MAC8DG, MAC8MG, MAC8NG
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- Bryan Kennedy
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1 MAC8DG, MAC8MG, MAC8NG Pb Description Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half wave silicon gate controlled, solid state devices are needed. Features Blocking oltage to 800 olts On State Current Rating of 8.0 Amperes RMS at 0 C Uniform Gate Trigger Currents in Three Quadrants High Immunity to dv/dt 250 /µs minimum at 25 C Minimizes Snubber Networks for Protection Industry Standard TO 220 Package Pin Out High Commutating di/dt 6.5 A/ms minimum at 25 C These Devices are Pb Free and are RoHS Compliant Functional Diagram 2 CASE 22A STYLE MT2 Additional Information G MT Datasheet Resources Samples
2 Maximum Ratings (T J = 25 C unless otherwise noted) Rating Symbol alue Unit Peak Repetitive Off-State oltage (Note ) (Gate Open, Sine Wave 50 to 60 Hz, T J = 25 to 0 C) MAC8DG MAC8MG DRM, RRM MAC8NG 800 On-State RMS Current (Full Cycle Sine Wave, 60 Hz, T C = 0 C) I T (RMS) 8.0 A Peak Non-Repetitive Surge Current (One Full Cycle Sine Wave, 60 Hz, T J = 25 C) I TSM 80 A Circuit Fusing Consideration (t = 8.3 ms) I 2 t 26 A²sec Peak Gate Power (Pulse Width.0 µs, T C = 80 C) P GM 6 W Average Gate Power (t = 8.3 ms, T C = 80 C) P G (A) 0.35 W Operating Junction Temperature Range T J -0 to +25 C Storage Temperature Range T stg -0 to +50 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.. DRM and RRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. Thermal Characteristics Rating Symbol alue Unit Thermal Resistance, Junction to Case (AC) Junction to Ambient R 8JC R 8JA C/W Maximum Lead Temperature for Soldering Purposes, /8 from case for seconds T L 260 C
3 Electrical Characteristics - OFF (T J = 25 C unless otherwise noted ; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak Repetitive Blocking Current ( D = DRM = RRM ; Gate Open) T J = 25 C I DRM, I RRM T J = 25 C ma Electrical Characteristics - ON (T J = 25 C unless otherwise noted; Electricals apply in both directions) Characteristic Symbol Min Typ Max Unit Peak On State oltage (Note ) (I TM = ±6.0 A) TM.3.6 Gate Trigger Current (Continuous dc) ( D = 2, R L = 0 Ω) MT2(+), G( ) I GT MT2( ), G( ) ma Holding Current ( D = 2, Gate Open, Initiating Current = ±50 ma)) I H.5.5 ma Gate Non Trigger oltage (Continuous dc) ( D = 2, R L = 0 Ω, T J = C) GD 20 0 _ Latching Current ( D = 2, I G = 35 ma) I L MT2(+), G( ) _ MT2( ), G( ) _ ma Gate Trigger oltage ( D = 2, R L = 0 Ω) GT MT2(+), G( ) MT2( ), G( ) Gate Non Trigger oltage (T J = 25 C) ( D = 2, R L = 0 Ω) 0.2 GD MT2(+), G( ) 0.2 MT2( ), G( ) Indicates Pulse Test: Pulse Width 2.0 ms, Duty Cycle 2%. Dynamic Characteristics Characteristic Symbol Min Typ Max Unit Rate of Change of Commutating Current See Figure. ( D = 00, I TM =. A, Commutating dv/dt = 8 /µs,gate Open, TJ = 25 C, f = 250 Hz, No Snubber) C L = µf L L = 0 mh d/dt 6.5 A/ms Critical Rate of Rise of Off-State oltage ( D = Rated DRM, Exponential Waveform, Gate Open, T J = 25 C) d/dt 250 /µs
4 oltage Current Characteristic of SCR Symbol Parameter +C urrent DRM Peak Repetitive Forward Off State oltage TM Quadrant MainTerminal 2 + I DRM Peak Forward Blocking Current I RRM at RRM on state I H RRM I RRM TM Peak Repetitive Reverse Off State oltage Peak Reverse Blocking Current Maximum On State oltage Quadrant 3 I H TM off state + oltage I DRM at DRM I H Holding Current Quadrant Definitions for a Triac Quadrant II Quadrant I I Quadrant III Quadrant I All polarities are referenced to MT. With in phase signals (using standard AC lines) quadrants I and III are used.
