-247 Low Miller Capacitance D 3 PAK Ultra Low Gate Charge, Q g Avalanche Energy Rated Extreme dv

More information

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G)

APT50GS60BRDQ2(G) APT50GS60SRDQ2(G) APTGSBRDQ(G) APTGSSRDQ(G) V, A, (ON) =.8V Typical Thunderbolt High Speed NPT IGBT with Anti-Parallel 'DQ' Diode The Thunderbolt HS series is based on thin wafer non-punch through (NPT) technology similar

More information

Ultra Fast NPT - IGBT

Ultra Fast NPT - IGBT APT4GR2B2D3 2V, 4A, (on) = 2.V Typical Ultra Fast NPT - IGBT The Ultra Fast NPT - IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Ultra Fast NPT-IGBT offers

More information

Features / Advantages: Applications: Package: TO-263 (D2Pak)

Features / Advantages: Applications: Package: TO-263 (D2Pak) DPGCPC HiPerFED² M I F x 30 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery Common Cathode Part number DPGCPC Backside: cathode 3 Features / dvantages: pplications: Package: TO-63

More information

DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996

DATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996 DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D7 Supersedes data of April 996 996 Sep 7 FEATURES Small plastic SMD package Switching speed:. 5 ns General application Continuous reverse voltage:.

More information

= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

= 25 C = 100 C = 150 C. Watts T J = 0V, I C. = 500µA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V) V The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior

More information

Standard Recovery Diodes, (Hockey PUK Version), 800 A

Standard Recovery Diodes, (Hockey PUK Version), 800 A Standard Recovery Diodes, (Hockey PUK Version), 8 A VS- A-PUK (DO-AA) PRIMARY CHARACTERISTICS I F(AV) 8 A Package A-PUK (DO-AA) Circuit configuration Single FEATURES Wide current range High voltage ratings

More information

Fast Soft Recovery Rectifier Diode, 20 A

Fast Soft Recovery Rectifier Diode, 20 A 2ETF..S Soft Recovery Series D 2 PAK (SMD-22) Base common cathode + 2 Anode - - Rectifier Diode, 2 A 3 Anode FEATURES/DESCRIPTION The 2ETF..S fast soft recovery rectifier series has been optimized for

More information

Features / Advantages: Applications: Package: SOT-227B (minibloc)

Features / Advantages: Applications: Package: SOT-227B (minibloc) FED = 6 M I = x 96 A FA trr = 5 ns Fast ecovery Epitaxial Diode Low Loss and Soft ecovery Parallel legs Part number DSEIx-6A Backside: isolated Features / Advantages: Applications: Package: SOT-7B (minibloc)

More information

HEXFRED Ultrafast Soft Recovery Diode, 15 A

HEXFRED Ultrafast Soft Recovery Diode, 15 A Vishay High Power Products TO-247AC modified HEXFRED Base common cathode 2 1 3 Cathode Anode FEATURES Ultrafast recovery Ultrasoft recovery Very low I RRM Very low Q rr Specified at operating conditions

More information

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A

Fast Recovery Diodes (Stud Version), 6 A, 12 A, 16 A VS-6FL(R), VS-2FL(R), VS-6FL(R) Series Fast Recovery Diodes (Stud Version), 6 A, 2 A, 6 A DO-23AA (DO-4) FEATURES Short reverse recovery time Low stored charge Wide current range Excellent surge capabilities

More information

/V RRM I T(AV) dv D di T. Repetitive Peak Off-state Voltage V. Repetitive Peak Reverse Voltage V RRM V. Symbol Parameter Conditions Max.

/V RRM I T(AV) dv D di T. Repetitive Peak Off-state Voltage V. Repetitive Peak Reverse Voltage V RRM V. Symbol Parameter Conditions Max. DGT304RE Reverse Blocking Gate Turn-off Thyristor DS5518-4 July 2014 (LN31738) FEATURES Reverse Blocking Capability Double Side Cooling High Reliability In Service High Voltage Capability Fault Protection

More information

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant

SKM200GAH123DKL 1200V 200A CHOPPER Module August 2011 PRELIMINARY RoHS Compliant SKM2GAH123DKL 12V 2A CHOPPER Module August 211 PRELIMINARY RoHS Compliant FEATURES Ultra Low Loss High Ruggedness High Short Circuit Capability V CE(sat) With Positive Temperature Coefficient With Fast

More information

301U(R) SERIES 300A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics

301U(R) SERIES 300A. Stud Version STANDARD RECOVERY DIODES. Features. Typical Applications. Major Ratings and Characteristics 301U(R) SERIES STANDARD RECOVERY DIODES Stud Version Features Wide current range High voltage ratings up to 2500V High surge current capabilities Stud cathode and stud anode version High resistance to

More information

Primary MTP IGBT Power Module

Primary MTP IGBT Power Module Primary MTP IGBT Power Module MTP PRIMARY CHARACTERISTICS FRED Pt AP DIODE, T J = 5 C V RRM 6 V I F(DC) at C A V F at 25 C at 6 A 2.8 V IGBT, T J = 5 C V CES 6 V V CE(on) at 25 C at 6 A.98 V I C at C 83

More information

Inverter Grade Thyristors (Stud Version), 85 A

Inverter Grade Thyristors (Stud Version), 85 A Inverter Grade Thyristors (Stud Version), 85 A TO-94 (TO-209AC) PRIMARY CHARACTERISTICS Package TO-94 (TO-209AC) Circuit configuration Single SCR I T(AV) 85 A V DRM /V RRM 400 V, 0 V, 0 V, 0 V V TM 2.15

More information

High Voltage, Input Rectifier Diode, 20 A

High Voltage, Input Rectifier Diode, 20 A VS-2ETS..FPPbF Series, VS-2ETS..FP-M3 Series High Voltage, Input Rectifier Diode, 2 A FEATURES Very low forward voltage drop 2 TO-22 FULL-PAK 3 Cathode 2 3 Anode C max. operating junction temperature Designed

More information

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg

Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short

More information

Features / Advantages: Applications: Package: TO-220

Features / Advantages: Applications: Package: TO-220 DPG3PB HiPerFED² M I F x 15 t 35ns rr High Performance Fast ecovery Diode Low Loss and Soft ecovery ommon athode Part number DPG3PB Backside: cathode 1 3 Features / dvantages: pplications: Package: TO-

More information

Super Junction MOSFET

Super Junction MOSFET 65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche

More information

SiC Schottky Diode. Ultra fast switching Zero reverse recovery DCG85X1200NA. V RRM = 1200 V I FAV = 2x 41 A. prelimininary. Part number DCG85X1200NA

SiC Schottky Diode. Ultra fast switching Zero reverse recovery DCG85X1200NA. V RRM = 1200 V I FAV = 2x 41 A. prelimininary. Part number DCG85X1200NA DCG85X12N SiC Schottky Diode RRM = 12 I F = 2x 41 Ultra fast switching Zero reverse recovery Part number DCG85X12N Backside: isolated UL pending 2 3 1 4 Features / dvantages: Ultra fast switching Zero

More information