BUV98V NPN TRANSISTOR POWER MODULE

Transcription

1 NPN TRANSISTOR POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE VERY LOW R th JUNCTION CASE SPECIFIED ACCIDENTAL OVERLOAD AREAS ISOLATED CASE (2500V RMS) EASY TO MOUNT LOW INTERNAL PARASITIC INDUCTANCE 4 3 INDUSTRIAL APPLICATIONS: MOTOR CONTROL SMPS & UPS WELDING EQUIPMENT 1 2 Pin 4 not connected ISOTOP INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CEV Collector-Emitter Voltage (V BE = -5 V) 850 V VCEO(sus) Collector-Emitter Voltage (IB = 0) 450 V VEBO Emitter-Base Voltage (IC =0) 7 V I C Collector Current 30 A ICM Collector Peak Current (tp =10ms) 60 A IB Base Current 8 A I BM Base Peak Current (t p =10ms) 30 A P tot Total Dissipation at T c =25 o C 150 W Tstg Storage Temperature -55 to 150 Tj Max. Operating Junction Temperature 150 V ISO Insulation Withstand Voltage (AC-RMS) 2500 V o C o C January /7

2 THERMAL DATA R thj-case R thc-h Thermal Resistance Case-heatsink With Conductive Thermal Resistance Junction-case Max Grease Applied Max o C/W o C/W ELECTRICAL CHARACTERISTICS (T case =25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICER Collector Cut-off VCE =VCEV Current (RBE =5Ω) VCE =VCEV Tj = 100 o C ICEV Collector Cut-off VCE =VCEV Current (VBE =-5V) VCE =VCEV Tj = 100 o C I EBO Emitter Cut-off Current (IC =0) VCEO(SUS)* Collector-Emitter IC =0.2A L=25mH Sustaining Voltage Vclamp =450V h FE DC Current Gain I C =24A V CE =5V 9 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage dic/dt Rate of Rise of On-state Collector VCE(3 µs) Collector-Emitter Dynamic Voltage VCE(5 µs) Collector-Emitter Dynamic Voltage ts Storage Time Fall Time tf V CEW Maximum Collector Emitter Voltage Without Snubber Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % V EB =5V 2 IC =20A IB=4A I C =30A I B =8A 450 V IC =20A IB=4A 1.6 V VCC = 300 V RC =0 tp=3µs IB1 =6A Tj=100 o C VCC = 300 V RC =15Ω I B1 =6A T j = 100 o C VCC = 300 V RC =15Ω I B1 =6A T j = 100 o C IC =20A VCC =50V VBB =-5V LB=1.5µH V clamp =300V I B1 =4A L = 750 µh T j =100 o C I CWoff =30A I B1 =6A VBB =-5V VCC =50V L = 750 µh LB =15µH Tj=125 o C V V 100 A/µs 8 V 4 V µs µs 350 V 2/7

3 Safe Operating Areas Thermal Impedance Derating Curve Collector-Emitter Voltage Versus Base-Emitter Resistance Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage 3/7

4 ReverseBiasedSOA ForwardBiasedSOA ReverseBiasedAOA ForwardBiasedAOA Switching Times Inductive Load Switching Times Inductive Load Versus Temperature 4/7

5 DC Current Gain Turn-on Switching Test Circuit (1) Fast electronic switch (2) Non-inductive load Turn-on Switching Waveforms Turn-off Switching Test Circuit Turn-off Switching Waveforms (1) Fast electronic switch (2) Non-inductive load (3) Fast recovery rectifier 5/7

6 ISOTOP MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A B C D E F G H J K L M N O P G A O B N H D E F J K L C M /7

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