Rectifier with Chopper
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1 STARPOWER SEMICONDUCTOR TM Rectifier with Chopper RD100PBH160C5S Preliminary Molding Type Module 1600V/100A General Description STARPOWER Rectifier Diode Power Module provides ultra low conduction loss.they are designed for the applications such as inverters. Features Planar Passivated Chips High Surge Capacity Dual Diodes Cascaded Circuit Isolated Copper Baseplate Using DBC Technology Typical Applications Input Bridge Rectifier For Inverter AC/DC Motor Control Power Supply 2010 STARPOWER Semiconductor Ltd. 6/15/2010 1/6 Preliminary
2 DIODE-rectifier T C =25 unless otherwise noted Maximum Rated Values Symbol Description RD100PBH160C5S Units V RRM Collector-Emitter T j = V I F RMSM I RMSM I FSM I 2 t RMS Forward Current Maximum Per T C =80 78 A Maximum RMS Current at Rectifier T C = A Surge Forward Current V R =0V, t p =10ms,T j = T j = A I 2 t-value,v R =0V, t p =10ms, T j = T j = A 2 s Characteristics Values V F Diode Forward I F =100A,T j = V Voltage I R Reverse Current T j =150,V R =1600V 2.0 ma IGBT-brake-chopper T C =25 unless otherwise noted Maximum Rated Values Symbol Description RD100PBH160C5S Units V CES Collector-Emitter T j = V V GES Gate-Emitter Voltage ±20 V I C Collector T C =80 50 A I CM Pulsed Collector Current t p =1ms 100 A P tot Total Power T j = W Off Characteristics V (BR)CES I CES I GES Collector-Emitter T j = V Breakdown Voltage V CE =V CES,V GE =0V, Collector Cut-Off Current 5.0 ma T j =25 Gate-Emitter Leakage V GE =V GES,V CE =0V, 400 na Current T j = STARPOWER Semiconductor Ltd. 6/15/2010 2/6 Preliminary
3 On Characteristics V GE(th) V CE(sat) C ies Gate-Emitter Threshold I C =2.0mA,V CE =V GE, V Voltage T j =25 I C =50A,V GE =15V, Collector to Emitter T j =25 V Saturation Voltage I C =50A,V GE =15V, 2.10 T j =125 Input Capacitance 4.29 pf C oes Output Capacitance V CE =25V,f=1Mhz, 0.30 pf C res Reverse Transfer V GE =0V 0.20 pf Capacitance DIODE-brake-chopper T C =25 unless otherwise noted Maximum Rated Values Symbol Description RD100PBH160C5S Units V RRM Collector-Emitter T j = V I F DC Forward T C =80 50 A I FRM Repetitive Peak Forward Current t p =1ms 100 A Characteristics Values V F Q r I RM E rec Diode Forward T j = I F =50A,V GE =0V Voltage T j = V Recovered Charge T j = I F =50A, T j = μc Peak Reverse V R =600V, T j =25 34 Recovery Current di/dt=-830a/μs, T j = A Reverse Recovery V GE =-15V T j = Energy T j = mj 2010 STARPOWER Semiconductor Ltd. 6/15/2010 3/6 Preliminary
4 Module Symbol Parameter Min. Typ. Max. Units V ISO Isolation Voltage RMS,f=50Hz,t=1min 2500 V R θjc Junction-to-Case (per DIODE-rectifier) Junction-to-Case (per IGBT-brake-chopper) K/W Junction-to-Case (per DIODE-brake-chopper) R θcs Case-to-Sink (Conductive grease applied) 0.02 K/W T j Junction Temperature T STG Storage Temperature Range Mounting Torque Mounting Screw:M N.m G Weight of Module 200 g 2010 STARPOWER Semiconductor Ltd. 6/15/2010 4/6 Preliminary
5 Equivalent Circuit Schematic Package Dimension Dimensions in Millimeters 2010 STARPOWER Semiconductor Ltd. 6/15/2010 5/6 Preliminary
6 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STARPOWER Semiconductor Ltd. 6/15/2010 6/6 Preliminary
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