Blocking Maximum rated values 1) Parameter Symbol Conditions Value Unit. f = 5 Hz, tp = 10 ms, Tvj = C, Note 1. Note 1

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1 VRSM = 6000 V Rectifier Diode IF(AV)M = 4210 A IF(RMS) = 6610 A IFSM = A VF0 = 0.80 V rf = m 5SDD 50N6000 Doc. No. 5SYA Jun. 17 Patented free-floating silicon technology Low on-state and switching losses Optimum power handling capability Blocking Parameter Symbol Conditions Value Unit Max repetitive peak reverse voltage Max non-repetitive peak reverse voltage VRRM VRSM f = 50 Hz, tp = 10 ms, Tvj = C, Note 1 f = 5 Hz, tp = 10 ms, Tvj = C, Note V 6000 V Reverse leakage current IRRM VRRM, Tvj = C 400 ma Note 1: Voltage de-rating factor of 0.11% per C is applicable for T vj below +25 C. Mechanical data Mounting force FM kn Acceleration a Device unclamped 50 m/s 2 Acceleration a Device clamped 100 m/s 2 Weight m 2.8 kg Housing thickness H FM = 90 kn, Ta = 25 C mm Surface creepage distance DS 56 mm Air strike distance Da 22 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur RSM

2 On-state Average on-state current IF(AV)M Half sine wave, Tc = 90 C 4210 A RMS on-state current IF(RMS) 6610 A Peak non-repetitive surge tp = 10 ms, Tvj = 150 C, IFSM current 3 A sine half wave, Limiting load integral I 2 t VR= 0 V, after surge A 2 s On-state voltage VF IF = 5000 A, Tvj = 150 C V Threshold voltage VF0 Tvj = 150 C V Slope resistance rf IF = A m Switching Reverse recovery charge Qrr dif/dt = -10 A/µs, VR = 200 V µas Reverse recovery current IRM IF = 4000 A, Tvj = 150 C A Doc. No. 5SYA Jun. 17 page 2 of 6

3 Thermal Operating junction temperature range Tvj C Storage temperature range Tstg C Thermal resistance junction to case Thermal resistance case to heatsink Rth(j-c) Rth(j-c)A Rth(j-c)C Rth(c-h) Rth(c-h) Double-side cooled Anode-side cooled Cathode-side cooled Double-side cooled Single-side cooled 5.7 K/kW 11.4 K/kW 11.4 K/kW 1 K/kW 2 K/kW Analytical function for transient thermal impedance: Z th(j-c) (t) = n i1 R (1- e i Ri(K/kW) i(s) i -t/ i ) Fig. 1 Transient thermal impedance (junction-to-case) vs. time Doc. No. 5SYA Jun. 17 page 3 of 6

4 Max. on-state characteristic model: Max. on-state characteristic model: VF25 A B I C ln( I 1) D Tvj Tvj F Tvj F Valid for IF = A Tvj I F VF150 A B I C ln( I 1) D Tvj Tvj F Tvj F Valid for IF = A Tvj I F A 25 B 25 C 25 D 25 A 150 B 150 C 150 D Fig. 2 On-state voltage characteristics Fig. 3 On-state voltage characteristics Fig. 4 On-state power dissipation vs. mean on-state current Fig. 5 Max. permissible case temperature vs. mean on-state current Doc. No. 5SYA Jun. 17 page 4 of 6

5 Fig. 6 Reverse recovery charge vs. decay rate of on-state current Fig. 7 Peak reverse recovery current vs. decay rate of on-state current Doc. No. 5SYA Jun. 17 page 5 of 6

6 Fig. 8 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 High Power Rectifier Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2048 Field Measurements on High Power Press-Pack Semiconductors 5SYA 2051 Voltage Ratings of High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, Storage 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, Transportation 5SZK 9115 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Industry) 5SZK 9116 Specification of environmental class for presspack Diodes, PCTs and GTOs, Operation (Traction) Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA Jun. 17 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet