Asymmetric Integrated Gate- Commutated Thyristor 5SHY 35L4521

Transcription

1 V DRM = 4500 V I GQM = 4000 A I SM = A V (0) = 1.4 V r = m V DC = 2800 V Asymmetric Integrated Gate- Commutated hyristor High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory) Anode voltage monitoring Doc. No. 5SYA Feb. 12 Blocking Rep. peak off-state voltage V DRM Gate Unit energized 4500 V Permanent DC voltage for 100 FI failure rate of GC V DC Ambient cosmic radiation at sea level in open air. Gate Unit energized 2800 V Reverse voltage V RRM 17 V Rep. peak off-state current I DRM V D = V DRM, Gate Unit energized 50 ma Mechanical data (see Fig. 11, 12) Mounting force F m kn Pole-piece diameter D p ± 0.1 mm 85 mm Housing thickness H clamped F m =40kN mm Weight m 2.9 kg Surface creepage distance D s Anode to Gate 33 mm Air strike distance D a Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 41 mm Width IGC w ± 1.0 mm 173 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur

2 GC Data On-state (see Fig. 3, 4, 5, 6, 14, 15) Max. average on-state I (AV)M Half sine wave, C = 85 C, 1700 A current Double side cooled Max. RMS on-state current I (RMS) 2670 A Max. peak non-repetitive surge on-state current Limiting load integral Max. peak non-repetitive surge on-state current Limiting load integral Max. peak non-repetitive surge on-state current Limiting load integral Stray inductance between GC and antiparallel diode Critical rate of rise of onstate current I SM t p = 3 ms, j = 125 C, sine wave A after surge: V D = V R = 0 V I 2 t A 2 s I SM t p = 10 ms, j = 125 C, sine wave A after surge: V D = V R = 0 V I 2 t A 2 s I SM t p = 30 ms, j = 125 C, sine wave A after surge: V D = V R = 0 V I 2 t A 2 s L D Only relevant for applications with antiparallel diode to the IGC di /dt (cr) For higher di /dt and current lower than 100 A an external retrigger puls is required. 300 nh 200 A/µs On-state voltage V I = 4000 A, j = 125 C V hreshold voltage V (0) j = 125 C 1.4 V Slope resistance I = A m r Doc. No. 5SYA Feb. 12 page 2 of 11

3 urn-on switching (see Fig. 14, 15) Critical rate of rise of onstate current di /dt (cr) f = Hz, j = 125 C, I = 4000 A V D = 2800 V, I M 4800 A 1000 A/µs urn-on delay time t d(on) V D = 2800 V, j = 125 C, 3.5 µs urn-on delay time status t I = 4000 A, di/dt = V D / L i d(on) SF 7 µs feedback L i = 5 µh C CL = 10 µf, L CL = 0.3 µh Rise time t r D FWD = D CL = 5SDF 10H µs urn-on energy per pulse 1.5 J E on urn-off switching (see Fig. 7, 8, 10, 14, 15) Max. controllable turn-off current I GQM V DM V DRM, j = 125 C, V D = 2800 V, R S = 0.65, C CL = 10 µf, L CL 0.3 µh D FWD = D CL = 5SDF 10H A urn-off delay time t d(off) V D = 2800 V, j = 125 C, 7 µs urn-off delay time status t V DM V DRM, R S = 0.65 d(off) SF 7 µs feedback I GQ = 4000 A, L i = 5 µh C CL = 10 µf, L CL = 0.3 µh urn-off energy per pulse E off D FWD = D CL = 5SDF 10H J Doc. No. 5SYA Feb. 12 page 3 of 11

4 Gate Unit Data Power supply (see Fig. 2, 9, 10, 12, 13) Gate Unit voltage V Gin RMS AC square wave amplitude (15 khz V (Connector X1) - 100kHz) or DC voltage. No galvanic isolation to power circuit. Min. current needed to power up the Gate Unit Gate Unit power consumption I Gin Min Rectified average current see application note 5SYA A P Gin Max 130 W Internal current limitation I Gin Max Rectified average current limited by 8 the Gate Unit A Optical control input/output 2) Min. on-time t on 40 µs Min. off-time t off 40 µs Optical input power P on CS dbm Optical noise power P off CS -45 dbm Optical output power P on SF CS: Command signal dbm Optical noise power P off SF SF: Status feedback -50 dbm Valid for 1mm plastic optical fiber Optical output power P on SFA (POF) dbm Optical noise power P off SFA -50 dbm Pulse width threshold t GLICH Max. pulse width without response 400 ns External retrigger pulse width t retrig ns 2) Do not disconnect or connect fiber optic cables while light is on. Connectors 2) (see Fig. 11, 12, 13) Parameter Symbol Description Gate Unit power connector X1 AMP: MA-156, Part Number ) Anode voltage monitor connector J900 AMP: MA-156, Part Number ) LWL receiver for command signal CS Avago, ype HFBR-2521Z 4) LWL transmitter for status feedback SF Avago, ype HFBR-1528Z 4) LWL transmitter for anode feedback SFA Avago, ype HFBR-1528Z 4) 2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, 4) Avago echnologies, Doc. No. 5SYA Feb. 12 page 4 of 11

