WESTCODE. An IXYS Company. Date:- 24 May, Data Sheet Issue:- 2. Provisional Data Extra Fast Recovery Diode Type F1600NC120

Transcription

1 WESTCODE An IXYS Company Absolute Maximum Ratings Provisional Data Extra ast Recovery Diode Type OLTAGE RATINGS Development Type No. x021nc120 Date:- 24 May, 2002 Data Sheet Issue:- 2 MAXIMUM LIMITS RRM Repetitive peak reverse voltage, (note 1) 1200 RSM Non-repetitive peak reverse voltage, (note 1) 1300 OTHER RATINGS MAXIMUM LIMITS I(A) Mean forward current, Tsink=55 C, (note 2) 1326 A I(A) Mean forward current. Tsink= C, (note 2) 605 A I(A) Mean forward current. Tsink= C, (note 3) 337 A I(RMS) Nominal RMS forward current, Tsink=25 C, (note 2) 2673 A I(d.c.) D.C. forward current, Tsink=25 C, (note 4) 2186 A ISM Peak non-repetitive surge tp=ms, RM=0.6RRM, (note 5) A ISM2 Peak non-repetitive surge tp=ms, RM, (note 5) A I 2 t I 2 t capacity for fusing tp=ms, RM=0.6RRM, (note 5) 2.00x 6 A 2 s I 2 t I 2 t capacity for fusing tp=ms, RM, (note 5) 2.42x 6 A 2 s THS Operating temperature range -40 to +125 C Tstg Storage temperature range -40 to +150 C Notes:- 1) De-rating factor of 0.13% per C is applicable for Tj below 25 C. 2) Double side cooled, single phase; 50Hz, 180 half-sinewave. 3) Single side cooled, single phase; 50Hz, 180 half-sinewave. 4) Double side cooled. 5) Half-sinewave, 125 C Tj initial. UNITS UNITS Provisional Data Sheet. Type Issue 2 Page 1 of 11 May, 2002

2 M WESTCODE An IXYS Company Characteristics Extra ast Diode Type PARAMETER MIN. TYP. MAX. TEST CONDITIONS (Note 1) UNITS Maximum peak forward voltage IM= IM=1600A 0 Threshold voltage rs Slope resistance Over current range A (Note 2) mω 01 Threshold voltage rs1 Slope resistance Over current range A mω RM Maximum forward recovery voltage di/dt = /µs, 25ºC RM Maximum forward recovery voltage di/dt = /µs IRRM Peak reverse current Rated RRM Rated RRM, Tj=25 C Qrr Recovered charge µc Qra Recovered charge, 50% Chord IM=, tp=0µs, di/dt=60a/µs, µc Irm Reverse recovery current r=50 (Note 3) A trr Reverse recovery time, 50% Chord µs Qrr Recovered charge µc Qra Recovered charge, 50% Chord IM=1600A, tp=500µs, di/dt=800a/µs, µc Irm Reverse recovery current r=800 A trr Reverse recovery time, 50% Chord µs R th(j-hs) Thermal resistance, junction to heatsink Double side cooled Single side cooled K/W Mounting force kn Wt Weight g Notes:- 1) Unless otherwise indicated T j =125 C. 2) 0 and r s were used to calculate the current ratings illustrated on page one 3) igures 3 to 6 were compiled using these conditions ma Provisional Data Sheet. Type Issue 2 Page 2 of 11 May, 2002

3 Notes on Ratings and Characteristics 1.0 oltage Grade Table RRM Extra ast Diode Type oltage Grade RSM R dc () () () De-rating actor A blocking voltage de-rating factor of 0.13% per C is applicable to this device for T j below 25 C. 3.0 ABCD Constants These constants (applicable only over current range of characteristic in igure 1) are the coefficients of the expression for the forward characteristic given below: where I = instantaneous forward current. 4.0 Reverse recovery ratings = A + B ln( I ) + C I (i) Q ra is based on 50% I rm chord as shown in ig.(a) below. (ii) Q rr is based on a 150µs integration time. 150µ s I.e. (iii) Q rr = 0 i rr. dt K actor = t t D I Provisional Data Sheet. Type Issue 2 Page 3 of 11 May, 2002

4 5.0 Reverse Recovery Loss Extra ast Diode Type The following procedure is recommended for use where it is necessary to include reverse recovery loss. rom waveforms of recovery current obtained from a high frequency shunt (see Note 1) and reverse voltage present during recovery, an instantaneous reverse recovery loss waveform must be constructed. Let the area under this waveform be E joules per pulse. A new sink temperature can then be evaluated from: T SINK = T E [ k + f R ] J ( MAX ) th( J Hs) Where k = ( C/W)/s E = Area under reverse loss waveform per pulse in joules (W.s.) f = Rated frequency in Hz at the original sink temperature. R th(j-hs) = d.c. thermal resistance ( C/W) The total dissipation is now given by: W ( tot ) W = ( original ) + E NOTE 1 - Reverse Recovery Loss by Measurement f This device has a low reverse recovered charge and peak reverse recovery current. When measuring the charge, care must be taken to ensure that: (a) AC coupled devices such as current transformers are not affected by prior passage of high amplitude forward current. (b) A suitable, polarised, clipping circuit must be connected to the input of the measuring oscilloscope to avoid overloading the internal amplifiers by the relatively high amplitude forward current signal. (c) Measurement of reverse recovery waveform should be carried out with an appropriate critically damped snubber, connected across diode anode to cathode. The formula used for the calculation of this snubber is shown below: R 2 = 4 C S r di dt Where: r = Commutating source voltage C S = Snubber capacitance R = Snubber resistance Provisional Data Sheet. Type Issue 2 Page 4 of 11 May, 2002