5 Figure. RMS Current Derating Figure 2. On-State Power Dissipation TC, CASE TEMPERATURE (C ) α = 80 α = 20, 90, 60, 30 DC P A, AERAGE POWER (WATTS) α = DC I T(RMS) I T(RMS) Figure 3. On State Characteristics Figure. Thermal Response r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) t, TIME (ms) 00 Figure 5. Hold Current ariation 0 35 IH, HOLD CURRENT (ma) MT2 NEGATIE MT2 POSITIE 5 90 T J, JUNCTION TEMPERATURE ( C) 0
6 Figure 6. Gate Trigger Current ariation Figure 7. Gate Trigger oltage ariation Figure 8. Critical Rate of Rise of Off-State oltage (Exponential) Figure 9. Critical Rate of Rise of Commutatingoltage 0 (dv/dt), CRITICAL RATE OF RISE OF (/s µ ) c COMMUTATING OLTAGE T J = 25 C 0 C 75 C DRM t w f = 2 t w (di/dt) c = 6f I TM (di/dt) c, RATE OF CHANGE OF COMMUTATING CURRENT (A/ms) Figure. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt) L L N RMS ADJUST FOR I TM, 60 Hz AC MEASURE I CHARGE TRIGGER CHARGE CONTROL C L TRIGGER CONTROL N9 5 MT2 G MT
7 Dimensions Part Marking System SEATING PLANE B F T C S Q A MAC8xG AYWW H Z L G 2 3 N D K U R J 2 3 CASE 22A STYLE x= D, M, or N A= Assembly Location (Optional)* Y= Year WW = Work Week * The Assembly Location code (A) is optional. In cases where the Assembly Location is stamped on the package the assembly code may be blank. Dim Inches Millimeters Min Max Min Max A B C D F G H J K L N Q R S T U Z Pin Assignment Main Terminal 2 Main Terminal 2 3 Gate Main Terminal 2 Ordering Information Device Package Shipping MAC8DG MAC8MG MAC8NG TO-220AB (Pb-Free) 50 Units / Rail. DIMENSIONING AND TOLERANCING PER ANSI Y.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at:
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UNISONIC TECHNOLOGIES CO., LTD
MCR00 UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS 3 2 SOT-23 SOT-223 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
T x V 25 A Snubberless Triac. Description. Features. Applications. Benefits
1200 V 25 A Snubberless Triac Description Datasheet production data Its 1200 V blocking voltage enables use in 3-phase industrial application. Its noise immunity and dynamic commutation makes it suitable
T12M50T600B TRIACS 12 AMPERES RMS 600 VOLTS. Triacs Sillicon Bidirectional Thyristors TO-220AB FEATURES MECHANICAL DATA
LITE-ON SEMICONDUCTOR Triacs Sillicon Bidirectional Thyristors TRIACS 12 AMPERES RMS VOLTS FEATURES Blocking Voltage to Volts On-state Current Rating of 12 Amperes RMS at 9 Uniform Gate Trigger Currents
TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
TIP7G, TIP8G, TIP5G High oltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD SENSITIVE GATE SILICON CONTROLLED RECTIFIERS REVERSE BLOCKING THYRISTORS SOT-89 3 2 SOT-23 DEIPTION PNPN devices designed for high volume, line-powered consumer applications
MCR72-3, MCR72-6, MCR72-8. Sensitive Gate Silicon Controlled Rectifiers. Reverse Blocking Thyristors. SCRs 8 AMPERES RMS 100 thru 600 VOLTS
MCR72-3, MCR72-6, MCR72-8 Sensitive ate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for industrial and consumer applications such as temperature, light and speed control; process
NGB8207BN - 20 A, 365 V, N-Channel Ignition IGBT, D 2 PAK
NGB8207BN - 20 A, 365, N-Channel Ignition IGBT, D 2 PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over oltage clamped protection
ACST1635-8FP. Overvoltage protected AC switch. Description. Features. Applications
Overvoltage protected AC switch Description Datasheet production data Features OUT COM TO-220FPAB Enables equipment to meet IEC 61000-4-5 surge with overvoltage crowbar technology High noise immunity against
T12M5T-B SERIES TRIACS 12 AMPERES RMS 600 VOLTS. Sensitive Gate Triacs Sillicon Bidirectional Thyristors FEATURES TO-220AB MECHANICAL DATA
LITE-ON SEMICONDUCTOR Sensitive Gate Triacs Sillicon Bidirectional Thyristors TRIACS 2 AMPERES RMS 600 VOLTS FEATURES Sensitive Gate Allows Triggering by Microcontrollers and other Blocking Voltage to
MKP1V120 Series. Sidac High Voltage. Bidirectional Triggers 0.9 AMPERES RMS VOLTS
MKP112 Series Sidac High oltage Bidirectional Triggers Bidirectional devices designed for direct interface with the ac power line. Upon reaching the breakover voltage in each direction, the device switches
T1635T-8FP. 16 A Snubberless Triac. Features. Applications. Description
16 A Snubberless Triac G A A1 Features Datasheet production data Medium current Triac High static and dynamic commutation Three quadrants ECOPACK compliant component Complies with UL standards (File ref:
ACST6. Overvoltage protected AC switch. Applications. Description. Features. Benefits
Overvoltage protected AC switch Datasheet - production data OUT TO-220AB ACST610-8T OUT Features COM G OUT COM D²PAK ACST610-8G TO-220FPAB ACST610-8FP Figure 1. Functional diagram G G OUT COM OUT I²PAK
Features. Applications. This device is phase control : V DRM =600V. Marking Diagram SCT04N60D TO-252 SCT04N600. Triac TO-252. Rating.
Triac 600V, 4 STNDRD TRIC This device is suitable for low power C switching application, phase control application such as fan speed and temperature modulation control, lighting control and static switching
Thyristors 12 Amp Alternistor (High Communitation) Triacs
Qxx12xHx Series RoHS Description This 12 Amp bidirectional solid state switch series is designed for AC switching and phase control applications such as motor speed and temperature modulation controls,
MCR68 2. Silicon Controlled Rectifiers Reverse Blocking Thyristors. SCRs 12 AMPERES RMS 50 VOLTS
MCR682 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for overvoltage protection in crowbar circuits. Features lass-passivated Junctions for reater Parameter Stability and Reliability
T405Q A sensitivetriacs. Description. Features. Applications
4 A sensitivetriacs G A2 A1 Description Datasheet - production data Sensitive Triacs are intended in general purpose applications where high surge current capability is required. These Triacs feature a
MARKING DIAGRAMS MAXIMUM RATINGS
Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed for high volume, low cost, industrial and consumer applications such as motor control; process control; temperature, light
T Phase Control Thyristor
The T820 is a high current disc pack SCR employing a high di/dt gate structure. This gate design allows the SCR to be reliably operated at high di/dt and dv/dt conditions in various phase control applications.