Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020
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1 VDRM = 5500 V ITGQM = 1800 A ITSM = A VT0 = 1.9 V rt = 0.9 m VDC = 3300 V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 19L6020 Doc. No. 5SYA Apr. 16 High snubberless turn-off rating Optimized for medium frequency High electromagnetic immunity Simple control interface with status feedback AC or DC supply voltage Option for series connection (contact factory) Blocking Repetitive peak off-state voltage Permanent DC voltage for 100 FIT failure rate of RC-GCT VDRM Gate Unit energized 5500 V VDC Ambient cosmic radiation at sea level in open air. Gate Unit energized 3300 V Repetitive peak off-state IDRM VD = VDRM, Gate Unit energized 50 ma Mechanical data Mounting force FM kn Pole-piece diameter Dp ± 0.1 mm 85 mm Housing thickness H clamped Fm = 44 kn mm Weight m 2.9 kg Surface creepage distance DS Anode to Gate 33 mm Air strike distance Da Anode to Gate 10 mm Length l ± 1.0 mm 439 mm Height h ± 1.0 mm 41 mm Width IGCT w ± 1.0 mm 173 mm 1) Maximum rated values indicate limits beyond which damage to the device may occur
2 GCT Data On-state 5SHX 19L6020 Average on-state IT(AV)M 840 A RMS on-state IT(RMS) Half sine wave, Tc = 85 C 1320 A Peak non-repetitive surge tp = 3 ms, Tv j= 125 C ITSM A sine half wave Limiting load integral I 2 t VD = VR = 0 V, after surge A 2 s Peak non-repetitive surge ITSM tp = 10 ms, Tvj = 125 C A sine half wave Limiting load integral I 2 t VD = VR = 0 V, after surge A 2 s Peak non-repetitive surge tp = 30 ms, Tvj = 125 C ITSM A sine half wave Limiting load integral I 2 t VD = VR = 0 V, after surge A 2 s Critical rate of rise of onstate dit/dt(cr) For higher dit/dt and lower than 100 A an external retrigger puls is required. 100 A/µs On-state voltage VT IT = 1800 A, Tvj = 125 C V Threshold voltage V(T0) 1.9 V IT = 500 A A, Tvj = 125 C Slope resistance rt 0.9 m Doc. No. 5SYA Apr. 16 page 2 of 14
3 Turn-on switching Critical rate of rise of on-state di/dtcrit f = Hz, Tvj = 125 C IT = 1800 A, VD = 3300 V ITM 2160, DCL = 5SDF 08H A/µs Turn-on delay time td(on) Tvj = 125 C 3.5 µs Turn-on delay time status td(on) SF VD = 3300 V, IT = 1800 A 7 µs feedback di/dt = VD / Li, Li = 7.6 µh Rise time tr CCL = 10 µf, LCL = 300 nh 1 µs DCL Turn-on energy per pulse = 5SDF 08H6005 Eon 1 J Turn-off switching Controllable turn-off ITGQM1 ITGQM2 VDM VDRM Tvj = 125 C RS = 0.65 CCL = 10 µf LCL 300 nh DCL = 5SDF 08H6005 VD = 3300 V VD = 3900 V 1800 A 900 A Turn-off delay time td(off) VD = 3300, Tvj = 125 C 7 µs VDM VDRM, Rs = 0.65 Ω Turn-off delay time status td(off) SF ITGQ = 1800 A, Li = 7.6 µh 7 µs feedback CCL = 10 µf, LCL = 300 nh Turn-off energy per pulse Eoff DCL = 5SDF 08H J Doc. No. 5SYA Apr. 16 page 3 of 14
4 Diode Data On-state 5SHX 19L6020 Average on-state IF(AV)M 340 A RMS on-state IF(RMS) Half sine wave, TC = 85 C 530 A Peak non-repetitive surge IFSM tp = 10 ms, Tvj = 125 C A VD = VR = 0 V Limiting load integral I 2 t A 2 s Peak non-repetitive surge IFSM tp = 3 ms, Tvj = 125 C 3 A VD = VR = 0 V Limiting load integral I 2 t A 2 s On-state voltage VF IT = 1800 A, Tvj = 125 C V Threshold voltage V(F0) Tvj = 125 C 2.7 V Slope resistance rf IT = 200 A A 2.23 m Turn-on Peak forward recovery voltage VFRM dif/dt = 510 A/µs, Tvj = 125 C 200 V dif/dt = 3000 A/µs, Tvj = 125 C 450 V Turn-off Decay rate on-state di/dt(cr) IFM = 900 A, Tvj = 125 C VDClink = 3900 V 510 A/µs IFM = 1800 A, Tvj = 125 C VDClink = 3300 V 510 A/µs Reverse recovery IRM Tvj = 125 C IFM = 1800 A, VD = 3300 V 780 A Reverse recovery charge Qrr -dif/dt = 510 A/µs, LCL = 300 nh 2800 µc Turn-off energy Erec CCL = 10 µf, Rs = 0.65 DCL = 5SDF 08H J Doc. No. 5SYA Apr. 16 page 4 of 14
