Replaces March 2002, version DS DS July 2002
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- Clifford Henry
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1 DIM24ESM17 DIM24ESM17 Single Switch IGBT Module Replaces March 22, version DS DS July 22 FETURES 1µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with ln Substrates KEY PRMETERS CES 17 CE(sat) * (typ) 2.7 I C (max) 24 I C(PK) (max) 48 *(measured at the power busbars and not the auxiliary terminals) PPLICTIONS High Reliability Inverters Motor Controllers ux C C1 External connection C2 C3 Traction Drives The Powerline range of high power modules includes half bridge, chopper, dual, single and bidirectional switch configuratio covering voltages from 6 to 33 and currents up to 24. The DIM24ESM17 is a single switch 17, n channel enhancement mode, iulated gate bipolar traistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSO) plus full 1µs short circuit withstand. This module is optimised for traction drives and other applicatio requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance cotruction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety. ORDERING INFORMTION Order s: DIM24ESM17 Note: When ordering, please use the whole part number. G ux E E1 E2 E3 External connection Fig. 1 Single switch circuit diagram Outline type code: E (See package details for further information) Fig. 2 Electrical connectio (not to scale) Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 1/1
2 DIM24ESM17 BSOLUTE MXIMUM RTINGS Stresses above those listed under 'bsolute Maximum Ratings' may cause permanent damage to the device. In extreme conditio, as with all semiconductors, this may include potentially hazardous rupture of the package. ppropriate safety precautio should always be followed. Exposure to bsolute Maximum Ratings may affect device reliability. = 25 C unless stated otherwise Symbol Parameter Test Conditio Max. Units CES Collectoremitter voltage = 17 S Gateemitter voltage ±2 I C Continuous collector current = 75 C 24 I C(PK) Peak collector current 1ms, = 11 C 48 P max Max. traistor power dissipation = 25 C, T j = 15 C 28 W I 2 t Diode I 2 t value (IGBT arm) R =, t p = 1ms, T vj = 125 C 18 k 2 s isol Isolation voltage per module Commoned terminals to base plate. C RMS, 1 min, 5Hz 4 Q PD Partial discharge per module IEC = 18, 2 = 13, 5Hz RMS 1 PC 2/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
3 DIM24ESM17 THERML ND MECHNICL RTINGS Internal iulation material: ln Baseplate material: lsic Creepage distance: 32mm Clearance: 2mm CTI (Critical Tracking Index): 175 Symbol Parameter Test Conditio Min. Typ. Max. Units R th(jc) Thermal resistance traistor Continuous dissipation 6 C/kW junction to case R th(jc) Thermal resistance diode Continuous dissipation 13.3 C/kW junction to case R th(ch) Thermal resistance case to heatsink Mounting torque 5Nm 6 C/kW (per module) (with mounting grease) T j Junction temperature Traistor 15 C Diode 125 C T stg Storage temperature range C Screw torque Mounting M6 5 Nm Electrical connectio M4 2 Nm Electrical connectio M8 1 Nm Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 3/1
4 DIM24ESM17 ELECTRICL CHRCTERISTICS = 25 C unless stated otherwise. Symbol Parameter Test Conditio Min. Typ. Max. Units I CES Collector cutoff current =, CE = CES 3 m =, CE = CES, = 125 C 75 m I GES Gate leakage current = ±2, CE = 12 µ (TH) Gate threshold voltage I C =12m, = CE CE(sat) Collectoremitter saturation voltage = 15, I C = = 15, I C = 24,, = 125 C I F Diode forward current DC 24 I FM Diode maximum forward current t p = 1ms 48 F Diode forward voltage I F = I F = 24, = 125 C C ies Input capacitance CE = 25, =, f = 1MHz 18 nf L M Module inductance 1 nh R INT Internal traistor resistance.27 mω SC Data Short circuit. I SC T j = 125 C, CC = 1, I 1 11 t p 1µs, CE(max) = CES L*. di/dt I 2 96 IEC Note: Measured at the power busbars and not the auxiliary terminals) * L is the circuit inductance + L M 4/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
