600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*

Transcription

1 G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applicatio that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive (ON) temperature coeffi cient. A built-in gate resistor eures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifi es gate drive design and minimizes losses. (B) TO-7 G D 3 PAK C E (S) V Field Stop Trench Gate: Low (on) Easy Paralleling μs Short Circuit Capability Intergrated Gate Resistor: Low EMI, High Reliability Applicatio: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS G C E MAXIMUM RATINGS All Ratings: T C unless otherwise specifi ed. Parameter APT7GNB_SDQ(G) S Collector-Emitter Voltage Gate-Emitter Voltage ±3 Volts 1 Continuous Collector Current T C 1 Continuous Collector T C = 11 C 93 M Pulsed Collector Current 1 SSOA Switching Safe Operating = 17 C V P D Total Power Dissipation 3 Watts,T STG T L Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering:.3" from Case for 1 Sec. - to 17 3 C STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio MIN TYP MAX Units V (BR)CES Collector-Emitter Breakdown Voltage ( = V, = ma) (TH) (ON) ES I GES (int) Gate Threshold Voltage ( =, = 1mA, T j )..8. Collector-Emitter On Voltage (,, T j ) Collector-Emitter On Voltage (,, T j ) Collector Cut-off Current ( = V, = V, T j ) Collector Cut-off Current ( = V, = V, T j ) Gate-Emitter Leakage Current ( = ±V) Intergrated Gate Resistor TBD CAUTION: These Devices are Seitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - Volts µa na Ω -73 Rev A 11-1

2 DYNAMIC CHARACTERISTICS Characteristic C ies C oes C res P Q g Q ge Q gc Input Capacitance Output Capacitance Reverse Trafer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge 3 Gate-Emitter Charge Gate-Collector ("Miller") Charge SSOA Switching Safe Operating Area Test Conditio Capacitance = V, = V f = 1 MHz Gate Charge = 3V = 17 C, =.3Ω 7, = 1V, L = 1µH, = V APT7GNB_SDQ(G) MIN TYP MAX 37 pf 1 9. V 8 3 nc 7 A SCSOA Short Circuit Safe Operating Area V CC = V,,, =.3Ω 7 µs t d(on) t r t d(off) t f E on1 E on E off t d(on) t r t d(off) t f E on1 E on E off Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-on Switching Energy (Diode) Turn-off Switching Energy Inductive Switching ( C) V CC = V = 1.Ω 7 = + C Inductive Switching (1 C) V CC = V = 1.Ω 7 = +1 C µj µj THERMAL AND MECHANICAL CHARACTERISTICS R θjc R θjc W T Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX.8 N/A.9 C/W gm -73 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. For Combi devices, I ces includes both IGBT and FRED leakages 3 See MIL-STD-7 Method 371. E on1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 1, but with a Silicon Carbide diode. E on is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 1,.) E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD-1. (See Figures 1, 3.) 7 is external gate resistance, not including (int) nor gate driver impedance. (MIC) 8 Continuous current limited by package pin temperature to 1A. Microsemi reserves the right to change, without notice, the specificatio and information contained herein.

3 TYPICAL PERFORMANCE CURVES V GS(TH), THRESHOLD VOLTAGE, COLLECTOR-TO-EMITTER VOLTAGE (V), COLLECTOR CURRENT (A), COLLECTOR CURRENT (A) (NORMALIZED) µs PULSE TEST<. % DUTY CYCLE, DC COLLECTOR CURRENT(A), COLLECTOR-TO-EMITTER VOLTAGE (V), GATE-TO-EMITTER VOLTAGE (V), COLLECTOR CURRENT (A) APT7GNB_SDQ(G) 1 V = 1 13 & 1V 1 1V 1 11V T 1V J 1 = 17 C 9V = - C 8V 7V , COLLECTER-TO-EMITTER VOLTAGE (V), COLLECTER-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics( ) FIGURE, Output Characteristics ( ) , GATE-TO-EMITTER VOLTAGE (V) GATE CHARGE (nc) FIGURE 3, Trafer Characteristics FIGURE, Gate Charge = 17 C = 1A = - C. µs PULSE TEST <. % DUTY CYCLE = 37.A = 1V = 3V = 1A = 37.A = 8V. µs PULSE TEST <. % DUTY CYCLE , GATE-TO-EMITTER VOLTAGE (V), Junction Temperature ( C) FIGURE, On State Voltage vs Gate-to- Emitter Voltage FIGURE, On State Voltage vs Junction Temperature Lead Temperature Limited , JUNCTION TEMPERATURE ( C) T C, CASE TEMPERATURE ( C) FIGURE 7, Threshold Voltage vs. Junction Temperature FIGURE 8, DC Collector Current vs Case Temperature -73 Rev A 11-1

