A I GT. BTA40-BTA41 Series Specially Varieties 3Q-Triacs TG-C TG40C60 TG40C80 RD-91 TOP3. 3Q-TRIACs. Product Model Reference & Naming

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1 40 Specially Varieties 3Q-Triacs DESCRIPTION High current density due to double mesa technology; SIPOS and Glass Passivation. BT40, BT41, TG40C Series triacs is suitable for general purpose C switching. DB3 They can be used as an ON/OFF Function in applications such as static relays, heating regulation, induction motor stating circuits... or for phase contol operation light dimmers, motor speed controllers. / BT40-BW, BT41-BW Series are 3 Quadrants Triacs, Ther are specially recommended for use on inductive loads. BT40, BT41, TG40C are isolated internally, they provides a 2500V RMS - isolation voltage from all three terminals to extemal heetsink., RD-91 and TG-C Insulated Package : RD-91TG-C Product Model Reference & Naming 3-Quadrants TRICs V 800V 1000V 1200V 1600V -- TG-C TG40C60 TG40C80 TG40C100 TG40C120 TG40C160 BW50m RD-91 BT40-600BW BT40-800BW BT BW BT BW BT BW BW50m BT41-600BW BT41-800BW BT BW BT BW BT BW BW50m H BT B W HOHI ELECTRONICS CO.,LTD. BT: Bi-directional Triode BT: : Insulated B: Non Insulated 40=40 (RD-91) 41=40 () 40C=40 (TG-C) 600=600V 700=700V 800=800V 1000=1000V 1200=1200V 1400=1400V 1600=1600V 1800=1800V I GT -- T5m S10m C35m B50m 3Q-TRICs PINNING: Insulated Package RD-91TG-C Pin Symbol T1 T2 G Tab Description - Pin Polarity Circuit Diagram TG-C T2 (2) RD-91 T1 (1) G (3) 16

2 40 BSOLUTE MXIMUM RTINGs SYMBOL Signification in Symbol Test Conditions Value Unit I T(RMS) RMS On-state Current (full sine wave) RD-91, TG-C T C =80 T C =90 40 I TSM Non Repetitive Surge Peak on-state Current (full cycle, T j =25) f=60hz, t=16.7ms f=50hz, t=20ms I GM Peak Gate Current tp=20μst j =125 4 I 2 t I 2 t Value for Fusing Consideration tp=10ms, T j = ses di/dt Critical rate of rise of on-state current I G =2 I GT, tr100ns, f=120hz, T j = /μs V DRM Repetitive peak off-state Voltages T J =25 V RRM Repetitive peak Reverse Voltages T J=25 V DSM Non Repetitive Surge peak off-state Voltages tp=10ms, T j =25 600~1600 V DRM +100 V V RSM Non Repetitive peak Reverse Voltages tp=10ms, T j =25 V RRM +100 P G(V) P GM verage gate power dissipation Peak gate power T j =25 tp=20μs, T j = W T j T stg Operating Junction Temperature Range Storage Junction Temperature Range -40 ~ ~ +150 R th(j-c) Junction to Case (C) : ISOLTION LIMITING VLUE & CHRCTERISTIC (Ths=25 unless otherwise specified) 0.9 RD-91, TG-C 0.8 /W STTIC CHRCTERISTICS SYMBOL Paramenter & Test Conditions Quadrant BT40, BT41, TG-C BW B Unit I GT V D =12V, R L = I H I L I T =100m I G =1.2 I GT LL m dv/dt V D =67%V DRM gate open T j = V/μs (di/dt)c Without snubber T j = /ms V GT V D =12V, R L =30 LL 1.3 V GD V D =V DRM, R L =3.3K, T j =125 LL 0.2 V V TM I TM =60, tp=380μs T j = I DRM V D =V DRM, V R =V RRM T j =25 10 μ I RRM V D =V DRM, V R =V RRM T j =125 5 m 26

3 40 Electrical characteristics & Typical characteristics( 电气特性与典型特征 ) BT40 BT41 36

4 40 PCKGE MECHNICL DT mm & inch REF Millimeters Dimensions Inches B C D E F G H J K Insulated Package L P R H XXXXXXXX KKG aabb H: XXXXXXXXXX: KKG: aa: bb: (01~53) Marking H: HOHI ELECTRONICS XXXXXXXXXX: Part Number KKG: Registered trademark aa: Factory Year bb: Factory natural Week bb: (01~53) : Packaging Specifications Plastic tube 30Pcs/Tub 450cs/BOX 3600Pcs/Cartons 46

5 40 RD-91 PCKGE MECHNICL DT mm & inch RD-91 Dimensions REF Millimeters Inches L2 2 L1 B2 B1 C C2 C1 1 N2 N1 B F E3 I RD-91 Insulated Plastic Package B B B C C C E F I L L N1 N TG-C PCKGE MECHNICL DT mm & inch TG-C Dimensions REF Millimeters Inches TG-C Insulated Plastic Package B C D E F T1, T T T` t1, t t G H H H h h h I J

6 40 Manufacturers version information KKG Product Data KKG Product Data KKG Product Data-3.1 KKG WRN, Letters, patterns, are officially registered my trademark counterfeiting, theft are all violations, violators will be held liable! SHENZHEN 2 floor(whole floor), BOXIN Building. 0 Lane on the 8th. Yufeng Garden. 82 District. BON District, Shenzhen City, Guangdong Province, China. TEL: TEL: FX: : 66

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