Commutated Thyristor 5SHY 55L4500
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1 V DRM = 4500 V Asymmetric Integrated Gate- I GQM = 5000 A I SM = A V (0) = 1.22 V r = 0.28 mw V DC = 2800 V Commutated hyristor 5SHY 55L4500 High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory) Doc. No. 5SYA April 13 Blocking Rep. peak off-state voltage V DRM Gate Unit energized 4500 V Permanent DC voltage for 100 FI failure rate of GC V DC Ambient cosmic radiation at sea level in open air. Gate Unit energized 2800 V Reverse voltage V RRM 17 V Rep. peak off-state I DRM V D = V DRM, Gate Unit energized 50 ma Mechanical data (see Fig. 11, 12) Mounting force F m kn Pole-piece diameter D p ± 0.1 mm 85 mm Housing thickness H mm Weight m 2.9 kg Surface creepage distance D s Anode to Gate 33 mm Air strike distance D a Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 41 mm Width IGC w ± 1.0 mm 173 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
2 GC Data On-state (see Fig. 3, 4, 5, 6, 14) Max. average on-state I (AV)M Half sine wave, C = 85 C, Double side cooled 1870 A Max. RMS on-state I (RMS) 2940 A Max. peak non-repetitive surge on-state I SM t p = 3 ms, j = 125 C, sine half wave, V D = V R = 0 V, after surge A Limiting load integral I 2 t A 2 s Max. peak non-repetitive surge on-state I SM t p = 10 ms, j = 125 C, sine half wave, V D = V R = 0 V, after surge A Limiting load integral I 2 t A 2 s Max. peak non-repetitive surge on-state I SM t p = 30 ms, j = 125 C, sine half wave, V D = V R = 0 V, after surge A Limiting load integral I 2 t A 2 s Stray inductance between GC and antiparallel diode Critical rate of rise of onstate L D Only relevant for applications with antiparallel diode to the IGC di /dt (cr) For higher di /dt and lower than 100 A an external retrigger puls is required. 300 nh 200 A/µs On-state voltage V I = 4000 A, j = 125 C V hreshold voltage V (0) j = 125 C V Slope resistance r I = A mw Doc. No. 5SYA April 13 page 2 of 9
3 urn-on switching (see Fig. 14, 15) Critical rate of rise of onstate di /dt (cr) f = Hz, j = 125 C, I = 5000 A V D = 2800 V, I M 7000 A 1000 A/µs urn-on delay time t d(on) V D = 2800 V, j = 125 C, 4 µs urn-on delay time status t I = 4000 A, di/dt = V D / L i d(on) SF 7 µs feedback L i = 3 µh C CL = 20 µf, L CL = 0.3 µh Rise time t r D FWD = D CL = 5SDF 10H µs urn-on energy per pulse E on 1.8 J urn-off switching (see Fig. 2, 7, 8, 10, 14, 15) Max. controllable turn-off Max. controllable turn-off I GQM1 V DM V DRM, j = C, I GQM2 R S = 0.35 W, C CL = 20 µf, L CL 0.3 µh, f = Hz 2) D FWD = D CL = 5SDF 10H4503 V D = 2800 V t on > 100µs V D = 2800 V 40µs < t on < 100µs 5000 A 4400 A urn-off delay time t d(off) V D = 2800 V, j = 125 C, 8 µs urn-off delay time status t V DM V DRM, R S d(off) SF = 0.35 W 7 µs feedback I GQ = 4000 A, L i = 3 µh C CL = 20 µf, L CL = 0.3 µh urn-off energy per pulse E off D FWD = D CL = 5SDF 10H J 2) Higher frequency is applicable with reduced max. turn-off conditions (contact factory). Doc. No. 5SYA April 13 page 3 of 9
4 Gate Unit Data Power supply (see Fig. 2, 9, 10, 12, 13) Gate Unit voltage (Connector X1) Min. needed to power up the Gate Unit V Gin RMS AC square wave amplitude (15 khz - 100kHz) or DC voltage. No galvanic isolation to power circuit. I Gin Min Rectified average see application note 5SYA V 2 A Gate Unit power consumption P Gin Max 130 W Internal limitation I Gin Max Rectified average limited by the Gate Unit 8 A Optical control input/output 3) Min. on-time t on 40 µs Min. off-time t off 40 µs Optical input power P on CS CS: Command signal dbm Optical noise power P off CS SF: Status feedback -45 dbm Optical output power P on SF Valid for 1mm plastic optical fiber dbm Optical noise power P off SF (POF) -50 dbm Pulse width threshold t GLICH Max. pulse width without response 400 ns External retrigger pulse width t retrig ns 3) Do not disconnect or connect fiber optic cables while light is on. Connectors 3) (see Fig. 11, 12, 13) Parameter Symbol Description Gate Unit power connector X1 AMP: MA-156, Part Number ) LWL receiver for command signal CS Avago, ype HFBR-2521Z 5) LWL transmitter for status feedback SF Avago, ype HFBR-1528Z 5) 3) Do not disconnect or connect fiber optic cables while light is on. 4) AMP, 5) Avago echnologies, Visual feedback (see Fig. 13) Parameter Symbol Description Color Gate OFF LED1 "Light" when GC is off (green) Gate ON LED2 "Light" when gate- is flowing (yellow) Fault LED3 "Light" when not ready / Failure (red) Power supply voltage OK LED4 "Light" when power supply is within specified range (green) Doc. No. 5SYA April 13 page 4 of 9
5 hermal Junction operating temperature vj C Storage temperature range stg 0 60 C Ambient operational temperature a 0 50 C hermal resistance junction-to-case of GC R th(j-c) Double side cooled 8.5 K/kW hermal resistance case-toheatsink of GC Analytical function for transient thermal impedance: R th(c-h) Double side cooled 3 K/kW Z th(j-c) (t) = n å i= 1 R(1- i e -t/ t i R i (K/kW) t i (s) Max. urn-off for Lifetime operation i ) Fig. 1 ransient thermal impedance (junction-to-case) vs. time (max. values) calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off vs. frequency for lifetime operation Doc. No. 5SYA April 13 page 5 of 9
6 Max. on-state characteristic model: V 25 = A + B I + C ln( I + 1) + D Valid for i = A I 5SHY 55L4500 Max. on-state characteristic model: V 125 = A + B I + C ln( I + 1) + D Valid for i = A I A 25 B 25 C 25 D 25 A 125 B 125 C 125 D 125 Max Max yp yp Fig. 3 GC on-state voltage characteristics Fig. 4 GC on-state voltage characteristics Fig. 5 Surge on-state vs. pulse length, halfsine wave, no reapplied voltage Fig. 6 Surge on-state vs. number of pulses, half-sine wave, 10 ms, 50 Hz, no reapplied voltage Doc. No. 5SYA April 13 page 6 of 9
7 Fig. 7 GC turn-off energy per pulse vs. turn-off Fig. 8 Safe Operating Area Fig. 9 Max. Gate Unit input power in chopper mode Fig. 10 Burst capability of Gate Unit Doc. No. 5SYA April 13 page 7 of 9
8 Max M4 (2x) ± ± ± ±0.3 50±0.3 50±0.3 50± H M4 (2x) M4 (2x) Detail A X ± ±0.1x (2x) SF CS 439 Fig. 11 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Fig. 12 Detail A: pin out of supply connector X1 X1 1) V Gin (AC or DC+) 2) V Gin (AC or DC+) 3) Cathode 4) V Gin (AC or DC-) 5) V Gin (AC or DC-) AS-IGC Gate Unit AS-GC X1 Supply (V GIN ) Internal Supply (No galvanic isolation to power circuit) Anode LED1 LED2 LED3 LED4 urn- On Circuit Gate CS SF Command Signal (Light) Status Feedback (Light) x Rx Logic Monitoring urn- Off Circuit Cathode Fig. 13 Block diagram Doc. No. 5SYA April 13 page 8 of 9
9 urn-on di /dt I M External Retrigger pulse urn-off V DSP V DM V D V D I 0.9 V D I 0.4 I GQ 0.1 V D V D CS CS CS SF SF SF t d(on) SF t retrig t d(off) SF t d(on) t d(off) t r t on t off Fig. 14 General and voltage waveforms with IGC - specific symbols L i L CL L D R s D CL DU V DC C CL D FWD Fig. 15 est circuit Related documents: 5SYA SYA SYA SYA SYA SYA SZK SZK SZK 9110 Applying IGC Gate Units Applying IGCs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of environmental class for pressure contact IGCs, OPERAION available on request, please contact factory Specification of environmental class for pressure contact IGCs, SORAGE available on request, please contact factory Specification of environmental class for pressure contact IGCs, RANSPORAION available on request, please contact factory Please refer to for version of documents. ABB Switzerland Ltd Doc. No. 5SYA April 13 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland elephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet
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