4 APT7GNB_SDQ(G) -73 Rev A 11-1 SWITCHING ENERGY LOSSES (mj) E ON, TURN ON ENERGY LOSS (mj) t r, RISE TIME () t d(on), TURN-ON DELAY TIME () 3 = 1.Ω, L = 1µH, = V SWITCHING ENERGY LOSSES (mj) E OFF, TURN OFF ENERGY LOSS (mj) t f, FALL TIME () t d (OFF), TURN-OFF DELAY TIME () =1V, =1 C =1V, = C 1 = V T = V J, or =1 C 1 R = 1.Ω G = 1.Ω L = 1 µh L = 1µH E E FIGURE 9, Turn-On Delay Time vs Collector Current FIGURE 1, Turn-Off Delay Time vs Collector Current E E FIGURE 11, Current Rise Time vs Collector Current FIGURE 1, Current Fall Time vs Collector Current = V = +1V = 1.Ω E E FIGURE 13, Turn-On Energy Loss vs Collector Current FIGURE 1, Turn Off Energy Loss vs Collector Current = V = +1V = or 1 C, E on, 1A E on, 7A 1 E off, 1A E off, 1A E off, 7A E on, 37.A E off, 7A E on, 37.A E off, 37.A E off, 37.A , GATE RESISTANCE (OHMS), JUNCTION TEMPERATURE ( C) FIGURE 1, Switching Energy Losses vs. Gate Resistance FIGURE 1, Switching Energy Losses vs Junction Temperature = 1.Ω, L = 1µH, = V = V = +1V = 1.Ω = V = +1V = 1.Ω E on, 7A,, E on, 1A

5 TYPICAL PERFORMANCE CURVES 7, APT7GNB_SDQ(G) C, CAPACITANCE ( P F) 1, C ies C oes, COLLECTOR CURRENT (A) 1 1 C res , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS), COLLECTOR TO EMITTER VOLTAGE Figure 17, Capacitance vs Collector-To-Emitter Voltage Figure 18,Minimim Switching Safe Operating Area.3 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE t..1. Duty Factor D = t1 /t Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (SECONDS) Figure 19, Maximum Effective Traient Thermal Impedance, Junction-To-Case vs Pulse Duration Note: P DM t 1 1 F MAX, OPERATING FREQUENCY (khz) 1 T C = 7 C D = % = V = 1.Ω , COLLECTOR CURRENT (A) Figure, Operating Frequency vs Collector Current F max = min (f max, f max ). f max1 = t d(on) + t r + t d(off) + t f f max = P diss = P diss - P cond E on + E off - T C R θjc -73 Rev A 11-1

6 APT7GNB_SDQ(G) APT7DQ 1% Gate Voltage t d(on) V CC t r Collector Current % 9% % D.U.T. A Switching Energy 1% Collector Voltage Figure 1, Inductive Switching Test Circuit Figure, Turn-on Switching Waveforms and Definitio 9% Gate Voltage t d(off) t f 9% Collector Voltage 1% Collector Current Switching Energy Figure 3, Turn-off Switching Waveforms and Definitio -73 Rev A 11-1

7 TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE MAXIMUM RATINGS All Ratings: T C unless otherwise specifi ed. Characteristic / Test Conditio APT7GNBD_SDQ(G) (AV) (RMS) SM Maximum Average Forward Current (T C = 111 C, Duty Cycle =.) RMS Forward Current (Square wave, % duty) Non-Repetitive Forward Surge Current ( = C, 8.3ms) 3 3 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditio MIN TYP MAX V F Forward Voltage = A = 1A = A, Volts DYNAMIC CHARACTERISTICS Characteristic Test Conditio MIN TYP MAX Reverse Recovery Time = 1A, di F /dt = -1A/µs, = 3V, Reverse Recovery Time I Reverse Recovery Charge F = A, di F /dt = -A/µs = V, T C Maximum Reverse Recovery Current nc Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = A, di F /dt = -A/µs = V, T C nc Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current = A, di F /dt = -1A/µs = V, T C nc.7 Z θjc, THERMAL IMPEDANCE ( C/W) D = SINGLE PULSE Duty Factor D = t1 /t Peak = P DM x Z θjc + T C RECTANGULAR PULSE DURATION (seconds) FIGURE. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION Note: P DM t 1 t -73 Rev A 11-1