5 Anode Voltage Monitoring Voltage Feedback low level V th, low V Voltage Feedback high level V th, high R a = 62 kω ± 5% 5) V 5) For other voltage levels please see application note 5SYA 2031 or contact factory Visual feedback (see Fig. 13) Parameter Symbol Description Color Gate OFF LED1 "Light" when GC is off (green) Gate ON LED2 "Light" when gate-current is flowing (yellow) Fault LED3 "Light" when not ready / Failure (red) Power supply voltage OK LED4 "Light" when power supply is within specified range (green) Doc. No. 5SYA Feb. 12 page 5 of 11

6 hermal Junction operating temperature vj C Storage temperature range stg 0 60 C Ambient operational temperature a 0 50 C hermal resistance junction-to-case of GC R th(j-c) Double side cooled 8.5 K/kW hermal resistance case-toheatsink of GC R th(c-h) Analytical function for transient thermal impedance: Double side cooled 3 K/kW Z th(j-c) (t) = n i1 R(1- i e -t/ i i R i (K/kW) i (s) ) Max. urn-off current for Lifetime operation Fig. 1 ransient thermal impedance (junction-tocase) vs. time (max. values) calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off current vs. frequency for lifetime operation Doc. No. 5SYA Feb. 12 page 6 of 11

7 Max. on-state characteristic model: V 25 A B I C ln( I 1) D Valid for i = A I Max. on-state characteristic model: V 125 A B I C ln( I 1) D Valid for i = A I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 3 GC on-state voltage characteristics Fig. 4 GC on-state voltage characteristics Fig. 5 Surge on-state current vs. pulse length, halfsine wave, no reapplied voltage Fig. 6 Surge on-state current vs. number of pulses, half-sine wave, 10 ms, 50Hz, no reapplied voltage Doc. No. 5SYA Feb. 12 page 7 of 11

8 Fig. 7 GC turn-off energy per pulse vs. turn-off current Fig. 8 Safe Operating Area Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit Doc. No. 5SYA Feb. 12 page 8 of 11

9 Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Fig. 12 Detail A: pin out of supply connector X1 X1 1) V Gin (AC or DC+) 2) V Gin (AC or DC+) 3) Cathode 4) V Gin (AC or DC-) 5) V Gin (AC or DC-) Gate Unit GC X1 Supply (V AC ) Internal Supply (without galvanic isolation to power circuit) Ra Anode CS SF SFA LED1 LED2 LED3 LED4 Command Signal (Light) Status Feedback (Light) Anode Status Feedback (Light) x Rx Logic Monitoring urn- On Circuit urn- Off Circuit J900 Gate Cathode Fig. 13 Block diagram Doc. No. 5SYA Feb. 12 page 9 of 11

10 urn-on di /dt I M External Retrigger pulse urn-off V DSP V DM V D V D I 0.9 V D I 0.4 I GQ 0.1 V D V D CS CS CS SF SF SF t d(on) SF t retrig t d(off) SF t d(on) t d(off) t r t on t off Fig. 14 General current and voltage waveforms with IGC - specific symbols L i L CL L D R s D CL DU V DC C CL D FWD Fig. 15 est circuit Doc. No. 5SYA Feb. 12 page 10 of 11

11 Related documents: 5SYA 2031 Applying IGC Gate Units 5SYA 2032 Applying IGCs 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SYA 2046 Failure rates of IGCs due to cosmic rays 5SYA 2048 Field measurements on High Power Press Pack Semiconductors 5SYA 2051 Voltage ratings of high power semiconductors 5SZK SZK SZK 9110 Specification of enviromental class for pressure contact IGCs, OPERAION available on request, please contact factory Specification of enviromental class for pressure contact IGCs, SORAGE available on request, please contact factory Specification of enviromental class for pressure contact IGCs, RANSPORAION available on request, please contact factory Please refer to for current version of documents. ABB Switzerland Ltd Doc. No. 5SYA Feb. 12 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet