MTI 120W55GA / MTI 120W55GC

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1 GWM 16-55X1 Three phase full Bridge with Trench MOSFETs in DCB isolated high current package S = 55 V 25 = 15 R DSon typ. = 2.7 mw L+ G1 G3 G5 S1 G2 S3 G4 S5 G6 L1 L2 L3 Straight leads Surface Mount Device S2 S4 S6 L- MOSFETs Symbol Conditio Maximum Ratings S = 25 C to 15 C 55 V ± 2 V 25 9 T C = 25 C T C = 9 C I F25 I F9 Symbol Conditio Characteristic Values ( = 25 C, unless otherwise specified) min. typ. max. R DSon on chip level at = 25 C mw = 1 V ; = mw (th) = 2 V; = 1 m V SS = S ; = V = 25 C 1 µ.1 m I GSS = ± 2 V; = V.2 µ Q g Q gs Q gd E recoff T C = 25 C (diode) T C = 9 C (diode) = 1 V; = 12 V; = 16 inductive load = 1 V; = 1 ; R G = 39 Ω; 15 tbd tbd R thjc R thjh with heat trafer paste (IXYS test setup) 1.3 = (R DS(on) + 2R Pin to Chip ) nc nc nc mj mj mj K/W K/W pplicatio C drives in automobiles - electric power steering - starter generator in industrial vehicles - propulsion drives - fork lift drives in battery supplied equipment Features MOSFETs in trench technology: - low RDSon - optimized intriic reverse diode package: - high level of integration - high current capability 3 max. - aux. terminals for MOSFET control - terminals for soldering or welding connectio - isolated DCB ceramic base plate with optimized heat trafer Space and weight savings Package optio 2 lead forms available - straight leads (SL) - SMD lead version (SMD) Recommended replacements: MTI 12W55G / MTI 12W55GC 21137i 211 IXYS ll rights reserved 1-6

2 GWM 16-55X1 Source-Drain Diode Symbol Conditio Characteristic Values ( = 25 C, unless otherwise specified) min. typ. max. V SD (diode) I F = 1 ; = V V r Q RM I RM I F = 1 ; -di F /dt = 8 /µs; V R µc Component Symbol Conditio Maximum Ratings I RMS per pin in main current paths (P+, N-, L1, L2, L3) may be additionally limited by external connectio 3 T stg V ISOL I ISOL < 1 m, 5/6 Hz, f = 1 minute 1 V~ F C mounting force with clip 5-25 N Symbol Conditio Characteristic Values min. typ. max. R pin to chip.6 mw C P coupling capacity between shorted 16 pf pi and mounting tab in the case Weight 25 g = (R DS(on) + 2R Pin to Chip ) C C 21137i 211 IXYS ll rights reserved 2-6

3 GWM 16-55X1 Straight Leads GWM 16-55X1-SL 1,5 37,5 +,2 (11x) 3 ±,5 1 ±,5 5 ±,5 1 ±,5,5 ±,2 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 25 +,2 53 ±,15 L3 L2 L1 L- L+ 4,5 2,1 12 ±,5 4 ±,5 (3x) 6 ±,5 Surface Mount Device GWM 16-55X1-SMD 37,5 +,2 L3p h 1,5 (11x) 3 ±,5 1 ±,5 S6 G6 S5 G5 S4 G4 S3 G3 S2 G2 S1 G1 39 ±,15 5 ±,5,5 ±,2 R1 ±,2 a s e - o u t 25 +,2 L2 L1 L- L+ 4,5 2,1 12 ±,5 1 ±,5 5 ±,1 4 ±,5 (3x) 6 ±,5 5 ±2 Leads Ordering Part Name & Packing Unit Marking Part Marking Delivering Mode Base Qty. Ordering Code Straight Standard GWM 16-55X1 - SL GWM 16-55X1 Blister SMD Standard GWM 16-55X1 - SMD GWM 16-55X1 Blister i 211 IXYS ll rights reserved 3-6

4 GWM 16-55X1 S [V] normalized R DS(on) normalized [ C] Fig. 1 Drain source breakdown voltage S vs. junction temperature [V] Fig. 3 Typical output characteristic = 2 V 15 V SS =.25 m = 1 V = 16 R DS(on) 1 V 7 V = 25 C R DS(on) normalized 6.5 V 5.5 V [ C] Fig. 5 Drain source on-state resistance R DS(on) versus junction temperature 6 V 5 V RDS(on) [mω] [V] Fig. 4 Typical output characteristic 21137i 211 IXYS ll rights reserved [] R DS(ON) - normalized [V] = 2 V 15 V = 25 C Fig. 2 Typical trafer characteristic 1 V 5 V 5.5 V 6 V 6.5 V 7 V 7 V 6.5 V 6 V 5.5 V 5 V = 1 V V 2 V Fig. 6 Drain source on-state resistance R DS(on) versus

5 GWM 16-55X1 [V] = 16 = 25 C = 12 V = 4 V Q G [nc] - [] = 175 C T C [ C], E rec(off), E rec(off) Fig.7 Gate charge characteristic = +1/ V R G = 39 Ω = +1/ V = 16 E rec(off) x R G [Ω] Fig. 9 Typ. turn-on energy & switching times vs. collector current, inductive switching E rec(off) x t [] t [] = +1/ V = +1/ V R G = 39 Ω Fig. 8 Drain current vs. case temperature T C R G [Ω] Fig. 1 Typ. turn-off energy & switching times vs. collector current, inductive switching = t [] t [] Fig. 11 Typ. turn-on energy & switching times vs. gate resistor, inductive switching Fig. 12 Typ. turn-off energy & switching times vs. gate resistor, inductive switching 21137i 211 IXYS ll rights reserved 5-6

6 GWM 16-55X1 r [] I F = di F /dt [/µs] V R I RM [] I F = di F /dt [/µs] V R Q rr [µc] Fig. 13 Reverse recovery time r of the body diode vs. di/dt 16 1 I F = 5 -di F /dt [/µs] Fig. 15 Reverse recovery charge Q rr of the body diode vs. di/dt.1.1 V R I F [] Thermal Respoe [K/W] Fig. 14 Reverse recovery current I RM of the body diode vs. di/dt = V = -25 C 25 C 125 C 15 C t.1 t V SD [V] Fig. 16 Source drain diode current I F vs. source drain voltage V SD (body diode) GWM 16-55X t [ms] Fig. 17 Definition of switching times Fig. 18 Typ. thermal impedance junction to heatsink Z thjh with heat trafer paste 21137i 211 IXYS ll rights reserved 6-6

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