IT (AV) A VDRM...400V/600V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=47 C A ITSM
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1 OUTLINE DRWING φ. MX. Dimensions in mm CTHODE NODE GTE OLTGE CLSS TYPE NME. MX. MIN CIRCUMSCRIBE CIRCLE φ MX IT ().... DRM.../ IGT...µ JEDEC : TO-9 PPLICTION Leakage protector, timer, gas ignitor MXIMUM RTINGS 8 oltage class RRM RSM Repetitive peak reverse voltage Non-repetitive peak reverse voltage 8 R () DRM DSM D () reverse voltage Repetitive peak off-state voltage Non-repetitive peak off-state voltage off-state voltage IT (RMS) RMS on-state current Conditions Ratings. IT () verage on-state current Commercial frequency, sine half wave, 8 conduction, Ta= C. ITSM Surge on-state current Hz sine half wave full cycle, peak value, non-repetitive I t I t for fusing alue corresponding to cycle of half wave Hz, surge on-state current. s PGM Peak gate power dissipation W PG () FGM verage gate power dissipation Peak gate forward voltage. W RGM IFGM Peak gate reverse voltage Peak gate forward current. Tj Junction temperature ~ + C Tstg Storage temperature Weight Typical value ~ +. C g. With gate to cathode resistance RGK=kΩ. Sep.
2 ELECTRICL CHRCTERISTICS Test conditions Min. Limits Typ. Max. IRRM IDRM TM GT GD IGT IH Rth (j-a) Repetitive peak reverse current Repetitive peak off-state current On-state voltage Gate trigger voltage Gate non-trigger voltage Gate trigger current Holding current Thermal resistance Tj= C, RRM applied Tj= C, DRM applied, RGK=kΩ Ta= C, ITM=, instantaneous value Tj= C, D=, IT=. Tj= C, D=/DRM, RGK=kΩ Tj= C, D=, IT=. Tj= C, D=, RGK=kΩ Junction to ambient m m µ m C/W. If special values of IGT are required, choose at least two items from those listed in the table below. (Example: B, BC) Item B C IGT (µ) ~ ~ ~ The above values do not include the current flowing through the kω resistance between the gate and cathode.. IGT, GT measurement circuit. IGS IGT RGK kω GT SWITCH TUT Ω SWITCH : IGT measurement SWITCH : GT measurement (Inner resistance of voltage meter is about kω) PERFORMNCE CURES ON-STTE CURRENT () MXIMUM ON-STTE CHRCTERISTICS Ta = C SURGE ON-STTE CURRENT () RTED SURGE ON-STTE CURRENT 8 8 ON-STTE OLTGE () CONDUCTION TIME (CYCLES T Hz) Sep.
3 GTE OLTGE () GTE CHRCTERISTICS PGM = W FGM = PG() =.W GT =.8 (Tj = C) IGT = µ (Tj = C) GD =. IFGM =. (%) GTE TRIGGER CURRENT (Tj=t C) GTE TRIGGER CURRENT (Tj= C) GTE TRIGGER CURRENT S. JUNCTION TEMPERTURE TYPICL EXMPLE 8 GTE CURRENT (m) JUNCTION TEMPERTURE ( C) GTE TRIGGER OLTGE () GTE TRIGGER OLTGE S. JUNCTION TEMPERTURE.8 DISTRIBUTION. TYPICL EXMPLE. IGT ( C) = µ. 8 TRNSIENT THERML IMPEDNCE ( C/W) 8 8 MXIMUM TRNSIENT THERML IMPEDNCE CHRCTERISTICS (JUNCTION TO MBIENT) JUNCTION TEMPERTURE ( C) TIME (s) ERGE POWER DISSIPTION (W) MXIMUM ERGE POWER DISSIPTION (SINGLE-PHSE HLF WE) =. RESISTIE, INDUCTIE LODS.... MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. ERGE ON-STTE CURRENT (SINGLE-PHSE HLF WE) 8 = RESISTIE, INDUCTIE LODS NTURL CONECTION ERGE ON-STTE CURRENT () ERGE ON-STTE CURRENT () Sep.
4 ERGE POWER DISSIPTION (W) MXIMUM ERGE POWER DISSIPTION (SINGLE-PHSE FULL WE) 9 = RESISTIE LODS.... MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. ERGE ON-STTE CURRENT (SINGLE-PHSE FULL WE) 8 = RESISTIE LODS NTURL CONECTION ERGE ON-STTE CURRENT () ERGE ON-STTE CURRENT () ERGE POWER DISSIPTION (W) MXIMUM ERGE POWER DISSIPTION (RECTNGULR WE) 8. 9 =... RESISTIE, INDUCTIE LODS.... MBIENT TEMPERTURE ( C) LLOWBLE MBIENT TEMPERTURE S. ERGE ON-STTE CURRENT (RECTNGULR WE) 8 NTURL CONECTION = RESISTIE, INDUCTIE 9 LODS ERGE ON-STTE CURRENT () ERGE ON-STTE CURRENT () (%) BREKOER OLTGE S. JUNCTION TEMPERTURE TYPICL EXMPLE RGK = kω (%) BREKOER OLTGE S. GTE TO CTHODE RESISTNCE TYPICL EXMPLE Tj = C BREKOER OLTGE (Tj = t C) BREKOER OLTGE (T j = C) 8 8 BREKOER OLTGE (RGK = rkω) BREKOER OLTGE (RGK = kω) 8 JUNCTION TEMPERTURE ( C) GTE TO CTHODE RESISTNCE (kω) Sep.
