STARPOWER MOSFET MD50SGR120D6S. General Description. Features. Typical Applications. Equivalent Circuit Schematic SEMICONDUCTOR

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1 STARPOWER SEMICONDUCTOR MOSFET MD50SGR120D6S 1200V/50A 1 in one-package General Description STARPOWER MOSFET Power Module provides very low R DS(on) as well as optimized intrinsic diode. It s designed for the applications such SMPS and solar power. Features SiC power MOSFET Low R DS(on) Optimized intrinsic reverse diode Low inductance case AlN substrate for low thermal resistance Isolated copper baseplate using DBC technology Typical Applications Electric vehicle Solar Power Switching mode power supply Equivalent Circuit Schematic 2018 STARPOWER Semiconductor Ltd. 10/19/2018 1/6 Preliminary

2 Absolute Maximum Ratings T C =25 o C unless otherwise noted MOSFET Symbol Description Value Unit V DSS Drain-Source Voltage 1200 V V GSS Gate-Source Voltage -4/+22 V I D Drain T C =25 o C T C =100 o C 50 A I DM Pulsed Drain Current 274 A P D Maximum Power T j =175 o C 416 W Body Diode Symbol Description Value Unit I S Source Current 50 A I SM Pulsed Source Current 274 A Module Symbol Description Value Unit T jmax Maximum Junction Temperature 175 o C T jop Operating Junction Temperature -40 to +150 o C T STG Storage Temperature Range -40 to +150 o C V ISO Isolation Voltage RMS,f=50Hz,t=1min 4000 V 2018 STARPOWER Semiconductor Ltd. 10/19/2018 2/6 Preliminary

3 MOSFET Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit R DS(on) I D =40A,V GS =18V, Static Drain-Source T j =25 o C On-Resistance I D =40A,V GS =20V, T j =125 o 30.0 C mω V GS(th) Gate-Source Threshold Voltage I D =20.0mA,V DS =10V, V g fs Forward Transconductance V DS =10V,I D =40A, 16.6 S I DSS Drain-Source Leakage Current V DS =V DSS,V GS =0V, 20 μa I GSS Gate-Source Leakage Current V GS =V GSS,V DS =0V, 200 μa R Gint Internal Gate Resistance 3.5 Ω C iss Input Capacitance 2674 pf C oss Output Capacitance V GS =0V,V DS =800V, 152 pf C rss Reverse Transfer f=1.0mhz Capacitance 54 pf Q g Total Gate Charge 214 nc Q gs Gate-Source Charge I D =40A,V DS =600V, 44 nc Q gd Gate-Drain ("Miller") Charge V GS =18V 82 nc t d(on) Turn-On Delay Time 21 ns V DS =400V,I D =36A, t r Rise Time 39 ns R G =0Ω,V GS =0/18V, t d(off) Turn-Off Delay Time T j =25 o 49 ns C t f Fall Time 24 ns E on Turn-On Switching Loss V DS =600V,I D =40A, 0.56 mj E off Turn-Off Switching Loss R G =0Ω,V GS =0/18V 0.24 mj Body Diode Characteristics T C =25 o C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit Diode Forward Voltage I S =40A,V GS =0V, V Diode Reverse 25 ns Recovery Time V R =600V,I S =40A, Diode Reverse di/dt=2200a/μs,v GS =0V, 230 nc Recovery Charge Peak Reverse 18.0 A Recovery Current V SD t rr Q r I RM 2018 STARPOWER Semiconductor Ltd. 10/19/2018 3/6 Preliminary

4 Module Characteristics T C =25 o C unless otherwise noted Symbol Parameter Min. Typ. Max. Unit R thjc Junction-to-Case (per MOSFET) K/W R thch Case-to-Heatsink (per Module) 0.15 K/W M Terminal Connection Torque, Screw M Mounting Torque, Screw M N.m G Weight of Module 35 g 2018 STARPOWER Semiconductor Ltd. 10/19/2018 4/6 Preliminary

5 Circuit Schematic 3 2 1,4 Package Dimensions Dimensions in Millimeters 2018 STARPOWER Semiconductor Ltd. 10/19/2018 5/6 Preliminary

6 Terms and Conditions of Usage The data contained in this product datasheet is exclusively intended for technically trained staff. you and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. This product data sheet is describing the characteristics of this product for which a warranty is granted. Any such warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its characteristics. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of our product, please contact the sales office, which is responsible for you (see For those that are specifically interested we may provide application notes. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the Product in aviation applications, in health or live endangering or life support applications, please notify. If and to the extent necessary, please forward equivalent notices to your customers. Changes of this product data sheet are reserved STARPOWER Semiconductor Ltd. 10/19/2018 6/6 Preliminary