5 6.0 Computer Modelling Parameters 6.1 Device Dissipation Calculations I A = o + o + 4 ff r W 2 ff r Where 0 = 1.32, r s = 0.268mΩ ff = form factor (normally unity for fast diode applications) W A T = R T = T th j( MAX ) T 6.2 Calculation of Hs s s A using ABCD Coefficients Extra ast Diode Type The forward characteristic I s, on page 6 is represented in two ways; (i) the well established o and r s tangent used for rating purposes and (ii) a set of constants A, B, C, and D forming the coefficients of the representative equation for in terms of I given below: = A + B ln( I ) + C I + D The constants, derived by curve fitting software, are given in this report for hot characteristics. The resulting values for agree with the true device characteristic over a current range, which is limited to that plotted. 125 C Coefficients A B C x -5 D I Provisional Data Sheet. Type Issue 2 Page 5 of 11 May, 2002

6 Curves igure 1 orward characteristics of Limit device Instantaneous forward current - I M (A) C Maximum instantaneous forward voltage - M () igure 3 - Recovered charge, Q rr Total recovered charge - Q rr (µc) Commutation rate - di/dt (A/µs) Extra ast Diode Type igure 2 Maximum forward recovery voltage Maximum forward recovery voltage - RM () 125 C 25 C Rate of rise of forward current - di/dt (A/µs) igure 4 - Recovered charge, Q ra (50% chord) Recovered charge - Q ra (µc) Commutation rate - di/dt (A/µs) Provisional Data Sheet. Type Issue 2 Page 6 of 11 May, 2002

7 igure 5 - Maximum reverse current, I rm Reverse recovery current - I rm (A) Commutation rate - di/dt (A/µs) igure 7 Reverse recovery energy per pulse Energy per pulse - E r (mj) 0 R = 400 Measured without snubber 0 00 Commutation rate - di/dt (A/µs) Extra ast Diode Type igure 6 - Maximum recovery time, t rr (50% chord) Recovery time - t rr (µs) Commutation rate - di/dt (A/µs) igure 8 - Sine wave energy per pulse Energy per pulse (J) 1.00E E E A 1.00E-03 Provisional Data Sheet. Type Issue 2 Page 7 of 11 May, 2002

8 igure 9 - Sine wave frequency vs. pulse width requency (Hz) % Duty Cycle T Hs = 55 C igure 11 - Square wave energy per pulse Energy per pulse (J) 1.00E E E A di/dt =A/µs 1.00E-03 Extra ast Diode Type igure - Sine wave frequency vs. pulse width requency (Hz) T Hs = 85 C % Duty Cycle igure 12 - Square wave energy per pulse Energy per pulse (J) 1.00E E E A di/dt =/µs 1.00E-03 Provisional Data Sheet. Type Issue 2 Page 8 of 11 May, 2002

9 igure 13 - Square wave frequency vs. pulse width requency (Hz) % Duty Cycle di/dt =A/µs T Hs =55 C igure 15 - Square wave frequency vs. pulse width requency (Hz) di/dt =/µs T Hs = 55 C % Duty Cycle Extra ast Diode Type igure 14 - Square wave frequency vs. pulse width requency (Hz) di/dt =A/µs T Hs = 85 C % Duty Cycle igure 16 - Square wave frequency vs. pulse width requency (Hz) di/dt =/µs T Hs = 85 C % Duty Cycle Provisional Data Sheet. Type Issue 2 Page 9 of 11 May, 2002

10 igure 17 Maximum surge and I 2 t ratings Total peak half sine surge current - I SM (A) Duration of surge (ms) igure 18 Transient thermal impedance Thermal impedance (K/W) AD issue 2 Duration of surge 50Hz) Extra ast Diode Type T j (initial) = 125 C I 2 t: RRM I 2 t: R =60% RRM I SM : RRM I SM : R =60% RRM 1.00E E E+06 SSC 0.048K/W DSC 0.024K/W Time (s) Maximum I 2 t (A 2 s) Provisional Data Sheet. Type Issue 2 Page of 11 May, 2002

11 Outline Drawing & Ordering Information ORDERING INORMATION (Please quote digit code as below) Extra ast Diode Type 1600 NC!! 0 oltage code ixed ixed Type Code outline code DRM/ ixed code 12 Order code: 1200 RRM, 26.6mm clamp height capsule. IXYS Semiconductor GmbH Edisonstraße 15 D Lampertheim Tel: ax: marcom@ixys.de IXYS Corporation 3540 Bassett Street Santa Clara CA USA Tel: +1 (408) ax: +1 (408) sales@ixys.com WESTCODE An IXYS Company The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors Westcode Semiconductors Ltd. In the interest of product improvement, Westcode reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. Westcode Semiconductors Ltd PO Box 57 Chippenham Wiltshire SN15 1JL Tel: +44 (0) ax: +44 (0) WSL.sales@westcode,com Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA USA Tel: +1 (562) ax: +1 (562) WSI.sales@westcode.com Westcode Semiconductors Ltd. Provisional Data Sheet. Type Issue 2 Page 11 of 11 May, 2002