5 (%) BREKOER OLTGE (dv/dt = v/µs) BREKOER OLTGE (dv/dt = /µs) BREKOER OLTGE S. RTE OF RISE OF OFF-STTE OLTGE RGK = kω 8 Tj = C 8 Tj = C HOLDING CURRENT (m) HOLDING CURRENT S. JUNCTION TEMPERTURE RGK = kω DISTRIBUTION TYPICL EXMPLE IGT ( C) = µ 8 RTE OF RISE OF OFF-STTE OLTGE (/µs) JUNCTION TEMPERTURE ( C) HOLDING CURRENT (m) HOLDING CURRENT S. REPETITIE PEK REERSE OLTGE S. GTE TO CTHODE RESISTNCE JUNCTION TEMPERTURE TYPICL EXMPLE TYPICL EXMPLE IGT ( C) IH (kω) # µ.m # µ.m # # D =, Tj = C GTE TO CTHODE RESISTNCE (kω) (%) REPETITIE PEK REERSE OLTGE (Tj=t C) REPETITIE PEK REERSE OLTGE (Tj= C) 8 8 JUNCTION TEMPERTURE ( C) GTE TRIGGER CURRENT (µ) GTE TRIGGER CURRENT S. GTE CURRENT PULSE WIDTH # # TYPICL EXMPLE IGT () # µ # µ Tj = C GTE TRIGGER PULSE WIDTH (µs) Sep.
IT (AV) A VDRM V JEDEC : TO-92. Conditions A IT (AV) Commercial frequency, sine half wave, 180 conduction, Ta=30 C A ITSM
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Thyristor High Voltage, Phase Control SCR, 25 2 () PRODUCT SUMMRY Package TO-220B Diode variation Single SCR I T(V) 6 V DRM /V RRM 800 V, 200 V V TM.25 V I GT 45 m T J - 40 C to 25 C FETURES Designed and
More informationFeatures. Symbol Parameter Value Unit TO-92 SOT-223. t p TO-92 SOT-223. Peak gate current t p. = 10 μs T J
Sx02xS Series RoHS Description New mp sensitive gate SCR series offers high static dv/dt with low turn off time (tq) through small die planar construction design. ll SCR s junctions are glasspassivated
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MCR25DG, MCR25MG, MCR25NG Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls, and power supplies; or wherever half wave, silicon gate controlled
More informationMCR8DCM, MCR8DCN. Thyristors. Surface Mount 600V - 800V > MCR8DCM, MCR8DCN G K. Description
MCR8DCM, MCR8DCN Pb Description Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light and speed control. Features Small Size
More informationFM600TU-2A HIGH POWER SWITCHING USE INSULATED PACKAGE
FM6TU- INSULTED PCKGE FM6TU- ID(rms)... DSS... Insulated Type 6-elements in a pack Thermistor inside UL Recognized File No.E8 PPLICTION C motor control of forklift (battery power source), UPS OUTLINE DRING
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STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41 series is suitable for general
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BTA16-xxxSW BTB16-xxxSW HIGH PERFORMANCE LOGIC LEVEL TRIACS FEATURES IT(RMS) = 16A LOGIC LEVEL TRIGGERING: IGT ma HIGH SURGE CAPABILITY DESCRIPTION The BTA/BTB16-xxxSW triacs are using a high performance
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LITE-ON SEMICONDUCTOR Sensitive Gate Sillicon Controlled Rectifiers Reverse Blocking Thyristors SCRs 1.5 AMPERES RMS 6 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and Other Logic
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BTA4 and BTA/BTB41 Series STANDARD 4A TRIACS MAIN FEATURES: Symbol Value Unit I T(RMS) 4 A G V DRM /V RRM 6 and 8 V A1 A1 I GT (Q1 ) 5 ma G DESCRIPTION Available in high power packages, the BTA/ BTB4-41
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VS-16TTS08S-M3, VS-16TTS12S-M3 Series Thyristor High Voltage, Surface Mount Phase Control SCR, 16 1 2 3 D 2 PK (TO-263) PRIMRY CHRCTERISTICS 2, 4 node 1 Cathode 3 Gate I T(V) V DRM /V RRM 800 V, 1200 V
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MCR8B, MCR8M Pb Description PNPN devices designed for line powered consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection
More informationBTA30H-600CW3G, BTA30H-800CW3G
BTA30H-600CW3G, BTA30H-800CW3G Pb Description Designed for high performance full-wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage
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Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
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BTA6-600BW3G, BTA6-800BW3G, Pb Description Designed for high performance full wave ac control applications where high noise immunity and high commutating di/dt are required. Features Blocking oltage to
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20 A Snubberless Triacs Datasheet production data Features I T(RMS) = 20 A V DRM, V RRM = 600 and 700 V I GT (Q1) (max) = 35 and 50 ma Description G A2 A1 The Triacs use high performance glass passivated
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More informationPINNING - SOT82 PIN CONFIGURATION SYMBOL
GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT thyristors in a plastic envelope, intended for use in general purpose BT8- R 5R 6R switching
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BTA08-800CW3G Pb Description Designed primarily for half-wave ac control applications, such as motor controls, heating controls and power supply crowbar circuits. Features Blocking oltage to 800 On-State
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series GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high - 4R 6R 8R bidirectional
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