5 Gate Unit Data Power supply Gate Unit voltage (Connector X1) Min. needed to power up the Gate Unit VGin RMS IGin Min AC square wave amplitude (15 khz khz) or DC voltage. No galvanic isolation to power circuit. Rectified average see application note 5SYA V 2 A Gate Unit power consumption PGin Max 130 W Internal limitation IGin Max Rectified average limited by the Gate Unit 8 A Optical control input/output CS On-time ton 40 µs CS: Command signal CS Off-time toff 40 µs Optical input power Pon CS dbm CS: Command signal Optical noise power Poff CS SF: Status feedback -45 dbm Optical output power Valid for 1mm plastic optical fiber Pon SF dbm (POF) Optical noise power Poff SF -50 dbm Pulse width threshold tglitch Max. pulse width without response 400 ns External retrigger pulse width tretrig ns Connectors 2) Parameter Symbol Description Gate Unit power connector X1 AMP: MTA-156, Part Number ) LWL receiver for command signal LWL transmitter for status feedback CS Avago, Type HFBR-2521Z 4) SF Avago, Type HFBR-1528Z 4) 2) Do not disconnect or connect fiber optic cables while light is on. 3) AMP, 4) Avago Technologies, Visual feedback Parameter Symbol Description Color Gate OFF LED1 "Light" when GCT is off (green) Gate ON LED2 "Light" when gate- is flowing (yellow) Fault LED3 "Light" when not ready / Failure (red) Power supply voltage OK LED4 "Light" when power supply is within specified range (green) Doc. No. 5SYA Apr. 16 page 5 of 14
6 Thermal Junction operating temperature Tvj C Storage temperature range Tstg 0 60 C Ambient operational temperature Ta 0 50 C Thermal resistance junction-tocase of GCT Thermal resistance case-toheatsink of GCT Thermal resistance junction-tocase of Diode Thermal resistance case-toheatsink of Diode Rth(j-c) 12.6 K/kW Rth(c-h) Double side cooled, 4.2 K/kW no heat flow between GCT and Rth(j-c) Diode part 26 K/kW Rth(c-h) 10.4 K/kW GCT Analytical function for transient thermal impedance: Z thjc (t) = n i1 R i(1- e -t/ i i Ri(K/kW) i(s) Diode i (K/kW) i(s) ) Fig. 1 Transient thermal impedance (junction-to-case) vs. time (max. values) Max. Turn-off for Lifetime operation calculated lifetime of on-board capacitors 20 years with slightly forced air cooling (air velocity > 0.5 m/s) strong air cooling allows for increased ambient temperature Fig. 2 Max. turn-off vs. frequency for lifetime operation Doc. No. 5SYA Apr. 16 page 6 of 14
7 GCT Part VT25 Max. on-state characteristic model: A B I C ln( I 1) D Tvj Tvj T Tvj T Valid for IT = A Tvj I T VT125 5SHX 19L6020 Max. on-state characteristic model: A B I C ln( I 1) D Tvj Tvj T Tvj T Valid for IT = A Tvj I T A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 3 GCT on-state voltage characteristics Fig. 4 GCT on-state voltage characteristics Fig. 5 GCT surge on-state vs. pulse length, half-sine wave, no reapplied voltage Fig. 6 GCT surge on-state vs. number of pulses, half-sine wave, 10ms, 50Hz, no reapplied voltage Doc. No. 5SYA Apr. 16 page 7 of 14
8 Fig. 7 GCT turn-off energy per pulse vs. turn-off Fig. 8 Safe Operating Area Doc. No. 5SYA Apr. 16 page 8 of 14