5 DIM24ESM17 ELECTRICL CHRCTERISTICS = 25 C unless stated otherwise Symbol Parameter Test Conditio Min. Typ. Max. Units t d(off) Turnoff delay time I C = 24 2 t f Fall time = ±15 2 E OFF Turnoff energy loss CE = 9 9 t d(on) Turnon delay time R G(ON) = R G(OFF) = 1.Ω 8 t r Rise time L ~ 5nH 3 E O Turnon energy loss 475 Q g Gate charge 27 µc Q rr Diode reverse recovery charge I F = 24, R = 5% CES, 45 µc I rr Diode reverse current di F /dt = 85/µs 12 E REC Diode reverse recovery energy 3 = 125 C unless stated otherwise Symbol Parameter Test Conditio Min. Typ. Max. Units t d(off) Turnoff delay time I C = t f Fall time = ±15 25 E OFF Turnoff energy loss CE = 9 12 t d(on) Turnon delay time R G(ON) = R G(OFF) = 1.Ω 9 t r Rise time L ~ 5nH 3 E ON Turnon energy loss 75 Q rr Diode reverse recovery charge I F = 24, R = 5% CES, 75 µc I rr Diode reverse current di F /dt = 8/µs 14 E REC Diode reverse recovery energy 6 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 5/1
6 DIM24ESM17 TYPICL CHRCTERISTICS Common emitter = 25 C ce is measured at power busbars and not the auxiliary terminals Common emitter = 125 C ce is measured at power busbars and not the auxiliary terminals Collector current, I c () Collector current, I c () = Collectoremitter voltage, ce () 12 = Collectoremitter voltage, ce () Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics = 125 C CC = 9, R g = 1Ω L ~ 5nH E off 3 25 = 125 C I C = 24 R g = 1Ω L ~ 5nH E on Switching energy () E on E rec Switching energy () E off 2 5 E rec Collector current, I C () Gate resistance, R g (Ohms) Fig. 5 Typical switching energy vs collector current Fig. 6 Typical switching energy vs gate resistance 6/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
7 DIM24ESM17 Foward current, I F () T j = 25 C T j = 125 C F is measured at power busbars and not the auxiliary terminals Collector current, I C () Foward voltage, F () 5 = 125 C Module I C ge = 15 Chip I C Collector emitter voltage, ce () Fig. 7 Diode typical forward characteristics Fig. 8 Reverse bias safe operating area 25 =125 C 1 Reverse recovery current, I rr () Reverse voltage, R () Fig. 9 Diode reverse bias safe operating area Traient thermal impedance, Z th (jc) ( C/kW ) IGBT R i ( C/KW) τ i (ms) Diode R i ( C/KW) τ i (ms) Pulse width, t p (s) Fig. 1 Traient thermal impedance Diode Traistor Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 7/1
8 DIM24ESM DC collector current, I C () Case temperature, ( C) Fig. 11 DC current rating vs case temperature 8/1 Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures.
9 DIM24ESM17 PCKGE DETILS For further package information, please visit our website or contact Customer Services. ll dimeio in mm, unless stated otherwise. DO NOT SCLE. Nominal weight: 17g Module outline type code: E Caution: This device is seitive to electrostatic discharge. Users should follow ESD handling procedures. 9/1
10 POWER SSEMBLY CPBILITY The Power ssembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an exteive range of air and liquid cooled assemblies covering the full range of circuit desig in general use today. The ssembly group offers high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CD methods our team of design and applicatio engineers aim to provide the Power ssembly Complete Solution (PCs). HETSINKS The Power ssembly group has its own proprietary range of extruded aluminium heatsinks which have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or Customer Services. power_solutio@dynexsemi.com HEDQURTERS OPERTIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolhire. LN6 3LF. United Kingdom. Tel: +44() Fax: +44() CUSTOMER SERICE Tel: +44 () / Fax: +44 () Dynex Semiconductor 23 TECHNICL DOCUMENTTION NOT FOR RESLE. PRODUCED IN UNITED KINGDOM This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not cotitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's respoibility to fully determine the performance and suitability of any equipment using such information and to eure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. ll products and materials are sold and services provided subject to the Company's conditio of sale, which are available on request. ll brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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