TK18. Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 TK18

Transcription

1 Phase Control Thyristor Advance Information Replaces January 2000 version, DS DS July 2001 FEATURES High Surge Capability APPLICATIONS High Power Drives High Voltage Power Supplies DC Motor Control Welding Battery Chargers KEY PARAMETERS I T(AV) I TSM dvdt* di/dt 1200V 115A 2000A 200V/µs 500A/µs *Higher dv/dt selections available VOLTAGE RATINGS Type Number 12 M or K 10 M or K Repetitive Peak Voltages V RRM V Lower voltage grades available. Conditions T vj = 0 to 125 C, I DRM = I RRM = 100mA,, V RRM t p = 10ms, V DSM & V RSM = & V RRM + 100V respectively ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, then:- Add K to type number for 1/2" 20 UNF thread, e.g. 12K. or Add M to type number for M12 thread, e.g. 12M. Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. Outline type code: TO94. See Package Details for further information. Fig. 1 Package outline 1/8

2 CURRENT RATINGS T case = 60 C unless stated otherwise. Symbol Parameter Conditions Max. Units I T(AV) Mean on-state current Half wave resistive load 152 A I T(RMS) RMS value A I T Continuous (direct) on-state current A T case = 80 C unless stated otherwise. Symbol Parameter Conditions Max. Units I T(AV) Mean on-state current Half wave resistive load 115 A I T(RMS) RMS value A I T Continuous (direct) on-state current A SURGE RATINGS Symbol Parameter Conditions Max. Units I TSM Surge (non-repetitive) on-state current 10ms half sine; T case 1.6 ka I 2 t I 2 t for fusing V R = 50% V RRM - 1/4 sine 12.8 x 10 3 A 2 s I TSM Surge (non-repetitive) on-state current 10ms half sine; T case 2.0 ka I 2 t I 2 t for fusing V R = x 10 3 A 2 s THERMAL AND MECHANICAL DATA Symbol Parameter Conditions Min. Max. Units R th(j-c) Thermal resistance - junction to case dc o C/W R th(c-h) Thermal resistance - case to heatsink Mounting torque 15.0Nm with mounting compound o C/W T vj Virtual junction temperature On-state (conducting) Reverse (blocking) o C o C T stg Storage temperature range o C - Mounting torque Nm 2/8

3 DYNAMIC CHARACTERISTICS Symbol Parameter Conditions Min. Max. Units V TM Maximum on-state voltage At 300A peak, T case = 25 o C V I RRM /I DRM Peak reverse and off-state current At V RRM /, T case dv/dt Maximum linear rate of rise of off-state voltage To 60% T j, Gate open circuit - 10 ma V/µs di/dt Rate of rise of on-state current Gate source 20V, 20Ω t r 0.5µs, T j = 125 C Repetitive 50Hz A/µs Non-repetitive A/µs V T(TO) Threshold voltage At T vj r T On-state slope resistance At T vj V mω t gd Delay time V D = 300V, I G = 1A, I T = 50A, di/dt = 50A/µs, di G /dt = 1A/µs, T j = 25 o C µs I L Latching current T j = 25 o C, V D = 12V I H Holding current T j = 25 o C, V D = 12V, I TM = 1A - - ma - 50 ma GATE TRIGGER CHARACTERISTICS AND RATINGS Symbol Parameter Conditions Typ. Max. Units V GT Gate trigger voltage = 12V, T case = 25 o C, R L = 6Ω V I GT Gate trigger current = 12V, T case = 25 o C, R L = 6Ω ma V GD Gate non-trigger voltage At T case, R L = 12Ω V FGM Peak forward gate voltage Anode positive with respect to cathode V FGN Peak forward gate voltage Anode negative with respect to cathode V V V V RGM Peak reverse gate voltage - 5 V I FGM Peak forward gate current Anode positive with respect to cathode P GM Peak gate power A - 16 W P G(AV) Mean gate power - 3 W 3/8

4 CURVES SINUSOIDAL CURRENT WAVEFORM 2000 Measured under pulse conditions T j = 125 C Instantaneous on-state current, I T - (A) RECTANGULAR CURRENT WAVEFORM Instantaneous on-state voltage, V T - (V) Fig.2 Maximum (limit) on-state characteristics Fig.3 Maximum on-state power dissipation for sinusoidal current waveform Fig.4 Maximum allowable case temperature for sinusoidal current waveform 4/8

5 Fig.5 Maximum on-state power dissipation for rectangular current waveform Fig.6 Maximum allowable case temperature for rectangular current waveform Fig.7 Gate trigger characteristics Fig.8 Transient thermal impedance - junction to case 5/8

6 Fig.9 Multiplying factor for non-repetive sub-cycle surge onstate current and I 2 t rating Fig.10 Multiplying factor for non-repetive surge on-state current 6/8

7 PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Ø4 Ø8.4 ± max 8 min 160 ± max 210 ± 10 Hex. 27AF 8 min M = M12 K = 1/2" 20 UNF K = 20.6 ± 0.6 M = 18.0 ± 0.5 Nominal weight: 120g Mounting torque: 15Nm ±10% Gate lead colour: White Cathode lead colour: Red Package outline type code: TO94 7/8

8 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. Stresses above those listed in this data sheet may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: +44-(0) Fax: +44-(0) CUSTOMER SERVICE Tel: +44 (0) / Fax: +44 (0) Dynex Semiconductor 2003 TECHNICAL DOCUMENTATION NOT FOR RESALE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.