SiC Schottky Diode DCG20C1200HR. Ultra fast switching Zero reverse recovery Common Cathode. V RRM = 1200 V I FAV = 2x 12.5 A.

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1 DCG2C12HR SiC Schottky Diode RRM = 12 I F = 2x 12.5 Ultra fast switching Zero reverse recovery Common Cathode Part number DCG2C12HR Backside: isolated E Features / dvantages: Ultra fast switching Zero reverse recovery Zero forward recovery Temperature independent switching behavior Positive temperature coefficient of forward voltage T JM = pplications: Solar inverter Uninterruptible power supply (UPS) Welding equipment Switched-mode power supplies Medical equipment High speed rectifier Package: ISO247 Isolation oltage: 36 ~ Industry standard outline RoHS compliant Epoxy meets UL 94- Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight dvanced power cycling Terms & Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. 218 IXYS ll rights reserved 1-6

2 SiC Diode (per diode) DCG2C12HR Ratings Symbol Definitions Conditions min. typ. max. RSM max. non-repetitive reverse blocking voltage 12 RRM max. repetitive reverse blocking voltage T J = 25 C 12 I R reverse current R = RRM T J = 25 C T J = F forward voltage I F = 1 T J = 25 C I F = 2 I F = 1 T J = I F = 2 I F average forward current T C = 8 C rectangular, d =.5 T C = 1 C T J = I F25 I F8 I F1 forward current based on typ. F and r F T C = 25 C T C = 8 C T C = 1 C µ µ I FSM max forward surge current t = 1 ms,half sine (5 Hz) T J = 25 C t P = 1 µs, pulse R = 75 F threshold voltage T J = 125 C r F for power loss calculation slope resistance T J = 125 C Q C total capacitive charge R = 8, I F = 1 T J = 25 C di/dt = 2 /µs C total capacitance R = R = 4 T J = 25 C, f = 1 MHz R = 8 R thjc R thjh thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup mw mw 52 nc pf pf pf 1.9 K/W K/W 218 IXYS ll rights reserved 2-6

3 DCG2C12HR Package ISO247 Ratings Symbol Definitions Conditions min. typ. max. I RMS RMS current per terminal 7 T stg storage temperature C T op operation temperature C T J virtual junction temperature C Weight 6 g M D F C d Spp/pp d Spb/pb mounting torque mounting force with clip creepage distance on surface / striking distance through air ISOL isolation voltage t = 1 second t = 1 minute Nm N terminal to terminal 2.7 mm terminal to backside 4.1 mm 5/6 Hz; RMS; I ISOL < 1 m 36 3 Logo Part Number DateCode ssembly Code ssembly Line Product Marking abcdef YYWWZ Part description D = Diode C = SiC G = Extreme fast 2 = Current Rating [] C = Common Cathode 12 = Reverse oltage [] HR = ISO247 (3) Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard DCG2C12HR DCG2C12HR Tube Equivalent Circuits for Simulation I R *on die level, typical T J = 125 C T J = max threshold voltage R max slope resistance * mw 218 IXYS ll rights reserved 3-6

4 DCG2C12HR Outlines ISO247 E 2 3 Ø P 2x E3 2x D3 Q 2x E2 L1 2x b b4 2x e D L 3x b C 1 S E1 4 D1 D2 Dim. Millimeter Inches min max min max typ..5 typ..2 b b b c D D1 typ. 8.9 typ..35 D2 typ. 2.9 typ..114 D3 typ. 1. typ..39 E E1 typ typ..53 E E3 typ. 4. typ..157 e 5.46 BSC.215 BSC L L Ø P Q S 6.14 BSC.242 BSC IXYS ll rights reserved 4-6

5 DCG2C12HR SiC Diode (per leg) 2 1. I F T J = 25 C 125 C I R.8.6 [] 8 [m] T J = 25 C 125 C F [] Fig. 1 Typ. forward characteristics R [] Fig. 2 Typ. reverse characteristics I F(peak) 1% Duty 3% Duty 5% Duty 7% Duty DC P tot [] 4 3 [W] T C [ C] Fig. 3 Typ. current derating Fig. 4 Power derating T C [ C] Q C [nc] C 4 [pf] 3 T J = 25 C R [] Fig. 5 Typ. recovery charge vs. reverse voltage R [] Fig. 6 Typ. junction capacitance vs. reverse oltage 218 IXYS ll rights reserved 5-6

6 DCG2C12HR SiC Diode (per leg) E C [µj] R [] Fig. 7 Typical capacitance stored energy Z thjh [K/W] t p [ms] Fig. 8 Typ. transient thermal impedance 218 IXYS ll rights reserved 6-6

SiC Schottky Diode. Ultra fast switching Zero reverse recovery DCG85X1200NA. V RRM = 1200 V I FAV = 2x 41 A. prelimininary. Part number DCG85X1200NA

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