STARPOWER MOSFET MD25CUR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR
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1 STARPOWER SEMICONDUCTOR MOSFET MD25CUR120D6S 1200V/25A chopper in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed for the applications such SMPS and solar power. Features SiC power MOSFET Low R DS(on) Optimized intrinsic reverse diode Avalanche ruggedness Low inductance case AlN substrate for low thermal resistance Isolated copper baseplate using DBC technology Typical Applications Electric vehicle Solar Power Switching mode power supply Equivalent Circuit Schematic 2017 STARPOWER Semiconductor Ltd. 4/18/2017 1/6 Preliminary
2 Absolute Maximum Ratings T C =25 o C unless otherwise noted MOSFET V DSS Drain-Source Voltage 1200 V V GSS Gate-Source Voltage -4/+22 V I D Drain Current 25 A I DM Pulsed Drain Current 77 A P D Maximum Power T j =175 o C 111 W Body Diode I S Source Current 25 A I SM Pulsed Source Current 77 A Diode V RRM Repetitive Peak Reverse Voltage 1200 V I F Diode Continuous Forward Current 25 A I FM Diode Maximum Forward Current t p =1ms 77 A Module T jmax Maximum Junction Temperature 175 o C T jop Operating Junction Temperature -40 to +150 o C T STG Storage Temperature Range -40 to +125 o C V ISO Isolation Voltage RMS,f=50Hz,t=1min 4000 V 2017 STARPOWER Semiconductor Ltd. 4/18/2017 2/6 Preliminary
3 MOSFET Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R DS(on) I D =10A,V GS =18V, Static Drain-Source T j =25 o C On-Resistance I D =10A,V GS =18V, T j =125 o 120 C mω V GS(th) Gate-Source Threshold Voltage I D =5.0mA,V DS =10V, V g fs Forward Transconductance V DS =10V,I D =10A, 4.4 S I DSS Drain-Source Leakage Current V DS =V DSS,V GS =0V, 10 μa I GSS Gate-Source Leakage Current V GS =V GSS,V DS =0V, 100 na R Gint Internal Gate Resistance 12.0 Ω C iss Input Capacitance 785 pf C oss Output Capacitance V GS =0V,V DS =800V, 75 pf C rss Reverse Transfer f=1.0mhz Capacitance 35 pf Q g Total Gate Charge 60 nc Q gs Gate-Source Charge I D =10A,V DS =600V, 15 nc Q gd Gate-Drain ("Miller") Charge V GS =18V 25 nc t d(on) Turn-On Delay Time 15 ns V DS =400V,I D =10A, t r Rise Time 22 ns R G =0Ω,V GS =18V, t d(off) Turn-Off Delay Time T j =25 o 29 ns C t f Fall Time 24 ns Body Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Forward Voltage I S =10A,V GS =0V, V Diode Reverse 17 ns Recovery Time V R =600V,I S =10A, Diode Reverse di/dt=1100a/μs,v GS =0V, 50 nc Recovery Charge Peak Reverse 6.0 A Recovery Current V SD t rr Q r I RM 2017 STARPOWER Semiconductor Ltd. 4/18/2017 3/6 Preliminary
4 Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Forward Voltage I S =20A,V GS =0V, V Peak Reverse Recovery Current V R =1200V,V GS =0V, 20 μa V SD I RM Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit R thjc Junction-to-Case (per MOSFET) Junction-to-Case (per Diode) K/W R thch Case-to-Heatsink (per MOSFET) Case-to-Heatsink (per Diode) Case-to-Heatsink (per module) K/W M Terminal Connection Torque, Screw M Mounting Torque, Screw M N.m G Weight of Module 35 g 2017 STARPOWER Semiconductor Ltd. 4/18/2017 4/6 Preliminary
5 Circuit Schematic Package Dimensions Dimensions in Millimeters 2017 STARPOWER Semiconductor Ltd. 4/18/2017 5/6 Preliminary
6 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STARPOWER Semiconductor Ltd. 4/18/2017 6/6 Preliminary
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N-Channel Enhancement Mode Power MOSFET General Description The YMP200N08 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
More informationACE2305B. P-Channel Enhancement Mode Field Effect Transistor. Description
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
More informationN-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET TO-262 TO Gate 2. Drain 3. Source
N-channel Enhancement mode TO-262/TO-263/TO-220F MOSFET Features High ruggedness Low R DS(ON) (Typ 0.23Ω)@V GS =10V Low Gate Charge (Typ 42nC) Improved dv/dt Capability 100% Avalanche Tested Application:
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationAO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
More information700V Super-Junction Power MOSFET
700V Super-Junction Power MOSFET FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationSMN01L20Q Logic Level N-Ch Power MOSFET
Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features 0.85A, 200V, R DS(on) =1.35Ω @ V GS =10V Low gate charge: Q g =4nC (Typ.) Fast switching 100% avalanche tested RoHS compliant device D
More informationMDF9N50 N-Channel MOSFET 500V, 9.0 A, 0.85Ω
General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationPE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.
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