POW-R-BLOK TM Dual SCR/Diode Isolated Module 150 Amperes / Up to 1800 Volts CD62 15B, CD67 15B

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1 5 mperes / Up to Volts B G "J" () OUTLINE DRWING D E F F M "K" () R S Description: Powerex SCR/Diode Modules are designed for use in applications requiring phase control and isolated packaging. The modules are isolated for easy mounting with other components on a common heatsink. has been tested and recognized by the Underwriters Laboratories. C H ~ CD6 CD67 ~ + + CONNECTION DIGRMS - - N P Q CD6 5B, Dual SCR/Diode Isolated Module 5 mperes / Up to Volts Features: Electrically Isolated Heatsinking DBC lumina (l O ) Insulator Glass Passivated Chips Metal Baseplate Low Thermal Impedance for Improved Current Capability Quick Connect Gate Terminal with Provision for Keyed Mating Plug UL Recognition Pending CD6 5B, Outline Dimensions Dimension Inches Millimeters.7 94 B.8 5 C.8 D.5 8 E.67 7 F.9 G H.5 9 J M6 M6 K M. 5 N.8 7 P. 8 Ordering Information: Select the complete nine digit module part number from the table below. Example: CD665B is a 6Volt, 5 mpere SCR/Diode Isolated Module Type CD6 CD67 Voltage Volts (x) Current mperes (x ) Version 5 B Benefits: No dditional Insulation Components Required Easy Installation No Clamping Components Required Reduce Engineering Time pplications: Bridge Circuits C & DC Motor Drives Battery Supplies Power Supplies Large IGBT Circuit Front Ends Lighting Control Heat & Temperature Control Welders Q.4 9 R..8 S..8 Note: Dimensions are for reference only.

2 5 mperes / Up to Volts bsolute Maximum Ratings Characteristics Conditions Symbol Units Repetitive Peak Forward and Reverse Blocking Voltage V DRM & V RRM up to V Non-Repetitive Peak Reverse Blocking Voltage (t < 5 msec) RMS Forward Current verage Forward Current Peak One Cycle Surge Current, Non-Repetitive Peak Three Cycle Surge Current, Non-Repetitive Peak Ten Cycle Surge Current, Non-Repetitive for Fusing for One Cycle Conduction, T C =85 C Conduction, T C =85 C (C Switch) Conduction, T C =85 C Conduction, T C =C 6 Hz, % V RRM reapplied, T j =5 C 6 Hz, No V RRM reapplied, T j =5 C 5 Hz, % V RRM reapplied, T j =5 C 5 Hz, No V RRM reapplied, T j =5 C 6 Hz, % V RRM reapplied, T j =5 C 5 Hz, % V RRM reapplied, T j =5 C 6 Hz, % V RRM reapplied, T j =5 C 5 Hz, % V RRM reapplied, T j =5 C 8. ms, % V RRM reapplied, T j =5 C 8. ms, No V RRM reapplied, T j =5 C ms, % V RRM reapplied, T j =5 C ms, No V RRM reapplied, T j =5 C V RSM V RRM + V I T(RMS) I T(RMS) I T(V) I T(V) , 8, 84, 9, Maximum Rate-of-Rise of On-State Current, T j =5 C, di/dt /µs Non Repetitive V D =. V DRM (Rated), I TM =, I G =.5, T r <.5µs, t p > 6µs Peak Gate Power Dissipation T p < 5 ms, T j = 5 C P GM W verage Gate Power Dissipation F = 5 Hz, T j = 5 C P G(V) W Peak Forward Gate Current T p < 5 ms, T j = 5 C I GFM Peak Reverse Gate Voltage T p < 5 ms, T j = 5 C V GRM V Operating Temperature T J -4 to +5 C Storage Temperature T stg -4 to +5 C sec sec sec sec Max. Mounting Torque, M6 Mounting Screw on Terminals in.-lb. Nm Max. Mounting Torque, Module to Heatsink in.-lb. Nm Module Weight, Typical 65 G 5.8 Oz. V 5C V rms V

3 5 mperes / Up to Volts Electrical Characteristics, T J =5 C unless otherwise specified Characteristics Symbol Test Conditions Min. Max. Units Repetitive Peak Forward Leakage Current I DRM Up to 6V, T J =5 C 5 m Repetitive Peak Reverse Leakage Current I RRM Up to 6V, T J =5 C 5 m Peak On-State Voltage V TM / V FM I TM / I FM =.6 V Threshold Voltage, Low-level Slope Resistance, Low-level V (TO) r T T J = 5 C, I = 6.7% x πi T(V) to πi T(V).85.5 Minimum dv/dt dv/dt Exponential to / V DRM T j =5 C, Gate Open V mω V/µs Turn-Off Time (Typical) t off T J = 5 C, I T =, R gk = Ω 5 - (Typical) µs V r = 5V, -di/dt=5 /µs Re-pplied dv/dt = V/µs, Linear to / V DRM Gate Trigger Current I GT T j = 5 C, V D =6V, R a =Ω Resistive Load 5 m Gate Trigger Voltage V GT T j = 5 C, V D =6V, R a =Ω, Resistive Load. Volts Non-Triggering Gate Voltage V GDM T j =5 C, V D =V DRM.5 Volts Non-Triggering Gate Current I GDM T j =5 C, V D =V DRM m Holding Current I H T J =5 C 5 (Typical) m Latching Current I L T J =5 C (Typical) m Thermal Characteristics Characteristics Symbol Max. Units Thermal Resistance, Junction to Case DC Operation R ΘJ-C Per Module, both conducting Per Junction, both conducting Thermal Resistance, Case to Sink Lubricated R ΘC-S Per Module.5 C/W.85.7 C/W C/W 5 Maximum On-State Forward Voltage Drop ( Tj = 5 C ).8.6 Maximum Transient Thermal Impedance (Junction to Case) On-State Voltage - Vtm / Vfm - Volts 4 Instantaneous On-State Current - Itm / Ifm - mperes Thermal Impedance - Rjc - C/W Time - t - Seconds

4 5 mperes / Up to Volts Max. Power Dissipation Per Junction - Watts_ Maximum On-State Power Dissipation (Sinusoidal Waveform) CONDUCTION NGLE Max. Case Temperature - Tcase - C_ Maximum llowable Case Temperature (Sinusoidal Waveform) CONDUCTION NGLE verage On-State Current - It(av) / If(av) - mperes verage On-State Current - It(av) / If(av) - mperes Maximum On-State Power Dissipation (Rectangular Waveform) Maximum llowable Case Temperature (Rectangular Waveform) Max. Power Dissipation Per Junction - Watts_ CONDUCTION NGLE verage On-State Current - It(av) / If(av) - mperes Max. Case Temperature - Tcase - C_ CONDUCTION NGLE verage On-State Current - It(av) / If(av) - mperes.5. Powerex CD6 & CD67--5 Pow-R-Blok 6-Pulse Bridge. Rth S- (C/W) Total Power Dissipation vs Maximum Rated Output Current.4.5 Total Power Dissipation (W) Total Power Dissipation (W)

5 5 mperes / Up to Volts Six-Pulse Bridge Circuit Total Power Dissipation & Maximum Rated Output Current With Sink to mbient Resistance of Heatsink as a Parameter.