8 APT7GNB_SDQ(G), REVERSE RECOVERY CHARGE, FORWARD CURRENT (nc) (A) A A A = V = 17 C T J = - C V F, ANODE-TO-CATHODE VOLTAGE (V) -di F /dt, CURRENT RATE OF CHANGE(A/µs) Figure. Forward Current vs. Forward Voltage Figure. Reverse Recovery Time vs. Current Rate of Change = V 8A A A, REVERSE RECOVERY CURRENT, REVERSE RECOVERY TIME (A) () 1 1 = V A 8A A -73 Rev A di F /dt, CURRENT RATE OF CHANGE (A/µs) -di F /dt, CURRENT RATE OF CHANGE (A/µs) Figure 7. Reverse Recovery Charge vs. Current Rate of Change Figure 8. Reverse Recovery Current vs. Current Rate of Change C J, JUNCTION CAPACITANCE K f, DYNAMIC PARAMETERS (pf) (Normalized to 1A/µs) Duty cycle =. = 17 C , JUNCTION TEMPERATURE ( C) Case Temperature ( C) Figure 9. Dynamic Parameters vs. Junction Temperature Figure 3. Maximum Average Forward Current vs. CaseTemperature , REVERSE VOLTAGE (V) Figure 31. Junction Capacitance vs. Reverse Voltage (AV) (A)

9 TYPICAL PERFORMANCE CURVES V r APT7GNB_SDQ(G) +18V di F /dt Adjust APTGTBR V D.U.T. 3μH / Waveform PEARSON 878 CURRENT TRANSFORMER Figure 3. Diode Test Circuit Forward Conduction Current di F /dt - Rate of Diode Current Change Through Zero Crossing. - Maximum Reverse Recovery Current. Zero - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through and. passes through zero Area Under the Curve Defined by and. Figure 33, Diode Reverse Recovery Waveform and Definitio TO-7 Package Outline e1 SAC: Tin, Silver, Copper D 3 PAK Package Outline e3 SAC: Tin, Silver, Copper Collector.9 (.18).31 (.9) 1.9 (.9).9 (.98). (.1).79 (.31).8 (.819) 1. (.8).1 (.) BSC. (.177) Max (.78).3 (.8) 1.1 (.) 1. (.).1 (.87).9 (.1). (.1) BSC -Plcs. Dimeio in Millimeters and (Inches) 1.9 (.1) 1. (.).38 (.1). (.) 3. (.138) 3.81 (.1).87 (.113) 3.1 (.13) 1. (.).13 (.8) Gate Collector Emitter Collector (Heat Sink).98 (.19).8 (.) 1.7 (.8) 1.7 (.). (.18) {3 Plcs}. (.). (.1).178 (.7).7 (.1).8 (.11) 1. (.8) 1.3 (.) 1.9 (.8) 1.(.3) Revised /18/9 1.7 (.) 1. (.) 1.98 (.78).8 (.8). (.1) BSC { Plcs.} 1. (.1) 1.1(.) (.3) 13.99(.1) Emitter Collector Gate Dimeio in Millimeters (Inches) 13.1 (.8) 13.1(.3) Revised 8/9/ (.1). (.1) (Base of Lead) 11.1 (.3) 11.1 (.7) Heat Sink (Collector) and Leads are Plated Microsemi s products are covered by one or more of U.S. patents,89,81,,93,89,3,18,3,19,,,33,3,78,,83,78,13,83,,31,7,3,9,8,8,939,73, 7,3,,83,1,81,17,8,83 7,19,3,,9 7,17,88,939,73 7,3, and foreign patents. US and Foreign patents pending. All Rights Reserved. -73 Rev A 11-1