STARPOWER MOSFET MD50FFC120C5S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

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1 STARPOWER SEMICONDUCTOR MOSFET MD50FFC120C5S 1200V/50A 6 in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed for the applications such as SMPS and DC drives. Features SiC power MOSFET Low R DS(on) Optimized intrinsic reverse diode Low inductance case avoid oscillations Kelvin source terminals for easy drive Isolated copper baseplate using DBC technology Typical Applications Main and auxiliary AC drives of electric vehicles DC servo and robot drives Battery vehicles Plasma cutting Equivalent Circuit Schematic 2015 STARPOWER Semiconductor Ltd. 9/19/2015 1/6 Preliminary

2 Absolute Maximum Ratings T C =25 o C unless otherwise noted MOSFET Symbol Description Value Unit V DSS Drain-Source Voltage 1200 V V GSS Gate-Source Voltage -10/+25 V I D Drain T C =25 o C T C =100 o C 50 A I DM Pulsed Drain Current 250 A P D Maximum Power T j =150 o C 297 W Diode Symbol Description Value Unit V RRM Repetitive Peak Reverse Voltage 1200 V I F Diode Continuous Forward Current 50 A I FM Diode Maximum Forward Current t p =1ms 250 A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 150 o C T jop Operating Junction Temperature -40 to +125 o C T STG Storage Temperature Range -40 to +125 o C V ISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V 2015 STARPOWER Semiconductor Ltd. 9/19/2015 2/6 Preliminary

3 MOSFET Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R DS(on) I D =50A,V GS =18V, Static Drain-Source T j =25 o C On-Resistance I D =50A,V GS =18V, T j =150 o 43.0 C mω V GS(th) Gate-Source Threshold Voltage I D =12.5mA,V DS =20V, V g fs Forward Transconductance V DS =20V,I D =50A, 23.6 S I DSS Drain-Source Leakage Current V DS =V DSS,V GS =0V, 0.1 ma I GSS Gate-Source Leakage Current V GS =V GSS,V DS =0V, 500 na R Gint Internal Gate Resistance 1.50 Ω C iss Input Capacitance 2.80 nf C oss Output Capacitance V GS =0V,V DS =800V, 0.39 nf C rss Reverse Transfer f=1.0mhz Capacitance 0.02 nf Q g Total Gate Charge 178 nc Q gs Gate-Source Charge I D =50A,V DS =800V, 35 nc Q gd Gate-Drain ("Miller") Charge V GS =-5/20V 32 nc t d(on) Turn-On Delay Time 15 ns t r Rise Time 31 ns t d(off) Turn-Off Delay Time 30 ns V DS =800V,I D =50A, t f Fall Time 27 ns R G =2.5Ω,V GS =-5/20V, Turn-On Switching E T j =25 o on C 1.4 mj Loss E off Turn-Off Switching Loss 0.3 mj Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Forward I V F =50A,V GE =0V, F V Voltage I F =50A,V GE =0V,T j =150 o C STARPOWER Semiconductor Ltd. 9/19/2015 3/6 Preliminary

4 Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit Junction-to-Case(per MOSFET) R thjc K/W Junction-to-Case(per Diode) R thch Case-to-Heatsink (per Module) K/W M Mounting Torque, Screw M N.m G Weight of Module 200 g 2015 STARPOWER Semiconductor Ltd. 9/19/2015 4/6 Preliminary

5 Circuit Schematic 25,26 15, , , , , ,14 Package Dimensions Dimensions in Millimeters STARPOWER Semiconductor Ltd. 9/19/2015 5/6 Preliminary

6 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STARPOWER Semiconductor Ltd. 9/19/2015 6/6 Preliminary

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