9 Diode Part Max. on-state characteristic model: VF25 A B I C ln( I 1) D Tvj Tvj T Tvj T Valid for IF = A Tvj I T VF125 5SHX 19L6020 Max. on-state characteristic model: A B I C ln( I 1) D Tvj Tvj T Tvj T Valid for IF = A Tvj I T A 25 B 25 C 25 D 25 A 125 B 125 C 125 D Fig. 9 Diode on-state voltage characteristics Fig.10 Diode on-state voltage characteristics Fig. 11 Diode surge on-state vs. pulse length, half-sine wave, no reapplied voltage Fig. 12 Diode surge on-state vs. number of pulses, half-sine wave, 10ms, 50Hz, no reapplied voltage Doc. No. 5SYA Apr. 16 page 9 of 14
10 Fig. 13 Upper scatter range of Turn-off energy per pulse vs. turn-off Fig. 14 Upper scatter range of Turn-off energy per pulse vs. reverse rise rate Fig. 15 Upper scatter range of reverse recovery charge vs reverse rise rate Fig. 16 Upper scatter range of reverse recovery charge vs reverse rise rate Doc. No. 5SYA Apr. 16 page 10 of 14
11 Fig. 17 Diode Safe Operating Area Fig. 18 Max. Gate Unit input power in chopper mode Fig. 19 Burst capability of Gate Unit Doc. No. 5SYA Apr. 16 page 11 of 14
12 SHX 19L ± ±0.3 H 41 Max M4 (2x) M4 (2x) Detail A M4 (2x) ±0.5 X1 50±0.3 50± ±0.3 50± ± ±0.1x (2x) SF CS 439 Fig. 20 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise X1 1) VGin (AC or DC+) 2) VGin (AC or DC+) 3) Cathode 4) VGin (AC or DC-) 5) VGin (AC or DC-) Fig. 21 Detail A: pin out of supply connector X1 RC-IGCT Gate Unit RC-GCT X1 Supply (V GIN ) Internal Supply (No galvanic isolation to power circuit) Anode LED1 LED2 LED3 LED4 Turn- On Circuit Gate CS SF Command Signal (Light) Status Feedback (Light) Tx Rx Logic Monitoring Turn- Off Circuit Cathode Fig. 22 Block diagram Doc. No. 5SYA Apr. 16 page 12 of 14
13 Turn-on di T/dt I TM External Retrigger pulse Turn-off V DSP V DM V D V D I T 0.9 V D I T 0.4 I TGQ 0.1 V D V D CS CS CS SF SF SF t d(on) SF t retrig t d(off) SF t d(on) t d(off) t r t on t off Fig. 23 General and voltage waveforms with IGCT-specific symbols V F (t), I F (t) V FR di F /dt I F (t) -di F /dt I F (t) V F (t) V F (t) Q rr t fr tfr (typ) 10 µs I RM V R (t) t Fig. 24 General and voltage waveforms with Diode-specific symbols Doc. No. 5SYA Apr. 16 page 13 of 14
14 L i L CL R s D CL DUT GCT - part V DC C CL DUT Diode - part L Load Fig. 25 Test circuit Related documents: 5SYA SYA SYA SYA SYA SYA SZK SZK SZK 9110 Applying IGCT Gate Units Applying IGCTs Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Failure rates of IGCTs due to cosmic rays Field measurements on High Power Press Pack Semiconductors Voltage ratings of high power semiconductors Specification of enviromental class for pressure contact IGCTs, OPERATION available on request, please contact factory Specification of environmental class for pressure contact IGCTs, STORAGE available on request, please contact factory Specification of environmental class for pressure contact IGCTs, TRANSPORTATION available on request, please contact factory Please refer to for version of documents. ABB Switzerland Ltd Doc. No. 5SYA Apr. 16 Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0) Fax +41 (0) abbsem@ch.abb.com Internet
Ambient cosmic radiation at sea level in open air. Gate Unit energized
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INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
Features. n-channel TO-220AB. 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast: Optimized for high operating frequencies >5 khz, and Short Circuit Rated to µs @ 25 C, V GE
PINNING - SOD113 PIN CONFIGURATION SYMBOL. case
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass-passivated double diffused SYMBOL PARAMETER MAX. UNIT rectifier diode in a full pack plastic envelope featuring low forward V RRM Repetitive peak reverse
provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the APT80GA60LD40
APT8GA6LD 6V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low E off is achieved through leading technology silicon design and lifetime control processes. A reduced E off
n-channel D 2 Pak 1
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features High short circuit rating optimized for motor control, t sc =µs, @360V V CE (start),, V GE = 5V Combines low conduction losses
Soft Recovery Diode Type M0451YC160 to M0451YC200
Date:- 04 Nov 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0451YC160 to M0451YC200 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 1600-2000
Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21)
Date:- 1 Apr, 2003 Data Sheet Issue:- 2 Distributed Gate Thyristor Types R1275NS14# to R1275NS21# (Old Type Number: R395CH21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive
STTH8R02D-Y. Automotive ultrafast rectifier
Automotive ultrafast rectifier Datasheet - production data A1 A2 K1 K2 Description The STTH8R02D-Y is especially suited for switching mode base drive and transistor circuits. The device is also intended
SD233N/R SERIES 235A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I2094 rev. B 10/06. case style B-8.
SD33N/R SERIES FAST RECOVERY DIODES Stud Version Features High power FAST recovery diode series.5 µs recovery time High voltage ratings up to 5V High current capability Optimized turn on and turn off characteristics
1200V 50A IGBT Module
12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching
Soft Recovery Diode Type M0433WC120 to M0433WC200
Date:- 6 Nov, 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0433WC120 to M0433WC200 Absolute Maximum Ratings OLTAGE RATINGS MAXIMUM LIMITS RRM Repetitive peak reverse voltage, (note 1) 1200-2000
Symbol Parameters Test Conditions Min Typ Max Unit T J max. Max. Junction Temperature 150 C T J op. Operating Temperature C T stg
V 15A Module RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching and short
IRG4BC30FD-SPbF. Fast CoPack IGBT. n-channel. Absolute Maximum Ratings Parameter Max. Units INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE Features Fast: optimized for medium operating frequencies (1-5 khz in hard switching, >20kHz in resonant mode). Generation 4 IGBT design provides
FEATURES SYMBOL QUICK REFERENCE DATA
FEATURES SYMBOL QUICK REFERENCE DATA Low forward volt drop Fast switching Soft recovery characteristic High thermal cycling performance Isolated mounting tab k a 1 2 V R = 1500 V V F 1.2 V / 1.25 V I F(peak)
HFB50HC20. Ultrafast, Soft Recovery Diode FRED. Features. Description. Absolute Maximum Ratings. 1 PD A V R = 200V I F(AV) = 50A
PD - 94308A FRED Ultrafast, Soft Recovery Diode Features Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic V R = 200V I F(AV) = 50A t rr = 35ns Description
IRG4BC10SD-SPbF IRG4BC10SD-LPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Extremely low voltage drop 1.1Vtyp. @ 2A S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives,
T1235T-8R. 12 A Snubberless Triac. Description. Features. Applications
12 A Snubberless Triac Datasheet - production data Features A2 G I²PAK 12 A medium current Triac Three triggering quadrants device Very high noise immunity and dynamic commutation ECOPACK 2 compliant component
IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL
PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)
TS420. Sensitive gate 4 A SCRs
Sensitive gate 4 A SCRs Datasheet - production data Features On-state RMS current: 4 A Repetitive peak off-state voltage (VDRM, VRRM) 600 V Triggering gate current, IGT 0.2 ma Description Thanks to highly
THYRISTORS 5P4M,5P6M DATA SHEET. 5 A (8 Ar.m.s.) THYRISTOR. PACKAGE DRAWING (Unit: mm) FEATURES APPLICATIONS <R>
DATA SHEET THYRISTORS 5P4M,5P6M 5 A (8 Ar.m.s.) THYRISTOR The 5P4M and 5P6M are a P gate all diffused mold type Thyristor granted 5 A On-state Average Current (TC = 103 C). PACKAGE DRAWING (Unit: mm) FEATURES
Soft Recovery Diode Type M0139S/R#120 to M0139S/R#180
Date:- 26 Sep, 2016 Data Sheet Issue:- 2 Soft Recovery Diode Type M0139S/R#120 to M0139S/R#180 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 1200-1800
CP15TD1-24A. DIP-CIB 3Ø Converter + 3Ø Inverter + Brake 15 Amperes/1200 Volts
Outline Drawing and Circuit Diagram Dimensions Inches Millimeters A 2.68±.1 68.±.3 B 1.73±.2 44.±.5 C.58±.4 14.7±.1 D 3.1±.2 79.±.5 E 2.83 72. F.16±.1 4.±.3 G 2.83±.1 72.±.3 H.7 2. J.2±.8 5.±.2 K.87 22.
HEXFET MOSFET TECHNOLOGY
PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary Part Number RDS(on) ID IRFN350 0.315 Ω 14A IRFN350 JANTX2N7227U JANTXV2N7227U REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY
WESTCODE. Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14)
An IXYS Company Date:- 14 Oct, 2004 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R0487YS10# to R0487YS14# (Old Type Number: R210SH10-14) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS
HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE
PD-97014C HiRel TM INT-A-Pak 2, PLASTIC HALF-BRIDGE IGBT MODULE G300HHCK12P2 Product Summary Part Number V CE I C V CE(SAT) G300HHCK12P2 1200V 300A 2.2 HiRel TM INT-A-Pak 2 The HiRel TM INT-A-Pak series
High Power Sonic FRD Type E3000EC45E
Date:- 11 April 2017 Data Sheet Issue: A1 Absolute Maximum Ratings OLTAGE RATINGS High Power Sonic RD Type MAXIMUM LIMITS RRM Repetitive peak reverse voltage, (note 1) 4500 RSM Non-repetitive peak reverse
STTH3006. Turbo 2 ultrafast high voltage rectifier
Turbo 2 ultrafast high voltage rectifier Datasheet - production data Features Ultrafast switching Low reverse current Low thermal resistance Reduces switching and conduction losses Insulated package: DOP3I
PINNING - TO220AB PIN CONFIGURATION SYMBOL
series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
STTH15RQ06-Y. Automotive turbo 2 ultrafast high voltage rectifier
Automotive turbo 2 ultrafast high voltage rectifier Datasheet - production data K K D²PAK K A A NC Description The STTH15RQ06-Y has been developed to be used in application requiring a high-voltage secondary
Anode-Shorted Gate Turn-Off Thyristor Type G1000L#250
Date:- 18 Feb, 2004 Data Sheet Issue:- 1 Anode-Shorted Gate Turn-Off Thyristor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1). 2500
Insulated Gate Bi-Polar Transistor Type T1600GB45G
Date:- 1 Nov, 214 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS V CES Collector emitter voltage 45 V V DC link Permanent DC voltage
Features. n-channel TO-247AC. 1
INSULTED GTE BIPOLR TRNSISTOR WITH ULTRFST SOFT RECOVERY DIODE Features Fast: Optimized for medium operating frequencies ( -5 khz in hard switching, >2 khz in resonant mode). Generation 4 IGBT design provides
10-PZ126PA080ME-M909F18Y. Maximum Ratings
flow3xphase-sic 12V/8mΩ Features SiC-Power MOSFET s and Schottky Diodes 3 phase inverter topology with split output Improved switching behavior (reduced turn on energy and X-conduction) Ultra Low Inductance
12N60 12N65 Power MOSFET
12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
Soft Recovery Diode Type M0336S/RA120 to M0336S/RA140
Date:- 21 Oct 2014 Data Sheet Issue:- 2 Soft Recovery Diode Type M0336S/RA120 to M0336S/RA140 Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS VRRM Repetitive peak reverse voltage, (note 1) 1600-1400
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
ST300S SERIES 300A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25158 rev. B 01/94. case style TO-209AE (TO-118)
ST300S SERIES PHASE CONTROL THYRISTORS Stud Version Features Center amplifying gate Hermetic metal case with ceramic insulator International standard case TO-209AE (TO-118) Threaded studs UNF 3/4-16UNF2A
Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21)
Date:- 4 Mar, 2003 Data Sheet Issue:- 3 Distributed Gate Thyristor Type R2619ZC18# to R2619ZC25# (Old Type Number: R600CH18-21) Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive
(250 Volts Peak) COUPLER SCHEMATIC. MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Rating Symbol Value Unit STYLE 6 PLASTIC
(0 Volts Peak) The Series consists of gallium arsenide infrared emitting diodes, optically coupled to silicon bilateral switch and are designed for applications requiring isolated triac triggering, low
ST280C..C SERIES 500A. Features. Typical Applications. Major Ratings and Characteristics. Bulletin I25159 rev. C 02/00. case style TO-200AB (A-PUK)
Bulletin I25159 rev. C 02/00 ST280C..C SERIES PHASE CONTROL THYRISTORS Hockey Puk Version Features Center amplifying gate Metal case with ceramic insulator International standard case TO-200AB (A-PUK)
WESTCODE. An IXYS Company. Date:- 24 May, Data Sheet Issue:- 2. Provisional Data Extra Fast Recovery Diode Type F1600NC120
WESTCODE An IXYS Company Absolute Maximum Ratings Provisional Data Extra ast Recovery Diode Type OLTAGE RATINGS Development Type No. x021nc120 Date:- 24 May, 2002 Data Sheet Issue:- 2 MAXIMUM LIMITS RRM
Product Information. Voltage ratings of high power semiconductors
Product Information oltage ratings of high power semiconductors oltage ratings of high power semiconductors Product Information Björn Backlund, Eric Carroll ABB Switzerland Ltd Semiconductors August 2006
STGB19NC60KDT4, STGF19NC60KD, STGP19NC60KD
STGB19NC60KDT4, STGF19NC60KD, 20 A, 600 V short-circuit rugged IGBT Datasheet - production data TAB 3 1 2 D PAK TAB 1 2 3 TO-220FP Features Low on voltage drop (VCE(sat)) Low CRES / CIES ratio (no cross-conduction
Order code V DS R DS(on) max I D
Datasheet N-channel 6 V,.23 Ω typ., 13 A, MDmesh M2 EP Power MOSFET in a TO-22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on) max I D STF2N6M2-EP 6 V.278 Ω 13 A Extremely low gate charge
PRELIMINARY Features Benefits SUPER Absolute Maximum Ratings Parameter Max. Units
PRELIMINARY INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins High abort circuit
Distributed Gate Thyristor Types R0633YC10x to R0633YC12x
Date:- 14 Jul, 2015 Data Sheet Issue:- 4 Distributed Gate Thyristor Types R0633YC10x to Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS V DRM Repetitive peak off-state voltage, (note 1) 1200